Er Pan | arXiv Science

arXiv2026

Resonant-enhanced tunneling electroresistance in sliding ferroelectric tunnel junctions

The escalating demand for memory scaling requires switching mechanisms that remain reliable at atomic thickness while operating with minimal energy consumption. Sliding ferroelectricity provides a promising platform for this challenge: the spontaneous interfacial polarization emerging at superlubric, atomically thin van der Waals interfaces endows exceptional fatigue resistance, ultrafast switching and ultralow coercive fields. Nevertheless, the intrinsically weak polarization of sliding ferroelectrics limits the available signal window, necessitating new physical mechanisms that can transduce subtle polarization variations into pronounced resistance contrasts. Here, we address this challenge by introducing momentum-conserving resonant tunneling between lattice-aligned graphene electrodes. The resulting resonant sliding ferroelectric tunnel junction achieves a tunneling electroresistance (TER) ratio of up to 225.65%, substantially exceeding that of conventional sliding ferroelectric tunnel junctions. In addition, the device delivers a tunable TER ratio, multistate programmability, high current density, robust endurance with a small coefficient of variation (<0.69%), fast switching (20 ns), low switching energy (310 fJ), and low read voltage (<0.2 V). Collectively, these results establish a unique role for sliding ferroelectricity in bridging the gap of memory technology between performance and miniaturization, and open a new pathway toward next-generation nonvolatile memory technologies.

cond-mat.mes-hall↗

arXiv2022

Sliding induced multiple polarization states in two-dimensional ferroelectrics

When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structures spontaneous polarization. This phenomenon is known as sliding ferroelectricity and it is markedly different from conventional ferroelectric switching mechanisms relying on ion displacement. Here, we present layer dependence as a new dimension to control sliding ferroelectricity. By fabricating 3R MoS2 of various thicknesses into dual-gate field-effect transistors, we obtain anomalous intermediate polarization states in multilayer 3R MoS2. Using results from ab initio density functional theory calculations, we propose a generalized model to describe the ferroelectric switching process in multilayer 3R MoS2 and to explain the formation of these intermediate polarization states. This work reveals the critical roles that layer number and interlayer dipole coupling play in sliding ferroelectricity and presents a new strategy for the design of novel sliding ferroelectric devices.

cond-mat.mtrl-sci↗