arXiv subjects

Emmanuel Defay

Publications and source records attributed to Emmanuel Defay.

13 recordsLinked to original sources

arXiv2025

Sub-micron Cu(In,Ga)Se2 solar cell with efficiency of 18.2% enabled by a hole transport layer

Reducing the thickness of Cu(In,Ga)Se2 solar cells is a key objective in order to reduce production cost and to improve sustainability. The major challenge for sub-micron Cu(In,Ga)Se2 cells is the recombination at the backside. In standard Cu(In,Ga)Se2 backside recombination is suppressed by a bandgap gradient, acting as a back surface field. This gradient is difficult to maintain in sub-micron thick absorbers. In this study, a hole transport layer passivates the back contact and enables efficient sub-micron Cu(In,Ga)Se2 solar cells without the need of a Ga gradient. The backside passivation by the hole transport layer is as effective as an optimized Ga gradient, resulting in a significant increase in open-circuit voltage by 80 mV in comparison to the reference sample without passivation. Moreover, the hole transport layer exhibits good transport properties, leading to a fill factor as high as 77%. Photoluminescence quantum yield of 0.15% and solar cell efficiency above 18% are demonstrated in sub-micron Cu(In,Ga)Se2 absorbers.

cond-mat.mtrl-sci↗

arXiv2025

Solution-Based Fabrication of High-Performance K$_{0.5}$Na$_{0.5}$NbO$_3$ Thin Films for Surface Haptics

K$_{0.5}$Na$_{0.5}$NbO$_3$ is among the most promising lead-free piezoelectrics. While its sputtered films match the performance of the champion piezoelectric Pb(Zr,Ti)O$_3$, reproducible processing of high-quality and time-stable solution-processed K$_{0.5}$Na$_{0.5}$NbO$_3$ films remains challenging. Here, we report 1 $\mu$m-thick Mn-doped K$_{0.5}$Na$_{0.5}$NbO$_3$ films prepared through a chemical solution deposition process, which have perfectly dense microstructure and uniform composition across their thickness. The films exhibit a high transverse piezoelectric coefficient ($e_{31,f} = -15.4$ C/m$^2$), high dielectric permittivity ($\varepsilon_r \approx 920$), low dielectric losses ($\tan\delta = 0.05$) and can withstand electric fields up to at least 1 MV/cm. The functional properties show excellent stability over time, and the synthesis process is reproducible. Furthermore, a surface acoustic haptic device is demonstrated by using K$_{0.5}$Na$_{0.5}$NbO$_3$ thin-film actuators. The results demonstrate the high potential of Mn-doped K$_{0.5}$Na$_{0.5}$NbO$_3$ films to become a replacement for lead-based Pb(Zr,Ti)O$_3$ films in piezoelectric applications.

cond-mat.mtrl-sci↗

arXiv2025

Tunable electrocaloric effect in lead scandium tantalate through calcium doping

State-of-the-art electrocaloric cooling prototypes rely on the conventional electrocaloric effect of ferroelectric lead scandium tantalate (PbSc0.5Ta0.5O3, PST), which peaks near room temperature. Here, we demonstrate that A-site calcium doping in highly ordered PST modifies its phase transitions and enables precise tuning of the electrocaloric response. The transition temperature shifts down to 258 K and up to 319 K, depending on Ca concentration. Calorimetry under electric field, electrical polarization loops, and piezoresponse force microscopy reveal the emergence of an intermediate antiferroelectric phase stabilized for Ca $\geq$ 2\%. These results are supported by first-principles calculations. We observe a conventional electrocaloric effect for Ca $\leq$ 2\% and an inverse electrocaloric effect at higher doping ($\geq$ 2\%). Under an applied field of 110 kV cm$^{-1}$, Ca-doped PST exhibits an adiabatic temperature change of 2 K over a range from 263 K to 353 K. Such Ca-doped PST compounds could be used to expand the temperature range of PST below the freezing point of water. Our results offer a pathway to cascaded electrocaloric cooling devices with extended operating spans.

cond-mat.mtrl-sci↗

arXiv2024

Ferroelectric HfO$_2$-ZrO$_2$ multilayers with reduced wake-up

Since the discovery of ferroelectricity in HfO$_2$ thin films, significant research has focused on Zr-doped HfO$_2$ and solid solution (Hf,Zr)O$_2$ thin films. Functional properties can be further tuned via multilayering, however, this approach has not yet been fully explored in HfO$_2$-ZrO$_2$ films. This work demonstrates ferroelectricity in a 50 nm thick, solution-processed HfO$_2$-ZrO$_2$ multilayer film, marking it as the thickest multilayer film to date exhibiting ferroelectric properties. The multilayer structure was confirmed through transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy, with high-resolution TEM revealing grain continuity across multiple layers. This finding indicates that a polar phase in the originally paraelectric ZrO$_2$ layer, can be stabilized by the HfO$_2$ layer. The film attains a remanent polarization of 9 uC/cm$^2$ and exhibits accelerated wake-up behavior, attributed to its higher breakdown strength resulting from the incorporation of multiple interfaces. These results offer a faster wake-up mechanism for thick ferroelectric hafnia films.

cond-mat.mtrl-sci↗

arXiv2024

Highly Transparent Lead-Free Piezoelectric Haptic Device

Acoustic haptic technology adds touch sensations to human-machine interfaces by integrating piezoelectric actuators onto touchscreens. Traditional piezoelectric haptic technologies use opaque lead-containing ceramics that are both toxic and visible. We have developed a highly transparent lead-free piezoelectric haptic device using potassium sodium niobate (KNN) and transparent conductive oxide thin films. The KNN film, grown on glass, exhibits a pure perovskite phase and a dense microstructure. This device achieves up to 80% transmittance, surpassing lead zirconate titanate (PZT) thin films. It generates an acoustic resonance at 16.5 kHz and produces a peak-to-peak displacement of 1.0 um at 28 V unipolar, making it suitable for surface rendering applications. This demonstrates the potential of transparent lead-free piezoelectric actuators as an effective alternative to conventional PZT haptic actuators.

cond-mat.mtrl-sci↗

arXiv2023

Crystallization of piezoceramic films on glass via flash lamp annealing

Integration of thin-film oxide piezoelectrics on glass is imperative for the next generation of transparent electronics to attain sensing and actuating functions. However, their crystallization temperature (above 650 {\deg}C) is incompatible with most glasses. We developed a flash lamp process for growth of piezoelectric lead zirconate titanate films. The process enables crystallization on various types of glasses in a few seconds only. Functional properties of these films are comparable to the films processed with standard rapid thermal annealing at 700 {\deg}C. A surface haptic device was fabricated with a 1 $\unicode{x00B5}$m-thick film (piezoelectric e$_{33,f}$ of -5 C m$^{-2}$). Its ultrasonic surface deflection reached 1.5 $\unicode{x00B5}$m at 60 V, sufficient for its use in surface rendering applications. This flash lamp annealing process is compatible with large glass sheets and roll-to-roll processing and has the potential to significantly expand the applications of piezoelectric devices on glass.

physics.app-ph↗

arXiv2023

Direct electrocaloric characterization of ceramic films

Reliable and accurate characterization of the electrocaloric effect is necessary to understand the intrinsic properties of materials. To date, several methods have been developed to directly measure the electrocaloric effect. However, each of them has some limitations, making them less suitable for characterizing ceramic films, which rely almost exclusively on less accurate indirect methods. Here, a new approach is proposed to address the process of rapid heat dissipation in ceramic films and to detect the electrically induced temperature change before it thermally bonds with the surrounding elements. By using a polymer substrate that slows heat dissipation to the substrate and fast infrared imaging, a substantial part of the adiabatic electrocaloric effect in Pb(Mg1/3Nb2/3)O3-based ceramic films is captured. Infrared imaging provides a robust technique to reduce the ratio between the adiabatic and the measured electrocaloric temperature change in micrometer-sized ceramic films to a single-digit number, ~3.5. The obtained results are validated with another direct thermometric method and compared with the results obtained with an indirect approach. Despite different measurement principles, the results obtained with the two direct methods agree well. The proposed approach is timely and could open a door to verify the predicted giant electrocaloric effects in ceramic films, thus accelerating the process of their integration into functional devices.

physics.app-ph↗

arXiv2022

Birefringence induced by antiferroelectric switching in transparent polycrystalline $PbZr_{0.95}Ti_{0.05}O_{3}$ film

The most characteristic functional property of antiferroelectric materials is the possibility to induce a phase transition from a non-polar to a polar phase by an electric field. Here, we investigate the effect of this field-induced phase transition on the birefringence change of $PbZr_{0.95}Ti_{0.05}O_{3}$. We use a transparent polycrystalline $PbZr_{0.95}Ti_{0.05}O_{3}$ film grown on $PbTiO_{3}/HfO_{2}/SiO_{2}$ with interdigitated electrodes to directly investigate changes in birefringence in a simple transmission geometry. In spite of the polycrystalline nature of the film and its moderate thickness, the field-induced transition produces a sizeable effect observable under a polarized microscope. The film in its polar phase is found to behave like a homogeneous birefringent medium. The time evolution of this field-induced birefringence provides information about irreversibilities in the antiferroelectric switching process and its slow dynamics. The change in birefringence has two main contributions, one that responds briskly (~ 0.5 s), and a slower one that rises and saturates over a period of as long as 30 minutes. Possible origins for this long saturation and relaxation times are discussed.

cond-mat.mtrl-sci↗

arXiv2021

Piezoelectricity in hafnia

Because of its compatibility with semiconductor-based technologies, hafnia (HfO$_{2}$) is today's most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this all-important compound is still lacking. Interestingly, HfO$_2$ has recently been predicted to display a negative longitudinal piezoelectric effect, which sets it apart form classic ferroelectrics (e.g., perovskite oxides like PbTiO$_3$) and is reminiscent of the behavior of some organic compounds. The present work corroborates this behavior, by first-principles calculations and an experimental investigation of HfO$_2$ thin films using piezoresponse force microscopy. Further,the simulations show how the chemical coordination of the active oxygen atoms is responsible for the negative longitudinal piezoelectric effect. Building on these insights, it is predicted that, by controlling the environment of such active oxygens (e.g., by means of an epitaxial strain), it is possible to change the sign of the piezoelectric response of the material.

cond-mat.mtrl-sci↗

arXiv2021

Large heat flux in electrocaloric multilayer capacitors

Multi Layer Capacitors MLCs are considered as the most promising refrigerant elements to design and develop electrocaloric cooling devices. Recently, the heat transfer of these MLCs has been considered. However, the heat exchange with the surrounding environment has been poorly, if not, addressed. In this work, we measure by infrared thermography the temperature change versus time in four different heat exchange configurations. Depending on the configurations, Newtonian and non-Newtonian regimes with their corresponding Biot number are determined allowing to provide useful thermal characteristics. Indeed, in case of large area thermal pad contacts, heat transfer coefficients up to 3400 W m-2 K-1 are obtained showing that the standard MLCs already reach the needs for designing efficient prototypes. We also determine the ideal Brayton cooling power in case of thick wires contact which varies between 3.4 mW and 9.8 mW for operating frequencies varying from 0.25 Hz to 1 Hz. While only heat conduction is considered here, our work provides some design rules for improving heat exchanges in future devices.

physics.app-ph↗

arXiv2021

Direct visualization of antiferroelectric switching dynamics via electrocaloric imaging

The large electrocaloric coupling in PbZrO3 allows using high-speed infrared imaging to visualize antiferroelectric switching dynamics via the associated temperature change. We find that in ceramic samples of homogeneous temperature and thickness, switching is nucleation-limited and fast, with devices responding in the milisecond range. By introducing gradients of thickness, however, it is possible to change the dynamics from nucleation-limited to propagation-limited, whereby a single phase boundary sweeps across the sample like a cold front, at a speed of c.a. 20 cm/s. Additionally, introducing thermostatic temperature differences between two sides of the sample enables the simultaneous generation of a negative electrocaloric effect on one side and a positive one on the other, yielding a Janus-like electrocaloric response.

cond-mat.mtrl-sci↗

arXiv2020

Critical field anisotropy in the antiferroelectric switching of PbZrO3 films

Antiferroelectrics have been recently sparking interest due to their potential use in energy storage and electrocaloric cooling. Their main distinctive feature is antiferroelectric switching, i.e. the possibility to induce a phase transition to a polar phase by an electric field. Here we investigate the switching behavior of the model antiferroelectric perovskite PbZrO3 using thin films processed by chemical solution deposition in different geometries and orientations. Both out-of-plane and in-plane switching configurations are investigated. The critical field is observed to be highly dependent on the direction of the electric field with respect to the film texture. We show that this behaviour is qualitatively consistent with a phase transition to a rhombohedral polar phase. We finally estimate the importance of crystallite orientation and film texturation in the variations observed in the literature.

cond-mat.mtrl-sci↗

arXiv2020

Origin of the Large Negative Electrocaloric Effect in Antiferroelectric PbZrO3

We have studied the electrocaloric response of the archetypal antiferroelectric PbZrO3 as a function of voltage and temperature in the vicinity of its antiferroelectric-paraelectric phase transition. Large electrocaloric effects of opposite signs, ranging from an electro-cooling of -3.5 K to an electro-heating of +5.5 K, were directly measured with an infrared camera. We show by calorimetric and electromechanical measurements that the large negative electrocaloric effect comes from an endothermic antiferroelectric-ferroelectric switching, in contrast to dipole destabilization of the antiparallel lattice, previously proposed as an explanation for the negative electrocaloric effect of antiferroelectrics.

cond-mat.mtrl-sci↗