Scalable, Simple, and Versatile Encapsulation of 2D Materials and Devices
Air-sensitive 2D materials present a fundamental challenge for device integration. Encapsulation is often required to preserve intrinsic properties, yet conventional protection strategies often fail for thicker layers and complicate fabrication. Here, we demonstrate that electron-beam (e-beam) evaporated aluminum oxide ($\mathrm{AlO}_x$) serves as both an effective encapsulation layer and a platform for direct device fabrication. Unlike transfer-based approaches, this scalable method is compatible with thicker flakes and full device or wafer coverage. It requires no stacking procedures and enables contacts without post-encapsulation etching. Using rare-earth tritellurides ($\mathrm{RTe}_3$, R = La, Er), semimetallic $\mathrm{WTe}_2$, and superconducting $\mathrm{FeTe}_x\mathrm{Se}_{1-x}$, we show that $\mathrm{AlO}_x$ suppresses oxidation and preserves intrinsic optical and electronic properties. We establish substrate-dependent optimization of encapsulation across a range of flake thicknesses, demonstrate that ultrathin $\mathrm{AlO}_x$ preserves $\mathrm{WTe}_2$'s plasmonic response and maintains superconducting performance in $\mathrm{FeTe}_x\mathrm{Se}_{1-x}$. Thus we overcome the longstanding tradeoff between encapsulation and straightforward device fabrication in fragile quantum materials.