arXiv subjects

Dongyang Wan

Publications and source records attributed to Dongyang Wan.

4 recordsLinked to original sources

arXiv2026

Phonon-Bottleneck-Governed Ultrafast Hot-Carrier Super-Diffusion in Transition Metal Dichalcogenides

Two-dimensional transition metal dichalcogenides (TMDCs) are promising for low-power optoelectronics, yet their operational speed is widely considered constrained by low room-temperature mobilities and carrier transit delays. Here, by combining on-chip terahertz optoelectronic sampling with thermally evaporated Ohmic contacts, we eliminate external parasitic delays and directly capture the intrinsic interfacial photoresponse in unencapsulated TMDCs under zero bias. The devices achieve ultrafast relaxation lifetimes of 48.5 ps in MoS2/Au and 14.2 ps in MoSe2/Ag, translating to intrinsic 3-dB bandwidths of 4.4 GHz and 7.5 GHz, respectively. Spatial scanning and bias-dependent measurements show that this response is position-independent and bias-immune, ruling out conventional drift-limited transport and identifying hot-carrier super-diffusion driven by an interfacial electron temperature gradient as the operative mechanism. Furthermore, ultrafast pump-probe spectroscopy reveals that the macroscopic response time is quantitatively synchronized with the microscopic optical-to-acoustic phonon scattering lifetime governed by the intrinsic phonon bottleneck. Our findings establish phonon engineering as a viable paradigm to tailor non-equilibrium optoelectronic dynamics, offering a blueprint for zero-bias, ultrafast, self-powered devices.

cond-mat.mes-hall↗

arXiv2020

Phase diagram and superconducting dome of infinite-layer $\mathrm{Nd_{1-x}Sr_{x}NiO_{2}}$ thin films

Infinite-layer Nd1-xSrxNiO2 thin films with Sr doping level x from 0.08 to 0.3 were synthesized and investigated. We found a superconducting dome to be between 0.12 and 0.235 which is accompanied by a weakly insulating behaviour in both underdoped and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x higher than 0.18, the normal state Hall coefficient ($R_{H}$) changes the sign from negative to positive as the temperature decreases. The temperature of the sign changes monotonically decreases with decreasing x from the overdoped side and approaches the superconducting dome at the mid-point, suggesting a reconstruction of the Fermi surface as the dopant concentration changes across the center of the dome.

cond-mat.supr-con↗

arXiv2017

The Mechanism of Electrolyte Gating on High-Tc Cuprates: The Role of Oxygen Migration and Electrostatics

Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent reports have argued that the electrolyte gating effect in VO2, TiO2 and SrTiO3 originated from field-induced oxygen vacancy formation. This gives rise to a controversy about the gating mechanism, and it is therefore vital to reveal the relationship between the role of electrolyte gating and the intrinsic properties of materials. Here, we report entirely different mechanisms of electrolyte gating on two high-Tc cuprates, NdBa2Cu3O7-{\delta} (NBCO) and Pr2-xCexCuO4 (PCCO), with different crystal structures. We show that field-induced oxygen vacancy formation in CuO chains of NBCO plays the dominant role while it is mainly an electrostatic field effect in the case of PCCO. The possible reason is that NBCO has mobile oxygen in CuO chains while PCCO does not. Our study helps clarify the controversy relating to the mechanism of electrolyte gating, leading to a better understanding of the role of oxygen electro migration which is very material specific.

cond-mat.str-el↗

arXiv2016

The Nature of Electron Transport and visible light absorption in Strontium Niobate -- A Plasmonic Water Splitter

Semiconductor compounds are widely used for water splitting applications, where photo-generated electron-hole pairs are exploited to induce catalysis. Recently, powders of a metallic oxide (Sr$_{1-x}$NbO$_3$, 0.03 < x < 0.20) have shown competitive photocatalytic efficiency, opening up the material space available for finding optimizing performance in water-splitting applications. The origin of the visible light absorption in these powders was reported to be due to an interband transition and the charge carrier separation was proposed to be due to the high carrier mobility of this material. In the current work we have prepared epitaxial thin films of Sr$_{0.94}$NbO$_{3+{\delta}}$ and found that the bandgap of this material is ~4.1 eV, which is very large. Surprisingly the carrier density of the conducting phase reaches 10$^{22}$ cm$^{-3}$, which is only one order smaller than that of elemental metals and the carrier mobility is only 2.47 cm$^2$/(V$\cdot$s). Contrary to earlier reports, the visible light absorption at 1.8 eV (~688 nm) is due to the bulk plasmon resonance, arising from the large carrier density, instead of an interband transition. Excitation of the plasmonic resonance results in a multifold enhancement of the lifetime of charge carriers. Thus we propose that the hot charge carriers generated from decay of plasmons produced by optical absorption is responsible for the water splitting efficiency of this material under visible light irradiation.

cond-mat.mtrl-sci↗