arXiv subjects

Dominik Kriegner

Publications and source records attributed to Dominik Kriegner.

At least 19 recordsLinked to original sources

arXiv2026

Laser-Induced Rashba Spin-Orbit Torques in Multiferroic Semiconductor (Ge,Mn)Te

The multiferroic semiconductor GeMnTe exhibits ferroelectricity, strong Rashba spin-orbit coupling, and carrier-mediated magnetic order, making it a unique platform for exploring the interplay among electronic, structural, and magnetic degrees of freedom. In this study, we investigate the ultrafast magnetization dynamics of Ge0.85Mn0.15Te using time-resolved magneto-optical spectroscopy. By separating magnetic and nonmagnetic contributions in the transient response, we identify two distinct laser-induced magnetic phenomena, both resulting from photoinduced effective spin-orbit torque. Coherent magnetization precession arises from a laser-induced increase in hole concentration, which modifies the occupation of Rashba-split spin-locked valence band states and alters the magnetic easy axis. The transient change in magnetic ordering, observed as variations in the coercive field, is attributed to laser-induced modifications of the ferroelectric sublattice displacement, which affect the ferroelectric polarization and the associated Rashba spin-orbit interaction. While the first type of optical spin-orbit torque has already been observed in the diluted magnetic semiconductor (Ga,Mn)As, the second effect is unique to the multiferroic Rashba semiconductor (Ge,Mn)Te, opening new opportunities for all-optical manipulation of magnetic order and spin-orbit torque generation in spin-orbitronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Electrical and thermal magnetotransport in altermagnetic CrSb

Chromium antimonide has emerged as a key material platform for studying altermagnetism because of its simple binary composition, high N\'eel temperature, and semimetallic electronic structure. Here, we investigate electrical and thermal magnetotransport in single-crystalline CrSb using steady-and pulsed-magnetic fields up to 65 T, and complement these measurements with neutron diffraction and magnetization data. We confirm the compensated magnetic structure and observe a large nonsaturating magnetoresistance together with a pronounced nonlinear Hall response at low temperatures. Multicarrier modeling, supported by mobility-spectrum analysis, reveals coexisting electron- and hole-like charge carriers with mobilities up to ~3000 cm2/Vs and shows that the number of transport channels that can be resolved strongly depends on the accessible magnetic-field range. Thermal-transport measurements further reveal a nonlinear thermal Hall response and a thermal conductivity substantially exceeding a simple Wiedemann-Franz law. The broadly similar field and temperature evolution of electrical and thermal transport point to a dominant electronic contribution, while the remaining deviations indicate additional heat-carrying channels.

cond-mat.mtrl-sci↗

arXiv2026

Fermi-surface studies of altermagnetic CrSb from Shubnikov-de Haas oscillations

Within the family of altermagnets, CrSb is a metallic, collinearly ordered material that exhibits particularly strong symmetry-induced spin splitting in its band structure. In this study, we combine electrical magnetotransport measurements up to 68 T on microfabricated single-crystalline CrSb with first-principles calculations to investigate its Fermi surface. Notably, we study the temperature and field-orientation dependence of magnetic quantum oscillations observed in the magnetoresistance. The observed frequency spectrum agrees well with results from density-functional-theory calculations. Our results confirm the predicted electronic band structure of altermagnetic CrSb and highlight the importance of high magnetic fields for accurately mapping the Fermi surfaces of unconventional emergent materials.

cond-mat.mtrl-sci↗

arXiv2025

Direct demonstration of time-reversal-symmetry-breaking spin injection from a compensated magnet

The injection, propagation and detection of spin currents are essential physical processes in spintronics. So far, the separation of charge and spin currents was facilitated by the electrical spin injection from a ferromagnet (FM) or the injection by a relativistic spin Hall effect. The devices employed are lateral spin valves comprising spatially separated injection and detection electrodes, connected by a spin-propagation channel. The time-reversal symmetry (TRS) breaking FM spin injection is realized in a geometry with an electrical bias applied between the injection electrode and the channel and is modelled by a conserved spin-polarized drift current. In contrast, the spin injection by the T-symmetric relativistic spin Hall mechanism is driven by an electrical bias applied across the injection electrode alone, and is modelled by a non-conserved spin current transverse to the applied bias. In this work, we use a lateral spin valve with a Mn5Si3 injection electrode to directly demonstrate a TRS-breaking spin injection from a compensated magnet with a vanishing net magnetization. Specifically, the TRS-breaking is demonstrated by the fact that switching between time-reversed states of the compensated magnet changes the detected spin signal. Moreover, the TRS-breaking nature of the spin injection is observed in both experimental geometries with the different electrical biasing, while using the same detection electrode. We show that this unconventional spin-injection is consistent with different magnitudes and propagation angles of electrical currents in the spin-up and spin-down channel in a d-wave altermagnet. Here our symmetry analysis and first-principles calculations are based on the compensated collinear altermagnetic order which has provided a comprehensive microscopic interpretation of earlier structural, magnetic, and anomalous Hall and Nernst measurements in Mn5Si3 thin films.

cond-mat.mes-hall↗

arXiv2025

Anomalous temperature dependence of local magnetic fields in altermagnetic MnTe

Altermagnets are a novel type of magnetic system that has a spin-polarised electric band structure in the absence of a net magnetic moment, leading to exciting prospects in potential device applications. Hexagonal MnTe, a prototypical altermagnet, has arguably shown the most properties consistent with theoretical predictions, including an anomalous Hall effect despite no net magnetisation, and strong altermagnet-induced spin splitting in the electronic band structure. Here we present muon-spin spectroscopy measurements of a single crystal of MnTe. Below room temperature we observe pronounced anomalies in the muon-spin depolarisation, as well as the onset of a second, non-proportional internal field in the absence of an applied field. These findings point to a change in the magnetic structure around $T\simeq250$ K, which coincides with other changes in reported properties, such as transport.

cond-mat.mtrl-sci↗

arXiv2025

Spin Hall magnetoresistance at the altermagnetic insulator/Pt interface

The resistance of a heavy metal can be modulated by an adjacent magnetic material through the combined effects of the spin Hall effect, inverse spin Hall effect, and dissipation of the spin accumulation at the interface. This phenomenon is known as the spin Hall magnetoresistance. The dissipation of the spin accumulation can occur via various mechanisms, with spin-transfer torque being the most extensively studied. In this work, we report the observation of spin Hall magnetoresistance at the interface between platinum and an insulating altermagnetic candidate, Ba$_2$CoGe$_2$O$_7$. Our findings reveal that this heterostructure exhibits a relatively large spin Hall magnetoresistance signal, which is anisotropic with respect to the crystal orientation of the current channel. We explore and rule out several potential explanations for this anisotropy and propose that our results may be understood in the context of the anisotropies of the spin current channels across the Pt/altermagnetic Ba$_2$CoGe$_2$O$_7$ interface.

cond-mat.mes-hall↗

arXiv2024

Quench switching of Mn2As

We demonstrate that epitaxial thin film antiferromagnet Mn2As exhibits the quench-switching effect, which was previously reported only in crystallographically similar antiferromagnetic CuMnAs thin films. Quench switching in Mn2As shows stronger increase in resistivity, reaching hundreds of percent at 5K, and significantly longer retention time of the metastable high-resistive state before relaxation towards the low-resistive uniform magnetic state. Qualitatively, Mn2As and CuMnAs show analogous parametric dependence of the magnitude and relaxation of the quench-switching signal. Quantitatively, relaxation dynamics in both materials show direct proportionality to the N\'eel temperature. This confirms that the quench switching has magnetic origin in both materials. The presented results suggest that the antiferromagnets crystalizing in the Cu2Sb structure are well suited for exploring and exploiting the intriguing physics of highly non-uniform magnetic states associated with the quench switching.

cond-mat.mtrl-sci↗

arXiv2024

Altermagnetic variants in thin films of Mn5Si3

The altermagnet candidate Mn5Si3 has attracted wide attention in the context of non-relativistic spin physics, due to its composition of light elements. However, the presumed structure of the altermagnetic phase had yet to be demonstrated. In this study, we demonstrate a hallmark of altermagnetism in Mn5Si3 thin films, namely the three options, or variants, for the checkerboard distribution of the magnetic Mn atoms. The magnetic symmetries were altered by field-rotation of the N\'eel vector along relevant crystal directions, resulting in anomalous Hall effect anisotropy. The experimental results in nanoscale devices were corroborated by a theoretical model involving atomic site dependent anisotropy and bulk Dzyaloshinskii-Moriya interaction for a single variant.

cond-mat.mes-hall↗

arXiv2024

In-situ monitoring the magnetotransport signature of topological transitions in the chiral magnet Mn$_{1.4}$PtSn

Emerging magnetic fields related to the presence of topologically protected spin textures such as skyrmions are expected to give rise to additional, topology-related contributions to the Hall effect. In order to doubtlessly identify this so-called topological Hall effect, it is crucial to disentangle such contributions from the anomalous Hall effect. This necessitates a direct correlation of the transversal Hall voltage with the underlying magnetic textures. We utilize a novel measurement platform that allows to acquire high-resolution Lorentz transmission electron microscopy images of magnetic textures as a function of an external magnetic field and to concurrently measure the (anomalous) Hall voltage in-situ in the microscope on one and the same specimen. We use this approach to investigate the transport signatures of the chiral soliton lattice and antiskyrmions in Mn$_{1.4}$PtSn. Notably, the observed textures allow to fully understand the measured Hall voltage without the need of any additional contributions due to a topological Hall effect, and the field-controlled formation and annihilation of anstiskyrmions are found to have no effect on the measurend Hall voltage.

cond-mat.mes-hall↗

arXiv2024

Detecting slow magnetization relaxation via magnetotransport measurements based on the current-reversal method

Slow magnetization relaxation processes are an important time-dependent property of many magnetic materials. We show that magnetotransport measurements based on a well-established current-reversal method can be utilized to implement a simple and robust screening scheme for such relaxation processes. We demonstrate our approach considering the anomalous Hall effect in a Pt/Co/AlOx trilayer model system, and then explore relaxation in τ -MnAl films. Compared to magnetotransport experiments based on ac lock-in techniques, we find that the dc current-reversal method is particulary sensitive to relaxation processes with relaxation time scales on the order of seconds, comparable to the current-reversal measurement time scales.

cond-mat.mtrl-sci↗

arXiv2024

Anisotropic magnetoresistance in altermagnetic MnTe

Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order.

cond-mat.mtrl-sci↗

arXiv2024

Observation of the anomalous Nernst effect in altermagnetic candidate Mn5Si3

The anomalous Nernst effect generates transverse voltage to the applied thermal gradient in magnetically ordered systems. The effect was previously considered excluded in compensated magnetic materials with collinear ordering. However, in the recently identified class of compensated magnetic materials, dubbed altermagnets, time-reversal symmetry breaking in the electronic band structure makes the presence of the anomalous Nernst effect possible despite the collinear spin arrangement. In this work, we investigate epitaxial Mn5Si3 thin films known to be an altermagnetic candidate. We show that the material manifests a sizable anomalous Nernst coefficient despite the small net magnetization of the films. The measured magnitudes of the anomalous Nernst coefficient reach a scale of microVolts per Kelvin. We support our magneto-thermoelectric measurements by density-functional theory calculations of the material's spin-split electronic structure, which allows for the finite Berry curvature in the reciprocal space. Furthermore, we present our calculations of the intrinsic Berry-curvature Nernst conductivity, which agree with our experimental observations.

cond-mat.mtrl-sci↗

arXiv2024

The effect of niobium thin film structure on losses in superconducting circuits

The performance of superconducting microwave circuits is strongly influenced by the material properties of the superconducting film and substrate. While progress has been made in understanding the importance of surface preparation and the effect of surface oxides, the complex effect of superconductor film structure on microwave losses is not yet fully understood. In this study, we investigate the microwave properties of niobium resonators with different crystalline properties and related surface topographies. We analyze a series of magnetron sputtered films in which the Nb crystal orientation and surface topography are changed by varying the substrate temperatures between room temperature and 975 K. The lowest-loss resonators that we measure have quality factors of over one million at single-photon powers, among the best ever recorded using the Nb on sapphire platform. We observe the highest quality factors in films grown at an intermediate temperature regime of the growth series (550 K) where the films display both preferential ordering of the crystal domains and low surface roughness. Furthermore, we analyze the temperature-dependent behavior of our resonators to learn about how the quasiparticle density in the Nb film is affected by the niobium crystal structure and the presence of grain boundaries. Our results stress the connection between the crystal structure of superconducting films and the loss mechanisms suffered by the resonators and demonstrate that even a moderate change in temperature during thin film deposition can significantly affect the resulting quality factors.

quant-ph↗

arXiv2024

Anisotropy of the anomalous Hall effect in the altermagnet candidate Mn$_5$Si$_3$ films

Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the anisotropic local crystal environment of the different sublattices lowers the symmetry of the system so that the opposite-spin sublattices are connected only by rotations, which results in an unconventional spin-polarized band structure in the momentum space. This low symmetry of the crystal structure is expected to be reflected in the anisotropy of the anomalous Hall effect. In this work, we study the anisotropy of the anomalous Hall effect in epitaxial thin films of Mn$_5$Si$_3$, an altermagnetic candidate material. We first demonstrate a change in the relative N\'eel vector orientation when rotating the external field orientation through systematic changes in both the anomalous Hall effect and the anisotropic longitudinal magnetoresistance. We then show that the anomalous Hall effect in this material is anisotropic with the N\'eel vector orientation relative to the crystal structure and that this anisotropy requires high crystal quality and unlikely correlates with the magnetocrystalline anisotropy. Our results provide further systematic support to the case for considering epitaxial thin films of Mn$_5$Si$_3$ as an altermagnetic candidate material.

cond-mat.mes-hall↗

arXiv2023

Even-in-magnetic field part of transverse resistivity as a probe of magnetic transitions

The component of the resistivity tensor $\rho_{ij}$ corresponding to voltage transverse to both an applied current and a magnetic field can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effect. The latter is often ascribed to experimental artefacts and ignored. Here, we show that upon suppressing these artefacts in carefully controlled experiments, useful information remains. We first investigate the well-explored ferromagnet CoFeB, where the even part of $\rho_{yx}$ contains a contribution from the anisotropic magnetoresistance, which we confirm by Stoner--Wohlfarth modelling. We then apply our approach to magnetotransport measurements of $\rm Mn_5Si_3$ thin films, which undergo a transition from non-collinear to an altermagnetic collinear state. In this material, the even part of the transverse signal is sizable only in the low-spin-symmetry phase below $\approx 80$~K. Transverse resistivity measurements thus offer a simple and readily available probe of magnetic order transitions.

cond-mat.mes-hall↗

arXiv2023

Anomalous Hall effect and magnetoresistance in micro-ribbons of the magnetic Weyl semimetal candidate PrRhC2

PrRhC2 belongs to the rare-earth carbides family whose properties are of special interest among topological semimetals due to the simultaneous breaking of both inversion and time-reversal symmetry. The concomitant absence of both symmetries grants the possibility to tune the Weyl nodes chirality and to enhance topological effects like the chiral anomaly. In this work, we report on the synthesis and compare the magnetotransport measurements of a poly- and single crystalline PrRhC2 sample. Using a remarkable and sophisticated technique, the PrRhC2 single crystal is prepared via focused ion beam cutting from the polycrystalline material. Our magnetometric and specific heat analyses reveal a non-collinear antiferromagnetic state below 20K, as well as short-range magnetic correlations and/or magnetic fluctuations well above the onset of the magnetic transition. The transport measurements on the PrRhC2 single crystal display an electrical resistivity peak at 3K and an anomalous Hall effect below 6K indicative of a net magnetization component in the ordered state. Furthermore, we study the angular variation of magnetoresistivities as a function of the angle between the in-plane magnetic field and the injected electrical current. We find that both the transverse and the longitudinal resistivities exhibit fourfold angular dependencies due to higher-order terms in the resistivity tensor, consistent with the orthorhombic crystal symmetry of PrRhC2. Our experimental results may be interpreted as features of topological Weyl semimetallic behavior in the magnetotransport properties.

cond-mat.mtrl-sci↗

arXiv2023

Saturation of the anomalous Hall effect at high magnetic fields in altermagnetic RuO2

Observations of the anomalous Hall effect in RuO$_2$ and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in MnTe the unconventional anomalous Hall signal accompanied by a vanishing magnetization is observable at remanence, the anomalous Hall effect in RuO$_2$ is excluded by symmetry for the Néel vector pointing along the zero-field [001] easy-axis. Guided by a symmetry analysis and ab initio calculations, a field-induced reorientation of the Néel vector from the easy-axis towards the [110] hard-axis was used to demonstrate the anomalous Hall signal in this altermagnet. We confirm the existence of an anomalous Hall effect in our RuO$_2$ thin-film samples whose set of magnetic and magneto-transport characteristics is consistent with the earlier report. By performing our measurements at extreme magnetic fields up to 68 T, we reach saturation of the anomalous Hall signal at a field $H_{\rm c} \simeq$ 55 T that was inaccessible in earlier studies, but is consistent with the expected Néel-vector reorientation field.

cond-mat.mes-hall↗

arXiv2023

Magnetic domain engineering in antiferromagnetic CuMnAs and Mn$_2$Au devices

Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or non-scalable control of the magnetic order. Here, we demonstrate simple and functional ways of influencing the domain structure in CuMnAs and Mn2Au, two key materials of antiferromagnetic spintronics research, using device patterning and strain engineering. Comparing x-ray microscopy data from two different materials, we reveal the key parameters dictating domain formation in antiferromagnetic devices and show how the non-trivial interaction of magnetostriction, substrate clamping and edge anisotropy leads to specific equilibrium domain configurations. More specifically, we observe that patterned edges have a significant impact on the magnetic anisotropy and domain structure over long distances, and we propose a theoretical model that relates short-range edge anisotropy and long-range magnetoelastic interactions. The principles invoked are of general applicability to the domain formation and engineering in antiferromagnetic thin films at large, which will pave the way towards realizing truly functional antiferromagnetic devices.

cond-mat.mtrl-sci↗