arXiv subjects

Dmitry Svintsov

Publications and source records attributed to Dmitry Svintsov.

At least 19 recordsLinked to original sources

arXiv2026

Large Nernst effect in chemically derived multilayer graphene at millitesla magnetic fields

Simple synthesis of graphitic compounds, their high conductivity, and integrability with other materials motivate the effort toward graphite-based thermoelectric generators. At the same time, semimetallic nature of graphite and graphene results in nearly-zero thermopower due to electron-hole compensation. Here, we observe large transverse thermopower in chemically derived multilayer graphene films with strong fluctuations of thickness and carrier density at low magnetic fields $B$. Using the scanning laser-induced heating of macroscopic film, we find that transverse (Nernst) thermoelectric voltage becomes comparable to the longitudinal thermoelectric voltage at the metal-doped graphene contact at $B^*\approx4$ mT and ambient conditions. Estimates of transverse thermopower $S_{xy}$ based on the known laser-induced temperature show that it is as large as $\sim 10$ $\mu$V/K at $B^*$, and raises in a sub-linear fashion to 250 $\mu$V/K at $B\approx315$ mT, the maximum field we reach with centimeter-sized permanent magnet. Extra increase in thermoelectric signal is achieved upon voltage measurement at Hall probes when the dc field lines are co-directional with local Nernst current. Our results show the promise of large-scale multilayer graphene for thermoelectricity generation.

cond-mat.mes-hall↗

arXiv2026

Perfect absorption by metal-contacted two-dimensional systems with ultra-proximate reflectors

Electromagnetic absorbance by most two-dimensional electron systems is typically well below unity, which hinders both practical applications in photodetection and fundamental studies of their optical properties. Here, we show that a periodic structure comprised of narrow two-dimensional sections connected with wide perfectly conducting metal sections enables large absorbance. It reaches 50 \% provided the filling factor by the two-dimensional system $f$ equals its dimensionless conductivity $\eta=\sigma Z_0/2$, where $Z_0$ is the free-space impedance. The absorbance is further raised to 100 \% if the periodic structure is placed above a perfectly conducting electromagnetic reflector, and provided $f=2\eta$. Surprisingly, the optimal distance between two-dimensional system and reflector may fall well below the quarter of incident wavelength $\lambda_0/4$, which was assumed as conventional absorption enhancement condition in optics. For low filling factors $f\ll1$, large dielectric constants of the substrate, and grating periods comparable with $\lambda_0$, the optimal distance to reflector tends to zero. Above the critical values of the grating geometrical parameters, the absorbance maximum ceases to exist. The critical behavior manifests as a large-amplitude resonance in 'dirty' two-dimensional system with purely real conductivity, while enhancement of carrier momentum relaxation time lowers the resonant peak. Such resonance mimics the plasmonic one, but does not rely on high electron mobility.

cond-mat.mes-hall↗

arXiv2026

Lamb Shift of Landau Levels in Two-Dimensional Electron Systems in a Multimode Resonator

The use of resonators to modify the behavior of electromagnetic systems demonstrates its potential for application in a wide range of problems. However, existing theoretical studies often resort to the single-mode approximation, rarely considering a second resonator mode. In this paper, we show that including a large number of resonator modes in the model significantly enhances the softening effect of the cyclotron frequency of a two-dimensional electron system. We address this problem by demonstrating the possibility of reducing the system to a set of coupled harmonic oscillators and finding the eigenfrequencies of the oscillators. This is made possible by applying the self-energy method for modes in one polarization and the method for finding the eigenvalues of matrices that have undergone first-rank updating for modes in the perpendicular polarization.

cond-mat.mes-hall↗

arXiv2026

Photocurrent at oblique illumination and reconstruction of wavefront direction with 2d photodetectors

Many contemporary photodetectors operate beyond the readout of light intensity and enable the reconstruction of spectrum and polarization at the single-pixel level. However, the determination of light incidence direction with reconstructive detectors has not been realized so far. We show that photodetectors based on symmetric junctions of metals and 2d electron systems (2DES) enable (1) zero-bias photocurrent at oblique light incidence (2) reconstruction of incidence direction based on photocurrent measurements at variable carrier density. The former effect is based on peculiar electrodynamics of metal-contacted 2DES, where spatial variations of incident field phase translate into strong variations of local field amplitude. The local absorbances at two opposite metal-2DES junctions at oblique incidence are dissimilar, which results in finite photocurrent independent of microscopic rectification mechanism at these junctions. The direction of photocurrent uniquely determines the quadrant of light incidence. Quantitative determination of incidence angle becomes possible under conditions of 2d plasmon resonance at variable carrier density. In such a case, obliquely incident radiation excites the asymmetric plasmon modes, which amplitude carries unique information about angle of incidence.

cond-mat.mes-hall↗

arXiv2026

All-in-plane image sensors free from readout integrated circuits

High resolution image sensors require electrical access to each individual pixel for signal readout. Such access is especially challenging for ultra-miniaturized pixels, for heterogeneously integrated sensing and readout layers in long-wavelength detectors, and for novel light-sensing materials with unestablished integration to silicon chips. Here, we introduce and experimentally validate a novel imaging approach that does not require electrical connections to individual pixels. The sensor matrix involves photoresistive pixels connected neighbor-to-neighbor and packed into a rectangular lattice. The signal readout is based on electrical impedance tomography applied to the photoresistance: the photovoltage is measured at the matrix boundary at various positions of injected bias current, and the image is reconstructed algorithmically. We present experimental validations for moderate-size infrared imagers based on multilayer graphene (24 pixels) and amorphous vanadium oxide (264 pixels). The reconstruction procedure is mathematically stable, sustainable to variations of pixel resistivity and photosensitivity, and its complexity is that of linear system solution. The proposed method enables unprecedented architecture simplification of imaging devices.

cond-mat.mes-hall↗

arXiv2026

Universal reconstructive polarimetry with graphene-metal infrared photodetectors

Recent advent of smart photodetectors, where in-situ tuning of responsivity enables the reconstruction of light intensity, polarization and spectrum by a single device, has revolutionized the field of optoelectronics. So far, most such reconstructive detectors were realized with non-scalable technology of van der Waals stacking. Here, we demonstrate the infrared reconstructive polarimetry with photodetectors based on conventional gated graphene-metal junctions. The reconstruction exploits the gate tuning of polarization contrast, which enables the determination of both infrared power and polarization angle from photovoltage measurements at two different gate voltages. The physics enabling the polarimetry lies in polarization-dependent shift of the electron hot spot near the contact, and the gate tuning of photosensitive barrier width. We further show the universality of polarization reconstruction, i.e. its feasibility with different geometries of the junction, and with graphene of different quality, from boron-nitride encapsulated flakes to the scalable chemical vapor deposited films.

cond-mat.mes-hall↗

arXiv2025

Response times of two-dimensional photodetectors limited by intrinsic resistance and capacitance

Most contemporary architectures of photodetectors based on two-dimensional materials include global gates for carrier density control and local p-n junctions in the channel. We study the dependence of photocurrent in such detectors on the light modulation frequency, fully taking into account the effects of distributed resistance and gate-channel capacitance. The decay of photocurrent with modulation frequency governs the response time. We find that the maximum modulation frequency is largely determined by the position of light-sensitive junction with respect to the middle of the channel. Largest modulation frequency is achieved for junctions in immediate vicinity of either source or drain contacts, while fast roll-off of the modulation characteristic is observed for junction in the middle of the channel.

physics.app-ph↗

arXiv2025

Unconventional quantization of 2D plasmons in cavities formed by gate slots

We demonstrate that the slot between parallel metal gates placed above two-dimensional electron system (2DES) forms a plasmonic cavity with unconventional mode quantization. The resonant plasmon modes are excited when the slot width $L$ and the plasmon wavelength $\lambda$ satisfy the condition $L = \lambda/8 +n \times \lambda/2$, where $n=0, 1, 2 \ldots$. The lowest resonance occurs at a surprisingly small cavity size, specifically one eighth of the plasmon wavelength, which contrasts with the conventional half-wavelength Fabry-Perot cavities in optics. This unique quantization rule arises from a non-trivial phase shift of $-\pi/4$ acquired by the 2D plasmon upon reflection from the edge of the gate. The slot plasmon modes exhibit weak decay into the gated 2DES region, with the decay rate being proportional to the square root of the separation between the gate and the 2DES. Absorption cross-section by such slots reaches $\sim 50$ % of the fundamental dipole limit without any matching strategies, and is facilitated by field enhancement at the metal edges.

cond-mat.mes-hall↗

arXiv2025

Electromagnetic diffraction and bidirectional plasmon launching in partially gated 2d systems

Partially gated two-dimensional electron systems (2DES) represent the basic building block of prospective optoelectronic devices, including electromagnetic detectors and sources. At the same time, the electrodynamic properties of such structures have been addressed only with numerical simulations. Here, we provide an exact solution of electromagnetic scattering problem at a partially gated 2DES using the Wiener-Hopf technique. We find that incident p-polarized field is enhanced in immediate vicinity of gate edge. The edge acts as a plasmonic coupler that launches bidirectional (gated and ungated) plasmons in weakly-dissipative 2DES with impedance of inductive type. Electric fields in these waves markedly exceeds the incident field, especially in the limit of small gate-2DES separation. The amplitude of the ungated wave exceeds that of gated for 2DES reactance above the free-space impedance. Both amplitudes are maximized for the 2DES reactance of the order of free space impedance timed by the ratio of free space wavelength and gate-2DES separation.

cond-mat.mes-hall↗

arXiv2024

Slow interband recombination promotes an anomalous thermoelectric response of the $p-n$ junctions

Thermoelectric effects in $p-n$ junctions are widely used for energy generation with thermal gradients, creation of compact Peltier refrigerators and, most recently, for sensitive detection of infrared and terahertz radiation. It is conventionally assumed that electrons and holes creating thermoelectric current are in equilibrium and share the common quasi-Fermi level. We show that lack of interband equilibrium results in an anomalous sign and magnitude of thermoelectric voltage developed across the $p-n$ junction. The anomalies appear provided the diffusion length of minority carriers exceeds the size of hot spot at the junction. Normal magnitude of thermoelectric voltage is partly restored if interband tunneling at the junction is allowed. The predicted effects can be relevant to the cryogenically cooled photodetectors based on bilayer graphene and mercury cadmium telluride quantum wells.

cond-mat.mes-hall↗

arXiv2024

Photon drag at the junction between metal and 2d semiconductor

Photon drag represents a mechanism of photocurrent generation wherein the electromagnetic (EM) field momentum is transferred directly to the charge carriers. It is believed to be small by the virtue of low photon momentum compared to the typical momenta of the charge carriers. Here, we show that photon drag becomes particularly strong at the junctions between metals and 2d materials, wherein highly non-uniform local EM fields are generated upon diffraction. To this end, we combine an exact theory of diffraction at 'metal-2d material' junctions with microscopic transport theory of photon drag, and derive the functional dependences of the respective photovoltage on the parameters of EM field and 2d system. The voltage responsivity appears inversely proportional to the electromagnetic frequency $\omega$, the sheet density of charge, and a dimensionless momentum transfer coefficient $\alpha$ which depends only on 2d conductivity in units of light speed $\eta = 2\pi \sigma/c$ and light polarization. For $p$-polarized incident light, the momentum transfer coefficient appears finite even for vanishingly small 2d conductivity $\eta$, which is a consequence of dynamic lightning rod effect. For $s$-polarized incident light, the momentum transfer coefficient scales as $\eta \ln \eta^{-1}$, which stems from long-range dipole radiation of a linear junction. A simple estimate shows that the ratio of thermoelectric and photon drag photovoltages at the junction for $p$-polarization is roughly $\omega\tau_\varepsilon$, where $\tau_\varepsilon$ is the energy relaxation time, while for $s$-polarization the photon drag always dominates over the thermoelectric effect.

cond-mat.mes-hall↗

arXiv2024

Multifunctional 2d infrared photodetectors enabled by asymmetric singular metasurfaces

Two-dimensional materials offering ultrafast photoresponse suffer from low intrinsic absorbance, especially in the mid-infrared wavelength range. Challenges in 2d material doping further complicate the creation of light-sensitive $p-n$ junctions. Here, we experimentally demonstrate a graphene-based infrared detector with simultaneously enhanced absorption and strong structural asymmetry enabling zero-bias photocurrent. A key element for those properties is an asymmetric singular metasurface (ASMS) atop graphene with keen metal wedges providing singular enhancement of local absorbance. The ASMS geometry predefines extra device functionalities. The structures with connected metallic wedges demonstrate polarization ratios up to 200 in a broad range of carrier densities at a wavelength of 8.6 $\mu$m. The structures with isolated wedges display gate-controlled switching between polarization-discerning and polarization-stable photoresponse, a highly desirable yet scarce property for polarized imaging.

cond-mat.mes-hall↗

arXiv2024

Exact theory of edge diffraction and launching of transverse electric plasmons at two-dimensional junctions

An exact solution for electromagnetic wave diffraction at the junction of two-dimensional electron systems (2DES) is obtained and analyzed for electric field polarized along the edge. A special emphasis is paid to the metal-contacted and terminated edges. In the former case, electric field at the edge tends to zero; in the latter case, it tends to a finite value which is screened by 2d system in an anomalous fashion. For both types of edge and capacitive type of 2d conductivity, an incident wave excites transverse electric 2d plasmons. The amplitude of excited TE plasmons is maximized and becomes order of incident wave amplitude for capacitive impedance of 2DES order of free space impedance. For both large and small 2DES impedance, the amplitude of TE plasmons tends to zero according to the power laws which are explicitly derived.

cond-mat.mes-hall↗

arXiv2024

Testing the tomographic Fermi liquid hypothesis with high-order cyclotron resonance

Recent theoretical studies of carrier-carrier scattering in degenerate two-dimensional systems have revealed radically different relaxation times for odd and even angular harmonics of distribution function. This theoretical concept, dubbed as 'tomographic Fermi liquid', is yet challenging to test with dc electrical measurements as electron scattering weakly affects the electrical resistivity. Here, we show that linewidth and amplitude of electromagnetic absorption at the multiple harmonics of the cyclotron resonance carries all necessary information to test the tomographic Fermi liquid hypothesis. Namely, the height and inverse width of $m$-th order cyclotron resonance ($m \ge 2$) is proportional to the lifetime of $m$-th angular harmonic of electron distribution function $\tau_m$, if probed at wavelengths exceeding the cyclotron radius $R_c$. Measurements of high-order cyclotron resonance at short wavelengths order of $R_c$ also enable a direct determination of all lifetimes $\tau_m$ from a simple linear system of equations that we hereby derive. Extraction of cyclotron resonance lifetimes from an experiment on terahertz photoconductivity in graphene shows that third-order resonance is systematically narrower than second-order one, supporting the prediction of tomographic Fermi liquid hypothesis.

cond-mat.str-el↗

arXiv2023

Electron-hole collision-limited resistance of gapped graphene

Collisions between electrons and holes can dominate the carrier scattering in clean graphene samples in the vicinity of charge neutrality point. While electron-hole limited resistance in pristine gapless graphene is well-studied, its evolution with induction of band gap $E_g$ is less explored. Here, we derive the functional dependence of electron-hole limited resistance of gapped graphene $\rho_{eh}$ on the ratio of gap and thermal energy $E_g/kT$. At low temperatures and large band gaps, the resistance grows linearly with $E_g/kT$, and possesses a minimum at $E_g \approx 2.5 kT$. This contrast to the Arrhenius activation-type behaviour for intrinsic semiconductors. Introduction of impurities restores the Arrhenius law for resistivity at low temperatures and/or high doping densities. The hallmark of electron-hole collision effects in graphene resistivity at charge neutrality is the crossover between exponential and power-law resistivity scalings with temperature.

cond-mat.mes-hall↗

arXiv2023

Selective damping of plasmons in coupled two-dimensional systems by Coulomb drag

The Coulomb drag is a many-body effect observed in proximized low-dimensional systems. It appears as emergence of voltage in one of them upon passage of bias current in another. The magnitude of drag voltage can be strongly affected by exchange of plasmonic excitations between the layers; however, the reverse effect of Coulomb drag on properties of plasmons has not been studied. Here, we study the plasmon spectra and damping in parallel two-dimensional systems in the presence of Coulomb drag. We find that Coulomb drag leads to selective damping of one of the two fundamental plasma modes of a coupled bilayer. For identical electron doping of both layers, the drag suppresses the acoustic plasma mode; while for symmetric electron-hole doping of the coupled pair, the drag suppresses the optical plasma mode. The selective damping can be observed both for propagating modes in extended bilayers and for localized plasmons in bilayers confined by source and drain contacts. The discussed effect may provide access to the strength of Coulomb interaction in 2d electron systems from various optical and microwave scattering experiments.

cond-mat.mes-hall↗

arXiv2023

Ultimate sharpness of the tunneling resonance in vertical heterostructures

Heterostructures comprised of two two-dimensional electron systems (2DES) separated by a dielectric exhibit resonant tunneling when the band structures of both systems are aligned. It is commonly assumed that the height and width of the resonant peak in the tunneling current is determined by electron scattering and rotational misalignment of crystal structures of the 2DES. We identify two fundamental factors limiting the maximum height and steepness of the resonance: coupling to contacts and tunnel splitting of energy levels. The upper limit of the tunneling current is the number of electrons available for tunneling times half the tunnel coupling between the 2DES. As a result of a tradeoff between the contact-induced level broadening and contact resistance, the maximum current is only achievable when the coupling to contacts equals the tunnel level splitting. According to our model calculations, the limiting behavior can be observed in double-gated graphene/few-layer hexagonal boron nitride/graphene heterostructures.

cond-mat.mes-hall↗

arXiv2023

Refraction laws for two-dimensional plasmons

Despite numerous applications of two-dimensional plasmons for electromagnetic energy manipulation at the nanoscale, their quantitative refraction and reflection laws (analogs of Fresnel formulas in optics) have not yet been established. This fact can be traced down to the strong non-locality of equations governing the 2d plasmon propagation. Here, we tackle this difficulty by direct solution of plasmon scattering problem with Wiener-Hopf technique. We obtain the reflection and transmission coefficients for 2d plasmons at the discontinuity of 2d conductivity at arbitrary incidence angle, for both gated and non-gated 2d systems. At a certain incidence angle, the absolute reflectivity has a pronounced dip reaching zero for gated plasmons. The dip is associated with wave passage causing no dynamic charge accumulation at the boundary. For all incidence angles, the reflection has a non-trivial phase different from zero and $\pi$.

physics.optics↗