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Devis Bellucci

Publications and source records attributed to Devis Bellucci.

5 recordsLinked to original sources

Quantum phases of correlated electrons in artificial molecules under magnetic fields

We investigate the stability of few-electron quantum phases in vertically coupled quantum dots under a magnetic field of arbitrary strength and direction. The orbital and spin stability diagrams of realistic devices containing up to five electrons, from strong to weak inter-dot coupling, is determined. Correlation effects and realistic sample geometries are fully taken into account within the Full Configuration Interaction method. In general, the magnetic field drives the system into a strongly correlated regime by modulating the single-particle gaps. In coupled quantum dots different components of the field, either parallel or perpendicular to the tunneling direction, affect single-dot orbitals and tunneling energy, respectively. Therefore, the stability of the quantum phases is related to different correlation mechanisms, depending on the field direction. Comparison of exact diagonalization results with simple models allows to identify the specific role of correlations.

cond-mat.mes-hall

Full configuration interaction approach to the few-electron problem in artificial atoms

We present a new high-performance configuration interaction code optimally designed for the calculation of the lowest energy eigenstates of a few electrons in semiconductor quantum dots (also called artificial atoms) in the strong interaction regime. The implementation relies on a single-particle representation, but it is independent of the choice of the single-particle basis and, therefore, of the details of the device and configuration of external fields. Assuming no truncation of the Fock space of Slater determinants generated from the chosen single-particle basis, the code may tackle regimes where Coulomb interaction very effectively mixes many determinants. Typical strongly correlated systems lead to very large diagonalization problems; in our implementation, the secular equation is reduced to its minimal rank by exploiting the symmetry of the effective-mass interacting Hamiltonian, including square total spin. The resulting Hamiltonian is diagonalized via parallel implementation of the Lanczos algorithm. The code gives access to both wave functions and energies of first excited states. Excellent code scalability in a parallel environment is demonstrated; accuracy is tested for the case of up to eight electrons confined in a two-dimensional harmonic trap as the density is progressively diluted and correlation becomes dominant. Comparison with previous Quantum Monte Carlo simulations in the Wigner regime demonstrates power and flexibility of the method.

cond-mat.str-el

Collective properties of electrons and holes in coupled quantum dots

We discuss the properties of few electrons and electron-hole pairs confined in coupled semiconductor quantum dots, with emphasis on correlation effects and the role of tunneling. We shall discuss, in particular, exact diagonalization results for biexciton binding energy, electron-hole localization, magnetic-field induced Wigner molecules, and spin ordering.

cond-mat.mes-hall

Spin-Spin Interaction In Artificial Molecules With In-Plane Magnetic Field

We investigate theoretically the spin-spin interaction of two-electrons in vertically coupled QDs as a function of the angle between magnetic field and growth axis. Our numerical approach is based on a real-space description of single-particle states in realistic samples and exact diagonalization of carrier-carrier Coulomb interaction. In particular, the effect of the in-plane field component on tunneling and, therefore, spin-spin interaction will be discussed; the singlet-triplet phase diagram as a function of the field strength and direction is drawn.

cond-mat.mes-hall

Competing mechanisms for singlet-triplet transition in artificial molecules

We study the magnetic field induced singlet/triplet transition for two electrons in vertically coupled quantum dots by exact diagonalization of the Coulomb interaction. We identify the different mechanisms occurring in the transition, involving either in-plane correlations or localization in opposite dots, depending on the field direction. Therefore, both spin and orbital degrees of freedom can be manipulated by field strength and direction. The phase diagram of realistic devices is determined.

cond-mat.mes-hall