arXiv subjects

Dennis Lin

Publications and source records attributed to Dennis Lin.

6 recordsLinked to original sources

arXiv2026

Process-Technology Co-optimization for 2D-FETs

We present the first experimental machine learning (ML)-enabled Process-Technology Co-Optimization (PTCO) framework for optimizing 2D transition metal dichalcogenide (TMD) FET fabrication directly from statistically meaningful experimental data rather than pure simulation data. We first introduce a transition voltage metric, VTrans, to quantify the gate voltage required for off-to-on switching and reveal its direct correlation with subthreshold swing (SS), highlighting an overlooked switching characteristic that governs both off-state and on-state performance. By integrating automated metric extraction, multi-objective recipe ranking, and predictive modeling, our framework uncovers hidden process-performance correlations and predicts the performance of unexplored fabrication recipes from limited experimental data. Experimental validation shows close agreement with ML predictions, thus demonstrating the framework's ability to efficiently guide gate stack optimization through iterative experimental feedback.

cond-mat.mes-hall↗

arXiv2026

Seed Layer Engineering for Effective Charge Transfer Doping of MoS$_2$ Transistors

Integrating two-dimensional semiconductors such as MoS$_2$ with dielectric materials remains a central challenge for their use in future logic technologies. While seed layers are typically introduced to promote dielectric nucleation and adhesion, we show that they also critically govern charge-transfer doping and, in turn, transistor performance. Back-gated monolayer MoS$_2$ transistors passivated on their top-surface with a Ta-seed/HfO$_x$ dielectric stack were fabricated and characterized electrically and physically using Raman, photoluminescence, and X-ray photoelectron spectroscopies. Threshold voltage and on-current varied strongly with Ta-seed thickness and deposition conditions, and these changes correlated with signatures observed across all spectroscopic probes. The results reveal that the seed layer both introduces disorder into the MoS$_2$ channel and modifies the interfacial charge environment controlling charge transfer between HfO$_x$ and MoS$_2$. Optical spectroscopy shows that on-current tracks seed-induced disorder, whereas X-ray photoelectron spectroscopy indicates that threshold voltage correlates with shifts in the local electrostatic environment associated with interfacial charge transfer. Better performance was obtained with ultrathin 0.2 nm Ta seed layers deposited under oxygen-poor conditions, which limit deposition-induced damage while facilitating charge transfer. These findings identify seed-layer engineering as a key strategy for controlling disorder and interfacial doping in MoS$_2$ devices and establish multimodal spectroscopy as a practical during-fabrication approach for process development and monitoring.

cond-mat.mtrl-sci↗

arXiv2025

How to Identify Suitable Gate Dielectrics for Transistors based on Two-Dimensional Semiconductors

The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing contact resistance, identifying good gate dielectrics is a fundamental challenge, as the dielectric/channel interface dramatically impacts virtually all performance parameters. While several promising gate dielectrics have recently been reported, the evaluation of their quality and suitability is often fragmentary and focused on selected important performance metrics of the gate stack, such as the capacitive gate control, leakage currents, reliability, and ease of fabrication and integration. However, identifying a suitable gate stack is a complex problem that has not yet been approached systematically. In this perspective, we aim to formulate general criteria for good gate dielectrics.

physics.app-ph↗

arXiv2025

Subthreshold Swing Behavior in Amorphous Indium-Gallium-Zinc-Oxide Transistors from Room to Cryogenic Temperatures

While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive analysis of the SS in thin-film transistors with an amorphous indium gallium zinc oxide (IGZO) channel at temperatures from 300 K down to 4 K is presented. Main observations include: 1) At room temperature (300 K), the devices exhibit a SS of 61 mV/dec, and a low interface trap density (<1011 cm-2), among the best reported values for IGZO devices. 2) A SS saturation around 40 mV/dec is observed between 200 K and 100 K. It is well explained by the electron transport via band tail states with exponential decay (Wt) of 13 meV. 3) At deep-cryogenic temperature, SS increase significantly exceeding 200 mV/dec at 4 K. Such high SS values are actually limited by the measurement current range, confirmed by Id-Vg simulations based on the variable range hopping (VRH) model. This work not only elucidates the SS behavior in amorphous IGZO devices but also provides a deep understanding of the physical mechanisms of electron transport in amorphous semiconductors.

cond-mat.mtrl-sci↗

arXiv2025

The impact of process steps on nearly ideal subthreshold slope in 300-mm compatible InGaZnO TFT

While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy distribution of traps inferred from temperature-dependent (T = 4 K - 300 K) and multi-frequency (f = 1 kHz - 100 kHz) admittance measurements, reveals a much higher trap density in TG devices. By analyzing the impact of each process step and conducting forming gas anneal (FGA) experiments, we reveal the role of hydrogen in the deterioration of the SS in the IGZO-based transistors.

physics.app-ph↗

arXiv2017

Parasitic Bipolar Leakage in III-V FETs: Impact of Substrate Architecture

InGaAs-based Gate-all-Around (GAA) FETs with moderate to high In content are shown experimentally and theoretically to be unsuitable for low-leakage advanced CMOS nodes. The primary cause for this is the large leakage penalty induced by the Parasitic Bipolar Effect (PBE), which is seen to be particularly difficult to remedy in GAA architectures. Experimental evidence of PBE in In70Ga30As GAA FETs is demonstrated, along with a simulation-based analysis of the PBE behavior. The impact of PBE is investigated by simulation for alternative device architectures, such as bulk FinFETs and FinFETs-on-insulator. PBE is found to be non-negligible in all standard InGaAs FET designs. Practical PBE metrics are introduced and the design of a substrate architecture for PBE suppression is elucidated. Finally, it is concluded that the GAA architecture is not suitable for low-leakage InGaAs FETs; a bulk FinFET is better suited for the role.

physics.app-ph↗