arXiv subjects

Denis Dyck

Publications and source records attributed to Denis Dyck.

3 recordsLinked to original sources

arXiv2021

Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems

We present a detailed analysis of harmonic longitudinal and Hall voltage measurements for in-plane magnetized Pt/Co/Ta and Ta/Co/Pt trilayers in reference to Pt/Co and Ta/Co bilayers. Enhancement of spin-orbit torques (SOTs) and unidirectional spin Hall magnetoresistance (USMR) is achieved by introducing the second heavy metal (HM) with the opposite sign of the spin Hall angle. The extracted SOT efficiencies are larger for the trilayers as compared to the bilayers, confirming the enhanced values reported for the trilayers with perpendicularly magnetized Co. The maximum effective spin Hall angle found for the Pt/Co/Ta trilayer reaches $θ_{SH}$ = 20%. The USMR of the trilayer yields up to 27% higher effect as for the respective bilayers with the largest effective USMR amplitude of -0.32 $\times$ 10$^{-5}$ for the Pt/Co/Ta trilayer at a charge current density of 10$^{7}$ A/cm$^2$.

cond-mat.mes-hall↗

arXiv2018

Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias

We investigate the dependence of magnetic properties on the post-annealing temperature/time, the thickness of soft ferromagnetic electrode and Ta dusting layer in the pinned electrode as well as their correlation with the tunnel magnetoresistance ratio, in a series of perpendicular magnetic tunnel junctions of materials sequence Ta/Pd/IrMn/CoFe/Ta$(\textit{x})$/CoFeB/MgO$(\textit{y})$/CoFeB$(\textit{z})$/Ta/Pd. We obtain a large perpendicular exchange bias of 79.6$\,$kA/m for $x=0.3\,$nm. For stacks with $z=1.05\,$nm, the magnetic properties of the soft electrode resemble the characteristics of superparamagnetism. For stacks with $x=0.4\,$nm, $y=2\,$nm, and $z=1.20\,$nm, the exchange bias presents a significant decrease at post annealing temperature $T_\textrm{ann}=330\,^{\circ}$C for 60 min, while the interlayer exchange coupling and the saturation magnetization per unit area sharply decay at $T_\textrm{ann}=340\,^{\circ}$C for 60 min. Simultaneously, the tunnel magnetoresistance ratio shows a peak of $65.5\%$ after being annealed at $T_\textrm{ann}=300\,^{\circ}$C for 60 min, with a significant reduction down to $10\%$ for higher annealing temperatures ($T_\textrm{ann}\geq330\,^{\circ}$C) and down to $14\%$ for longer annealing times ($T_\textrm{ann}=300\,^{\circ}$C for 90 min). We attribute the large decrease of tunnel magnetoresistance ratio to the loss of exchange bias in the pinned electrode.

cond-mat.mtrl-sci↗

arXiv2017

Proximity-induced superconductivity and quantum interference in topological crystalline insulator SnTe thin film devices

Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the helical spin-polarization of these surface states, the proximity of topological crystalline matter to a nearby superconductor is predicted to induce unconventional superconductivity and thus to host Majorana physics. We report on the preparation and characterization of Nb-based superconducting quantum interference devices patterned on top of topological crystalline insulator SnTe thin films. The SnTe films show weak antilocalization and the weak links of the SQUID fully-gapped proximity induced superconductivity. Both properties give a coinciding coherence length of 120 nm. The SQUID oscillations induced by a magnetic field show 2$π$ periodicity, possibly dominated by the bulk conductivity.

cond-mat.mes-hall↗