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Defa Liu

Publications and source records attributed to Defa Liu.

At least 19 recordsLinked to original sources

CeCo$_2$P$_2$: a unique Co-antiferromagnetic topological heavy-fermion system with $P\cdot T$-protected Kondo effect and nodal-line excitations

Based on high-throughput screening and experimental data, we find that CeCo$_2$P$_2$ is unique in heavy-fermion materials: it has a Kondo effect at a high temperature which is nonetheless below a Co-antiferromagnetic ordering temperature. This begs the question: how is the Kondo singlet formed? \emph{All} other magnetic Kondo materials do not first form magnetism on the atoms whose electrons are supposed to screen the local moments. We theoretically explain these observations and show the multifaceted uniqueness of CeCo$_2$P$_2$: a playground for Kondo, magnetism, flat band, and topological physics. At high temperatures, the itinerant Co $c$ electrons of the system form non-atomic bands with a narrow bandwidth, leading to a high antiferromagnetic transition temperature. We show that the quantum geometry of the bands promotes in-plane ferromagnetism, while the weak dispersion along the $z$ direction facilitates out-of-plane antiferromagnetism. At low temperatures, we uncover a novel phase that manifests the coexistence of Co-antiferromagnetism and the Kondo effect, linked to the $P\cdot T$-protected Kramers' doublets and the filling-enforced metallic nature of $c$ electrons in the antiferromagnetic phase. Subsequently, the emergence of the Kondo effect, in cooperation with glide-mirror-$z$ symmetry, creates nodal-line excitation near the Fermi energy. Our results emphasize the importance of lattice symmetry and quantum geometry, Kondo physics, and magnetism in the understanding of the correlation physics of this unique compound. We also test our theory on the structurally similar compound LaCo$_2$P$_2$ and show how we are able to understand its vastly different phase diagram.

cond-mat.str-el

Massive 1D Dirac Line, Solitons and Reversible Manipulation on the Surface of a Prototype Obstructed Atomic Insulator, Silicon

Topologically trivial insulators can be classified into atomic insulators (AIs) and obstructed atomic insulators (OAIs) depending on whether the Wannier charge centers are localized or not at spatial positions occupied by atoms. An OAI can possess unusual properties such as surface states along certain crystalline surfaces, which advantageously appear in materials with much larger bulk energy gap than topological insulators, making them more attractive for potential applications. In this work, we show that a well-known crystal, silicon (Si) is a model OAI, which naturally explains some of Si's unusual properties such as its famous (111) surface states. On this surface, using angle resolved photoemission spectroscopy (ARPES), we reveal sharp quasi-1D massive Dirac line dispersions; we also observe, using scanning tunneling microscopy/spectroscopy (STM/STS), topological solitons at the interface of the two atomic chains. Remarkably, we show that the different chain domains can be reversibly switched at the nanometer scale, suggesting the application potential in ultra-high density storage devices.

cond-mat.mes-hall

Origin of the Electronic Structure in Single-Layer FeSe/SrTiO3 Films

The accurate theoretical description of the underlying electronic structures is essential for understanding the superconducting mechanism of iron-based superconductors. Compared to bulk FeSe, the superconducting single-layer FeSe/SrTiO3 films exhibit a distinct electronic structure consisting of only electron Fermi pockets, due to the formation of a new band gap at the Brillouin zone (BZ) corners and an indirect band gap between the BZ center and corners. Although intensive studies have been carried out, the origin of such a distinct electronic structure and its connection to bulk FeSe remain unclear. Here we report a systematic study on the temperature evolution of the electronic structure in single-layer FeSe/SrTiO3 films by angle-resolved photoemission spectroscopy. A temperature-induced electronic phase transition was clearly observed at 200 K, above which the electronic structure of single-layer FeSe/SrTiO3 films restored to that of bulk FeSe, characterized by the closing of the new band gap and the vanishing of the indirect band gap. Moreover, the interfacial charge transfer effect induced band shift of ~ 60 meV was determined for the first time. These observations not only show the first direct evidence that the electronic structure of single-layer FeSe/SrTiO3 films originates from bulk FeSe through a combined effect of an electronic phase transition and an interfacial charge transfer, but also provide a quantitative basis for theoretical models in describing the electronic structure and understanding the superconducting mechanism in single-layer FeSe/SrTiO3 films.

cond-mat.supr-con

Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5

Materials with transition metals in triangular lattices are of great interest for their potential combination of strong correlation, exotic magnetism and electronic topology. Kagome nets are of particular importance since the discovery of geometrically frustrated magnetism and topological band structures in crystals like Herbertsmithite and Fe3Sn2, respectively. KV3Sb5 was discovered to be a layered topological metal with a Kagome net of vanadium. Here, we fabricated Josephson Junctions (JJ) of K1-xV3Sb5 and induced superconductivity over long junction lengths. Through magnetoresistance and current vs. phase measurements, we observed magnetic field sweeping direction dependent magnetoresistance, and an anisotropic interference pattern with a Fraunhofer pattern for in-plane magnetic field, but a suppression of critical current for out-of-plane magnetic field. These results indicate an anisotropic internal magnetic field in K1-xV3Sb5 which influences the superconducting coupling in the junction, possibly giving rise to spin-triplet superconductivity. In addition, the observation of long-lived fast oscillations shows evidence of spatially localized conducting channels arising from edge states. These observations pave the way for studying unconventional superconductivity and Josephson device based on Kagome metals with electron correlation and topology.

cond-mat.supr-con

Competing energy scales in topological superconducting heterostructures

Artificially engineered topological superconductivity has emerged as a viable route to create Majorana modes, exotic quasiparticles which have raised great expectations for storing and manipulating information in topological quantum computational schemes. The essential ingredients for their realization are spin non-degenerate metallic states proximitized to an s-wave superconductor. In this context, proximity-induced superconductivity in materials with a sizable spin-orbit coupling has been heavily investigated in recent years. Although there is convincing evidence that superconductivity may indeed be induced, it has been difficult to elucidate its topological nature. In this work, we systematically engineer an artificial topological superconductor by progressively introducing superconductivity (Nb) into metals with strong spin-orbital coupling (Pt) and 3D topological surface states (Bi2Te3). Through a longitudinal study of the character of superconducting vortices within s-wave superconducting Nb and proximity-coupled Nb/Pt and Nb/Bi2Te3, we detect the emergence of a zero-bias peak that is directly linked to the presence of topological surface states. Supported by a detailed theoretical model, our results are rationalized in terms of competing energy trends which are found to impose an upper limit to the size of the minigap separating Majorana and trivial modes, its size being ultimately linked to fundamental materials properties.

cond-mat.supr-con

Anomalous, anomalous Hall effect in the layered, Kagome, Dirac semimetal KV$_3$Sb$_5$

The electronic anomalous Hall effect (AHE), where charge carriers acquire a velocity component orthogonal to an applied electric field, is one of the most fundamental and widely studied phenomena in physics. There are several different AHE mechanisms known, and material examples are highly sought after, however in the highly conductive (skew scattering) regime the focus has centered around ferromagnetic metals. Here we report the observation of a giant extrinsic AHE in KV$_3$Sb$_5$, an exfoliable, Dirac semimetal with a Kagome layer of Vanadium atoms. Although there has been no reports of magnetic ordering down to 0.25 K, the anomalous Hall conductivity (AHC) reaches $\approx$ 15,507 $\Omega^{-1}$cm$^{-1}$ with an anomalous Hall ratio (AHR) of $\approx$ 1.8$ \%$; an order of magnitude larger than Fe. Defying expectations from skew scattering theory, KV$_3$Sb$_5$ shows an enhanced skew scattering effect that scales quadratically, not linearly, with the longitudinal conductivity ($\sigma_{xx}$), opening the possibility of reaching an anomalous Hall angle (AHA) of 90$^{\circ}$ in metals; an effect thought reserved for quantum anomalous Hall insulators. This observation raises fundamental questions about the AHE and opens a new frontier for AHE (and correspondingly SHE) exploration, stimulating investigation in a new direction of materials, including metallic geometrically frustrated magnets, spin-liquid candidates, and cluster magnets.

cond-mat.mtrl-sci

Evidence for an Additional Symmetry Breaking from Direct Observation of Band Splitting in the Nematic State of FeSe Superconductor

The iron-based superconductor FeSe has attracted much recent attention because of its simple crystal structure, distinct electronic structure and rich physics exhibited by itself and its derivatives. Determination of its intrinsic electronic structure is crucial to understand its physical properties and superconductivity mechanism. Both theoretical and experimental studies so far have provided a picture that FeSe consists of one hole-like Fermi surface around the Brillouin zone center in its nematic state. Here we report direct observation of two hole-like Fermi surface sheets around the Brillouin zone center, and the splitting of the associated bands, in the nematic state of FeSe by taking high resolution laser-based angle-resolved photoemission measurements. These results indicate that, in addition to nematic order and spin-orbit coupling, there is an additional order in FeSe that breaks either inversion or time reversal symmetries. The new Fermi surface topology asks for reexamination of the existing theoretical and experimental understanding of FeSe and stimulates further efforts to identify the origin of the hidden order in its nematic state.

cond-mat.supr-con

Towards Weyltronics: Realization of epitaxial NbP and TaP Weyl Semimetal thin films

Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in thin film devices. While WSMs were established in the monopnictide compound family several years ago, the growth of thin films has remained a challenge. Here, we report the growth of epitaxial thin films of NbP and TaP by means of molecular beam epitaxy. Single crystalline films are grown on MgO (001) substrates using thin Nb (Ta) buffer layers, and are found to be tensile strained (1%) and with slightly P-rich stoichiometry with respect to the bulk crystals. The resulting electronic structure exhibits topological surface states characteristic of a P-terminated surface and linear dispersion bands in agreement with the calculated band structure, and a Fermi-level shift of -0.2 eV with respect to the Weyl points. Consequently, the electronic transport is dominated by both holes and electrons with carrier mobilities close to 10^3 cm2/Vs at room-temperature. The growth of epitaxial thin films opens up the use of strain and controlled doping to access and tune the electronic structure of Weyl Semimetals on demand, paving the way for the rational design and fabrication of electronic devices ruled by topology.

cond-mat.mes-hall

Orbital Origin of Extremely Anisotropic Superconducting Gap in Nematic Phase of FeSe Superconductor

The iron-based superconductors are characterized by multiple-orbital physics where all the five Fe 3$d$ orbitals get involved. The multiple-orbital nature gives rise to various novel phenomena like orbital-selective Mott transition, nematicity and orbital fluctuation that provide a new route for realizing superconductivity. The complexity of multiple-orbital also asks to disentangle the relationship between orbital, spin and nematicity, and to identify dominant orbital ingredients that dictate superconductivity. The bulk FeSe superconductor provides an ideal platform to address these issues because of its simple crystal structure and unique coexistence of superconductivity and nematicity. However, the orbital nature of the low energy electronic excitations and its relation to the superconducting gap remain controversial. Here we report direct observation of highly anisotropic Fermi surface and extremely anisotropic superconducting gap in the nematic state of FeSe superconductor by high resolution laser-based angle-resolved photoemission measurements. We find that the low energy excitations of the entire hole pocket at the Brillouin zone center are dominated by the single $d_{xz}$ orbital. The superconducting gap exhibits an anti-correlation relation with the $d_{xz}$ spectral weight near the Fermi level, i.e., the gap size minimum (maximum) corresponds to the maximum (minimum) of the $d_{xz}$ spectral weight along the Fermi surface. These observations provide new insights in understanding the orbital origin of the extremely anisotropic superconducting gap in FeSe superconductor and the relation between nematicity and superconductivity in the iron-based superconductors.

cond-mat.supr-con

Giant anomalous Hall effect in a ferromagnetic Kagome-lattice semimetal

Magnetic Weyl semimetals with broken time-reversal symmetry are expected to generate strong intrinsic anomalous Hall effects, due to their large Berry curvature. Here, we report a magnetic Weyl semimetal candidate Co3Sn2S2 with a quasi-two-dimensional crystal structure consisting of stacked Kagome lattices. This lattice provides an excellent platform for hosting exotic quantum topological states. We observe a negative magnetoresistance that is consistent with the chiral anomaly expected from the presence of Weyl fermions close to the Fermi level. The anomalous Hall conductivity is robust against both increased temperature and charge conductivity, which corroborates the intrinsic Berry-curvature mechanism in momentum space. Owing to the low carrier density in this material and the significantly enhanced Berry curvature from its band structure, the anomalous Hall conductivity and the anomalous Hall angle simultaneously reach 1130 S cm-1 and 20%, respectively, an order of magnitude larger than typical magnetic systems. Combining the Kagome-lattice structure and the long-range out-of-plane ferromagnetic order of Co3Sn2S2, we expect that this material is an excellent candidate for observation of the quantum anomalous Hall state in the two-dimensional limit.

cond-mat.mtrl-sci

Evidence of Electron-Hole Imbalance in WTe2 from High-Resolution Angle-Resolved Photoemission Spectroscopy

WTe2 has attracted a great deal of attention because it exhibits extremely large and nonsaturating magnetoresistance. The underlying origin of such a giant magnetoresistance is still under debate. Utilizing laser-based angle-resolved photoemission spectroscopy with high energy and momentum resolutions, we reveal the complete electronic structure of WTe2. This makes it possible to determine accurately the electron and hole concentrations and their temperature dependence. We find that, with increasing the temperature, the overall electron concentration increases while the total hole concentration decreases. It indicates that the electron-hole compensation, if it exists, can only occur in a narrow temperature range, and in most of the temperature range there is an electron-hole imbalance. Our results are not consistent with the perfect electron-hole compensation picture that is commonly considered to be the cause of the unusual magnetoresistance in WTe2. We identified a flat band near the Brillouin zone center that is close to the Fermi level and exhibits a pronounced temperature dependence. Such a flat band can play an important role in dictating the transport properties of WTe2. Our results provide new insight on understanding the origin of the unusual magnetoresistance in WTe2.

cond-mat.mtrl-sci

Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2

Quantum topological materials, exemplified by topological insulators, three-dimensional Dirac semimetals and Weyl semimetals, have attracted much attention recently because of their unique electronic structure and physical properties. Very lately it is proposed that the three-dimensional Weyl semimetals can be further classified into two types. In the type I Weyl semimetals, a topologically protected linear crossing of two bands, i.e., a Weyl point, occurs at the Fermi level resulting in a point-like Fermi surface. In the type II Weyl semimetals, the Weyl point emerges from a contact of an electron and a hole pocket at the boundary resulting in a highly tilted Weyl cone. In type II Weyl semimetals, the Lorentz invariance is violated and a fundamentally new kind of Weyl Fermions is produced that leads to new physical properties. WTe2 is interesting because it exhibits anomalously large magnetoresistance. It has ignited a new excitement because it is proposed to be the first candidate of realizing type II Weyl Fermions. Here we report our angle-resolved photoemission (ARPES) evidence on identifying the type II Weyl Fermion state in WTe2. By utilizing our latest generation laser-based ARPES system with superior energy and momentum resolutions, we have revealed a full picture on the electronic structure of WTe2. Clear surface state has been identified and its connection with the bulk electronic states in the momentum and energy space shows a good agreement with the calculated band structures with the type II Weyl states. Our results provide spectroscopic evidence on the observation of type II Weyl states in WTe2. It has laid a foundation for further exploration of novel phenomena and physical properties in the type II Weyl semimetals.

cond-mat.mes-hall

Electronic Evidence for Type II Weyl Semimetal State in MoTe2

Topological quantum materials, including topological insulators and superconductors, Dirac semimetals and Weyl semimetals, have attracted much attention recently for their unique electronic structure, spin texture and physical properties. Very lately, a new type of Weyl semimetals has been proposed where the Weyl Fermions emerge at the boundary between electron and hole pockets in a new phase of matter, which is distinct from the standard type I Weyl semimetals with a point-like Fermi surface. The Weyl cone in this type II semimetals is strongly tilted and the related Fermi surface undergos a Lifshitz transition, giving rise to a new kind of chiral anomaly and other new physics. MoTe2 is proposed to be a candidate of a type II Weyl semimetal; the sensitivity of its topological state to lattice constants and correlation also makes it an ideal platform to explore possible topological phase transitions. By performing laser-based angle-resolved photoemission (ARPES) measurements with unprecedentedly high resolution, we have uncovered electronic evidence of type II semimetal state in MoTe2. We have established a full picture of the bulk electronic states and surface state for MoTe2 that are consistent with the band structure calculations. A single branch of surface state is identified that connects bulk hole pockets and bulk electron pockets. Detailed temperature-dependent ARPES measurements show high intensity spot-like features that is ~40 meV above the Fermi level and is close to the momentum space consistent with the theoretical expectation of the type II Weyl points. Our results constitute electronic evidence on the nature of the Weyl semimetal state that favors the presence of two sets of type II Weyl points in MoTe2.

cond-mat.mtrl-sci

Electronic Structure of Transition Metal Dichalcogenides PdTe2 and Cu0.05PdTe2 Superconductors Obtained by Angle-Resolved Photoemission Spectroscopy

The layered transition metal chalcogenides have been a fertile land in solid state physics for many decades. Various MX2-type transition metal dichalcogenides, such as WTe2, IrTe2, and MoS2, have triggered great attention recently, either for the discovery of novel phenomena or some extreme or exotic physical properties, or for their potential applications. PdTe2 is a superconductor in the class of transition metal dichalcogenides, and superconductivity is enhanced in its Cu-intercalated form, Cu0.05PdTe2. It is important to study the electronic structures of PdTe2 and its intercalated form in order to explore for new phenomena and physical properties and understand the related superconductivity enhancement mechanism. Here we report systematic high resolution angle-resolved photoemission (ARPES) studies on PdTe2 and Cu0.05$PdTe2 single crystals, combined with the band structure calculations. We present for the first time in detail the complex multi-band Fermi surface topology and densely-arranged band structure of these compounds. By carefully examining the electronic structures of the two systems, we find that Cu-intercalation in PdTe2 results in electron-doping, which causes the band structure to shift downwards by nearly 16 meV in Cu0.05PdTe2. Our results lay a foundation for further exploration and investigation on PdTe2 and related superconductors.

cond-mat.supr-con

Common Electronic Origin of Superconductivity in (Li,Fe)OHFeSe Bulk Superconductor and Single-Layer FeSe/SrTiO3 Films

The mechanism of high temperature superconductivity in the iron-based superconductors remains an outstanding issue in condensed matter physics. The electronic structure, in particular the Fermi surface topology, is considered to play an essential role in dictating the superconductivity. Recent revelation of distinct electronic structure and possible high temperature superconductivity with a transition temperature Tc above 65 K in the single-layer FeSe films grown on the SrTiO3 substrate provides key information on the roles of Fermi surface topology and interface in inducing or enhancing superconductivity. Here we report high resolution angle-resolved photoemission measurement on the electronic structure and superconducting gap of a novel FeSe-based superconductor, (Li0.84Fe0.16)OHFe0.98Se, with a Tc at 41 K. We find that this single-phase bulk superconductor shows remarkably similar electronic behaviors to that of the superconducting single-layer FeSe/SrTiO3 film in terms of Fermi surface topology, band structure and nearly isotropic superconducting gap without nodes. These observations provide significant insights in understanding high temperature superconductivity in the single-layer FeSe/SrTiO3 film in particular, and the mechanism of superconductivity in the iron-based superconductors in general.

cond-mat.supr-con

Electronic Structure and Superconductivity of FeSe-Related Superconductors

The FeSe superconductor and its related systems have attracted much attention in the iron-based superconductors owing to their simple crystal structure and peculiar electronic and physical properties. The bulk FeSe superconductor has a superconducting transition temperature (Tc) of ~8 K; it can be dramatically enhanced to 37 K at high pressure. On the other hand, its cousin system, FeTe, possesses a unique antiferromagnetic ground state but is non-superconducting. Substitution of Se by Te in the FeSe superconductor results in an enhancement of Tc up to 14.5 K and superconductivity can persist over a large composition range in the Fe(Se,Te) system. Intercalation of the FeSe superconductor leads to the discovery of the AxFe2-ySe2 (A=K, Cs and Tl) system that exhibits a Tc higher than 30 K and a unique electronic structure of the superconducting phase. The latest report of possible high temperature superconductivity in the single-layer FeSe/SrTiO3 films with a Tc above 65 K has generated much excitement in the community. This pioneering work opens a door for interface superconductivity to explore for high Tc superconductors. The distinct electronic structure and superconducting gap, layer-dependent behavior and insulator-superconductor transition of the FeSe/SrTiO3 films provide critical information in understanding the superconductivity mechanism of the iron-based superconductors. In this paper, we present a brief review on the investigation of the electronic structure and superconductivity of the FeSe superconductor and related systems, with a particular focus on the FeSe films.

cond-mat.supr-con

Direct Evidence of Interaction-Induced Dirac Cones in Monolayer Silicene/Ag(111) System

Silicene, analogous to graphene, is a one-atom-thick two-dimensional crystal of silicon which is expected to share many of the remarkable properties of graphene. The buckled honeycomb structure of silicene, along with its enhanced spin-orbit coupling, endows silicene with considerable advantages over graphene in that the spin-split states in silicene are tunable with external fields. Although the low-energy Dirac cone states lie at the heart of all novel quantum phenomena in a pristine sheet of silicene, the question of whether or not these key states can survive when silicene is grown or supported on a substrate remains hotly debated. Here we report our direct observation of Dirac cones in monolayer silicene grown on a Ag(111) substrate. By performing angle-resolved photoemission measurements on silicene(3x3)/Ag(111), we reveal the presence of six pairs of Dirac cones on the edges of the first Brillouin zone of Ag(111), other than expected six Dirac cones at the K points of the primary silicene(1x1) Brillouin zone. Our result shows clearly that the unusual Dirac cone structure originates not from the pristine silicene alone but from the combined effect of silicene(3x3) and the Ag(111) substrate. This study identifies the first case of a new type of Dirac Fermion generated through the interaction of two different constituents. Our observation of Dirac cones in silicene/Ag(111) opens a new materials platform for investigating unusual quantum phenomena and novel applications based on two-dimensional silicon systems.

cond-mat.mtrl-sci

Dichotomy of Electronic Structure and Superconductivity between Single-Layer and Double-Layer FeSe/SrTiO3 Films

The latest discovery of possible high temperature superconductivity in the single-layer FeSe film grown on a SrTiO3 substrate, together with the observation of its unique electronic structure and nodeless superconducting gap, has generated much attention. Initial work also found that, while the single-layer FeSe/SrTiO3 film exhibits a clear signature of superconductivity, the double-layer FeSe/SrTiO3 film shows an insulating behavior. Such a dramatic difference between the single-layer and double-layer FeSe/SrTiO3 films is surprising and the underlying origin remains unclear. Here we report our comparative study between the single-layer and double-layer FeSe/SrTiO3 films by performing a systematic angle-resolved photoemission study on the samples annealed in vacuum. We find that, like the single-layer FeSe/SrTiO3 film, the as-prepared double-layer FeSe/SrTiO3 film is insulating and possibly magnetic, thus establishing a universal existence of the magnetic phase in the FeSe/SrTiO3 films. In particular, the double-layer FeSe/SrTiO3 film shows a quite different doping behavior from the single-layer film in that it is hard to get doped and remains in the insulating state under an extensive annealing condition. The difference originates from the much reduced doping efficiency in the bottom FeSe layer of the double-layer FeSe/SrTiO3 film from the FeSe-SrTiO3 interface. These observations provide key insights in understanding the origin of superconductivity and the doping mechanism in the FeSe/SrTiO3 films. The property disparity between the single-layer and double-layer FeSe/SrTiO3 films may facilitate to fabricate electronic devices by making superconducting and insulating components on the same substrate under the same condition.

cond-mat.supr-con