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David Snyder

Publications and source records attributed to David Snyder.

22 records · Page 2Linked to original sources

Computational Capabilities of Random Automata Networks for Reservoir Computing

This paper underscores the conjecture that intrinsic computation is maximal in systems at the "edge of chaos." We study the relationship between dynamics and computational capability in Random Boolean Networks (RBN) for Reservoir Computing (RC). RC is a computational paradigm in which a trained readout layer interprets the dynamics of an excitable component (called the reservoir) that is perturbed by external input. The reservoir is often implemented as a homogeneous recurrent neural network, but there has been little investigation into the properties of reservoirs that are discrete and heterogeneous. Random Boolean networks are generic and heterogeneous dynamical systems and here we use them as the reservoir. An RBN is typically a closed system; to use it as a reservoir we extend it with an input layer. As a consequence of perturbation, the RBN does not necessarily fall into an attractor. Computational capability in RC arises from a trade-off between separability and fading memory of inputs. We find the balance of these properties predictive of classification power and optimal at critical connectivity. These results are relevant to the construction of devices which exploit the intrinsic dynamics of complex heterogeneous systems, such as biomolecular substrates.

nlin.AO↗

Epitaxial Graphene Growth on SiC Wafers

An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm SiC wafers that were subsequently fabricated into field effect transistors with fmax of 14 GHz.

cond-mat.mtrl-sci↗

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on thickness uniformity but also on monolayer strain uniformity. Only when both thickness and strain are uniform over a significant fraction (> 40%) of the device active area does the mobility exceed 1000 cm2/V-s. Additionally, we achieve high mobility epitaxial graphene (18,100 cm2/V-s at room temperature) on the C-face of SiC [SiC(000-1)] and show that carrier mobility depends strongly on the graphene layer stacking. These findings provide a means to rapidly estimate carrier mobility and provide a guide to achieve very high mobility in epitaxial graphene. Our results suggest that ultra-high mobilities (>50,000 cm2/V-s) are achievable via the controlled formation of uniform, rotationally faulted epitaxial graphene.

cond-mat.mtrl-sci↗