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David R. Barton

Publications and source records attributed to David R. Barton.

2 recordsLinked to original sources

Hysteresis and trap emission in dc-biased integrated lithium niobate electro-optic modulators

The electro-optic effect is crucially important for low power and efficient tuning of integrated photonic circuits. However, in electro-optic materials such as lithium niobate, dc biasing for an extended duration of time results in the emergence of numerous nonidealities, including hysteresis -- a persistent degradation of the magnitude and linearity of the dc electro-optic response. We show that electro-optic hysteresis can be reversed under both zero-bias and reverse-bias conditions, given sufficient time or reverse voltage and consistent with a defect model of the underlying physics. Specifically, we find that drift phenomena at short time scales can be explained by charge trapping dynamics near the contact junction, and thereby devise an active reset protocol that restores the magnitude of the response and partially restores the drift time scales.

physics.optics

Heterogeneous Transfer of Thin Film BaTiO$_3$ onto Silicon for Device Fabrication

Thin film BaTiO$_3$ has one of the highest known Pockels coefficients (>1200 pm/V), making it an attractive material for use in electro-optic devices. It is advantageous to integrate BaTiO$_3$ on silicon to enable complementary metal-oxide-semiconductor (CMOS) compatible processing. However, synthesis of high-quality BaTiO$_3$ directly on silicon remains a challenge. Here, we synthesize BaTiO$_3$ using hybrid metal-organic molecular beam epitaxy (hMBE) and demonstrate its transfer onto silicon using thermocompression bonding and chemical lift-off. Hybrid metal-organic MBE enables self-regulated synthesis of highly stoichiometric thin films at high growth rates (>100nm/hr). Our transfer method results in millimeter-scale areas of atomically flat, crack-free BaTiO$_3$ making it a potentially scalable method. Finally, we demonstrate the applicability of our process to device fabrication through characterization of lithographically-patterned and etch-transferred sub-micron features.

cond-mat.mtrl-sci