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Dashan Shang

Publications and source records attributed to Dashan Shang.

18 recordsLinked to original sources
arXiv2026

Parameter Efficient Machine Unlearning on Hybrid Resistive Memory based Compute-in-Memory Accelerators

Resistive memory compute-in-memory accelerators provide energy efficient analogue matrix vector multiplication for neural network inference, but frequent reprogramming of analogue weights remains costly because of device variability and iterative write and verify operations. This limitation hinders their use in edge model adaptation, including approximate machine unlearning and continual learning, where model parameters may need to be updated repeatedly in response to data deletion requests or newly arriving tasks. Here we present a co-design approach across hardware and software that maps frozen pretrained weights to analogue resistive memory arrays while placing trainable low rank adaptation branches in SRAM connected digital compute. By using LoRA style parameter efficient updates, the proposed scheme confines adaptation to a small set of digital parameters and avoids repeated reprogramming of the analogue backbone. To our knowledge, this work provides the first experimental demonstration of approximate machine unlearning on a fabricated resistive memory CIM accelerator. We validate the framework on a 180 nm 128x128 1T1R resistive-memory macro for face recognition, and through circuit-accurate simulations for speaker authentication and stylized image generation tasks, owing to the substantial model sizes involved. Compared with a baseline that directly updates analog weights, our hybrid mapping reduces analog training/update cost by up to 148x, on-chip deployment overhead by up to 388x, and inference energy by up to 59x, while preserving competitive task performance. These results show that hybrid analogue-digital LoRA mapping can enable efficient post-deployment adaptation on RM-CIM hardware, although formal machine-unlearning guarantees and large-scale system integration remain open challenges.

cs.ET↗
arXiv2025

When Pipelined In-Memory Accelerators Meet Spiking Direct Feedback Alignment: A Co-Design for Neuromorphic Edge Computing

Spiking Neural Networks (SNNs) are increasingly favored for deployment on resource-constrained edge devices due to their energy-efficient and event-driven processing capabilities. However, training SNNs remains challenging because of the computational intensity of traditional backpropagation algorithms adapted for spike-based systems. In this paper, we propose a novel software-hardware co-design that introduces a hardware-friendly training algorithm, Spiking Direct Feedback Alignment (SDFA) and implement it on a Resistive Random Access Memory (RRAM)-based In-Memory Computing (IMC) architecture, referred to as PipeSDFA, to accelerate SNN training. Software-wise, the computational complexity of SNN training is reduced by the SDFA through the elimination of sequential error propagation. Hardware-wise, a three-level pipelined dataflow is designed based on IMC architecture to parallelize the training process. Experimental results demonstrate that the PipeSDFA training accelerator incurs less than 2% accuracy loss on five datasets compared to baselines, while achieving 1.1X~10.5X and 1.37X~2.1X reductions in training time and energy consumption, respectively compared to PipeLayer.

cs.AR↗
arXiv2024

Topology Optimization of Random Memristors for Input-Aware Dynamic SNN

There is unprecedented development in machine learning, exemplified by recent large language models and world simulators, which are artificial neural networks running on digital computers. However, they still cannot parallel human brains in terms of energy efficiency and the streamlined adaptability to inputs of different difficulties, due to differences in signal representation, optimization, run-time reconfigurability, and hardware architecture. To address these fundamental challenges, we introduce pruning optimization for input-aware dynamic memristive spiking neural network (PRIME). Signal representation-wise, PRIME employs leaky integrate-and-fire neurons to emulate the brain's inherent spiking mechanism. Drawing inspiration from the brain's structural plasticity, PRIME optimizes the topology of a random memristive spiking neural network without expensive memristor conductance fine-tuning. For runtime reconfigurability, inspired by the brain's dynamic adjustment of computational depth, PRIME employs an input-aware dynamic early stop policy to minimize latency during inference, thereby boosting energy efficiency without compromising performance. Architecture-wise, PRIME leverages memristive in-memory computing, mirroring the brain and mitigating the von Neumann bottleneck. We validated our system using a 40 nm 256 Kb memristor-based in-memory computing macro on neuromorphic image classification and image inpainting. Our results demonstrate the classification accuracy and Inception Score are comparable to the software baseline, while achieving maximal 62.50-fold improvements in energy efficiency, and maximal 77.0% computational load savings. The system also exhibits robustness against stochastic synaptic noise of analogue memristors. Our software-hardware co-designed model paves the way to future brain-inspired neuromorphic computing with brain-like energy efficiency and adaptivity.

cs.ET↗
arXiv2024

Dynamic neural network with memristive CIM and CAM for 2D and 3D vision

The brain is dynamic, associative and efficient. It reconfigures by associating the inputs with past experiences, with fused memory and processing. In contrast, AI models are static, unable to associate inputs with past experiences, and run on digital computers with physically separated memory and processing. We propose a hardware-software co-design, a semantic memory-based dynamic neural network (DNN) using memristor. The network associates incoming data with the past experience stored as semantic vectors. The network and the semantic memory are physically implemented on noise-robust ternary memristor-based Computing-In-Memory (CIM) and Content-Addressable Memory (CAM) circuits, respectively. We validate our co-designs, using a 40nm memristor macro, on ResNet and PointNet++ for classifying images and 3D points from the MNIST and ModelNet datasets, which not only achieves accuracy on par with software but also a 48.1% and 15.9% reduction in computational budget. Moreover, it delivers a 77.6% and 93.3% reduction in energy consumption.

cs.AR↗
arXiv2024

Older and Wiser: The Marriage of Device Aging and Intellectual Property Protection of Deep Neural Networks

Deep neural networks (DNNs), such as the widely-used GPT-3 with billions of parameters, are often kept secret due to high training costs and privacy concerns surrounding the data used to train them. Previous approaches to securing DNNs typically require expensive circuit redesign, resulting in additional overheads such as increased area, energy consumption, and latency. To address these issues, we propose a novel hardware-software co-design approach for DNN intellectual property (IP) protection that capitalizes on the inherent aging characteristics of circuits and a novel differential orientation fine-tuning (DOFT) to ensure effective protection. Hardware-wise, we employ random aging to produce authorized chips. This process circumvents the need for chip redesign, thereby eliminating any additional hardware overhead during the inference procedure of DNNs. Moreover, the authorized chips demonstrate a considerable disparity in DNN inference performance when compared to unauthorized chips. Software-wise, we propose a novel DOFT, which allows pre-trained DNNs to maintain their original accuracy on authorized chips with minimal fine-tuning, while the model's performance on unauthorized chips is reduced to random guessing. Extensive experiments on various models, including MLP, VGG, ResNet, Mixer, and SwinTransformer, with lightweight binary and practical multi-bit weights demonstrate that the proposed method achieves effective IP protection, with only 10\% accuracy on unauthorized chips, while preserving nearly the original accuracy on authorized ones.

cs.CR↗
arXiv2024

Continuous-Time Digital Twin with Analogue Memristive Neural Ordinary Differential Equation Solver

Digital twins, the cornerstone of Industry 4.0, replicate real-world entities through computer models, revolutionising fields such as manufacturing management and industrial automation. Recent advances in machine learning provide data-driven methods for developing digital twins using discrete-time data and finite-depth models on digital computers. However, this approach fails to capture the underlying continuous dynamics and struggles with modelling complex system behaviour. Additionally, the architecture of digital computers, with separate storage and processing units, necessitates frequent data transfers and Analogue-Digital (A/D) conversion, thereby significantly increasing both time and energy costs. Here, we introduce a memristive neural ordinary differential equation (ODE) solver for digital twins, which is capable of capturing continuous-time dynamics and facilitates the modelling of complex systems using an infinite-depth model. By integrating storage and computation within analogue memristor arrays, we circumvent the von Neumann bottleneck, thus enhancing both speed and energy efficiency. We experimentally validate our approach by developing a digital twin of the HP memristor, which accurately extrapolates its nonlinear dynamics, achieving a 4.2-fold projected speedup and a 41.4-fold projected decrease in energy consumption compared to state-of-the-art digital hardware, while maintaining an acceptable error margin. Additionally, we demonstrate scalability through experimentally grounded simulations of Lorenz96 dynamics, exhibiting projected performance improvements of 12.6-fold in speed and 189.7-fold in energy efficiency relative to traditional digital approaches. By harnessing the capabilities of fully analogue computing, our breakthrough accelerates the development of digital twins, offering an efficient and rapid solution to meet the demands of Industry 4.0.

cs.AR↗
arXiv2024

Efficient and accurate neural field reconstruction using resistive memory

Human beings construct perception of space by integrating sparse observations into massively interconnected synapses and neurons, offering a superior parallelism and efficiency. Replicating this capability in AI finds wide applications in medical imaging, AR/VR, and embodied AI, where input data is often sparse and computing resources are limited. However, traditional signal reconstruction methods on digital computers face both software and hardware challenges. On the software front, difficulties arise from storage inefficiencies in conventional explicit signal representation. Hardware obstacles include the von Neumann bottleneck, which limits data transfer between the CPU and memory, and the limitations of CMOS circuits in supporting parallel processing. We propose a systematic approach with software-hardware co-optimizations for signal reconstruction from sparse inputs. Software-wise, we employ neural field to implicitly represent signals via neural networks, which is further compressed using low-rank decomposition and structured pruning. Hardware-wise, we design a resistive memory-based computing-in-memory (CIM) platform, featuring a Gaussian Encoder (GE) and an MLP Processing Engine (PE). The GE harnesses the intrinsic stochasticity of resistive memory for efficient input encoding, while the PE achieves precise weight mapping through a Hardware-Aware Quantization (HAQ) circuit. We demonstrate the system's efficacy on a 40nm 256Kb resistive memory-based in-memory computing macro, achieving huge energy efficiency and parallelism improvements without compromising reconstruction quality in tasks like 3D CT sparse reconstruction, novel view synthesis, and novel view synthesis for dynamic scenes. This work advances the AI-driven signal restoration technology and paves the way for future efficient and robust medical AI and 3D vision applications.

cs.ET↗
arXiv2024

Resistive Memory-based Neural Differential Equation Solver for Score-based Diffusion Model

Human brains image complicated scenes when reading a novel. Replicating this imagination is one of the ultimate goals of AI-Generated Content (AIGC). However, current AIGC methods, such as score-based diffusion, are still deficient in terms of rapidity and efficiency. This deficiency is rooted in the difference between the brain and digital computers. Digital computers have physically separated storage and processing units, resulting in frequent data transfers during iterative calculations, incurring large time and energy overheads. This issue is further intensified by the conversion of inherently continuous and analog generation dynamics, which can be formulated by neural differential equations, into discrete and digital operations. Inspired by the brain, we propose a time-continuous and analog in-memory neural differential equation solver for score-based diffusion, employing emerging resistive memory. The integration of storage and computation within resistive memory synapses surmount the von Neumann bottleneck, benefiting the generative speed and energy efficiency. The closed-loop feedback integrator is time-continuous, analog, and compact, physically implementing an infinite-depth neural network. Moreover, the software-hardware co-design is intrinsically robust to analog noise. We experimentally validate our solution with 180 nm resistive memory in-memory computing macros. Demonstrating equivalent generative quality to the software baseline, our system achieved remarkable enhancements in generative speed for both unconditional and conditional generation tasks, by factors of 64.8 and 156.5, respectively. Moreover, it accomplished reductions in energy consumption by factors of 5.2 and 4.1. Our approach heralds a new horizon for hardware solutions in edge computing for generative AI applications.

cs.AR↗
arXiv2023

Random resistive memory-based deep extreme point learning machine for unified visual processing

Visual sensors, including 3D LiDAR, neuromorphic DVS sensors, and conventional frame cameras, are increasingly integrated into edge-side intelligent machines. Realizing intensive multi-sensory data analysis directly on edge intelligent machines is crucial for numerous emerging edge applications, such as augmented and virtual reality and unmanned aerial vehicles, which necessitates unified data representation, unprecedented hardware energy efficiency and rapid model training. However, multi-sensory data are intrinsically heterogeneous, causing significant complexity in the system development for edge-side intelligent machines. In addition, the performance of conventional digital hardware is limited by the physically separated processing and memory units, known as the von Neumann bottleneck, and the physical limit of transistor scaling, which contributes to the slowdown of Moore's law. These limitations are further intensified by the tedious training of models with ever-increasing sizes. We propose a novel hardware-software co-design, random resistive memory-based deep extreme point learning machine (DEPLM), that offers efficient unified point set analysis. We show the system's versatility across various data modalities and two different learning tasks. Compared to a conventional digital hardware-based system, our co-design system achieves huge energy efficiency improvements and training cost reduction when compared to conventional systems. Our random resistive memory-based deep extreme point learning machine may pave the way for energy-efficient and training-friendly edge AI across various data modalities and tasks.

cs.LG↗
arXiv2023

Pruning random resistive memory for optimizing analogue AI

The rapid advancement of artificial intelligence (AI) has been marked by the large language models exhibiting human-like intelligence. However, these models also present unprecedented challenges to energy consumption and environmental sustainability. One promising solution is to revisit analogue computing, a technique that predates digital computing and exploits emerging analogue electronic devices, such as resistive memory, which features in-memory computing, high scalability, and nonvolatility. However, analogue computing still faces the same challenges as before: programming nonidealities and expensive programming due to the underlying devices physics. Here, we report a universal solution, software-hardware co-design using structural plasticity-inspired edge pruning to optimize the topology of a randomly weighted analogue resistive memory neural network. Software-wise, the topology of a randomly weighted neural network is optimized by pruning connections rather than precisely tuning resistive memory weights. Hardware-wise, we reveal the physical origin of the programming stochasticity using transmission electron microscopy, which is leveraged for large-scale and low-cost implementation of an overparameterized random neural network containing high-performance sub-networks. We implemented the co-design on a 40nm 256K resistive memory macro, observing 17.3% and 19.9% accuracy improvements in image and audio classification on FashionMNIST and Spoken digits datasets, as well as 9.8% (2%) improvement in PR (ROC) in image segmentation on DRIVE datasets, respectively. This is accompanied by 82.1%, 51.2%, and 99.8% improvement in energy efficiency thanks to analogue in-memory computing. By embracing the intrinsic stochasticity and in-memory computing, this work may solve the biggest obstacle of analogue computing systems and thus unleash their immense potential for next-generation AI hardware.

cs.ET↗
arXiv2023

Resistive memory-based zero-shot liquid state machine for multimodal event data learning

The human brain is a complex spiking neural network (SNN), capable of learning multimodal signals in a zero-shot manner by generalizing existing knowledge. Remarkably, it maintains minimal power consumption through event-based signal propagation. However, replicating the human brain in neuromorphic hardware presents both hardware and software challenges. Hardware limitations, such as the slowdown of Moore's law and Von Neumann bottleneck, hinder the efficiency of digital computers. Additionally, SNNs are characterized by their software training complexities. To this end, we propose a hardware-software co-design on a 40 nm 256 Kb in-memory computing macro that physically integrates a fixed and random liquid state machine (LSM) SNN encoder with trainable artificial neural network (ANN) projections. We showcase the zero-shot LSM-based learning of multimodal events on the N-MNIST and N-TIDIGITS datasets, including visual and audio data association, as well as neural and visual data alignment for brain-machine interfaces. Our co-design achieves classification accuracy comparable to fully optimized software models, resulting in a 152.83 and 393.07-fold reduction in training costs compared to SOTA contrastive language-image pre-training (CLIP) and Prototypical networks, and a 23.34 and 160-fold improvement in energy efficiency compared to cutting-edge digital hardware, respectively. These proof-of-principle prototypes demonstrate zero-shot multimodal events learning capability for emerging efficient and compact neuromorphic hardware.

cs.ET↗
arXiv2021

Echo state graph neural networks with analogue random resistor arrays

Recent years have witnessed an unprecedented surge of interest, from social networks to drug discovery, in learning representations of graph-structured data. However, graph neural networks, the machine learning models for handling graph-structured data, face significant challenges when running on conventional digital hardware, including von Neumann bottleneck incurred by physically separated memory and processing units, slowdown of Moore's law due to transistor scaling limit, and expensive training cost. Here we present a novel hardware-software co-design, the random resistor array-based echo state graph neural network, which addresses these challenges. The random resistor arrays not only harness low-cost, nanoscale and stackable resistors for highly efficient in-memory computing using simple physical laws, but also leverage the intrinsic stochasticity of dielectric breakdown to implement random projections in hardware for an echo state network that effectively minimizes the training cost thanks to its fixed and random weights. The system demonstrates state-of-the-art performance on both graph classification using the MUTAG and COLLAB datasets and node classification using the CORA dataset, achieving 34.2x, 93.2x, and 570.4x improvement of energy efficiency and 98.27%, 99.46%, and 95.12% reduction of training cost compared to conventional graph learning on digital hardware, respectively, which may pave the way for the next generation AI system for graph learning.

cs.ET↗
arXiv2021

Charge-driven transtive devices via electric field control of magnetism in a helimagnet

Transtor and memtranstor are the fourth basic linear and memory elements, which allows direct coupling of charge (q) to magnetic flux ({\phi}) via linear and non-linear ME effects, respectively. It is found here that large variation of magnetization by electric field is realized in both linear and nonlinear hysteretic styles in a magnetoelectric Y-type hexaferrite Ba0.5Sr1.5Zn2(Fe0.92Al0.08)12O22 single-crystal. Moreover, based on the spin current model, the underlying microscopic mechanisms for generating the two types of linear and nonlinear M vs E curves are understood as E induced changes of cone angle and sign of P respectively, establishing the charge-driven transtor and memtranstor in the Y-type hexaferrite system. This work points to a promising pathway to develop unique circuit functionalities using the magnetoelectric materials.

cond-mat.mtrl-sci↗
arXiv2020

Large-area printing of ferroelectric surface and super-domains for efficient solar water splitting

Surface electronic structures of the photoelectrodes determine the activity and efficiency of the photoelectrochemical water splitting, but the controls of their surface structures and interfacial chemical reactions remain challenging. Here, we use ferroelectric BiFeO3 as a model system to demonstrate an efficient and controllable water splitting reaction by large-area constructing the hydroxyls-bonded surface. The up-shift of band edge positions at this surface enables and enhances the interfacial holes and electrons transfer through the hydroxyl-active-sites, leading to simultaneously enhanced oxygen and hydrogen evolutions. Furthermore, printing of ferroelectric super-domains with microscale checkboard up/down electric fields separates the distribution of reduction/oxidation catalytic sites, enhancing the charge separation and giving rise to an order of magnitude increase of the photocurrent. This large-area printable ferroelectric surface and super-domains offer an alternative platform for controllable and high-efficient photocatalysis.

physics.app-ph↗
arXiv2016

Nonvolatile Multi-level Memory and Boolean Logic Gates Based on a Single Memtranstor

Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that nonvolatile logic gates such as NOR and NAND can be implemented in a single memtranstor made of the Ni/PMN-PT/Ni heterostructure. After applying two sequent voltage pulses (X1, X2) as the logic inputs on the memtranstor, the output magnetoelectric voltage can be positive high (logic "1"), positive low (logic "0"), or negative (logic "0"), depending on the levels of X1 and X2. The underlying physical mechanism is related to the complete or partial reversal of ferroelectric polarization controlled by inputting selective voltage pulses, which determines the magnitude and sign of the magnetoelectric voltage coefficient. The combined functions of both memory and logic could enable the memtranstor as a promising candidate for future computing systems beyond von Neumann architecture.

cs.ET↗
arXiv2016

A multilevel nonvolatile magnetoelectric memory based on memtranstor

The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient ({\alpha}) of multiferroics. Because the states of {\alpha} depends on the relative orientation between magnetization and polarization, one can reach different levels of {\alpha} by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of {\alpha} can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of {\alpha} is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.

cond-mat.mtrl-sci↗
arXiv2016

A non-volatile memory based on nonlinear magnetoelectric effects

The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresis loop. The principle is to utilize the states of the magnetoelectric coefficient, instead of magnetization, electric polarization or resistance, to store binary information. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure clearly demonstrate that the sign of the magnetoelectric coefficient can be repeatedly switched between positive and negative by applying electric fields, confirming the feasibility of this principle. This kind of non-volatile memory has outstanding practical virtues such as simple structure, easy operations in writing and reading, low power, fast speed, and diverse materials available.

cond-mat.mtrl-sci↗
arXiv2015

Towards the Complete Relational Graph of Fundamental Circuit Elements

A complete and harmonized fundamental circuit relational graph with four linear and four memory elements is constructed based on newly defined elements, which provides a guide to developing novel circuit functionalities in the future. In addition to resistor, capacitor and inductor which are defined in terms of a linear relationship between the charge q, the current i, the voltage v, and the magnetic flux, Chua proposed in 1971 the fourth linear circuit element to directly relate magnetic flux and charge. A non-linear resistive device defined in memory i-v relation and dubbed memristor, was later attributed to such an element and has been realized in various material structures. Here we clarify that the memristor is not the true fourth fundamental circuit element but the memory extension to the concept of resistor, in analogy to the extension of memcapacitor to capacitor and meminductor to inductor. Instead, a two-terminal device employing the linear magnetoelectric effects, termed transtor, possesses the function of relating directly flux and charge and should take the position of the fourth linear element. Moreover, its memory extension, termed memtranstor, is proposed and analyzed here.

cond-mat.mes-hall↗