Danylo Mosiiets | arXiv Science

arXiv2026

Growth and morphology of core-shell nanowires incorporating dissimilar hexagonal semiconductors: the case of InAs-ZnTe

Core-shell nanowires incorporating semiconductors from two groups, III-V for the core and II-VI for the shell, have been grown by molecular beam epitaxy in two dedicated chambers connected under ultra-high vacuum, and studied by electron microscopy. During the growth of the shell, the wurtzite structure of the core is replicated in the shell, without any creation of defects. This is true for a wide range of shell thickness, from about one monolayer, up to 25 nm thanks to the good lattice match between the InAs material of the core and the ZnTe material of the shell. While (1 100) m-facets and (11 20) a-facets coexist on the sidewalls of the core, during the growth of the ZnTe shell the size of the m-facets progressively increases at the expense of the a-facets which eventually disappear. A fast growth of the ZnTe shell is observed for the first few monolayers, with a high sticking; this is followed by a slower growth, of the same order of magnitude as observed on a ZnTe core, with a dependence on the nanowire radius which points to the occurrence of mononuclear nucleation

cond-mat.mtrl-sci↗

arXiv2024

Dual-adatom diffusion-limited growth model for compound nanowires: Application to InAs nanowires

We propose a dual-adatom diffusion-limited model for the growth of compound semiconductor nanowires via the vapor-liquid-solid or the vapour-solid-solid mechanisms. The growth is catalyzed either by a liquid or a solid nanoparticle. We validate the model using experimental data from the growth of InAs nanowires catalyzed by a gold nanoparticle in a molecular beam epitaxy reactor. Initially, we determine the parameters (diffusion lengths, flux to the seed, Kelvin effect) that describe the growth of nanowires under an excess of one of the two beams (for instance, group III or group V atoms). The diffusion-limited model calculates the growth rate resulting from the current of atoms reaching the seed. Our dual-adatom diffusion-limited model calculates for a compound semiconductor, the instantaneous growth rate resulting from the smallest current of the two types of atoms at a given time. We apply the model to analyze the length-radius dependence of our InAs nanowires for growth conditions covering the transition from the As-limited to the In-limited regime. Finally, the model also describes the complex dependence of the transition between both regimes on the nanowire radius and length. This approach is generic and can be applied to study the growth of any compound semiconductor nanowires.

cond-mat.mtrl-sci↗