arXiv subjects

Daniela Zahn

Publications and source records attributed to Daniela Zahn.

At least 19 recordsLinked to original sources

arXiv2026

Nanoscale Confinement Enhances Ultrafast Demagnetization

Nanoscale miniaturization has revolutionized the field of spintronics by enabling exponential growth in areal bit density. A similar leap is also expected in device speeds through successfully harnessing femtosecond magnetization dynamics. However, combining this with the miniaturization of realistic devices is challenging. To address this, we studied the effect of dimensional confinement on the femtosecond demagnetization of Fe. By gradually increasing the level of confinement while keeping excitation conditions constant, we found that Fe layers thinner than 10 nm exhibit enlarged demagnetization amplitudes, reaching a $\sim75\%$ increase at 2 nm. By combining ultrafast experiments sensitive to the spins, the charge carriers, and the phonons, we establish that this finite$\text{-}$size effect is magnetic in origin and is not phonon$\text{-}$driven. With the support of ab$\text{-}$initio calculations and atomistic spin dynamics simulations, we identify the enhancement effect as due to local weakening of spin order at the Fe$\text{'}$s interface, which becomes significant upon increased confinement.

cond-mat.mes-hall↗

arXiv2026

Optimizing CMOS-compatible, superconducting titanium nitride resonators: Deposition conditions and structuring processes

We report on the fabrication and characterization of superconducting coplanar waveguide (CPW) resonators based on titanium nitride (TiN) thin films deposited on 200\,mm diameter high-resistivity Si(100) substrates. We systematically investigate how deposition conditions, dry-etch power and in-situ resist strip temperature affect morphology, superconducting properties and dielectric losses. By tuning reactive sputtering conditions, three distinct preferred out-of-plane crystal orientations - (111), (200), and a mix of both are achieved. Our results demonstrate that all films exhibit similar minimal two-level system (TLS) losses, with TiN111 exhibiting the lowest median TLS losses $\tilde{\delta}_\mathrm{TLS}$, and greater robustness against reoxidation. The applied structuring process, in contrast, has a far greater influence on the TLS loss than the crystal orientation of the TiN film and, consequently, the intrinsic material properties of the superconducting layer. The lowest TLS losses for all TiN depositions were achieved with a low power etch and low temperature resist strip. An additional buffered oxide etch (BOE) treatment could remove high-loss interfacial oxides at the metal-air (MA) and substrate-air (SA) interface and recover the etch-induced TLS losses. Consequently, TiN resonators exhibiting $\tilde{\delta}_\mathrm{TLS}$ values as low as $9.67 \times 10^{-7}$ were realized. The corresponding median low-power loss, $\tilde{\delta}_\mathrm{LP}$, amounts to $11.04 \times 10^{-7}$, which translates to an internal quality factor approaching one million. These findings highlight the critical role of process induced oxide formation at the MA and SA interfaces in limiting the performance of TiN resonators and provide a scalable, low-loss process compatible with industry-grade 200\,mm CMOS qubit fabrication workflows.

quant-ph↗

arXiv2026

Surface Optimization of Superconducting Aluminum Resonators for Robust Quantum Device Fabrication

Aluminum (Al) remains the central material for superconducting qubits, and considerable effort has been devoted to optimizing its deposition and patterning for quantum devices. However, post-processing strategies focused on oxide removal of niobium (Nb) and tantalum (Ta) -based resonators using buffered oxide etch (BOE), which can not be used for Al. This challenge becomes particularly relevant for industry-scale fabrication with multi-chip bonding, where delays between sample preparation and cooldown require surface treatments that preserve low dielectric loss during extended exposure to ambient conditions. In this work, we investigate surface modification approaches for Al resonators subjected to a 24-hour delay prior to cryogenic measurement. Passivation using self-limiting oxygen and fluorine chemistries was evaluated utilizing different plasma processes. Remote oxygen plasma treatment reduced dielectric losses, in contrast to direct oxygen plasma. A fluorine-based plasma process was developed that passivated the Al surface for subsequent BOE treatment. However, the fluorine content in the surface resulted in higher loss, identifying fluorine as an unsuitable passivation material for Al resonators. Above all, selective oxide removal using HF (hydrogen fluoride) vapor and phosphoric acid yielded median dielectric losses as low as $\tilde{\delta}_\mathrm{LP} = 5.7 \times 10^{-7}$ ($Q_\mathrm{LP} \approx 1.7\,\mathrm{M}$) with $\tilde{\delta}_\mathrm{TLS} = 3.6 \times 10^{-7}$ ($Q_\mathrm{TLS} \approx 2.8\,\mathrm{M}$) in the single photon regime. Selective oxide removal provides a promising pathway for robust Al-based qubit fabrication, as it preserves low dielectric losses for a 24-hour delay before cooldown.

quant-ph↗

arXiv2025

Stability studies on subtractively-fabricated CMOS-compatible superconducting transmon qubits

Developing fault-tolerant quantum processors with error correction demands large arrays of physical qubits whose key performance metrics (coherence times, control fidelities) must remain within specifications over both short and long timescales. Here we investigated the temporal stability of subtractively fabricated CMOS-compatible superconducting transmon qubits. During a single cooldown and over a period of 95 hours, we monitored several parameters for 8 qubits, including coherence times $T_1$ and $T_2^*$, which exhibit fluctuations originating primarily from the interaction between two-level system (TLS) defects and the host qubit. We also demonstrate that subtractively-fabricated superconducting quantum devices align with the theoretical predictions that higher mean lifetimes $T_1$ correspond to larger fluctuations. To assess long-term stability, we tracked two representative qubits over 10 cooldown cycles spanning more than one year. We observed an average total downward shift in both qubit transition frequencies of approximately 61 MHz within the thermal cycles considered. In contrast, readout resonator frequencies decreased only marginally. Meanwhile, $T_1$ exhibits fluctuations from cycle to cycle, but maintains a stable baseline value.

quant-ph↗

arXiv2025

Wafer-Scale Characterization of Al/AlxOy/Al Josephson Junctions at Room Temperature

Josephson junctions (JJs) are the key element of many devices operating at cryogenic temperatures. Development of time-efficient wafer-scale JJ characterization for process optimization and control of JJ fabrication is essential. Such statistical characterization has to rely on room temperature techniques since cryogenic measurements typically used for JJs are too time consuming and unsuitable for wafer-scale characterization. In this work, we show that from room temperature capacitance and current-voltage measurements, with proper data analysis, we can independently obtain useful parameters of the JJs on wafer-scale, like oxide thickness, tunnel coefficient, and interfacial defect densities. Moreover, based on detailed analysis of current vs voltage characteristics, different charge transport mechanisms across the junctions can be distinguished. We exemplary demonstrate the worth of these methods by studying junctions fabricated on 200 mm wafers with an industrially scale-able concept based on subtractive processing using only CMOS compatible tools. From these studies, we find that our subtractive fabrication approach yields junctions with quite homogeneous average oxide thickness across the full wafers, with a spread of less then 3$\,$%. The analysis also revealed a variation of the tunnel coefficient with oxide thickness, pointing to a stoichiometry gradient across the junctions' oxide width. Moreover, we estimated relatively low interfacial defect densities in the range of 70 - 5000$\,$defects/cm$^2$ for our junctions and established that the density increased with decreasing oxide thickness, indicating that the wet etching process applied in the JJs fabrication for oxide thickness control leads to formation of interfacial trap state

quant-ph↗

arXiv2025

Momentum-Resolved Signatures of Carrier Screening Effects on Electron-Phonon Coupling in MoS$_2$

Electron-phonon coupling is central to many condensed matter phenomena. Harnessing these effects for novel material functionality in materials always involves non-equilibrium electronic states, which in turn alter quasi-free-carrier density and screening. Thus, gaining a fundamental understanding of the interplay of carrier screening and electron-phonon coupling is essential for advancing ultrafast science. Prior works have mainly focused on the impact of carrier screening on electronic structure properties. Here we investigate the non-equilibrium lattice dynamics of MoS2 after a photoinduced Mott transition. The experimental data are closely reproduced by ab-initio ultrafast dynamics simulations. We find that the non-thermal diffuse scattering signals in the vicinity of the Bragg peaks, originating from long-wavelength phonon emission, can only be reproduced upon explicitly accounting for the screening of electron-phonon interaction introduced by the Mott transition. These results indicate the screening influences electron-phonon coupling, leading to a suppression of intravalley phonon-assisted carrier relaxation. Overall, the combined experimental and computational approach introduced here offers new prospects for exploring the influence of screening of the electron-phonon interactions and relaxation pathways in driven solids.

cond-mat.mtrl-sci↗

arXiv2024

Development of TiN/AlN-based superconducting qubit components

This paper presents the fabrication and characterization of superconducting qubit components from titanium nitride (TiN) and aluminum nitride (AlN) layers to create Josephson junctions and superconducting resonators in an all-nitride architecture. Our methodology comprises a complete process flow for the fabrication of TiN/AlN/TiN junctions, characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), ellipsometry and DC electrical measurements. We evaluated the sputtering rates of AlN under varied conditions, the critical temperatures of TiN thin films for different sputtering environments, and the internal quality factors of TiN resonators in the few-GHz regime, fabricated from these films. Overall, this offered insights into the material properties critical to qubit performance. Measurements of the dependence of the critical current of the TiN / AlN / TiN junctions yielded values ranging from 150 ${\mu}$A to 2 ${\mu}$A, for AlN barrier thicknesses up to ca. 5 nm, respectively. Our findings demonstrate advances in the fabrication of nitride-based superconducting qubit components, which may find applications in quantum computing technologies based on novel materials.

physics.app-ph↗

arXiv2024

Tantalum thin films sputtered on silicon and on different seed layers: material characterization and coplanar waveguide resonator performance

Superconducting qubits are a promising platform for large-scale quantum computing. Besides the Josephson junction, most parts of a superconducting qubit are made of planar, patterned superconducting thin films. In the past, most qubit architectures have relied on niobium (Nb) as the material of choice for the superconducting layer. However, there is also a variety of alternative materials with potentially less losses, which may thereby result in increased qubit performance. One such material is tantalum (Ta), for which high-performance qubit components have already been demonstrated. In this study, we report the sputter-deposition of Ta thin films directly on heated and unheated silicon (Si) substrates as well as onto different, nanometer-thin seed layers from tantalum nitride (TaN), titanium nitride (TiN) or aluminum nitride (AlN) that were deposited first. The thin films are characterized in terms of surface morphology, crystal structure, phase composition, critical temperature, residual resistance ratio (RRR) and RF-performance. We obtain thin films indicative of pure alpha-Ta for high temperature (600{\deg}C) sputtering directly on silicon and for Ta deposited on TaN or TiN seed layers. Coplanar waveguide (CPW) resonator measurements show that the Ta deposited directly on the heated silicon substrate performs best with internal quality factors $Q_i$ reaching 1 x $10^6$ in the single-photon regime, measured at $T=100 {\space \rm mK}$.

cond-mat.mtrl-sci↗

arXiv2024

Controlling 4f antiferromagnetic dynamics via itinerant electronic susceptibility

Optical manipulation of magnetism holds promise for future ultrafast spintronics, especially with lanthanides and their huge, localized 4f magnetic moments. These moments interact indirectly via the conduction electrons (RKKY exchange), influenced by interatomic orbital overlap, and the conduction electron susceptibility. Here, we study this influence in a series of 4f antiferromagnets, GdT2Si2 (T=Co, Rh, Ir), using ultrafast resonant X-ray diffraction. We observe a twofold increase in ultrafast angular momentum transfer between the materials, originating from modifications in the conduction electron susceptibility, as confirmed by first-principles calculations.

cond-mat.mtrl-sci↗

arXiv2022

Observation of multi-directional energy transfer in a hybrid plasmonic-excitonic nanostructure

Hybrid plasmonic devices involve a nanostructured metal supporting localized surface plasmons to amplify light-matter interaction, and a non-plasmonic material to functionalize charge excitations. Application-relevant epitaxial heterostructures, however, give rise to ballistic ultrafast dynamics that challenge the conventional semiclassical understanding of unidirectional nanometal-to-substrate energy transfer. We study epitaxial Au nanoislands on WSe$_2$ with time- and angle-resolved photoemission spectroscopy and femtosecond electron diffraction: this combination of techniques resolves material, energy and momentum of charge-carriers and phonons excited in the heterostructure. We observe a strong non-linear plasmon-exciton interaction that transfers the energy of sub-bandgap photons very efficiently to the semiconductor, leaving the metal cold until non-radiative exciton recombination heats the nanoparticles on hundreds of femtoseconds timescales. Our results resolve a multi-directional energy exchange on timescales shorter than the electronic thermalization of the nanometal. Electron-phonon coupling and diffusive charge-transfer determine the subsequent energy flow. This complex dynamics opens perspectives for optoelectronic and photocatalytic applications, while providing a constraining experimental testbed for state-of-the-art modelling.

cond-mat.mes-hall↗

arXiv2022

Direct observation of ultrafast lattice distortions during exciton-polaron formation in lead-halide perovskite nanocrystals

The microscopic origin of slow carrier cooling in lead-halide perovskites remains debated, and has direct implications for applications. Slow carrier cooling has been attributed to either polaron formation or a hot-phonon bottleneck effect at high excited carrier densities (> 10$^{18}$ cm$^{-3}$). These effects cannot be unambiguously disentangled from optical experiments alone. However, they can be distinguished by direct observations of ultrafast lattice dynamics, as these effects are expected to create qualitatively distinct fingerprints. To this end, we employ femtosecond electron diffraction and directly measure the sub-picosecond lattice dynamics of weakly confined CsPbBr$_3$ nanocrystals following above-gap photo-excitation. The data reveal a light-induced structural distortion appearing on a time scale varying between 380 fs to 1200 fs depending on the excitation fluence. We attribute these dynamics to the effect of exciton-polarons on the lattice, and the slower dynamics at high fluences to slower hot carrier cooling, which slows down the establishment of the exciton-polaron population. Further analysis and simulations show that the distortion is consistent with motions of the [PbBr$_3$]$^{-}$ octahedral ionic cage, and closest agreement with the data is obtained for Pb-Br bond lengthening. Our work demonstrates how direct studies of lattice dynamics on the sub-picosecond timescale can discriminate between competing scenarios, thereby shedding light on the origin of slow carrier cooling in lead-halide perovskites.

cond-mat.mtrl-sci↗

arXiv2021

Intrinsic energy flow in laser-excited 3$d$ ferromagnets

Ultrafast magnetization dynamics are governed by energy flow between electronic, magnetic, and lattice degrees of freedom. A quantitative understanding of these dynamics must be based on a model that agrees with experimental results for all three subsystems. However, ultrafast dynamics of the lattice remain largely unexplored experimentally. Here, we combine femtosecond electron diffraction experiments of the lattice dynamics with energy-conserving atomistic spin dynamics (ASD) simulations and ab-initio calculations to study the intrinsic energy flow in the 3d ferromagnets cobalt (Co) and iron (Fe). The simulations yield a good description of experimental data, in particular an excellent description of our experimental results for the lattice dynamics. We find that the lattice dynamics are influenced significantly by the magnetization dynamics due to the energy cost of demagnetization. Our results highlight the role of the spin system as the dominant heat sink in the first hundreds of femtoseconds. Together with previous findings for nickel [Zahn et al., Phys. Rev. Research 3, 023032 (2021)], our work demonstrates that energy-conserving ASD simulations provide a general and consistent description of the laser-induced dynamics in all three elemental 3d ferromagnets.

cond-mat.mtrl-sci↗

arXiv2021

Photoinduced ultrafast transition of the local correlated structure in chalcogenide phase-change materials

Revealing the bonding and time-evolving atomic dynamics in functional materials with complex lattice structures can update the fundamental knowledge on rich physics therein, and also help to manipulate the material properties as desired. As the most prototypical chalcogenide phase change material, Ge2Sb2Te5 has been widely used in optical data storage and non-volatile electric memory due to the fast switching speed and the low energy consumption. However, the basic understanding of the structural dynamics on the atomic scale is still not clear. Using femtosecond electron diffraction, structure factor calculation and TDDFT-MD simulation, we reveal the photoinduced ultrafast transition of the local correlated structure in the averaged rock-salt phase of Ge2Sb2Te5. The randomly oriented Peierls distortion among unit cells in the averaged rock-salt phase of Ge2Sb2Te5 is termed as local correlated structures. The ultrafast suppression of the local Peierls distortions in individual unit cell gives rise to a local structure change from the rhombohedral to the cubic geometry within ~ 0.3 ps. In addition, the impact of the carrier relaxation and the large amount of vacancies to the ultrafast structural response is quantified and discussed. Our work provides new microscopic insights into contributions of the local correlated structure to the transient structural and optical responses in phase change materials. Moreover, we stress the significance of femtosecond electron diffraction in revealing the local correlated structure in the subunit cell and the link between the local correlated structure and physical properties in functional materials with complex microstructures.

cond-mat.mtrl-sci↗

arXiv2021

Traversing double-well potential energy surfaces: photoinduced concurrent intralayer and interlayer structural transitions in XTe2 (X=Mo, W)

Manipulating crystal structure and the corresponding electronic properties in quantum materials provides opportunities for the exploration of exotic physics and practical applications. Here, by ultrafast electron diffraction, structure factor calculation and TDDFT-MD simulations, we report the photoinduced concurrent intralayer and interlayer structural transitions in the Td and 1T' phase of XTe2 (X=Mo, W). Concomitant with the interlayer structural transition by shear displacement, the ultrafast suppression of the intralayer Peierls distortion within 0.3 ps is demonstrated and attributed to Mo-Mo (W-W) bond stretching. We discuss the modification of multiple quantum electronic states associated with the intralayer and interlayer structural transitions, such as the topological band inversion and the higher-order topological state. The twin structure and the stacking fault in XTe2 are identified by the ultrafast structural response. Our work elucidates the pathway of the photoinduced intralayer and interlayer structural transitions in atomic and femtosecond spatiotemporal scale. Moreover, the concurrent intralayer and interlayer structural transitions reveals the traversal of all double-well potential energy surfaces (DWPES) by laser excitation in material system, which may be an intrinsic mechanism in the field of photoexcitation-driven symmetry engineering, beyond the single DWPES transition model and the order-disorder transition model.

cond-mat.mtrl-sci↗

arXiv2021

Multi-phonon diffuse scattering in solids from first-principles: Application to layered crystals and 2D materials

Time-resolved diffuse scattering experiments have gained increasing attention due to their potential to reveal non-equilibrium dynamics of crystal lattice vibrations with full momentum resolution. Although progress has been made in interpreting experimental data on the basis of one-phonon scattering, understanding the role of individual phonons can be sometimes hindered by multi-phonon excitations. In Ref. [{\it arXiv:2103.10108}] we have introduced a rigorous approach for the calculation of the all-phonon inelastic scattering intensity of solids from first-principles. In the present work, we describe our implementation in detail and show that multi-phonon interactions are captured efficiently by exploiting translational and time-reversal symmetries of the crystal. We demonstrate its predictive power by calculating the scattering patterns of monolayer molybdenum disulfide (MoS$_2$), bulk MoS$_2$, and black phosphorus (bP), and we obtain excellent agreement with our measurements of thermal electron diffuse scattering. Remarkably, our results show that multi-phonon excitations dominate in bP across multiple Brillouin zones, while in MoS$_2$ they play a less pronounced role. We expand our analysis for each system and examine the effect of individual atomic and interatomic vibrational motion on the diffuse scattering signals. We further demonstrate the high-throughput capability of our approach by reporting all-phonon scattering maps of 2D MoSe2, WSe2, WS2, graphene, and CdI2, rationalizing in each case the effect of multi-phonon processes. As a side point, we show that the special displacement method reproduces the thermally distorted configuration that generates precisely the all-phonon diffuse pattern.

cond-mat.mtrl-sci↗

arXiv2021

Efficient first-principles methodology for the calculation of the all-phonon inelastic scattering in solids

Inelastic scattering experiments are key methods for mapping the full dispersion of fundamental excitations of solids in the ground as well as non-equilibrium states. A quantitative analysis of inelastic scattering in terms of phonon excitations requires identifying the role of multi-phonon processes. Here, we develop an efficient first-principles methodology for calculating the all-phonon quantum mechanical structure factor of solids. We demonstrate our method by obtaining excellent agreement between measurements and calculations of the diffuse scattering patterns of black phosphorus, showing that multi-phonon processes play a substantial role. The present approach constitutes a step towards the interpretation of static and time-resolved electron, X-ray, and neutron inelastic scattering data.

cond-mat.mtrl-sci↗

arXiv2020

Ultrafast lattice dynamics and electron-phonon coupling in platinum extracted with a global fitting approach for time-resolved polycrystalline diffraction data

Quantitative knowledge of electron-phonon coupling is important for many applications as well as for the fundamental understanding of nonequilibrium relaxation processes. Time-resolved diffraction provides direct access to this knowledge through its sensitivity to laser-induced lattice dynamics. Here, we present an approach for analyzing time-resolved polycrystalline diffraction data. A two-step routine is used to minimize the number of time-dependent fit parameters. The lattice dynamics are extracted by finding the best fit to the full transient diffraction pattern rather than by analyzing transient changes of individual Debye-Scherrer rings. We apply this approach to platinum, an important component of novel photocatalytic and spintronic applications, for which a large variation of literature values exists for the electron-phonon coupling parameter $G_\mathrm{ep}$. Based on the extracted evolution of the atomic mean squared displacement (MSD) and using a two-temperature model (TTM), we obtain $G_\mathrm{ep}=(3.9\pm0.2)\cdot10^{17}\frac{\mathrm{W}}{\mathrm{m}^3\hspace{1pt}\mathrm{K}}$ (statistical error). We find that at least up to an absorbed energy density of $124\hspace{2pt}\frac{\mathrm{J}}{\mathrm{cm}^3}$, $G_\mathrm{ep}$ is not fluence-dependent. Our results for the lattice dynamics of platinum provide insights into electron-phonon coupling and phonon thermalization and constitute a basis for quantitative descriptions of platinum-based heterostructures in nonequilibrium conditions.

cond-mat.mtrl-sci↗

arXiv2020

Nuclear dynamics of singlet exciton fission: a direct observation in pentacene single crystals

Singlet exciton fission (SEF) is a key process in the development of efficient opto-electronic devices. An aspect that is rarely probed directly, and yet has a tremendous impact on SEF properties, is the nuclear structure and dynamics involved in this process. Here we directly observe the nuclear dynamics accompanying the SEF process in single crystal pentacene using femtosecond electron diffraction. The data reveal coherent atomic motions at 1 THz, incoherent motions, and an anisotropic lattice distortion representing the polaronic character of the triplet excitons. Combining molecular dynamics simulations, time-dependent density functional theory and experimental structure factor analysis, the coherent motions are identified as collective sliding motions of the pentacene molecules along their long axis. Such motions modify the excitonic coupling between adjacent molecules. Our findings reveal that long-range motions play a decisive part in the disintegration of the electronically correlated triplet pairs, and shed light on why SEF occurs on ultrafast timescales.

physics.chem-ph↗