arXiv subjects

Daniel Walkup

Publications and source records attributed to Daniel Walkup.

14 recordsLinked to original sources

arXiv2020

Edge Channels of Broken-Symmetry Quantum Hall States in Graphene probed by Atomic Force Microscopy

The quantum Hall (QH) effect, a topologically non-trivial quantum phase, expanded and brought into focus the concept of topological order in physics. The topologically protected quantum Hall edge states are of crucial importance to the QH effect but have been measured with limited success. The QH edge states in graphene take on an even richer role as graphene is distinguished by its four-fold degenerate zero energy Landau level (zLL), where the symmetry is broken by electron interactions on top of lattice-scale potentials but has eluded spatial measurements. In this report, we map the quantum Hall broken-symmetry edge states comprising the graphene zLL at integer filling factors of $\nu=0,\pm 1$ across the quantum Hall edge boundary using atomic force microscopy (AFM). Measurements of the chemical potential resolve the energies of the four-fold degenerate zLL as a function of magnetic field and show the interplay of the moir\'e superlattice potential of the graphene/boron nitride system and spin/valley symmetry-breaking effects in large magnetic fields.

cond-mat.mes-hall↗

arXiv2019

Doping induced Mott collapse and the density wave instabilities in (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$

The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT) such as emergent electronic orders and pseudogaps that ultimately affect the condensation of Cooper pairs. A huge hindrance to understanding the origin of these phenomena in the curates is the difficulty in accessing doping levels near the parent state. Recently, the J$_{eff}$=1/2 Mott state of the perovskite strontium iridates has revealed intriguing parallels to the cuprates, with the advantage that it provides unique access to the Mott transition. Here, we exploit this accessibility to study the IMT and the possible nearby electronic orders in the electron-doped bilayer iridate (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$. Using spectroscopic imaging scanning tunneling microscopy, we image the La dopants in the top as well as the interlayer SrO planes. Surprisingly, we find a disproportionate distribution of La in these layers with the interlayer La being primarily responsible for the IMT, thereby revealing the distinct site-dependent effects of dopants on the electronic properties of bilayer systems. Furthermore, we discover the coexistence of two electronic orders generated by electron doping: a unidirectional electronic order with a concomitant structural distortion; and local resonant states forming a checkerboard-like pattern trapped by La. This provides evidence that multiple charge orders may exist simultaneously in Mott systems, even with only one band crossing the Fermi energy.

cond-mat.str-el↗

arXiv2018

Disorder induced power-law gaps in an insulator-metal Mott transition

A correlated material in the vicinity of an insulator-metal transition (IMT) exhibits rich phenomenology and variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder. While disorder is well known to create electronic inhomogeneity, recent theoretical studies have indicated that it may play an unexpected and much more profound role in controlling the properties of Mott systems. Theory predicts that disorder might play a role in driving a Mott insulator across an IMT, with the emergent metallic state hosting a power law suppression of the density of states (with exponent close to 1; V-shaped gap) centered at the Fermi energy. Such V-shaped gaps have been observed in Mott systems but their origins are as yet unknown. To investigate this, we use scanning tunneling microscopy and spectroscopy to study isovalent Ru substitutions in Sr$_3$(Ir$_{1-x}$Ru$_x$)$_2$O$_7$ which drives the system into an antiferromagnetic, metallic state. Our experiments reveal that many core features of the IMT such as power law density of states, pinning of the Fermi energy with increasing disorder, and persistence of antiferromagnetism can be understood as universal features of a disordered Mott system near an IMT and suggest that V-shaped gaps may be an inevitable consequence of disorder in doped Mott insulators.

cond-mat.str-el↗

arXiv2018

Interaction Driven Quantum Hall Wedding cake-like Structures in Graphene Quantum Dots

Quantum-relativistic matter is ubiquitous in nature; however it is notoriously difficult to probe. The ease with which external electric and magnetic fields can be introduced in graphene opens a door to creating a table-top prototype of strongly confined relativistic matter. Here, through a detailed spectroscopic mapping, we provide a spatial visualization of the interplay between spatial and magnetic confinement in a circular graphene resonator. We directly observe the development of a multi-tiered "wedding cake"-like structure of concentric regions of compressible/incompressible quantum Hall states, a signature of electron interactions in the system. Solid-state experiments can therefore yield insights into the behaviour of quantum-relativistic matter under extreme conditions.

cond-mat.mes-hall↗

arXiv2018

Topological nature of step edge states on the surface of topological crystalline insulator Pb$_{0.7}$Sn$_{0.3}$Se

In addition to novel surface states, topological insulators can also exhibit robust gapless states at crystalline defects. Step edges constitute a class of common defects on the surface of crystals. In this work we establish the topological nature of one-dimensional (1D) bound states localized at step edges of the [001] surface of a topological crystalline insulator (TCI) Pb$_{0.7}$Sn$_{0.3}$Se, both theoretically and experimentally. We show that the topological stability of the step edge states arises from an emergent particle-hole symmetry of the surface low-energy physics, and demonstrate the experimental signatures of the particle-hole symmetry breaking. We also reveal the effects of an external magnetic field on the 1D bound states. Our work suggests the possibility of similar topological step edge modes in other topological materials with a rocks-salt structure.

cond-mat.str-el↗

arXiv2017

An On/Off Berry Phase Switch in Circular Graphene Resonators

The phase of a quantum state may not return to its original value after the system's parameters cycle around a closed path; instead, the wavefunction may acquire a measurable phase difference called the Berry phase. Berry phases typically have been accessed through interference experiments. Here, we demonstrate an unusual Berry-phase-induced spectroscopic feature: a sudden and large increase in the energy of angular-momentum states in circular graphene p-n junction resonators when a small critical magnetic field is reached. This behavior results from turning on a $\pi$-Berry phase associated with the topological properties of Dirac fermions in graphene. The Berry phase can be switched on and off with small magnetic field changes on the order of 10 mT, potentially enabling a variety of optoelectronic graphene device applications.

cond-mat.mes-hall↗

arXiv2017

Quasiparticle Interference and Strong Electron-Mode Coupling in the Quasi-One-Dimensional Bands of Sr$_2$RuO$_4$

The single-layered ruthenate Sr$_2$RuO$_4$ has attracted a great deal of interest as a spin-triplet superconductor with an order parameter that may potentially break time reversal invariance and host half-quantized vortices with Majorana zero modes. While the actual nature of the superconducting state is still a matter of controversy, it has long been believed that it condenses from a metallic state that is well described by a conventional Fermi liquid. In this work we use a combination of Fourier transform scanning tunneling spectroscopy (FT-STS) and momentum resolved electron energy loss spectroscopy (M-EELS) to probe interaction effects in the normal state of Sr$_2$RuO$_4$. Our high-resolution FT-STS data show signatures of the \beta-band with a distinctly quasi-one-dimensional (1D) character. The band dispersion reveals surprisingly strong interaction effects that dramatically renormalize the Fermi velocity, suggesting that the normal state of Sr$_2$RuO$_4$ is that of a 'correlated metal' where correlations are strengthened by the quasi 1D nature of the bands. In addition, kinks at energies of approximately 10meV, 38meV and 70meV are observed. By comparing STM and M-EELS data we show that the two higher energy features arise from coupling with collective modes. The strong correlation effects and the kinks in the quasi 1D bands may provide important information for understanding the superconducting state. This work opens up a unique approach to revealing the superconducting order parameter in this compound.

cond-mat.str-el↗

arXiv2016

Interplay of orbital effects and nanoscale strain in topological crystalline insulators

Orbital degrees of freedom can have pronounced effects on the fundamental properties of electrons in solids. In addition to influencing bandwidths, gaps, correlation strength and dispersion, orbital effects have also been implicated in generating novel electronic and structural phases, such as Jahn-Teller effect and colossal magnetoresistance. In this work, we show for the first time how the orbital nature of bands can result in non-trivial effects of strain on the band structure. We use scanning tunneling microscopy and quasiparticle interference imaging to study the effects of strain on the electronic structure of a heteroepitaxial thin film of a topological crystalline insulator, SnTe. We find a surprising effect where strain applied in one direction affects the band structure in the perpendicular direction. Our theoretical calculations indicate that this effect directly arises from the orbital nature of the conduction and valance bands. Our results imply that a microscopic model capturing strain effects on the band structure must include a consideration of the orbital nature of the bands.

cond-mat.mes-hall↗

arXiv2015

Nanoscale Determination of the Mass Enhancement Factor in the Lightly-Doped Bulk Insulator Lead Selenide

Bismuth chalcogenides and lead telluride/selenide alloys exhibit exceptional thermoelectric properties which could be harnessed for power generation and device applications. Since phonons play a significant role in achieving these desired properties, quantifying the interaction between phonons and electrons, which is encoded in the Eliashberg function of a material, is of immense importance. However, its precise extraction has in part been limited due to the lack of local experimental probes. Here we construct a method to directly extract the Eliashberg function using Landau level spectroscopy, and demonstrate its applicability to lightly-doped thermoelectric bulk insulator PbSe. In addition to its high energy resolution only limited by thermal broadening, this novel experimental method could be used to detect variations in mass enhancement factor at the nanoscale. As such, it opens up a new pathway for investigating the effects of chemical defects, surface doping and strain on the mass enhancement factor.

cond-mat.mtrl-sci↗

arXiv2015

Strain engineering Dirac surface states in heteroepitaxial topological crystalline insulator thin films

In newly discovered topological crystalline insulators (TCIs), the unique crystalline protection of the surface state (SS) band structure has led to a series of intriguing predictions of strain generated phenomena, from the appearance of pseudo-magnetic fields and helical flat bands, to the tunability of the Dirac SS by strain that may be used to construct "straintronic" nanoswitches. However, practical realization of this exotic phenomenology via strain engineering is experimentally challenging and is yet to be achieved. In this work, we have designed an experiment to not only generate and measure strain locally, but to also directly measure the resulting effects on the Dirac SS. We grow heteroepitaxial thin films of TCI SnTe in-situ and measure them by using high-resolution scanning tunneling microscopy (STM). Large STM images were analyzed to determine picoscale changes in the atomic positions which reveal regions of both tensile and compressive strain. Simultaneous Fourier-transform STM was then used to determine the effects of strain on the Dirac electrons. We find that strain continuously tunes the momentum space position of the Dirac points, consistent with theoretical predictions. Our work demonstrates the fundamental mechanism necessary for using TCIs in strain-based applications, and establishes these systems as highly tunable platforms for nanodevices.

cond-mat.mes-hall↗

arXiv2014

Dirac mass generation from crystal symmetry breaking on the surfaces of topological crystalline insulators

The tunability of topological surface states (SS) and controllable opening of the Dirac gap are of fundamental and practical interest in the field of topological materials. In topological crystalline insulators (TCIs), a spontaneously generated Dirac gap was recently observed, which was ascribed to broken cubic crystal symmetry. However, this structural distortion has not been directly observed so far, and the microscopic mechanism of Dirac gap opening via crystal symmetry breaking remains elusive. In this work, we present scanning tunneling microscopy (STM) measurements of a TCI Pb$_{1-x}$Sn$_x$Se for a wide range of alloy compositions spanning the topological and non-topological regimes. STM topographies directly reveal a symmetry-breaking distortion on the surface, which imparts mass to the otherwise massless Dirac electrons - a mechanism analogous to the long sought-after Higgs mechanism in particle physics. Remarkably, our measurements show that the Dirac gap scales with alloy composition, while the magnitude of the distortion remains nearly constant. Based on theoretical calculations, we find the Dirac mass is controlled by the composition-dependent SS penetration depth, which determines the weight of SS in the distorted region that is confined to the surface. Finally, we discover the existence of SS in the non-topological regime, which have the characteristics of gapped, double-branched Dirac fermions.

cond-mat.mes-hall↗

arXiv2013

Mapping the unconventional orbital texture in topological crystalline insulators

The newly discovered topological crystalline insulators (TCIs) harbor a complex band structure involving multiple Dirac cones. These materials are potentially highly tunable by external electric field, temperature or strain and could find future applications in field-effect transistors, photodetectors, and nano-mechanical systems. Theoretically, it has been predicted that different Dirac cones, offset in energy and momentum-space, might harbor vastly different orbital character, a unique property which if experimentally realized, would present an ideal platform for accomplishing new spintronic devices. However, the orbital texture of the Dirac cones, which is of immense importance in determining a variety of materials properties, still remains elusive in TCIs. Here, we unveil the orbital texture in a prototypical TCI Pb$_{1-x}$Sn$_x$Se. By using Fourier-transform (FT) scanning tunneling spectroscopy (STS) we measure the interference patterns produced by the scattering of surface state electrons. We discover that the intensity and energy dependences of FTs show distinct characteristics, which can directly be attributed to orbital effects. Our experiments reveal the complex band topology involving two Lifshitz transitions and establish the orbital nature of the Dirac bands in this new class of topological materials, which could provide a different pathway towards future quantum applications.

cond-mat.str-el↗

arXiv2013

Observation of Dirac node formation and mass acquisition in a topological crystalline insulator

In the recently discovered topological crystalline insulators (TCIs), topology and crystal symmetry intertwine to create surface states with a unique set of characteristics. Among the theoretical predictions for TCIs is the possibility of imparting mass to the massless Dirac fermions by breaking crystal symmetry, as well as a Lifshitz transition with a change of Fermi surface topology. Here we report high resolution scanning tunneling microscopy studies of a TCI, Pb1-xSnxSe. We demonstrate the formation of zero mass Dirac fermions protected by crystal symmetry and the mechanism of mass generation via symmetry breaking, which constitute the defining characteristics of TCIs. In addition, we show two distinct regimes of fermiology separated by a Van-Hove singularity at the Lifshitz transition point. Our work paves the way for engineering the Dirac band gap and realizing interaction-driven topological quantum phenomena in TCIs.

cond-mat.mes-hall↗

arXiv2013

Imaging the evolution of metallic states in a spin-orbit interaction driven correlated iridate

The Ruddlesden-Popper (RP) series of iridates (Srn+1IrnO3n+1) have been the subject of much recent attention due to the anticipation of emergent physics arising from the cooperative action of spin-orbit (SO) driven band splitting and Coulomb interactions[1-3]. However an ongoing debate over the role of correlations in the formation of the charge gap and a lack of understanding of the effects of doping on the low energy electronic structure have hindered experimental progress in realizing many of the predicted states[4-8] including possible high-Tc superconductivity[7,9]. Using scanning tunneling spectroscopy we map out the spatially resolved density of states in the n=2 RP member, Sr3Ir2O7 (Ir327). We show that the Ir327 parent compound, argued to exist only as a weakly correlated band insulator in fact possesses a substantial ~130meV charge excitation gap driven by an interplay between structure, SO coupling and correlations. A critical component in distinguishing the intrinsic electronic character within the inhomogeneous textured electronic structure is our identification of the signature of missing apical oxygen defects, which play a critical role in many of the layered oxides. Our measurements combined with insights from calculations reveal how apical oxygen vacancies transfer spectral weight from higher energies to the gap energies thereby revealing a path toward obtaining metallic electronic states from the parent-insulating states in the iridates.

cond-mat.mtrl-sci↗