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Daniel Bennett

Publications and source records attributed to Daniel Bennett.

At least 19 recordsLinked to original sources

Hybrid Electronic-Ionic Ferroelectricity in Superlubric van der Waals Heterostructures

One strategy to lower the switching barrier in a sliding ferroelectric (sFE) is to insert an incommensurate spacer to reduce sliding friction, creating a superlubric sliding ferroelectric (SL-sFE). However, how polarization survives across the effectively decoupled outer layers remains an open question. We show that SL-sFEs are fundamentally different from conventional sFEs: polarization is not driven by sliding alone, but by an intricate coupling between interlayer sliding and the out-of-plane buckling of the spacer layer. This coupling results in a unique hybrid electronic-ionic polarization arising from asymmetric orbital hybridization. The interplay of these order parameters generates several distinct types of ferroelectric hysteresis, including mixed first- and second-order transitions, multi-step switching, and antiferroelectric-like behavior, establishing SL-sFEs as a distinct class of ferroelectrics.

cond-mat.mtrl-sci

Lattice Relaxation in Moir\'e Heterobilayers

We develop an analytical theory for lattice relaxation in twisted moir\'e heterobilayers, accounting for lattice mismatch, twist, external biaxial heterostrain, and different elastic constants. Starting from continuum elasticity, we derive the self-consistent equations for the in-plane displacement fields and obtain simple perturbative expressions for the layer-resolved in-plane displacement fields induced by lattice relaxation. We apply our theory to graphene on hBN and representative 2H transition metal dichalcogenide heterobilayers, including MoTe$_2$/WSe$_2$ and WSe$_2$/WS$_2$. Our analytical results agree very well with full numerical solutions over experimentally relevant parameters. We further show that heterobilayers can exhibit a buckling instability near alignment, driven by compressive in-plane strain due to moir\'e relaxation. Our results provide a simple theoretical framework for incorporating lattice relaxation in realistic moir\'e heterostructures.

cond-mat.mes-hall

A multi-ion optical clock with $\mathbf{5 \times 10^{-19}}$ uncertainty

Today's most accurate clocks are based on laser spectroscopy of electronic transitions in single trapped ions and feature fractional frequency uncertainties below $1\times10^{-18}$. Scaling these systems to multiple, simultaneously interrogated ions reduces measurement times, driving recent advances in multi-ion clocks. However, maintaining state-of-the-art systematic uncertainties while increasing the number of ions remains a central challenge. Here, we report on a multi-ion optical atomic clock with a fractional frequency uncertainty of $5.3\times10^{-19}$ and up to 10 \Sr ions. Ion-resolved state detection enables minimization of position-dependent shifts, with residual effects suppressed below the $10^{-20}$-level. Clock operation with eight to ten ions reduces the measurement time by a factor of 4.8 compared to single-ion operation. A comparison with an established \Yb single-ion clock yields an unperturbed frequency ratio of $0.6926711632159660405(20)$, with a statistical uncertainty of $0.9\times10^{-18}$ and a combined uncertainty of $2.9\times 10^{-18}$. These results demonstrate robust multi-ion clock operation with reduced averaging time and state-of-the-art accuracy.

physics.atom-ph

Disorder-induced symmetry breaking in moir\'e bands of marginally twisted bilayer MoS$_2$

Twisted transition-metal dichalcogenides host highly tunable moir\'e potentials, flat bands, and correlated electronic phases, yet the role of disorder in shaping these emergent properties remains largely unresolved. Using scanning tunneling spectroscopy, we investigate the impact of electrostatic disorder on the electronic structure of marginally twisted ($\theta \approx 0.95^\circ$) bilayer MoS$_2$. Differences of 15 meV in the onset energies of the valence and conduction bands between MX- and XM-stacked regions are observed and are unexpected based on symmetry considerations. We further observe spatially correlated disorder in the band onset energy that is consistent with a background random charge density of a few $10^{11}\,\mathrm{cm}^{-2}$. Continuum model calculations for twisted MoS$_2$ reveal dramatic changes in the low-energy moir\'e bands in response to an electric displacement field, in quantitative agreement with experiment. Moreover, the calculated local density of states including disorder broadening reproduces the experimental observations only when structural relaxation is taken into account. These results highlight the critical role of electrostatic disorder in determining the electronic structure of moir\'e materials at the nanoscale.

cond-mat.mtrl-sci

Twisted bilayer graphene from first-principles: structural and electronic properties

We present a comprehensive first-principles study of twisted bilayer graphene (tBLG) for a wide range of twist angles, with a focus on structural and electronic properties. By employing density functional theory (DFT) with an optimized local basis set, we simulate tBLG, obtaining fully relaxed commensurate structures for twist angles down to 0.987{\deg}. For all angles the lattice relaxation agrees well with continuum elastic models. For angles accessible to plane-wave DFT (VASP), we provide a detailed comparison with our local basis DFT (SIESTA) calculations, demonstrating excellent agreement in both the atomic and electronic structure. The dependence of the Fermi velocity and band width on the twist angle shows qualitative agreement with results from an `exact' $\mathbf{k \cdot p}$ continuum model, but reveals a small twist angle offset. Additionally, we provide details of the low-energy wavefunction character, band inversion and symmetries. Our results provide an ab initio reference point for the microscopic structure and electronic properties of tBLG which will serve as the foundation for future studies incorporating many-body effects.

cond-mat.mes-hall

Switching topological states via uniaxial strain in 2D materials

In topological materials, dissipationless edge currents are protected against local defect scattering by the bulk inverted band structure and band gap. We propose that large uniaxial strain can effectively switch a 2D Chern insulator to a topologically trivial state. Further, we suggest that the boundary between strained and unstrained regions of a sample can act as a new edge for dissipationless current flow. Using density functional theory (DFT) calculations we demonstrate the strain-tunability of the monolayer MnBi2S2T2 band structure and the switching of the Chern number. We combine uniaxial and biaxial strain results to map out the strain-tuned topological phase diagram.

cond-mat.str-el

Wavefunction textures in twisted bilayer graphene from first principles

Motivated by recent experiments probing the wavefunctions of magic-angle twisted bilayer graphene (tBLG), we perform large-scale first-principles calculations of tBLG with full atomic relaxation across a wide range of twist angles down to $0.99^\circ$. Focusing on the magic angle, we compute wavefunctions of the low energy bands, resolving atomic-scale details and moir\'e-scale patterns that form triangular, honeycomb, and Kagome lattices. By tuning the interlayer interactions, we illustrate the formation of the flat bands from isolated monolayers and the emergence of the band inversion and fragile topology at a sufficiently large interaction strength. We identify strong indicators of a new phase transition with increasing interlayer interaction strength, achievable with external pressure or a decrease in the twist angle. When this transition occurs, the upper and lower flat bands exchange their wavefunction character and symmetry eigenvalues, which may be correlated with the appearance of superconductivity with electron doping below the magic angle. Our study demonstrates the feasibility of using first-principles wavefunctions to help interpret experimental signatures of topological and correlated phases in tBLG.

cond-mat.mes-hall

Universal Symmetries in Twisted Moir\'e Materials

Two-dimensional multi-layer materials with an induced moir\'e pattern, either due to strain or relative twist between layers, provide a versatile platform for exploring strongly correlated and topological electronic phenomena. While these systems offer unprecedented tunability, their theoretical description remains challenging due to their complex atomic structures and large unit cells. A notable example is twisted bilayer graphene, where even the relevant symmetry group remains unsettled despite its critical role in constructing effective theories. Here, we focus on twisted bilayer graphene and use a combination of analytical methods, molecular dynamics simulations, and first-principles calculations to show that twisted atomic configurations with distinct microscopic symmetries converge to a universal interlayer structure that governs the low-energy physics. This emergent universality provides a robust foundation for symmetry-respecting models and offers insight into the role of commensurability in real twisted moir\'e systems.

cond-mat.str-el

Stacking-dependent electronic structure of ultrathin perovskite bilayers

Twistronics has received much attention as a new method to manipulate the properties of 2D van der Waals structures by introducing moir\'e patterns through a relative rotation between two layers. Here we begin a theoretical exploration of twistronics beyond the realm of van der Waals materials by developing a first-principles description of the electronic structure and interlayer interactions of ultrathin perovskite bilayers. We construct both an ab initio tight-binding model as well as a minimal 3-band effective model for the valence bands of monolayers and bilayers of oxides derived from the Ruddlesden-Popper phase of perovskites, which is amenable to thin-layer formation. We illustrate the approach with the specific example of Sr$_2$TiO$_4$ layers but also provide model parameters for Ca$_2$TiO$_4$ and Ba$_2$TiO$_4$ .

cond-mat.mtrl-sci

Accurate and efficient localized basis sets for two-dimensional materials

First-principles density functional theory (DFT) codes which employ a localized basis offer advantages over those which use plane-wave bases, such as better scaling with system size and better suitability to low-dimensional systems. The trade-off is that care must be taken in order to generate a good localized basis set which is efficient and accurate in a variety of environments. Here we develop and make freely available optimized local basis sets for two common two-dimensional (2D) materials, graphene and hexagonal boron nitride, for the \siesta DFT code. Each basis set is benchmarked against the \abinit plane-wave code, using the same pseudopotentials and exchange-correlation functionals. We find that a significant improvement is obtained by including the $l+2$ polarization orbitals ($4f$) to the basis set, which greatly improves angular flexibility. The optimized basis sets yield much better agreement with plane-wave calculations for key features of the physical system, including total energy, lattice constant and cohesive energy. The optimized basis sets also result in a speedup of the calculations with respect to the non-optimized, native choices.

cond-mat.mtrl-sci

Beyond Intrinsic Motivation: The Role of Autonomous Motivation in User Experience

Motivation and autonomy are fundamental concepts in Human-Computer Interaction (HCI), yet in User Experience (UX) research they have remained surprisingly peripheral. We draw on Self-Determination Theory (SDT) to analyse autonomous and non-autonomous patterns of motivation in 497 interaction experiences. Using latent profile analysis, we identify 5 distinct patterns of motivation in technology use -- "motivational profiles" -- associated with significant differences in need satisfaction, affect, and usability. Users' descriptions of these experiences also reveal qualitative differences between profiles: from intentional, purposive engagement, to compulsive use which users themselves consider unhealthy. Our results complicate exclusively positive notions of intrinsic motivation, and clarify how extrinsic motivation can contribute to positive UX. Based on these findings we identify open questions for UX and SDT, addressing "hedonic amotivation" -- negative experiences in activities which are intrinsically motivated but not otherwise valued -- and "design for internalisation" -- scaffolding healthy and sustainable patterns of engagement over time.

cs.HC

Shift photocurrent vortices from topological polarization textures

Following the recent interest in van der Waals (vdW) ferroelectrics, topologically nontrivial polar structures have been predicted to form in twisted bilayers. However, these structures have proven difficult to observe experimentally. We propose that these textures may be probed optically by showing that topological polarization textures result in exotic nonlinear optical responses. We derive this relationship analytically using non-Abelian Berry connections and a quantum-geometric framework, supported by tight-binding and first-principles calculations. For the case of moir\'e materials without centrosymmetry, which form networks of polar merons and antimerons, the shift photoconductivity forms a vortex-like structure in real space. For a range of frequencies where transitions between topologically trivial bands occur at the Brillouin zone edge, the shift photocurrents are antiparallel to the in-plane electronic polarization field. Our findings highlight the interplay between complex polarization textures and nonlinear optical responses in vdW materials and provide a sought-after strategy for their experimental detection.

cond-mat.mes-hall

Flat and tunable moire phonons in twisted transition-metal dichalcogenides

Displacement fields are one of the main tuning knobs employed to engineer flat electronic band dispersions in twisted van der Waals multilayers. Here, we show that electric fields can also be used to tune the phonon dispersion of moir\'e superlattices formed by non-centrosymmetric materials, focusing on twisted transition metal dichalcogenide homobilayers. This effect arises from the intertwining between the local stacking configuration and the formation of polar domains within the moir\'e supercell. For small twist angles, increasing the electric field leads to a universal moir\'e phonon spectrum characterized by a substantially softened longitudinal acoustic phason mode and a flat optical phonon mode, both of which cause a significant enhancement in the vibrational density of states. The phasons also acquire a prominent chiral character, displaying a nonzero angular momentum spread across the Brillouin zone. We discuss how the tunability of the moir\'e phonon spectra may affect electronic properties, focusing on the recently discovered phenomenon of van der Waals ferroelectricity.

cond-mat.mes-hall

Plasmonic polarization sensing of electrostatic superlattice potentials

Plasmon polaritons are formed by coupling light with delocalized electrons. The half-light and half-matter nature of plasmon polaritons endows them with unparalleled tunability via a range of parameters, such as dielectric environments and carrier density. Therefore, plasmon polaritons are expected to be tuned when in proximity to polar materials since the carrier density is tuned by an electrostatic potential; conversely, the plasmon polariton response might enable the sensing of polarization. Here, we use infrared nano-imaging and nano-photocurrent measurements to investigate heterostructures composed of graphene and twisted hexagonal boron nitride (t-BN), with alternating polarization in a triangular network of moir\'e stacking domains. We observe that the carrier density and the corresponding plasmonic response of graphene are modulated by polar domains in t-BN. In addition, we demonstrate that the nanometer-wide domain walls of graphene moir\'es superlattices, created by the polar domains of t-BN, provide momenta to assist the plasmonic excitations. Furthermore, our studies establish that the plasmon of graphene could function as a delicate sensor for polarization textures. The evolution of polarization textures in t-BN under uniform electric fields is tomographically examined via plasmonic imaging. Strikingly, no noticeable polarization switching is observed under applied electric fields up to 0.23 V/nm, at variance with transport reports. Our nano-images unambiguously reveal that t-BN with triangular domains acts like a ferrielectric, rather than ferroelectric claimed by many previous studies.

cond-mat.mes-hall

Stacking-engineered ferroelectricity and multiferroic order in van der Waals magnets

Two-dimensional (2D) materials that exhibit spontaneous magnetization, polarization or strain (referred to as ferroics) have the potential to revolutionize nanotechnology by enhancing the multifunctionality of nanoscale devices. However, multiferroic order is difficult to achieve, requiring complicated coupling between electron and spin degrees of freedom. We propose a universal method to engineer multiferroics from van der Waals magnets by taking advantage of the fact that changing the stacking between 2D layers can break inversion symmetry, resulting in ferroelectricity and possibly magnetoelectric coupling. We illustrate this concept using first-principles calculations in bilayer NiI$_2$, which can be made ferroelectric upon rotating two adjacent layers by $180^{\circ}$ with respect to the bulk stacking. Furthermore, we discover a novel multiferroic order induced by interlayer charge transfer which couples the interlayer spin order and electronic polarization. Our approach is not only general but also systematic, and can enable the discovery of a wide variety of 2D multiferroics.

cond-mat.mtrl-sci

Imaging topological polar structures in marginally twisted 2D semiconductors

Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique properties not present in the individual layers themselves. Ferroelectricity for example, arises due to broken inversion symmetry in twisted and strained bilayers of 2D semiconductors with stacking domains of alternating out-of-plane polarization. However, understanding the individual contributions of twist and strain to the formation of topological polar nanostructures remains to be established and has proven to be experimentally challenging. Inversion symmetry breaking has been predicted to give rise to an in-plane component of polarization along the domain walls, leading to the formation of a network of topologically non-trivial merons (half-skyrmions) that are Bloch-type for twisted and Neel-type for strained systems. Here we utilise angle-resolved, high-resolution vector piezoresponse force microscopy (PFM) to spatially resolve polarization components and topological polar nanostructures in marginally twisted bilayer WSe2, and provide experimental proof for the existence of topologically non-trivial meron/antimeron structures. We observe both Bloch-type and Neel-type merons, allowing us to differentiate between moire superlattices formed due to twist or heterogeneous strain. This first demonstration of non-trivial real-space topology in a twisted van der Waals heterostructure opens pathways for exploring the connection between twist and topology in engineered nano-devices.

cond-mat.mes-hall

2D Nitride Ordered Alloys: A Novel Class of Ultra-Wide Bandgap Semiconductors

Ultra-wide bandgap (UWBG) semiconductors are poised to transform power electronics by surpassing the capabilities of established wide bandgap materials, such as GaN and SiC, owing to their capability to operate at higher voltage, frequency, and temperature ranges. While bulk group-III nitrides and their alloys have been extensively studied in the UWBG realm, their two-dimensional counterparts remain unexplored. Here, we examine the stability and electronic properties of monolayers of ordered boron-based group-III nitride alloys with general formula BxM1-xN, where M = Al, Ga. On the basis of ab initio calculations we identify a number of energetically and dynamically stable structures. Instrumental to their stability is a previously overlooked out-of-plane displacement (puckering) of atoms, which induces a polar ordering and antiferroelectric ground state. Our findings reveal the energy barrier between metastable ferroelectric states is lowered by successive switching of out-of-plane displacements through an antiferroelectric state.

cond-mat.mtrl-sci

Band structure engineering using a moir\'e polar substrate

Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we utilize twisted bilayer boron nitride (BN) as a moir\'e substrate for band structure engineering. Small-angle-twisted bilayer BN is endowed with periodically arranged up and down polar domains, which imprints a periodic electrostatic potential on a target two-dimensional (2D) material placed on top. As a proof of concept, we use Bernal bilayer graphene as the target material. The resulting modulation of the band structure appears as superlattice resistance peaks, tunable by varying the twist angle, and Hofstadter butterfly physics under a magnetic field. Additionally, we demonstrate the tunability of the moir\'e potential by altering the dielectric thickness underneath the twisted BN. Finally, we find that near-60{\deg}-twisted bilayer BN provides a unique platform for studying the moir\'e structural effect without the contribution from electrostatic moir\'e potentials. Tunable moir\'e polar substrates may serve as versatile platforms to engineer the electronic, optical, and mechanical properties of 2D materials and van der Waals heterostructures.

cond-mat.mes-hall