arXiv subjects

Dan Ritter

Publications and source records attributed to Dan Ritter.

3 recordsLinked to original sources

arXiv2023

Two-dimensional carrier gas at a polar interface without surface band gap states: A first-principles perspective

We present first-principles calculations of the interface between GaN and strained AlN, using a slab model in which polarization is compensated via surface fractional-charge pseudo-hydrogen atoms. We show that an interface two-dimensional carrier electron or hole gas emerges naturally in response to different compensating surface charges, but that this need not involve in-gap surface states.

cond-mat.mtrl-sci↗

arXiv2017

An Alternative Definition of the Equivalent Noise Temperature of Two Terminal Networks

A hypothetical test resistor is connected in parallel to a two terminal network. The temperature of the test resistor is tuned, until there is no net flow of noise energy between the network and the resistor. It is shown that this temperature is independent of the value of the resistor. It is therefore suggested that this temperature may serve as an alternative definition of the equivalent noise temperature of a two terminal network. Quite interestingly, this equivalent noise temperature of an ideal pn diode equals the actual temperatue of the diode. Furthermore, if this newly defined equivalent noise temperature can be estimated for a given network by physical arguments, than the noise of the network can be calculated provided its current voltage dependence is known. As an example, the suppression of shot noise due to recombination in the space charge region of a pn diode is estimated using this procedure.

cond-mat.mtrl-sci↗

arXiv2014

On the diameter dependence of metal-nanowire Schottky barrier height

Bardeen's model for the non-ideal metal-semiconductor interface was applied to metal-wrapped cylindrical nanowire systems; a significant effect of the nanowire diameter on the non-ideal Schottky barrier height was found. The calculations were performed by solving Poisson's equation in the nanowire, self-consistently with the constraints set by the non-ideal interface conditions; in these calculations the barrier height is obtained from the solution, and it is not a boundary condition for Poisson's equation. The main finding is that thin nanowires are expected to have tens of meV higher Schottky barriers compared to their thicker counterparts. What lies behind this effect is the electrostatic properties of metal-wrapped nanowires; in particular, since depletion charge is reduced with nanowire radius, the potential drop on the interfacial layer, is reduced - leading to the increase of the barrier height with nanowire radius reduction.

cond-mat.mes-hall↗