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Da Zhou

Publications and source records attributed to Da Zhou.

At least 19 recordsLinked to original sources

PRCD-MAP: Learning How Much to Trust Imperfect Priors in Causal Discovery

External priors of unknown reliability create a brittle trade-off in causal discovery: blind trust amplifies errors, blind rejection wastes signal. Real priors are also heterogeneously reliable -- physical laws are trustworthy, LLM-suggested edges are speculative -- yet existing methods either ignore priors or impose them through globally uniform trust. We propose PRCD-MAP, a soft prior-consumption layer that assigns per-edge trust to an imperfect prior and uses it to modulate a prior-aware $\ell_1$ and prior-weighted $\ell_2$ regularizer in a MAP objective. Trust is calibrated by empirical Bayes on a Laplace-approximated marginal likelihood and propagated along the prior graph by an MLP, so data-confirmed neighborhoods boost trust and contradictions suppress it. PRCD-MAP enjoys a population-level safety guarantee: it is $\varepsilon$-safe in expectation over the prior-generation distribution, with $\varepsilon\leq C\cdot\mathrm{acc}(1{-}\mathrm{acc})\cdot d^2/T$ at the parametric $T^{-1}$ rate and vanishing at the prior-quality endpoints. When the prior is uninformative, learned trust provably collapses to its floor and the method recovers a no-prior baseline. Empirically, on real CausalTime data PRCD-MAP exploits informative LLM priors (LLM-prior gain $+0.067/+0.089$ AUROC on AQI/Medical over a no-prior PRCD-MAP backbone; combined backbone+prior lead $+0.123/+0.043$ over PCMCI+), auto-attenuates on the anonymous-variable Traffic stress test, and retains a lead at $d{=}300$; against BayesDAG, the closest soft-Bayesian baseline, PRCD-MAP wins on every CausalTime dataset under a matched $W_0$-only protocol. A four-way ablation isolates each component: EB calibration and MLP trust propagation jointly carry the plurality of the gain, with positive sign on every dataset. Extensions to nonlinear (NAM) and cross-sectional settings show the calibrated-trust principle is setting-agnostic.

stat.ML

Suppression of Metallic Transport in Nitrogen-rich Two-Dimensional Transition Metal Nitrides

The recent experimental realization of two-dimensional (2D) transition metal nitrides (TMNs, e.g., Mo5N6, {\delta}-MoN, and W5N6) opens new opportunities for exploring their fundamental physical properties at the two-dimensional limit. In this work, we propose a unified picture of transport phenomena in the nitrogen-rich 2D W5N6 and Mo5N6, and the stoichiometric 2D {\delta}-MoN based on several observations and first-principles calculations. Temperature coefficient of resistance (TCR) and magnetoresistance (MR) from Hall measurements consistently suggest disorder-induced transport mechanism at low temperatures (10-30 K). Notably, we observe a transition from metal to semimetal driven by the variation of nitrogen content in TMNs, supported by the suppressed density of states at the Fermi energy in nitrogen-rich TMNs (e.g. Mo5N6) from first-principle calculations. Carrier density calculations of bulk TMNs and 2D TMNs with -NH termination groups further reveal the switching of majority carrier type of Mo5N6 at reduced thickness, which is in great agreement with Hall measurement results. Our findings demonstrate that high nitrogen content in metallic molybdenum nitrides can induce the transition to a semimetallic phase at the 2D limit, shedding light on both the fundamental aspects of these materials and directions in future material design.

cond-mat.mtrl-sci

Resonance-Enhanced Four-Wave Mixing Imaging for Mapping Defect Regions in Vanadium-Doped WS2 Monolayers

Defect engineering is crucial for tuning 2D transition metal dichalcogenide properties for quantum and optoelectronic applications. While conventional photoluminescence (PL) and Raman spectroscopies are important characterization tools, their mapping in large area samples can be time-consuming and lacks direct sensitivity for comprehensive defect characterization. Here, we introduce resonance-enhanced four-wave mixing (FWM) imaging for precise imaging and characterization of vanadium-induced defect states in WS2 monolayers. Our multi-modal investigation, integrating hyperspectral PL, Raman, and supported by density functional calculations, reveals nanoscale doping inhomogeneities, their influence on excitonic and vibrational properties. We observe resonance-enhanced FWM signals correlating with vanadium-induced defect regions, evidencing their unique nonlinear optical response. This work establishes FWM as an essential platform for high-resolution, defect-sensitive imaging, advancing defect-engineered excitonic devices and enabling novel nonlinear quantum photonics.

cond-mat.mes-hall

Nanoscopy of Excitons in Atomically Thin In-Plane Heterostructures with Nanointerfaces

Atomically sharp 2D in-plane heterostructures with nanoscale interfaces provide a powerful platform for tailoring optical and electrical properties at the nanoscale, enabling novel device engineering and the exploration of new physical phenomena. However, direct experimental correlation between local dielectric response and excitonic properties across such interfaces has remained elusive. Here, we probed the nanoscale complex dielectric function and the corresponding localized photoluminescence (PL) modulations in heterostructure domains of lateral monolayer MoxW1-xS2 - WxMo1-xS2, synthesized using a liquid-phase precursor-assisted approach. Near-field nano imaging across the visible-near-infrared range enables real space mapping of sharp amplitude and phase changes at the heterointerface, resolving the local complex dielectric function with nano-meter scale spatial resolution. Excitation energy-dependent nano spectroscopy reveals a reversal of dielectric contrast between Mo-rich and W-rich domains at their respective excitonic resonances, consistent with Lorentz-oscillator fits. Complementary hyperspectral nano-PL mapping resolves the evolution of excitonic emission across the lateral heterointerface, with neutral-exciton intensities varying continuously from W-rich to Mo-rich regions. Effective-medium theory modeling of the imaginary part of the effective dielectric function of the heterostructure as a function of photon energy and Mo filling fraction reproduces the observed excitonic trends, linking the PL evolution to a composition-dependent dielectric response. Together, these results provide direct nanoscale correlation between dielectric and excitonic boundaries in laterally stitched monolayer heterostructures and establish a multimodal near-field spectroscopy framework for probing excitonic phenomena at the nanoscale.

cond-mat.mtrl-sci

First principles and scanning tunneling spectroscopical evidences for thermodynamically stable "on-top" sulfur divacancy in monolayer WS$_{2}$

Chalcogen vacancies in monolayer transition metal dichalcogenides (TMDs), such as WS$_{2}$, play a crucial role in various applications ranging from optoelectronics and catalysis to quantum information science (QIS), making their identification and control essential. This study focuses on WS$_{2}$ single vacancy and vacancy pairs. Using first principles computations, we investigate their thermodynamic stabilities and electronic structures. We identify an "on-top" divacancy configuration where two vacancies sit on top of each other to be the only energetically stable complex with a binding energy of 160 meV. We compute a small difference in electronic structure with a shift of the unoccupied state by 140 meV for the divacancy complex and observe electronic state shift during Scanning Tunneling Spectroscopy of a series of vacancy in WS$_2$ providing spectroscopical evidence for the presence of this defect.

cond-mat.mtrl-sci

Bistability and Noise-Induced Evasion in Tumor-Immune Dynamics with Antigen Accumulation and Immune Escape

Tumor-immune interactions are shaped by both antigenic heterogeneity and stochastic perturbations in the tumor microenvironment, yet the mathematical mechanisms underlying immune phase transitions remain poorly understood. We propose a four-compartment dynamical model that incorporates antigen accumulation and immune escape mutations. Bifurcation analysis reveals bistability between immune surveillance and immune escape states, providing a mechanistic explanation for heterogeneous immune outcomes during tumor progression. In the multistable regime, the stable manifold of a saddle point partitions the state space into distinct basins of attraction, determining the long-term fate of the system. We further analyze how stochastic fluctuations in the tumor microenvironment perturb these separatrices, potentially triggering irreversible state transitions. By characterizing the critical noise intensity and estimating the tipping time, we establish a mathematical framework for assessing noise-induced transitions. The model further predicts that increasing tumor cell death can improve system resilience to stochastic perturbations, whereas stronger immune pressure may facilitate immune escape-highlighting the nonlinear and non-monotonic nature of tumor-immune dynamics.

q-bio.PE

Interface Magnetism in Vanadium-doped MoS$_2$/Graphene Heterostructures

Magnetism in two-dimensional materials is of great importance in discovering new physical phenomena and developing new devices at the nanoscale. In this paper, first-principles simulations are used to calculate the electronic and magnetic properties of heterostructures composed of Graphene and MoS$_2$ considering the influence of point defects and Vanadium doping. It is found that the concentration of the dopants and the types of defects can result in induced magnetic moments leading to ferromagnetically polarized systems with sharp interfaces. This provides a framework for interpreting the experimental observations of enhanced ferromagnetism in both MoS$_2$/Graphene and V-doped MoS$_2$/Graphene heterostructures. The computed electronic and spin polarizations give a microscopic understanding of the origin of ferromagnetism in these systems and illustrate how doping and defect engineering can lead to targeted property tunability. Our work has demonstrated that through defects engineering, ferromagnetism can be achieved in V-doped MoS$_2$/Graphene heterostructures, providing a potential way to induce magnetization in other TMDC/Graphene materials and opening new opportunities for their applications in nano-spintronics.

cond-mat.mtrl-sci

Fixed-budget simulation method for growing cell populations

Investigating the dynamics of growing cell populations is crucial for unraveling key biological mechanisms in living organisms, with many important applications in therapeutics and biochemical engineering. Classical agent-based simulation algorithms are often inefficient for these systems because they track each individual cell, making them impractical for fast (or even exponentially) growing cell populations. To address this challenge, we introduce a novel stochastic simulation approach based on a Feynman-Kac-like representation of the population dynamics. This method, named the Feynman-Kac-inspired Gillespie's Stochastic Simulation Algorithm (FKG-SSA), always employs a fixed number of independently simulated cells for Monte Carlo computation of the system, resulting in a constant computational complexity regardless of the population size. Furthermore, we theoretically show the statistical consistency of the proposed method, indicating its accuracy and reliability. Finally, a couple of biologically relevant numerical examples are presented to illustrate the approach. Overall, the proposed FKG-SSA effectively addresses the challenge of simulating growing cell populations, providing a solid foundation for better analysis of these systems.

q-bio.QM

Downscaling of non van der Waals Semimetallic W5N6 with Resistivity Preservation

The bulk phase of transition metal nitrides (TMNs) has long been a subject of extensive investigation due to their utility as coating materials, electrocatalysts, and diffusion barriers, attributed to their high conductivity and refractory properties. Downscaling TMNs into two-dimensional (2D) forms would provide valuable members to the existing 2D materials repertoire, with potential enhancements across various applications. Moreover, calculations have anticipated the emergence of uncommon physical phenomena in TMNs at the 2D limit. In this study, we use the atomic substitution approach to synthesize 2D W5N6 with tunable thicknesses from tens of nanometers down to 2.9 nm. The obtained flakes exhibit high crystallinity and smooth surfaces. Electrical measurements on 15 samples show an average electrical conductivity of 161.1 S/cm, which persists while thickness decreases from 45.6 nm to 2.9 nm. The observed weak gate tuning effect suggests the semimetallic nature of the synthesized 2D W5N6. Further investigation into the conversion mechanism elucidates the crucial role of chalcogen vacancies in the precursor for initiating the reaction and strain in propagating the conversion. Our work introduces a desired semimetallic crystal to the 2D material library with mechanistic insights for future design of the synthesis.

cond-mat.mtrl-sci

Determining cell population size from cell fraction in cell plasticity models

Quantifying the size of cell populations is crucial for understanding biological processes such as growth, injury repair, and disease progression. Often, experimental data offer information in the form of relative frequencies of distinct cell types, rather than absolute cell counts. This emphasizes the need to devise effective strategies for estimating absolute cell quantities from fraction data. In response to this challenge, we present two computational approaches grounded in stochastic cell population models: the first-order moment method (FOM) and the second-order moment method (SOM). These methods explicitly establish mathematical mappings from cell fraction to cell population size using moment equations of the stochastic models. Notably, our investigation demonstrates that the SOM method obviates the requirement for a priori knowledge of the initial population size, highlighting the utility of incorporating variance details from cell proportions. The robustness of both the FOM and SOM methods was analyzed from different perspectives. Additionally, we extended the application of the FOM and SOM methods to various biological mechanisms within the context of cell plasticity models. Our methodologies not only assist in mitigating the inherent limitations of experimental techniques when only fraction data is available for detecting cell population size, but they also offer new insights into utilizing the stochastic characteristics of cell population dynamics to quantify interactions between different biomasses within the system.

q-bio.QM

Strong magneto-optical responses of an ensemble of defect-bound excitons in ambient exposed WS$_{2}$ and WSe$_{2}$ monolayers

Transition metal dichalcogenide (TMD) monolayers present a singular coupling in their spin and valley degrees of freedom. Moreover, by applying an external magnetic field it is possible to break the energy degeneracy between their K and $-$K valleys. This valley Zeeman effect opens the possibility of controlling and distinguishing the spin and valley characters of charge carriers in TMDs by their optical transition energies, making these materials promising for the next generation of spintronic and photonic devices. However, the free excitons of pristine TMD monolayers present a moderate valley Zeeman splitting of $\approx 0.23$ meV/T. Therefore, alternative excitonic states with higher magnetic responses are mandatory for application purposes. Here, we investigate the magneto-optical properties of ambient exposed WS$_2$ and WSe$_2$ monolayers by circularly polarized magneto-photoluminescence experiments at cryogenic temperatures. A broad lower energy photoluminescence emission related to an ensemble of defects is observed, presenting remarkable valley-related splittings of $\approx 1.45$ meV/T and $\approx 1.11$ meV/T for WS$_2$ and WSe$_2$ monolayers, respectively. In addition, we report a significant valley polarization of charge carriers in the defect mid-gap states induced by the external magnetic field. We explain this valley-polarized population and enhanced valley-related splitting in terms of imbalanced intervalley relaxations, leading to a magnetic field-dependent distribution of charge carriers in multiple defect levels. This effect, together with the individual Zeeman shiftings of the mid-gap states, explains the strong magneto-optical responses observed. Our work uncovers the singular potential of manipulating the light emission of ambient exposed TMD monolayers by an external magnetic field.

cond-mat.mes-hall

Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?

Monolayers of molybdenum disulfide (MoS2) are the most studied two-dimensional (2D) transition-metal dichalcogenides (TMDs), due to its exceptional optical, electronic, and opto-electronic properties. Recent studies have shown the possibility of incorporating a small amount of magnetic transition metals (e.g., Fe, Co, Mn, V) into MoS2 to form a 2D dilute magnetic semiconductor (2D-DMS). However, the origin of the observed ferromagnetism has remained elusive, due to the presence of randomly generated sulfur vacancies during synthesis that can pair with magnetic dopants to form complex dopant-vacancy configurations altering the magnetic order induced by the dopants. By combining high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging with first-principles density functional theory (DFT) calculations and magnetometry data, we demonstrate the critical effects of sulfur vacancies and their pairings with vanadium atoms on the magnetic ordering in V-doped MoS2 (V-MoS2) monolayers. Additionally, we fabricated a series of field effect transistors on these V-MoS2 monolayers and observed the emergence of p-type behavior as the vanadium concentration increased. Our study sheds light on the origin of ferromagnetism in V-MoS2 monolayers and provides a foundation for future research on defect engineering to tune the electronic and magnetic properties of atomically thin TMD-based DMSs.

cond-mat.mtrl-sci

Effects of Vanadium Doping on the Optical Response and Electronic Structure of WS$_{2}$ Monolayers

Two-dimensional dilute magnetic semiconductors has been recently reported in semiconducting transition metal dichalcogenides by the introduction of spin-polarized transition metal atoms as dopants. This is the case of vanadium-doped WS$_2$ and WSe$_2$ monolayers, which exhibits a ferromagnetic ordering even above room temperature. However, a broadband characterization of their electronic band structure and its dependence on vanadium concentration is still lacking. Therefore, here we perform power-dependent photoluminescence, resonant four-wave mixing, and differential reflectance spectroscopy to study the optical transitions close to the A exciton energy of vanadium-doped WS$_2$ monolayers with distinct concentrations. Instead of a single A exciton peak, vanadium-doped samples exhibit two photoluminescence peaks associated with transitions to occupied and unoccupied bands. Moreover, resonant Raman spectroscopy and resonant second-harmonic generation measurements revealed a blueshift in the B exciton but no energy change in the C exciton as vanadium is introduced in the monolayers. Density functional theory calculations showed that the band structure is sensitive to the Hubbard \(U\) correction for vanadium and several scenarios are proposed to explain the two photoluminescence peaks around the A exciton energy region. Our work provides the first broadband optical characterization of these two-dimensional dilute magnetic semiconductors, shedding light on the novel electronic features of WS$_{2}$ monolayers which are tunable by the vanadium concentration.

cond-mat.mes-hall

Computational Design of Wiring Layout on Tight Suits with Minimal Motion Resistance

An increasing number of electronics are directly embedded on the clothing to monitor human status (e.g., skeletal motion) or provide haptic feedback. A specific challenge to prototype and fabricate such a clothing is to design the wiring layout, while minimizing the intervention to human motion. We address this challenge by formulating the topological optimization problem on the clothing surface as a deformation-weighted Steiner tree problem on a 3D clothing mesh. Our method proposed an energy function for minimizing strain energy in the wiring area under different motions, regularized by its total length. We built the physical prototype to verify the effectiveness of our method and conducted user study with participants of both design experts and smart cloth users. On three types of commercial products of smart clothing, the optimized layout design reduced wire strain energy by an average of 77% among 248 actions compared to baseline design, and 18% over the expert design.

cs.HC

A substitutional quantum defect in WS$_2$ discovered by high-throughput computational screening and fabricated by site-selective STM manipulation

Point defects in two-dimensional materials are of key interest for quantum information science. However, the space of possible defects is immense, making the identification of high-performance quantum defects extremely challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS$_2$, which present localized levels in the band gap that can lead to bright optical transitions in the visible or telecom regime. Our computed database spans more than 700 charged defects formed through substitution on the tungsten or sulfur site. We found that sulfur substitutions enable the most promising quantum defects. We computationally identify the neutral cobalt substitution to sulfur (Co$_{\rm S}^{0}$) as very promising and fabricate it with scanning tunneling microscopy (STM). The Co$_{\rm S}^{0}$ electronic structure measured by STM agrees with first principles and showcases an attractive new quantum defect. Our work shows how HT computational screening and novel defect synthesis routes can be combined to design new quantum defects.

cond-mat.mtrl-sci

Sulfur Vacancy Related Optical Transitions in Graded Alloys of MoxW1-xS2 Monolayers

Engineering the electronic bandgap is of utmost importance in diverse domains ranging from information processing and communication technology to sensing and renewable energy applications. Transition metal dichalcogenides (TMDCs) provide an ideal platform for achieving this goal through techniques including alloying, doping, and creating in-plane or out-of-plane heterostructures. Here, we report on the synthesis and characterization of atomically controlled two-dimensional graded alloy of MoxW1-xS2, wherein the center region is Mo rich and gradually transitions towards a higher concentration of W atoms at the edges. This unique alloy structure leads to a continuously tunable bandgap, ranging from 1.85 eV in the center to 1.95 eV at the edges consistent with the larger band gap of WS2 relative to MoS2. Aberration-corrected high-angle annular dark-field scanning transmission electron microscopy showed the presence of sulfur monovacancy, VS, whose concentration varied across the graded MoxW1-xS2 layer as a function of Mo content with the highest value in the Mo rich center region. Optical spectroscopy measurements supported by ab initio calculations reveal a doublet electronic state of VS, which was split due to the spin-orbit interaction, with energy levels close to the conduction band or deep in the band gap depending on whether the vacancy is surrounded by W atoms or Mo atoms. This unique electronic configuration of VS in the alloy gave rise to four spin-allowed optical transitions between the VS levels and the valence bands. Our work highlights the potential of simultaneous defect and optical engineering of novel devices based on these 2D monolayers.

cond-mat.mtrl-sci

Bayesian Inference of Phenotypic Plasticity of Cancer Cells Based on Dynamic Model for Temporal Cell Proportion Data

Mounting evidence underscores the prevalent hierarchical organization of cancer tissues. At the foundation of this hierarchy reside cancer stem cells, a subset of cells endowed with the pivotal role of engendering the entire cancer tissue through cell differentiation. In recent times, substantial attention has been directed towards the phenomenon of cancer cell plasticity, where the dynamic interconversion between cancer stem cells and non-stem cancer cells has garnered significant interest. Since the task of detecting cancer cell plasticity from empirical data remains a formidable challenge, we propose a Bayesian statistical framework designed to infer phenotypic plasticity within cancer cells, utilizing temporal data on cancer stem cell proportions. Our approach is grounded in a stochastic model, adept at capturing the dynamic behaviors of cells. Leveraging Bayesian analysis, we explore the moment equation governing cancer stem cell proportions, derived from the Kolmogorov forward equation of our stochastic model. With improved Euler method for ordinary differential equations, a new statistical method for parameter estimation in nonlinear ordinary differential equations models is developed, which also provides novel ideas for the study of compositional data. Extensive simulations robustly validate the efficacy of our proposed method. To further corroborate our findings, we apply our approach to analyze published data from SW620 colon cancer cell lines. Our results harmonize with \emph{in situ} experiments, thereby reinforcing the utility of our method in discerning and quantifying phenotypic plasticity within cancer cells.

stat.AP

Graphene-driven correlated electronic states in one dimensional defects within WS$_2$

Tomonaga-Luttinger liquid (TLL) behavior in one-dimensional systems has been predicted and shown to occur at semiconductor-to-metal transitions within two-dimensional materials. Reports of one-dimensional defects hosting a Fermi liquid or a TLL have suggested a dependence on the underlying substrate, however, unveiling the physical details of electronic contributions from the substrate require cross-correlative investigation. Here, we study TLL formation within defectively engineered WS$_2$ atop graphene, where band structure and the atomic environment is visualized with nano angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and spectroscopy, and non-contact atomic force microscopy. Correlations between the local density of states and electronic band dispersion elucidated the electron transfer from graphene into a TLL hosted by one-dimensional metal (1DM) defects. It appears that the vertical heterostructure with graphene and the induced charge transfer from graphene into the 1DM is critical for the formation of a TLL.

cond-mat.mtrl-sci