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D. Zander

Publications and source records attributed to D. Zander.

2 recordsLinked to original sources

Metallurgical synthesis methods for Mg-Al-Ca scientific model materials

Mg-based alloys are industrially used for structural applications, both as solid solutions alloys and as composites containing intermetallic compounds. However, a further development in terms of mechanical properties requires the investigation of underlying causalities between synthesis, processing and microstructure to adjust the mechanical and the corrosion properties, ideally down to the near atomic scale. Such fundamental scientific investigations with high resolution characterisation techniques require model materials of exceptionally high purity and strictly controlled microstructure e.g. with respect to grain size, morphology, chemical homogeneity as well as content and size of oxide inclusions. In this context, the Mg-Al-Ca system appears exceptionally challenging from a metallurgical perspective due to the high reactivity and high vapor pressures, so that conventional industrial techniques cannot be successfully deployed. Here, we demonstrate the applicability of various scientific synthesis methods from arc melting over solution growth to diffusion couples, extending to effects and parameters for thermo-mechanical processing. Suitable pathways to overcome the specific challenges of the Mg-Al-Ca system are demonstrated, as well as the persistent limitations of the current state of the art laboratory metallurgy technology.

cond-mat.mtrl-sci

Low Frequency Dielectric Loss of Metal/Insulator/Organic Semiconductor Junctions in Ambient Conditions

The complex admittance of metal/oxide/pentacene thin film junctions is investigated under ambient conditions. At low frequencies, a contribution attributed to proton diffusion through the oxide is seen. This diffusion is shown to be anomalous and is believed to be also at the origin of the bias stress effect observed in organic field effect transistors. At higher frequencies, two dipolar contributions are evidenced, attributed to defects located one at the organic/oxide interface or within the organic, and the other in the bulk of the oxide. These two dipolar responses show different dynamic properties that manifest themselves in the admittance in the form of a Debye contribution for the defects located in the oxide, and of a Cole-Cole contribution for the defects related to the organic.

cond-mat.mtrl-sci