arXiv subjects

D. Meier

Publications and source records attributed to D. Meier.

At least 19 recordsLinked to original sources

arXiv2025

Chiral lone-pair helices with handedness coupling to electric-strain fields

Ferrochiral materials with an achiral-to-chiral phase transition and switchable chirality have unique application opportunities, enabling control of the angular momentum of circularly polarized lattice vibrations (chiral phonons) and chirality-related electronic phenomena. Materials that fall into this class are, however, extremely rare, and often accompanied by other types of ferroic order that interfere with the ferrochiral responses. In this work, we demonstrate ferrochirality in two tetragonal tungsten bronzes, K4Bi2Nb10O30 and Rb4Bi2Nb10O30. Using high-resolution X-ray powder diffraction combined with transmission electron microscopy, we solve the incommensurately modulated and chiral structures. Temperature dependent X-ray powder diffraction reveals that both materials undergo an achiral-to-chiral phase transition from P4/mbm to P4212(00{\gamma})q00. The chirality originates from a cooperative helical displacement of Bi3+ atoms perpendicular to the c direction and represents the primary order parameter. As a secondary effect of the ferrochiral order, a spatially varying piezoelectric response is observed, consistent with the polycrystalline nature of the investigated materials. Through invariant analysis, an external electric-strain-field coupling with the piezoelectricity is proposed as a conjugate field for switching chirality, establishing tetragonal tungsten bronzes as a versatile playground for the emergent field of ferrochirality.

cond-mat.mtrl-sci↗

arXiv2025

Switching on Antiferroelectrics

Antiferroelectrics attract broad attention due to their unusual physical characteristics, chief among which is the double-hysteresis loop that separates their antipolar ground state from the voltage-induced polar phase, which is promising for applications in energy storage and electrocaloric cooling. However, their defining features (antipolar ground state and double-hysteresis loops) are increasingly challenged: materials with non-collinear and/or hybrid polar-antipolar order have been discovered, and double-hysteresis has been realized in materials without a conventional antipolar ground state. These developments add to the intensifying interest in fundamental and practical aspects of antiferroelectrics, and call for a fresh look at antiferroelectricity. In this Perspective, we provide an updated and all-encompassing definition of antiferroelectricity, discuss material systems with new antipolar orders and/or engineered double hysteresis, and reflect on emergent properties and theoretical approaches. This work casts a bird's eye view on the rapidly evolving trends that are shaping up the research on ferroics with antipolar order.

cond-mat.mtrl-sci↗

arXiv2024

Strain engineering of magnetic anisotropy in the kagome magnet Fe3Sn2

The ability to control magnetism with strain offers innovative pathways for the modulation of magnetic domain configurations and for the manipulation of magnetic states in materials on the nanoscale. Although the effect of strain on magnetic domains has been recognized since the early work of C. Kittel, detailed local observations have been elusive. Here, we use mechanical strain to achieve reversible control of magnetic textures in a kagome-type Fe3Sn2 ferromagnet without the use of an external electric current or magnetic field in situ in a transmission electron microscope at room temperature. We use Fresnel defocus imaging, off-axis electron holography and micromagnetic simulations to show that tensile strain modifies the structures of dipolar skyrmions and switches their magnetization between out-of-plane and in-plane configurations. We also present quantitative measurements of magnetic domain wall structures and their transformations as a function of strain. Our results demonstrate the fundamental importance of anisotropy effects and their interplay with magnetoelastic and magnetocrystalline energies, providing new opportunities for the development of strain-controlled devices for spintronic applications.

cond-mat.mtrl-sci↗

arXiv2024

Ferroelectric domain walls for environmental sensors

Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D nature of the walls are leveraged to emulate the behavior of electronic components at ultra-small length scales. Here, we demonstrate atmosphere-related reversible changes in the electronic conduction at neutral ferroelectric domain walls in Er(Mn,Ti)O$_3$. By exposing the system to reducing and oxidizing conditions, we drive the domain walls from insulating to conducting, and vice versa, translating the environmental changes into current signals. Density functional theory calculations show that the effect is predominately caused by charge carrier density modulations, which arise as oxygen interstitials accumulate at the domain walls. The work introduces an innovative concept for domain-wall based environmental sensors, giving an additional dimension to the field of domain wall nanoelectronics and sensor technology in general.

cond-mat.mtrl-sci↗

arXiv2024

Challenges and Insights in Growing Epitaxial FeSn Thin Films on GaAs(111) substrate Using Molecular Beam Epitaxy

FeSn is a room-temperature antiferromagnet composed of alternating Fe3Sn kagome layers and honeycomb Sn layers. Its distinctive lattice allows the formation of linearly dispersing Dirac bands and topological flat bands in its electronic band structure, positioning FeSn as an ideal candidate for investigating the interplay between magnetism and topology. In this study, we investigate the epitaxial growth of FeSn thin films on GaAs(111) substrates by molecular beam epitaxy. A significant challenge in this growth process is the diffusion of Ga and As from the substrate into the deposited films and the diffusion of Fe into the substrate. This diffusion complicates the formation of a pure FeSn phase. Through a comprehensive analysis-including reflection high energy electron diffraction, high-resolution X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and vibrating sample magnetometry-we demonstrate that the Sn evaporation temperature plays a critical role in influencing the crystallinity, surface morphology, and magnetic behaviour of the films. Our results show that while it is difficult to grow a single-phase FeSn film on GaAs due to diffusion, optimizing the Sn evaporation temperature can enhance the dominance of the FeSn phase, partially overcoming these challenges.

cond-mat.mtrl-sci↗

arXiv2024

Reversible long-range domain wall motion in an improper ferroelectric

Reversible ferroelectric domain wall movements beyond the 10 nm range associated with Rayleigh behavior are usually restricted to specific defect-engineered systems. Here, we demonstrate that such long-range movements naturally occur in the improper ferroelectric ErMnO3 during electric-field-cycling. We study the electric-field-driven motion of domain walls, showing that they readily return to their initial position after having travelled distances exceeding 250 nm. By applying switching spectroscopy band-excitation piezoresponse force microscopy, we track the domain wall movement with nanometric spatial precision and analyze the local switching behavior. Phase field simulations show that the reversible long-range motion is intrinsic to the hexagonal manganites, linking it to their improper ferroelectricity and topologically protected structural vortex lines, which serve as anchor point for the ferroelectric domain walls. Our results give new insight into the local dynamics of domain walls in improper ferroelectrics and demonstrate the possibility to reversibly displace domain walls over much larger distances than commonly expected for ferroelectric systems in their pristine state, ensuring predictable device behavior for applications such as tunable capacitors or sensors

cond-mat.mtrl-sci↗

arXiv2024

Relation between rare-earth magnetism and the magnetocaloric effect in multiferroic hexagonal manganites

The magnetocaloric effect enables magnetic refrigeration and plays an important role for cooling at cryogenic temperatures, which is essential for emergent technologies such as hydrogen liquefaction and quantum computing. Here, we study the magnetocaloric effect in multiferroic hexagonal manganites by conducting direct adiabatic temperature measurements in pulsed magnetic fields exceeding 20 T. Data gained on polycrystalline HoMnO3, ErMnO3, TmMnO3, and YMnO3 demonstrate a direct correlation between the magnetic 4f-moments and the measured adiabatic temperature change. In HoMnO3, i.e., the system with the largest magnetic 4f-moments, significant temperature changes, {\Delta}Tad, of up to 20.1 K are observed, whereas the effect is largely suppressed in YMnO3. Our systematic investigations show the importance of the rare-earth magnetism for the magnetocaloric effect in multiferroic hexagonal manganites at cryogenic temperatures, reaching about 64% of the adiabatic temperature changes reported for gadolinium at room temperature.

cond-mat.mtrl-sci↗

arXiv2024

Magnetoelectric coupling at the domain level in polycrystalline ErMnO3

We explore the impact of a magnetic field on the ferroelectric domain pattern in polycrystalline hexagonal ErMnO3 at cryogenic temperatures. Utilizing piezoelectric force microscopy measurements at 1.65 K, we observe modifications of the topologically protected ferroelectric domain structure induced by the magnetic field. These alterations likely result from strain induced by the magnetic field, facilitated by intergranular coupling in polycrystalline multiferroics. Our findings give insights into the interplay between electric and magnetic properties at the local scale and represent a so far unexplored pathway for manipulating topologically protected ferroelectric vortex patterns in hexagonal manganites.

cond-mat.mtrl-sci↗

arXiv2024

Post-synthesis tuning of dielectric constant via ferroelectric domain wall engineering

A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls in ferroelectrics can act as such barriers. One advantage domain walls have, in comparison to stationary interfaces, is that they can be moved, offering the potential of post-synthesis control of the dielectric constant. However, to date, direct imaging of how changes in domain wall pattern cause a change in dielectric constant within a single sample has not been realized. In this work, we demonstrate that changing the domain wall density allows the engineering of the dielectric constant in hexagonal-ErMnO3 single crystals. The changes of the domain wall density are quantified via microscopy techniques, while the dielectric constant is determined via macroscopic dielectric spectroscopy measurements. The observed changes in the dielectric constant are quantitatively consistent with the observed variation in domain wall density, implying that the insulating domain walls behave as 'ideal' capacitors connected in series. Our approach to engineer the domain wall density can be readily extended to other control methods, e.g., electric fields or mechanical stresses, providing a novel degree of flexibility to in-situ tune the dielectric constant.

cond-mat.mtrl-sci↗

arXiv2024

Coexistence of multi-scale domains in ferroelectric polycrystals with non-uniform grain-size distributions

Engineering of ferroelectric domain structures enables direct control over the switching dynamics and is crucial for tuning the functional properties of ferroelectrics for various applications, ranging from capacitors to future nanoelectronics. Here, we investigate domain formation in poly- and single crystalline improper ferroelectric DyMnO3. We show that a non-uniform grain-size distribution in the polycrystals facilitates the coexistence of multi-scale domains, varying by up to one order of magnitude in size. This unusual domain structure originates from an inverted domain-size/grain-size dependence that is intrinsic to the hexagonal manganite polycrystals, expanding previous studies towards non-uniform grain-size distributions. Our results demonstrate that the micrometer-sized grains in DyMnO3 represent individual ferroelectric units with a characteristic domain structure, giving a new dimension to domain engineering in ferroelectric polycrystals with non-uniform microstructures.

cond-mat.mtrl-sci↗

arXiv2023

3D oxygen vacancy order and defect-property relations in multiferroic (LuFeO$_3$)$_9$/(LuFe$_2$O$_4$)$_1$ superlattices

Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO$_3$)$_n$/(SrTiO$_3$)$_n$ superlattices. Although it is clear that variations in oxygen content are crucial for the electronic correlation phenomena in oxides, it remains a major challenge to quantify their impact. Here, we measure the chemical composition in multiferroic (LuFeO$_3$)$_9$/(LuFe$_2$O$_4$)$_1$ superlattices, revealing a one-to-one correlation between the distribution of oxygen vacancies and the electric and magnetic properties. Using atom probe tomography, we observe oxygen vacancies arranging in a layered three-dimensional structure with a local density on the order of 10$^{14}$ cm$^{-2}$, congruent with the formula-unit-thick ferrimagnetic LuFe$_2$O$_4$ layers. The vacancy order is promoted by the locally reduced formation energy and plays a key role in stabilizing the ferroelectric domains and ferrimagnetism in the LuFeO$_3$ and LuFe$_2$O$_4$ layers, respectively. The results demonstrate the importance of oxygen vacancies for the room-temperature multiferroicity in this system and establish an approach for quantifying the oxygen defects with atomic-scale precision in 3D, giving new opportunities for deterministic defect-enabled property control in oxide heterostructures.

cond-mat.mtrl-sci↗

arXiv2023

Pressure-control of non-ferroelastic ferroelectric domains in ErMnO3

Mechanical pressure controls the structural, electric, and magnetic order in solid state systems, allowing to tailor and improve their physical properties. A well-established example is ferroelastic ferroelectrics, where the coupling between pressure and the primary symmetry breaking order parameter enables hysteretic switching of the strain state and ferroelectric domain engineering. Here, we study the pressure-driven response in a non-ferroelastic ferroelectric, ErMnO3, where the classical stress-strain coupling is absent, and the domain formation is governed by creation-annihilation processes of topological defects. By annealing ErMnO3 polycrystals under variable pressures in the MPa-regime, we transform non-ferroelastic vortex-like domains into stripe-like domains. The width of the stripe-like domains is determined by the applied pressure as we confirm by three-dimensional phase field simulations, showing that pressure leads to highly oriented layer-like periodic domains. Our work demonstrates the possibility to utilize mechanical pressure for domain engineering in non-ferroelastic ferroelectrics, providing a processing-accessible lever to control their dielectric, electromechanical, and piezoelectric response.

cond-mat.mtrl-sci↗

arXiv2023

Moir\'e Fringes in Conductive Atomic Force Microscopy

Moir\'e physics plays an important role for the characterization of functional materials and the engineering of physical properties in general, ranging from strain-driven transport phenomena to superconductivity. Here, we report the observation of moir\'e fringes in conductive atomic force microscopy (cAFM) scans gained on the model ferroelectric Er(Mn,Ti)O$_3$. By performing a systematic study of the impact of key experimental parameters on the emergent moir\'e fringes, such as scan angle and pixel density, we demonstrate that the observed fringes arise due to a superposition of the applied raster scanning and sample-intrinsic properties, classifying the measured modulation in conductance as a scanning moir\'e effect. Our findings are important for the investigation of local transport phenomena in moir\'e engineered materials by cAFM, providing a general guideline for distinguishing extrinsic from intrinsic moir\'e effects. Furthermore, the experiments provide a possible pathway for enhancing the sensitivity, pushing the resolution limit of local transport measurements by probing conductance variations at the spatial resolution limit via more long-ranged moir\'e patterns.

cond-mat.mtrl-sci↗

arXiv2022

Quantitative 3D mapping of chemical defects at charged grain boundaries in a ferroelectric oxide

Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. Related effects have been intensively studied in epitaxial systems, including ferroelectric domain walls and interfaces in superlattices. Here, we investigate the relation between polar discontinuities and the local chemistry at grain boundaries in polycrystalline ferroelectric ErMnO3. Using orientation mapping and different scanning probe microscopy techniques, we demonstrate that the polycrystalline material develops charged grain boundaries with enhanced electronic conductance. By performing atom probe tomography measurements, we find an enrichment of erbium and a depletion of oxygen at all grain boundaries. The observed compositional changes translate into a charge that exceeds possible polarization-driven effects, demonstrating that structural phenomena rather than electrostatics determine the local chemical composition and related changes in the electronic transport behavior. The study shows that the charged grain boundaries behave distinctly different from charged domain walls, giving additional opportunities for property engineering at polar oxide interfaces.

cond-mat.mtrl-sci↗

arXiv2022

Topological polarization networking in uniaxial ferroelectrics

Discovery of topological polarization textures has put ferroelectrics at the frontier of topological matter science. High-symmetry ferroelectric oxide materials allowing for freedom of the polarization vector rotation offer a fertile ground for emergent topological polar formations, like vortices, skyrmions, merons, and Hopfions. It has been commonly accepted that uniaxial ferroelectrics do not belong in the topological universe because strong anisotropy imposes insurmountable energy barriers for topological excitations. Here we show that uniaxial ferroelectrics provide unique opportunity for the formation of topological polarization networks comprising branching intertwined domains with opposite counterflowing polarization. We report that they host the topological state of matter: a crisscrossing structure of topologically protected colliding head-to-head and tail-to-tail polarization domains, which for decades has been considered impossible from the electrostatic viewpoint. The domain wall interfacing the counterflowing domains is a multiconnected surface, propagating through the whole volume of the ferroelectric.

cond-mat.mtrl-sci↗

arXiv2021

Atomic-scale 3D imaging of individual dopant atoms in a complex oxide

A small percentage of dopant atoms can completely change the physical properties of the host material. For example, chemical doping controls the electronic transport behavior of semiconductors and gives rise to a wide range of emergent electric and magnetic phenomena in oxides. Imaging of individual dopant atoms in lightly doped systems, however, remains a major challenge, hindering characterization of the site-specific effects and local dopant concentrations that determine the atomic-scale physics. Here, we apply atom-probe tomography (APT) to resolve individual Ti atoms in the narrow band gap semiconductor ErMnO3 with a nominal proportion of 0.04 atomic percent. Our 3D imaging measures the Ti concentration at the unit cell level, providing quantitative information about the dopant distribution within the ErMnO3 crystal lattice. High-resolution APT maps reveal the 3D lattice position of individual Ti atoms, showing that they are located within the Mn layers with no signs of clustering or other chemical inhomogeneities. The 3D atomic-scale visualization of individual dopant atoms provides new opportunities for the study of local structure-property relations in complex oxides, representing an important step toward controlling dopant-driven quantum phenomena in next-generation oxide electronics.

cond-mat.mtrl-sci↗

arXiv2021

Dislocation-driven relaxation processes at the conical to helical phase transition in FeGe

The formation of topological spin textures at the nanoscale has a significant impact on the long-range order and dynamical response of magnetic materials. We study the relaxation mechanisms at the conical-to-helical phase transition in the chiral magnet FeGe. By combining ac susceptibility, magnetic force microscopy measurements and micromagnetic simulations, we demonstrate how the motion of magnetic topological defects, here edge dislocations, impacts the local formation of a stable helimagnetic spin structure. Although the simulations show that the edge dislocations move with a velocity of about 100 m/s through the helimagnetic background, their dynamics are observed to disturb the magnetic order on the timescale of minutes due to pinning by randomly distributed structural defects. The results corroborate the substantial impact of dislocation motions on the nanoscale spin structure in chiral magnets, revealing previously hidden effects on the formation of helimagnetic domains and domain walls.

cond-mat.mtrl-sci↗

arXiv2021

Charged ferroelectric domain walls for deterministic a.c. signal control

The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual d.c. conduction ranging from insulating to metallic-like, which is leveraged in domain-wall-based memory, multi-level data storage, and synaptic devices. In contrast to the functional d.c. behaviors at charged walls, their response to alternating currents (a.c.) remains to be resolved. Here, we reveal a.c. characteristics at positively and negatively charged walls in ErMnO3, distinctly different from the response of the surrounding domains. By combining voltage-dependent spectroscopic measurements on macroscopic and local scales, we demonstrate a pronounced non-linear response at the electrode-wall junction, which correlates with the domain-wall charge state. The dependence on the a.c. drive voltage enables reversible switching between uni- and bipolar output signals, providing conceptually new opportunities for the application of charged walls as functional nanoelements in a.c. circuitry.

cond-mat.mtrl-sci↗