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D. Davidovic

Publications and source records attributed to D. Davidovic.

17 recordsLinked to original sources
arXiv2015

Minimum Anisotropy of a Magnetic Nanoparticle out of Equilibrium

In this article we study magnetotransport in single nanoparticles of Ni, Py=Ni$_{0.8}$Fe$_{0.2}$, Co, and Fe, with volumes $15\pm 6$nm$^3$, using sequential electron tunneling at 4.2K temperature. We measure current versus magnetic field in the ensembles of nominally the same samples, and obtain the abundances of magnetic hysteresis. The hysteresis abundance varies among the metals as Ni:Py:Co:Fe=4\,:50\,:100\,:100(\%), in good correlation with the magnetostatic and magnetocrystalline anisotropy. The abrupt change in the hysteresis abundance among these metals suggests a concept of minimum magnetic anisotropy required for magnetic hysteresis, which is found to be $\approx 13$meV. The minimum anisotropy is explained in terms of the residual magnetization noise arising from the spin-orbit torques generated by sequential electron tunneling. The magnetic hysteresis abundances are weakly dependent on the tunneling current through the nanoparticle, which we attribute to current dependent damping.

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arXiv2015

Voltage-Driven Spin-Transfer Torque in a Magnetic Particle

We discuss a spin-transfer torque device, where the role of the soft ferromagnetic layer is played by a magnetic particle or a magnetic molecule, in weak tunnel contact with two spin polarized leads. We investigate if the magnetization of the particle can be manipulated electronically, in the regime where the critical current for magnetization switching is negligibly weak, which could be due to the reduced particle dimensions. Using master equation simulations to evaluate the effects of spin-orbit anisotropy energy fluctuations on spin-transfer, we obtain reliable reading and writing of the magnetization state of such magnetic particle, and find that the device relies on a critical voltage rather than a critical current. The critical voltage is governed by the spin-orbit energy shifts of discrete levels in the particle. This finding opens a possibility to significantly reduce the power dissipation involved in spin-transfer torque switching, by using very small magnetic particles or molecules.

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arXiv2015

Exceptionally Strong Spin-Transfer in Single Ni Nanoparticles

This letter presents studies of spin-transfer efficiency in electron transport via discrete electron-in- a-box levels in individual nanometer-scale Ni particles at 0.06K temperature. In a strong magnetic field, the spin-transfer rates are estimated by measuring the amplitudes of the Zeeman splitting of the levels. We find that the spin- and the charge-transfer rates are comparable, demonstrating significant enhancement of the spin-transfer efficiency compared to that in larger magnets. In a low magnetic field, we find an additional energy splitting as evidence that the spin-transfer rate is far higher than the charge-transfer rate. The effect is explained in terms of the strong mesoscopic spin- orbit torques, which are exerted on the magnetization in response to sequential electron tunneling.

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arXiv2012

Replay to "Comment on 'Quantum phase for an arbitrary system with finite-dimensional Hilbert space'

We point out the crucial difference between the relative and absolute phase observables treated in our contribution \cite{1} and in the Comment by Hall and Pegg \cite{HP} respectively. The main contribution of our work is to show that the quantum expectation of the relative phase is highly discontinuous function of the frequency and to point out interesting dependence of the phase on the number-theoretic nature of the frequencies.

quant-ph↗
arXiv2011

Vacuum Annealed Cu contacts for graphene electronics

We present transfer-length-method measurements of the contact resistance between Cu and graphene, and a method to significantly reduce the contact resistance by vacuum annealing. Even in samples with heavily contaminated contacts, the contacts display very low contact resistance post annealing. Due to the common use of Cu, and it's low chemical reactivity with graphene, thermal annealing will be important for future graphene devices requiring non-perturbing contacts with low contact resistance.

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arXiv2010

Transport in Graphene Tunnel Junctions

We present a technique to fabricate tunnel junctions between graphene and Al and Cu, with a Si back gate, as well as a simple theory of tunneling between a metal and graphene. We map the differential conductance of our junctions versus probe and back gate voltage, and observe fluctuations in the conductance that are directly related to the graphene density of states. The conventional strong-suppression of the conductance at the graphene Dirac point can not be clearly demonstrated, but a more robust signature of the Dirac point is found: the inflection in the conductance map caused by the electrostatic gating of graphene by the tunnel probe. We present numerical simulations of our conductance maps, confirming the measurement results. In addition, Al causes strong n-doping of graphene, Cu causes a moderate p-doping, and in high resistance junctions, phonon resonances are observed, as in STM studies.

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arXiv2008

Tunable Spin Filtering through an Aluminum Nanoparticle

Spin-polarized current through an Al nanoparticle in tunnel contact with two ferromagnets is measured as a function of the direction of the applied magnetic field. The nanoparticle filters the spin of injected electrons along a direction specified by the magnetic field. The characteristic field scale for the filtering corresponds to a lower limit of $8ns$ for the spin-dephasing time. Spin polarized current versus applied voltage increases stepwise, confirming that the spin relaxation time is long only in the ground state and the low-lying excited states of the nanoparticle.

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arXiv2005

Spin-Based Magnetofingerprints and Dephasing in Strongly Disordered Au-Nanobridges

We investigate quantum interference effects with magnetic field (magnetofingerprints) in strongly disordered Au-nanobridges. The magnetofingerprints are unconventional because they are caused by the Zeeman effect, not by the Aharonov-Bohm effect. These spin-based magnetofingerprints are equivalent to the Ericson's fluctuations (the fluctuations in electron transmission probability with electron energy). We present a model based on the Landauer-Buttiker formalism that describes the data. We show that the dephasing time $τ_ϕ(E,T)$ of electrons at temperature $T$ and energy $E$ above the Fermi level can be obtained from the correlation magnetic field. In samples with localization length comparable to sample size, $h/τ_ϕ(E,T) \approx E$, for $E\gg k_B T$, which shows that the Fermi liquid description of electron transport breaks down at length scale comparable to the localization length.

cond-mat.mes-hall↗
arXiv2005

Spin-Polarized Electron Transport through Nanometer-Scale Al Grains

We investigate spin-polarized electron tunnelling through ensembles of nanometer scale Al grains embedded between two Co-reservoirs at 4.2K, and observe tunnelling-magnetoresistance (TMR) and effects from spin-precession in the perpendicular applied magnetic field (the Hanle effect). The spin-coherence time ($T_2^\star$) measured using the Hanle effect is of order $ns$. The dephasing is attributed to electron spin-precession in local magnetic fields. Dephasing process does not destroy $TMR$, which is strongly asymmetric with bias voltage. The asymmetric TMR is explained by spin relaxation in Al grains and asymmetric electron dwell times.

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arXiv2005

Suppression of Spin-Orbit Scattering in Strong-Disordered Gold Nanojunctions

We discovered that spin-orbit scattering in strong-disordered gold nanojunctions is strongly suppressed relative to that in weak-disordered gold thin films. This property is unusual because in weak-disordered films, spin-orbit scattering increases with disorder. Granularity and freezing of spin-orbit scattering inside the grains explains the suppression of spin-orbit scattering. We propose a generalized Elliot-Yafet relation that applies to strong-disordered granular regime.

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arXiv2004

Localization and Capacitance Fluctuations in Disordered Au Nano-junctions

Nano-junctions, containing atomic-scale gold contacts between strongly disordered leads, exhibit different transport properties at room temperature and at low temperature. At room temperature, the nano-junctions exhibit conductance quantization effects. At low temperatures, the contacts exhibit Coulomb-Blockade. We show that the differences between the room-temperature and low temperature properties arise from the localization of electronic states in the leads. The charging energy and capacitance of the nano-junctions exhibit strong fluctuations with applied magnetic field at low temperature, as predicted theoretically.

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arXiv2002

Nanometer-Scale Metallic Grains Connected with Atomic-Scale Conductors

We describe a technique for connecting a nanometer-scale gold grain to leads by atomic-scale gold point contacts. These devices differ from previous metallic quantum dots in that the conducting channels are relatively well-transmitting. We investigate the dependence of the Coulomb blockade on contact resistance. The high-resistance devices display Coulomb blockade and the low-resistance devices display a zero-bias conductance dip, both in quantitative agreement with theory. We find that in the intermediate regime, where the sample resistance is close to $h/e^2$, the I-V curve displays a Coulomb staircase with symmetric contact capacitances.

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arXiv2002

Electron Transport in Metallic Grains

We discuss electron transport in individual nanometer-scale metallic grains at dilution refrigerator temperatures. In the weak coupling regime, the grains exhibit Coulomb blockade and discrete energy levels. Electron-electron interactions lead to clustering and broadening of quasiparticle states. Magnetic field dependences of tunneling resonances directly reveal Kramers degeneracy and Lande g-factors. In grains of Au, which have strong spin-orbit interaction, g-factors are strongly suppressed from the free electron value. We have recently studied grains in the strong coupling regime. Coulomb blockade persists in this regime. It leads to a suppression in sample conductance at zero bias voltage at low temperatures. The conductance fluctuates with the applied magnetic field near zero bias voltage. We present evidence that the fluctuations are induced by electron spin. This paper reviews the evolving progress in interpreting these observations.

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arXiv2001

Electrostatically Assembled Metallic Point Contacts

We describe a method for creating atomic-scale electric contacts. A metal source is deposited on two insulating substrates separated by a 70 nm gap. Electric conductance across the gap is monitored, while protrusions from the bulk extend into the gap and reach corresponding protrusions on the other side of the gap. When the voltage across the gap is large, a pair of corresponding protrusions assembles into a point contact, via equilibrium between electrostatic attraction and a maximum sustained current. The current voltage characteristics of the point contact display crossover from weak link into tunneling junction when its conductance is near 2e2/h, indicating that the point contact is atomic-scale.

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arXiv2000

Fine Structure in Energy Spectra of Ultrasmall Au Nanoparticles

We have studied tunneling into individual Au nanoparticles of estimated diameters 2-5 nm, at dilution refrigerator temperatures. The I-V curves indicate resonant tunneling via discrete energy levels of the particle. Unlike previously studied normal metal particles of Au and Al, in these samples we find that the lowest energy tunneling resonances are split into clusters of 2-10 subresonances. Such effects appear to be increasingly important in smaller grains, as might be expected from the larger characteristic energies.

cond-mat.mes-hall↗
arXiv1999

Spectroscopy, Interactions and Level Splittings in Au Nanoparticles

We have measured the electronic energy spectra of nm-scale Au particles using a new tunneling spectroscopy configuration. The particle diameters ranged from 5nm to 9nm, and at low energies the spectrum is discrete, as expected by the electron-in-a-box model. The density of tunneling resonances increases rapidly with energy, and at higher energies the resonances overlap forming broad resonances. Near the Thouless energy, the broad resonances merge into a continuum. The tunneling resonances display Zeeman splitting in a magnetic field. Surprisingly, the g-factors (~0.3) of energy levels in Au nano-particles are much smaller than the g-factor (2.1) in bulk gold.

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