arXiv Science⌕ Search

arXiv subjects

D. C. Tsui

Publications and source records attributed to D. C. Tsui.

At least 91 records · Page 5Linked to original sources
arXiv2001

Spin-related transport in ultra small Si quantum dots

We investigated electron transport through ultra small Si quantum dots. We found that the $B$-dependence of energy levels is dominated by the Zeeman shift, allowing us to measure the spin difference between two successive ground states directly. In some dots the number of electrons N in the dot can be tuned starting from zero, and the total spin of the dot can be mapped as a function of N and B. For one of the dots we deduced that the dot becomes spontaneously polarized at N=6 with a large spin change ΔS=3/2, demonstrating the essential features of spin blockade. Surprisingly, for N>20, the transitions with ΔS>1/2 do not lead to the suppression of the corresponding peaks at low temperatures.

cond-mat.mes-hall↗
arXiv2001

Highly Anisotropic Transport in the Integer Quantum Hall Effect

At very large tilt of the magnetic (B) field with respect to the plane of a two-dimensional electron system the transport in the integer quantum Hall regime at $ν$ = 4, 6, and 8 becomes strongly anisotropic. At these filling factors the usual {\em deep minima} in the magneto-resistance occur for the current flowing {\em perpendicular} to the in-plane B field direction but develop into {\em strong maxima} for the current flowing {\em parallel} to the in-plane B field. The origin of this anisotropy is unknown but resembles the recently observed anisotropy at half-filled Landau levels.

cond-mat.mes-hall↗
arXiv2000

Spin transitions in a small Si quantum dot

We have studied the magnetic field dependence of the ground state energies in a small Si quantum dot. At low fields the first five electrons are added in a spin-up -- spin-down sequence minimizing the total spin. This sequence does not hold for larger number of electrons in the dot. At high fields the dot undergoes transitions between states with different spins driven entirely by Zeeman energy. We identify some features that can be attributed to transitions between different spin configurations preserving the total spin of the dot. For a few peaks we observed large linear shifts that correspond to the change of the spin of the dot by 3/2. Such a change requires that an electron in the dot flips its spin during every tunneling event.

cond-mat.mes-hall↗
arXiv2000

Reorientation of Anisotropy in a Square Well Quantum Hall Sample

We have measured magnetotransport at half-filled high Landau levels in a quantum well with two occupied electric subbands. We find resistivities that are {\em isotropic} in perpendicular magnetic field but become strongly {\em anisotropic} at $ν$ = 9/2 and 11/2 on tilting the field. The anisotropy appears at an in-plane field, $B_{ip} \sim$ 2.5T, with the easy-current direction {\em parallel} to $B_{ip}$ but rotates by 90$^{\circ}$ at $B_{ip} \sim$ 10T and points now in the same direction as in single-subband samples. This complex behavior is in quantitative agreement with theoretical calculations based on a unidirectional charge density wave state model.

cond-mat.mes-hall↗
arXiv2000

Double-dot charge transport in Si single electron/hole transistors

We studied transport through ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K, the devices show single-electron or single-hole transport through the lithographically defined dot. At T<4K, current through the devices is characterized by multidot transport. From the analysis of the transport in samples with double-dot characteristics, we conclude that extra dots are formed inside the thermally grown gate oxide which surrounds the lithographically defined dot.

cond-mat.mes-hall↗
arXiv1999

Effective Mass of the Four Flux Composite Fermion at $ν= 1/4$

We have measured the effective mass ($m^*$) of the four flux composite fermion at Landau level filling factor $ν= 1/4$ ($^4$CF), using the activation energy gaps at the fractional quantum Hall effect (FQHE) states $ν$ = 2/7, 3/11, and 4/15 and the temperature dependence of the Shubnikov-de Haas (SdH) oscillations around $ν= 1/4$. We find that the energy gaps show a linear dependence on the effective magnetic field $B_{eff}$ ($\equiv B-B_{ν=1/4}$), and from this linear dependence we obtain $m^* = 1.0 m_e$ and a disorder broadening $Γ\sim$ 1 K for a sample of density $n = 0.87 \times 10^{11}$ /cm$^2$. The $m^*$ deduced from the temperature dependence of the SdH effect shows large differences for $ν> 1/4$ and $ν< 1/4$. For $ν> 1/4$, $m^* \sim 1.0 m_e$. It scales as $\sqrt{B_ν}$ with the mass derived from the data around $ν=1/2$ and shows an increase in $m^*$ as $ν\to 1/4$, resembling the findings around $ν=1/2$. For $ν< 1/4$, $m^*$ increases rapidly with increasing $B_{eff}$ and can be described by $m^*/m_e = -3.3 + 5.7 \times B_{eff}$. This anomalous dependence on $B_{eff}$ is precursory to the formation of the insulating phase at still lower filling.

cond-mat.mes-hall↗
arXiv1999

Phase diagram of the integer quantum Hall effect in p-type Germanium

We experimentally study the phase diagram of the integer quantized Hall effect, as a function of density and magnetic field. We used a two dimensional hole system confined in a Ge/SiGe quantum well, where all energy levels are resolved, because the Zeeman splitting is comparable to the cyclotron energy. At low fields and close to the quantum Hall liquid-to-insulator transition, we observe the floating up of the lowest energy level, but NO FLOATING of any higher levels, rather a merging of these levels into the insulating state. For a given filling factor, only direct transitions between the insulating phase and higher quantum Hall liquids are observed as a function of density. Finally, we observe a peak in the critical resistivity around filling factor one.

cond-mat.mes-hall↗
arXiv1999

Non-Kondo zero bias anomaly in electronic transport through an ultra-small Si quantum dot

We have studied low-temperature single electron transport through ultra-small Si quantum dots. We find that at low temperatures Coulomb blockade is partially lifted at certain gate voltages. Furthermore, we observed an enhancement of differential conductance at zero bias. The magnetic field dependence of this zero bias anomaly is very different from the one reported in GaAs quantum dots, inconsistent with predictions for the Kondo effect.

cond-mat.mes-hall↗
arXiv1999

Exact Quantization of Even-Denominator Fractional Quantum Hall State at $ν$=5/2 Landau Level Filling Factor

We report ultra-low temperature experiments on the obscure fractional quantum Hall effect (FQHE) at Landau level filling factor $ν$=5/2 in a very high mobility specimen of $μ=1.7 \times 10^7$ cm$^2$/Vs. We achieve an electron temperature as low as $\sim$ 4~mK, where we observe vanishing $R_{xx}$ and, for the first time, a quantized Hall resistance, $R_{xy}=h/(5/2e^2)$ to within 2 ppm. $R_{xy}$ at the neighboring odd-denominator states $ν$=7/3 and 8/3 is also quantized. The temperature dependences of the $R_{xx}$-minima at these fractional fillings yield activation energy gaps $Δ_{5/2}$=0.11K, $Δ_{7/3}$=0.10K, and $Δ_{8/3}$=0.055K.

cond-mat.mes-hall↗
arXiv1999

Strongly Anisotropic Electronic Transport at Landau Level Filling Factor $ν= 9/2$ and $ν= 5/2$ Under Tilted Magnetic Field

We have investigated the influence of an increasing in-plane magnetic field on the states at half-filling of Landau levels ($ν$ = 11/2, 9/2, 7/2, and 5/2) of a two-dimensional electron system. In the electrically anisotropic phase at $ν$ = 9/2 and 11/2 an in-plane magnetic field of $\sim$ 1-2 T overcomes its initial pinning to the crystal lattice and {\it reorient} this phase. In the initially isotropic phases at $ν$ = 5/2 and 7/2 an in-plane magnetic field {\it induces} a strong electrical anisotropy. In all cases, for high in-plane fields, the high resistance axis is parallel to the direction of the in-plane field.

cond-mat.mes-hall↗
arXiv1999

Mass enhancement of two-dimensional electrons in thin-oxide Si-MOSFET's

We wish to report in this paper a study of the effective mass (m^*) in thin-oxide Si-metal-oxide-semiconductor field-effect-transistors, using the temperature dependence of the Shubnikov-de Haas (SdH) effect and following the methodology developed by J.L. Smith and P.J. Stiles, Phys. Rev. Lett. {\bf 29}, 102 (1972). We find that in the thin oxide limit, when the oxide thickness $d_{ox}$ is smaller than the average two-dimensional electron-electron separation r, m^* is still enhanced and the enhancement can be described by $m^*/m_B = 0.815 + 0.23(r/d_{ox})$, where $m_B = 0.195 m_e$ is the bulk electron mass, $m_e$ the free electron mass. At $n_s = 6 \times 10^{11}/cm^2$, for example, $m^* \simeq 0.25 m_e$, an enhancement doubles that previously reported by Smith and Stiles. Our result shows that the interaction between electrons in the semiconductor and the neutralizing positive charges on the metallic gate electrode is important for mass enhancement. We also studied the magnetic-field orientation dependence of the SdH effect and deduced a value of $3.0 \pm 0.5$ for the effective $g$ factor in our thin oxide samples.

cond-mat.mes-hall↗
arXiv1999

From the magnetic-field-driven transitions to the zero-field transition in two-dimensions

For more than a decade it was widely accepted that two-dimensional electrons are insulating at zero temperature and at zero magnetic-field. Experimentally it was demonstrated that, when placed in a strong perpendicular magnetic field, the insulating phase turns into a quantum-Hall state. While this transition was in accordance with existing theoretical models (KLZ), the density driven metal-insulator transition at zero magnetic-field, recently observed in high-quality two-dimensional systems, was unforeseen and, despite considerable amount of effort, its origins are still unknown. In order to improve our understanding of the zero magnetic-field transition, we conducted a study of the insulator to quantum-Hall transition in low-density, two-dimensional, hole system in GaAs that exhibits the zero magnetic-field metal-insulator transition. We found that, in the low field insulating phase, upon increasing the carrier density towards the metal-insulator transition, the critical magnetic-field of the insulator to quantum-Hall transition decreases and converges to the zero magnetic-field metal-insulator transition. This implies a common origin for both the finite magnetic-field and the zero magnetic-field transitions.

cond-mat↗
arXiv1998

Strongly Anisotropic Transport in Higher Two-Dimensional Landau Levels

Low-temperature, electronic transport in Landau levels N>1 of a two-dimensional electron system is strongly anisotropic. At half-filling of either spin level of each such Landau level the magnetoresistance either collapses to form a deep minimum or is peaked in a sharp maximum, depending on the in-plane current direction. Such anisotropies are absent in the N=0 and N=1 Landau level, which are dominated by the states of the fractional quantum Hall effect. The transport anisotropies may be indicative of a new many particle state, which forms exclusively in higher Landau levels.

cond-mat.mes-hall↗
arXiv1998

Semicircle: An exact relation in the Integer and Fractional Quantum Hall Effect

We present experimental results on the quantized Hall insulator in two dimensions. This insulator, with vanishing conductivities, is characterized by the quantization (within experimental accuracy) of the Hall resistance in units of the quantum unit of resistance, h/e^2. The measurements were performed in a two dimensional hole system, confined in a Ge/SiGe quantum well, when the magnetic field is increased above the nu=1 quantum Hall state. This quantization leads to a nearly perfect semi-circle relation for the diagonal and Hall conductivities. Similar results are obtained with a higher mobility n-type modulation doped GaAs/AlGaAs sample, when the magnetic field is increased above the nu=1/3 fractional quantum Hall state.

cond-mat.mes-hall↗
arXiv1998

The Quantized Hall Insulator: A New Insulator in Two-Dimensions

Quite generally, an insulator is theoretically defined by a vanishing conductivity tensor at the absolute zero of temperature. In classical insulators, such as band insulators, vanishing conductivities lead to diverging resistivities. In other insulators, in particular when a high magnetic field (B) is added, it is possible that while the magneto-resistance diverges, the Hall resistance remains finite, which is known as a Hall insulator. In this letter we demonstrate experimentally the existence of another, more exotic, insulator. This insulator, which terminates the quantum Hall effect series in a two-dimensional electron system, is characterized by a Hall resistance which is approximately quantized in the quantum unit of resistance h/e^2. This insulator is termed a quantized Hall insulator. In addition we show that for the same sample, the insulating state preceding the QHE series, at low-B, is of the HI kind.

cond-mat.mes-hall↗
arXiv1998

Microwave Resonance and Carrier-Carrier Interaction in Two-Dimensional Hole Systems at High Magnetic Field

Microwave frequency conductivity, Re($σ_{xx}$), of high quality two-dimensional hole systems (2DHS) in a large perpendicular magnetic field (B) is measured with the carrier density ($n_s$) of the 2DHS controlled by a backgate bias. The high B insulating phase of the 2DHS exhibits a microwave resonance that remains well-defined, but shifts to higher peak frequency ($f_{pk}$) as $n_s$ is reduced. Over a wide range of $n_s, f_{pk} \propto n_s^{-1/2}$ is observed for the two samples we measured. The data clearly indicate that both carrier-carrier interactions and disorder are indispensable in determining the dynamics of the insulator. The $n_s$ dependence of $f_{pk}$ is consistent with a weakly pinned Wigner crystal in which domain size increases with $n_s$, due to larger carrier-carrier interaction.

cond-mat.mes-hall↗
arXiv1998

Effective Mass and g-Factor of Four Flux Quanta Composite Fermions

We investigate the properties of composite fermions with four attached flux quanta through tilted field experiments near Landau level filling factor nu = 3/4. The observed collapse of fractional quantum Hall gaps in the vicinity of this quarter-filling state can be comprehensively understood in terms of composite fermions with mass and spin. Remarkably, the effective mass and g-factor of these four flux quanta composite fermions around nu = 3/4 are very similar to those of two flux quanta composite fermions around nu = 3/2.

cond-mat.mes-hall↗