arXiv subjects

D. C. Tsui

Publications and source records attributed to D. C. Tsui.

At least 55 records · Page 3Linked to original sources

arXiv2005

Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric

Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.5$\times10^{11}$cm$^{-2}$ to 4.5$\times10^{11}$cm$^{-2}$, virtually without any gate leakage current. Magnetotransport data show the homogeneous depletion of 2DES under gate biases. The characteristic of vertical modulation using ALD dielectric is shown to be better than that using Schottky barrier or the SiO$_2$ dielectric formed by plasma-enhanced chemical-vapor-deposition(PECVD).

cond-mat.mes-hall↗

arXiv2005

Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well

The apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure with mobility μ=1.9 x 10^5 cm^2/Vs at density n=1.45 x 10^{11} cm^{-2}. The critical density, at which the thermal coefficient of low T resistivity changes sign, is ~ 0.32 x 10^{11} cm^{-2}, so far the lowest observed in the Si 2D systems. In-plane magnetoresistance study was carried out in the higher density range where the 2DES shows the metallic-like behavior. It is observed that the in-plane magnetoresistance first increases as ~ B_{ip}^2 and then saturates to a finite value ρ(B_c) for B_{ip} > B_c. The full spin-polarization field B_c decreases monotonically with n but appears to saturate to a finite value as n approaches zero. Furthermore, ρ(B_c)/ρ(0) ~ 1.8 for all the densities ranging from 0.35 x 10^{11} to 1.45 x 10^{11} cm^{-2} and, when plotted versus B_{ip}/B_c, collapses onto a single curve.

cond-mat.mes-hall↗

arXiv2005

Evidence for Skyrmion crystallization from NMR relaxation experiments

A resistively detected NMR technique was used to probe the two-dimensional electron gas in a GaAs/AlGaAs quantum well. The spin-lattice relaxation rate $(1/T_{1})$ was extracted at near complete filling of the first Landau level by electrons. The nuclear spin of $^{75}$As is found to relax much more efficiently with $T\to 0$ and when a well developed quantum Hall state with $R_{xx}\simeq 0$ occurs. The data show a remarkable correlation between the nuclear spin relaxation and localization. This suggests that the magnetic ground state near complete filling of the first Landau level may contain a lattice of topological spin texture, i.e. a Skyrmion crystal.

cond-mat.mes-hall↗

arXiv2004

Competition Between Fractional Quantum Hall Liquid, Bubble and Wigner Crystal Phases in the Third Landau Level

Magnetotransport measurements were performed in a ultra-high mobility GaAs/AlGaAs quantum well of density $\sim 3.0 \times 10^{11}$ $cm^{-2}$. The temperature dependence of the magnetoresistance $R_{xx}$ was studied in detail in the vicinity of $ν={9/2}$. In particular, we discovered new minima in $R_{xx}$ at filling factor $ν\simeq 4{1/5}$ and $4{4/5}$, but only at intermediate temperatures $80\lesssim T\lesssim 120$ mK. We interpret these as evidence for a fractional quantum Hall liquid forming in the N=2 Landau level and competing with bubble and Wigner crystal phases favored at lower temperatures. Our data suggest that a magnetically driven insulator-insulator quantum phase transition occurs between the bubble and Wigner crystal phases at T=0.

cond-mat.mes-hall↗

arXiv2004

Tilt Induced Localization and Delocalization in the Second Landau Level

We have investigated the behavior of electronic phases of the second Landau level under tilted magnetic fields. The fractional quantum Hall liquids at $ν=$2+1/5 and 2+4/5 and the solid phases at $ν=$2.30, 2.44, 2.57, and 2.70 are quickly destroyed with tilt. This behavior can be interpreted as a tilt driven localization of the 2+1/5 and 2+4/5 fractional quantum Hall liquids and a delocalization through melting of solid phases in the top Landau level, respectively. The evolution towards the classical Hall gas of the solid phases is suggestive of antiferromagnetic ordering.

cond-mat.mes-hall↗

arXiv2004

Coulomb Drag near the metal-insulator transition in two-dimensions

We studied the drag resistivity between dilute two-dimensional hole systems, near the apparent metal-insulator transition. We find the deviations from the $T^{2}$ dependence of the drag to be independent of layer spacing and correlated with the metalliclike behavior in the single layer resistivity, suggesting they both arise from the same origin. In addition, layer spacing dependence measurements suggest that while the screening properties of the system remain relatively independent of temperature, they weaken significantly as the carrier density is reduced. Finally, we demonstrate that the drag itself significantly enhances the metallic $T$ dependence in the single layer resistivity.

cond-mat.mes-hall↗

arXiv2004

Microwave resonance of the reentrant insulating quantum Hall phases in the 1st excited Landau Level

We present measurements of the real diagonal microwave conductivity of the reentrant insulating quantum Hall phases in the first excited Landau level at temperatures below 50 mK. A resonance is detected around filling factor $ν=2.58$ and weaker frequency dependence is seen at $ν=2.42$ and 2.28. These measurements are consistent with the formation of a bubble phase crystal centered around these $ν$ at very low temperatures.

cond-mat.mes-hall↗

arXiv2004

Transition from a fractional quantum Hall liquid to an electron solid at Landau level filling nu = 1/3 in tilted magnetic fields

We have observed in a low density two-dimensional hole system (2DHS) of extremely high quality (with hole density p=1.6x10^{10} cm^{-2} and mobility μ=0.8x10^6 cm^2/Vs) that, as the 2DHS is continuously tilted with respect to the direction of the magnetic field, the ν=1/3 fractional quantum Hall effect (FQHE) state is weakened and its magnetoresistivity rises from ~ 0.4 kohm/square in the normal orientation to ~ 180 kohm/square at tilt angle θ\~ 80 degrees. We attribute this phenomenon to the transition of the 2DHS from the FQHE liquid state to the pinned Wigner solid state, and argue that its origin is the strong coupling of subband Landau levels under the tilted magnetic fields.

cond-mat.mes-hall↗

arXiv2004

Magnetic Field Induced Insulating Phases at Large $r_s$

Exploring a backgated low density two-dimensional hole sample in the large $r_s$ regime we found a surprisingly rich phase diagram. At the highest densities, beside the $ν=1/3$, 2/3, and 2/5 fractional quantum Hall states, we observe both of the previously reported high field insulating and reentrant insulating phases. As the density is lowered, the reentrant insulating phase initially strengthens, then it unexpectedly starts weakening until it completely dissapears. At the lowest densities the terminal quantum Hall state moves from $ν=1/3$ to $ν=1$. The intricate behavior of the insulating phases can be explained by a non-monotonic melting line in the $ν$-$r_s$ phase space.

cond-mat.mes-hall↗

arXiv2004

Symmetries of the Resistance of Mesoscopic Samples in the Quantum Hall Regime

The symmetry properties of the resistance of mesoscopic samples in the quantum Hall regime are investigated. In addition to the reciprocity relation, our samples obey new symmetries, that relate resistances measured with different contact configurations. Different kinds of symmetries are identified, depending on whether the magnetic field value is such that the system is above, or below, a quantum Hall transition. Related symmetries have recently been reported for macroscopic samples in the quantum Hall regime by Ponomarenko {\it et al.} (Solid State Commun. {\bf 130}, 705 (2004)), and Karmakar {\it et al.} (Preprint cond-mat/0309694).

cond-mat.mes-hall↗

arXiv2004

AC Magnetotransport in Reentrant Insulating Phases of Two-dimensional Electrons near 1/5 and 1/3 Landau fillings

We have measured high frequency magnetotransport of a high quality two-dimensional electron system (2DES) near the reentrant insulating phase (RIP) at Landau fillings ($ν$) between 1/5 and 2/9. The magneto\textit{conductivity} in the RIP has resonant behavior around 150 MHz, showing a \textit{peak} at $ν$$\sim$0.21. Our data support the interpretation of the RIP as due to some pinned electron solid. We have also investigated a narrowly confined 2DES recently found to have a RIP at 1/3$<$$ν$$<$1/2 and we have revealed features, not seen in DC transport, that suggest some intriguing interplay between the 1/3 FQHE and RIP.

cond-mat.mes-hall↗

arXiv2004

Evidence for Two Different Solid Phases of Two Dimensional Electrons in High Magnetic Fields

We have performed RF spectroscopy on very high quality two dimensional electron systems in the high magnetic field insulating phase, usually associated with a Wigner solid (WS) pinned by disorder. We have found two different resonances in the frequency dependent real diagonal conductivity spectrum and we interpret them as coming from \textit{two} different pinned solid phases (labeled as "WS-A" and "WS-B"). The resonance of WS-A is observable for Landau level filling $ν$$<$2/9 (but absent around the $ν$=1/5 fractional quantum Hall effect (FQHE)); it then \textit{crosses over} for $ν$$<$0.18 to the different WS-B resonance which dominates the spectrum at $ν$$<$0.125. Moreover, WS-A resonance is found to show dispersion with respect to the size of transmission line, indicating that WS-A has a large correlation length (exceeding $\sim$100 $μ$m); in contrast no such behavior is found for WS-B. We suggest that quantum correlations such as those responsible for FQHE may play an important role in giving rise to such different solids.

cond-mat.str-el↗

arXiv2004

Spin Polarization Dependence of the Coulomb Drag at Large $r_{s}$

We find that the temperature dependence of the drag resistivity ($ρ_{D}$) between two dilute two-dimensional hole systems exhibits an unusual dependence upon spin polarization. Near the apparent metal-insulator transition, the temperature dependence of the drag, given by $T^α$, weakens with the application of a parallel magnetic field ($B_{||}$), with $α$ saturating at half its zero field value for $B_{||} > B^{*}$, where $B^{*}$ is the polarization field. Furthermore, we find that $α$ is roughly 2 at the parallel field induced metal-insulator transition, and that the temperature dependence of $ρ_{D}/T^{2}$ at different $B_{||}$ looks strikingly similar to that found in the single layer resistivity. In contrast, at higher densities, far from the zero field transition, the temperature dependence of the drag is roughly independent of spin polarization, with $α$ remaining close to 2, as expected from a simple Fermi liquid picture.

cond-mat.mes-hall↗

arXiv2004

Electron correlation in the second Landau level; a competition between many, nearly degenerate quantum phases

At a very low temperature of 9mK, electrons in the 2nd Landau level of an extremely high mobility two-dimensional electron system exhibit a very complex electronic behavior. With varying filling factor, quantum liquids of different origins compete with several insulating phases leading to an irregular pattern in the transport parameters. We observe a fully developed $ν=2+2/5$ state separated from the even-denominator $ν=2+1/2$ state by an insulating phase and a $ν=2+2/7$ and $ν=2+1/5$ state surrounded by such phases. A developing plateau at $ν=2+3/8$ points to the existence of other even-denominator states.

cond-mat.mes-hall↗

arXiv2004

The Two-flux Composite Fermion Series of Fractional Quantum Hall States in Strained Si

Magnetotransport properties are investigated in a high-mobility two-dimensional electron system in the strained Si quantum well of a (100) Si_0.75Ge_0.25/Si/Si_0.75Ge_0.25 heterostructure, at temperatures down to 30mK and in magnetic fields up to 45T. We observe around ν=1/2 the two-flux composite fermion (CF) series of the fractional quantum Hall effect (FQHE) at ν=2/3, 3/5, 4/7, and at ν=4/9, 2/5, 1/3. Among these FQHE states, the ν=1/3, 4/7 and 4/9 states are seen for the first time in the Si/SiGe system. Interestingly, of the CF series, the 3/5 state is weaker than the nearby 4/7 state and the 3/7 state is conspicuously missing, resembling the observation in the integer quantum Hall effect regime that the ν=3 is weaker than the nearby ν=4 state. Our data indicate that the two-fold degeneracy of the CFs is lifted and an estimated valley splitting of ~1K.

cond-mat.mes-hall↗

arXiv2004

Possible observation of phase coexistence of the $ν=1/3$ fractional quantum Hall liquid and a solid

We have measured the magnetoresistance of a very low density and an extremely high quality two-dimensional hole system. With increasing magnetic field applied perpendicularly to the sample we observe the sequence of insulating, $ν=1/3$ fractional quantum Hall liquid, and insulating phases. In both of the insulating phases in the vicinity of the $ν=1/3$ filling the magnetoresistance has an unexpected oscillatory behavior with the magnetic field. These oscillations are not of the Shubnikov-de Haas type and cannot be explained by spin effects. They are most likely the consequence of the formation of a new electronic phase which is intermediate between the correlated Hall liquid and a disorder pinned solid.

cond-mat.mes-hall↗

arXiv2004

Evidence of a first order phase transition between Wigner crystal and Bubble Phases of 2D electrons in higher Landau levels

For filling factors $ν$ in the range between 4.16 and 4.28, we simultaneously detect {\it two} resonances in the real diagonal microwave conductivity of a two--dimensional electron system (2DES) at low temperature $T \approx 35$ mK. We attribute the resonances to Wigner crystal and Bubble phases of the 2DES in higher Landau Levels. For $ν$ below and above this range, only single resonances are observed. The coexistence of both phases is taken as evidence of a first order phase transition. We estimate the transition point as $ν=4.22$.

cond-mat.mes-hall↗

arXiv2003

Wigner crystalization about $ν$=3

We measure a resonance in the frequency dependence of the real diagonal conductivity, Re[$σ_{xx}$], near integer filling factor, $ν=3$. This resonance depends strongly on $ν$, with peak frequency $f_{pk} \approx 1.7$ GHz at $ν=3.04$ or 2.92 close to integer $ν$, but $f_{pk} \approx$ 600 MHz at $ν=3.19$ or 2.82, the extremes of where the resonance is visible. The dependence of $f_{pk}$ upon $n^*$, the density of electrons in the partially filled level, is discussed and compared with similar measurments by Chen {\it et al.}\cite{yong} about $ν=1$ and 2. We interpret the resonance as due to a pinned Wigner crystal phase with density $n^*$ about the $ν=3$ state.

cond-mat.mes-hall↗