arXiv subjects

Christopher J. Ciccarino

Publications and source records attributed to Christopher J. Ciccarino.

18 recordsLinked to original sources

arXiv2026

Spin dissymmetry in optical cavities

We introduce the spin dissymmetry factor, a measure of the spin-selectivity in the optical transition rate of quantum particles. This spin dissymmetry factor is valid locally, including at material interfaces and within optical cavities. We design and numerically demonstrate a metasurface optical cavity with three-fold rotational symmetry that maximizes spin dissymmetry, thereby maximizing the spin-selective radiative coupling of a cavity-coupled emitter. We also show the near-field and far-field response of spin and chiral dipoles to these cavities that preferentially enhance either spin or chirality. Our approach emphasizes the difference between spin and chirality in the near-field and reveals a compact parameter for designing more efficient quantum optical devices.

physics.app-ph↗

arXiv2025

Terahertz field-induced giant symmetry modulations in a van der Waals antiferromagnet

Strong-field terahertz (THz) excitations enable dynamic control over electronic, lattice and symmetry degrees of freedom in quantum materials. Here, we uncover pronounced terahertz-induced symmetry modulations and coherent phonon dynamics in the van der Waals antiferromagnet MnPS3, in which inversion symmetry is broken by its antiferromagnetic spin configuration. Time-resolved second harmonic generation measurements reveal long-lived giant oscillations in the antiferromagnetic phase, with amplitudes comparable to the equilibrium signal, driven by phonons involving percent-level atomic displacements relative to the equilibrium bond lengths. The temporal evolution of the rotational anisotropy patterns indicate a dynamic breaking of mirror symmetry, modulated by two vibrational modes at 1.7 THz and 4.5 THz, with the former corresponding to a hidden mode not observed in equilibrium spectroscopy. We show that these effects arise in part from a field-induced charge rearrangement mechanism that lowers the local crystal symmetry, and couples to the phonon modes. A long-lived field-driven response was uncovered with a complex THz polarization dependence which, in comparison to theory, indicates evidence for an antiferromagnetic-to-ferrimagnetic transition. Our results establish an effective field-tunable pathway for driving excitations otherwise weak in equilibrium, and for manipulating magnetism in low-dimensional materials via dynamical modulation of symmetry.

cond-mat.str-el↗

arXiv2025

Exciton-polaritons and exciton localization from a first-principles interacting Green's function formalism

Exciton-polaritons -- hybrid states of photons and excitons -- offer unique avenues for controlling electronic, optical, and chemical properties of materials. However, their modeling is mostly limited to formalisms that wash out atomistic details and many-body physics critical to describing real systems. Here, we present an ab initio Green's function formalism based on the Bethe-Salpeter equation (BSE) wherein exciton-polaritons naturally emerge through an attractive, dynamical electron-hole exchange interaction. In MgO and crystalline pentacene, this attractive interaction dramatically reduces exciton Bohr radii and increases, by one order of magnitude, transition dipole moments of exciton-polaritons. Our calculations are in good agreement with experimental polariton dispersions in wurtzite CdS, and allow one to capture how electronic and collective excitations in materials are qualitatively modified through polaritonic effects.

cond-mat.mtrl-sci↗

arXiv2024

Nontrivial Quantum Geometry and the Strength of Electron-Phonon Coupling

The coupling of electrons to phonons (electron-phonon coupling) is crucial for the existence of various phases of matter, in particular superconductivity and density waves. Here, we devise a theory that incorporates the quantum geometry of the electron bands into the electron-phonon coupling, demonstrating the crucial contributions of the Fubini-Study metric or its orbital selective version to the dimensionless electron-phonon coupling constant. We apply the theory to two materials, graphene and MgB$_2$ where the geometric contributions account for approximately 50\% and 90\% of the total electron-phonon coupling constant, respectively. The quantum geometric contributions in the two systems are further bounded from below by topological contributions. Our results suggest that the nontrivial electron band geometry/topology might favor superconductivity with relatively high critical temperature.

cond-mat.supr-con↗

arXiv2023

Reply to "Comment on 'Nontrivial Quantum Geometry and the Strength of Electron-Phonon Coupling', arXiv:2305.02340, J. Yu, C. J. Ciccarino, R. Bianco, I. Errea, P. Narang, B. A. Bernevig"

This is our reply to "Comment on 'Nontrivial Quantum Geometry and the Strength of Electron-Phonon Coupling', arXiv:2305.02340, J. Yu, C. J. Ciccarino, R. Bianco, I. Errea, P. Narang, B. A. Bernevig" by Prof. Pickett, which focuses on the MgB$_2$ part of our work. We show that the entirety of the criticism in Prof. Pickett's comment pertaining to our work (arXiv:2305.02340) is invalid.

cond-mat.supr-con↗

arXiv2023

Unconventional Nonlocal Relaxation Dynamics in a Twisted Graphene Moire Superlattice

The electronic and structural properties of atomically thin materials can be controllably tuned by assembling them with an interlayer twist. During this process, constituent layers spontaneously rearrange themselves in search of a lowest energy configuration. Such relaxation phenomena can lead to unexpected and novel material properties. Here, we study twisted double trilayer graphene (TDTG) using nano-optical and tunneling spectroscopy tools. We reveal a surprising optical and electronic contrast, as well as a stacking energy imbalance emerging between the moiré domains. We attribute this contrast to an unconventional form of lattice relaxation in which an entire graphene layer spontaneously shifts position during fabrication. We analyze the energetics of this transition and demonstrate that it is the result of a non-local relaxation process, in which an energy gain in one domain of the moire lattice is paid for by a relaxation that occurs in the other.

cond-mat.mes-hall↗

arXiv2021

Capturing 3D atomic defects and phonon localization at the 2D heterostructure interface

The 3D local atomic structures and crystal defects at the interfaces of heterostructures control their electronic, magnetic, optical, catalytic and topological quantum properties, but have thus far eluded any direct experimental determination. Here we determine the 3D local atomic positions at the interface of a MoS2-WSe2 heterojunction with picometer precision and correlate 3D atomic defects with localized vibrational properties at the epitaxial interface. We observe point defects, bond distortion, atomic-scale ripples and measure the full 3D strain tensor at the heterointerface. By using the experimental 3D atomic coordinates as direct input to first principles calculations, we reveal new phonon modes localized at the interface, which are corroborated by spatially resolved electron energy-loss spectroscopy. We expect that this work will open the door to correlate structure-property relationships of a wide range of heterostructure interfaces at the single-atom level.

cond-mat.mtrl-sci↗

arXiv2020

Hybridized defects in solid-state materials as artificial molecules

Two-dimensional materials can be crafted with structural precision approaching the atomic scale, enabling quantum defects-by-design. These defects are frequently described as artificial atoms and are emerging optically-addressable spin qubits. However, interactions and coupling of such artificial atoms with each other, in the presence of the lattice, is remarkably underexplored. Here we present the formation of artificial molecules in solids, introducing a new degree of freedom in control of quantum optoelectronic materials. Specifically, in monolayer hexagonal boron nitride as our model system, we observe configuration- and distance-dependent dissociation curves and hybridization of defect orbitals within the bandgap into bonding and antibonding orbitals, with splitting energies ranging from $\sim$ 10 meV to nearly 1 eV. We calculate the energetics of $cis$ and $trans$ out-of-plane defect pairs CH$_\textrm{B}$-CH$_\textrm{B}$ against an in-plane defect pair C$_\textrm{B}$-C$_\textrm{B}$ and find that in-plane defect pair interacts more strongly than out-of-plane pairs. We demonstrate an application of this chemical degree of freedom by varying the distance between C$_\textrm{B}$ and V$_\textrm{N}$ of C$_\textrm{B}$V$_\textrm{N}$ and observe changes in the predicted peak absorption wavelength from the visible to the near-infrared spectral band. We envision leveraging this chemical degree of freedom of defect complexes to precisely control and tune defect properties towards engineering robust quantum memories and quantum emitters for quantum information science.

quant-ph↗

arXiv2020

Deep subwavelength thermal switch via resonant coupling in monolayer hexagonal boron nitride

Unlike the electrical conductance that can be widely modulated within the same material even in deep nanoscale devices, tuning the thermal conductance within a single material system or nanostructure is extremely challenging and requires a large-scale device. This prohibits the realization of robust ON/OFF states in switching the flow of thermal currents. Here, we present the theory of a thermal switch based on resonant coupling of three photonic resonators, in analogy to the field-effect electronic transistor composed of a source, gate, and drain. As a material platform, we capitalize on the extreme tunability and low-loss resonances observed in the dielectric function of monolayer hexagonal boron nitride (hBN) under controlled strain. We derive the dielectric function of hBN from first principles, including the phonon-polariton linewidths computed by considering phonon isotope and anharmonic phonon-phonon scattering. Subsequently, we propose a strain-controlled hBN-based thermal switch that modulates thermal conductance by more than an order of magnitude, corresponding to an ON/OFF contrast ratio of 98%, in a deep subwavelength nanostructure.

cond-mat.mes-hall↗

arXiv2020

Dynamic modulation of phonon-assisted transitions in quantum defects in monolayer transition-metal dichalcogenide semiconductors

Quantum localization via atomic point defects in semiconductors is of significant fundamental and technological importance. Quantum defects in monolayer transition-metal dichalcogenide semiconductors have been proposed as stable and scalable optically-addressable spin qubits. Yet, the impact of strong spin-orbit coupling on their dynamical response, for example under optical excitation, has remained elusive. In this context, we study the effect of spin-orbit coupling on the electron-phonon interaction in a single chalcogen vacancy defect in monolayer transition metal dichalcogenides, molybdenum disulfide (MoS$_2$) and tungsten disulfide (WS$_2$). From ab initio electronic structure theory calculations, we find that spin-orbit interactions tune the magnitude of the electron-phonon coupling in both optical and charge-state transitions of the defect, modulating their respective efficiencies. This observation opens up a promising scheme of dynamically modulating material properties to tune the local behavior of a quantum defect.

cond-mat.mtrl-sci↗

arXiv2020

Strong Spin-Orbit Quenching via the Product Jahn-Teller Effect in Neutral Group IV Artificial Atom Qubits in Diamond

Artificial atom qubits in diamond have emerged as leading candidates for a range of solid-state quantum systems, from quantum sensors to repeater nodes in memory-enhanced quantum communication. Inversion-symmetric group IV vacancy centers, comprised of Si, Ge, Sn and Pb dopants, hold particular promise as their neutrally charged electronic configuration results in a ground-state spin triplet, enabling long spin coherence above cryogenic temperatures. However, despite the tremendous interest in these defects, a theoretical understanding of the electronic and spin structure of these centers remains elusive. In this context, we predict the ground- and excited-state properties of the neutral group IV color centers from first principles. We capture the product Jahn-Teller effect found in the excited state manifold to second order in electron-phonon coupling, and present a non-perturbative treatment of the effect of spin-orbit coupling. Importantly, we find that spin-orbit splitting is strongly quenched due to the dominant Jahn-Teller effect, with the lowest optically-active $^3E_u$ state weakly split into $m_s$-resolved states. The predicted complex vibronic spectra of the neutral group IV color centers are essential for their experimental identification and have key implications for use of these systems in quantum information science.

quant-ph↗

arXiv2019

Low-temperature electron-phonon interaction of quantum emitters in hexagonal Boron Nitride

Quantum emitters based on atomic defects in layered hexagonal Boron Nitride (hBN) have emerged as promising solid state 'artificial atoms' with atom-like photophysical and quantum optoelectronic properties. Similar to other atom-like emitters, defect-phonon coupling in hBN governs the characteristic single-photon emission and provides an opportunity to investigate the atomic and electronic structure of emitters as well as the coupling of their spin- and charge-dependent electronic states to phonons. Here, we investigate these questions using photoluminescence excitation (PLE) experiments at T=4K on single photon emitters in multilayer hBN grown by chemical vapor deposition. By scanning up to 250 meV from the zero phonon line (ZPL), we can precisely measure the emitter's coupling efficiency to different phonon modes. Our results show that excitation mediated by the absorption of one in-plane optical phonon increases the emitter absorption probability ten-fold compared to that mediated by acoustic or out-of-plane optical phonons. We compare these measurements against theoretical predictions by first-principles density-functional theory of four defect candidates, for which we calculate prevalent charge states and their spin-dependent coupling to bulk and local phonon modes. Our work illuminates the phonon-coupled dynamics in hBN quantum emitters at cryogenic temperature, with implications more generally for mesoscopic quantum emitter systems in 2D materials and represents possible applications in solid-state quantum technologies.

cond-mat.mes-hall↗

arXiv2019

Correlating 3D atomic defects and electronic properties of 2D materials with picometer precision

The exceptional electronic, optical and chemical properties of two-dimensional materials strongly depend on the 3D atomic structure and crystal defects. Using Re-doped MoS2 as a model, here we develop scanning atomic electron tomography (sAET) to determine the 3D atomic positions and crystal defects such as dopants, vacancies and ripples with a precision down to 4 picometers. We measure the 3D bond distortion and local strain tensor induced by single dopants for the first time. By directly providing experimental 3D atomic coordinates to density functional theory (DFT), we obtain more truthful electronic band structures than those derived from conventional DFT calculations relying on relaxed 3D atomic models, which is confirmed by photoluminescence measurements. We anticipate that sAET is not only generally applicable to the determination of the 3D atomic coordinates of 2D materials, heterostructures and thin films, but also could transform ab initio calculations by using experimental 3D atomic coordinates as direct input to better predict and discover new physical, chemical and electronic properties.

cond-mat.mtrl-sci↗

arXiv2019

Group III Quantum Defects in Diamond are Stable Spin-1 Color Centers

Color centers in diamond have emerged as leading solid-state artificial atoms for a range of quantum technologies, from quantum sensing to quantum networks. Concerted research activities are now underway to identify new color centers that combine stable spin and optical properties of the nitrogen vacancy (NV$^-$) with the spectral stability of the silicon vacancy (SiV$^-$) centers in diamond, with recent research identifying other group IV color centers with superior properties. In this Letter, we investigate a new class of diamond quantum emitters from first principles, the group III color centers, which we show to be thermodynamically stable in a spin-1, electric-field insensitive structure. From ab initio electronic structure methods, we characterize the product Jahn-Teller (pJT) effect present in the excited state manifold of these group III color centers, where we capture symmetry-breaking distortions associated with strong electron-phonon coupling. These predictions can guide experimental identification of group III vacancy centers and their use in applications in quantum information science and technology.

quant-ph↗

arXiv2019

Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated cathodoluminescence, photoluminescence, and strain mapping

Single photon emitters (SPEs) in solids have emerged as promising candidates for quantum photonic sensing, communications, and computing. Defects in hexagonal boron nitride (hBN) exhibit high-brightness, room-temperature quantum emission, but their large spectral variability and unknown local structure significantly challenge their technological utility. Here, we directly correlate hBN quantum emission with the material's local strain using a combination of photoluminescence (PL), cathodoluminescence (CL) and nano-beam electron diffraction. Across 40 emitters and 15 samples, we observe zero phonon lines(ZPLs) in PL and CL ranging from 540-720 nm. CL mapping reveals that multiple defects and distinct defect species located within an optically-diffraction-limited region can each contribute to the observed PL spectra. Local strain maps indicate that strain is not required to activate the emitters and is not solely responsible for the observed ZPL spectral range. Instead, four distinct defect classes are responsible for the observed emission range. One defect class has ZPLs near 615 nm with predominantly matched CL-PL responses; it is not a strain-tuned version of another defect class with ZPL emission centered at 580 nm. A third defect class at 650 nm has low visible-frequency CL emission; and a fourth defect species centered at 705 nm has a small, ~10 nm shift between its CL and PL peaks. All studied defects are stable upon both electron and optical irradiation. Our results provide an important foundation for atomic-scale optical characterization of color centers, as well as a foundation for engineering defects with precise emission properties.

cond-mat.mtrl-sci↗

arXiv2019

A Theoretical Investigation of Charge Density Wave Instability in CuS$_2$

The existence of a charge density wave (CDW) in transition metal dichalcogenide CuS$_2$ has remained undetermined since its first experimental synthesis nearly 50 years ago. Despite conflicting experimental literature regarding its low temperature structure, there exists no theoretical study of the phonon properties and lattice stability of this material. By studying the first-principles electronic structure and phonon properties of CuS$_2$ at various electronic temperatures, we identify temperature-sensitive soft phonon modes which unveil a previously unreported Kohn anomaly at approximately 100K. Variation of the electronic temperature shows the presence of two distinct phases, characterized at low temperature by a $2\times2\times2$ periodic charge modulation associated with the motion of the S$_2$ dimers. Investigation of the Fermi surface presents a potential Fermi surface nesting vector related to the location of the Kohn anomaly and observed band splittings in the unfolded bandstructure. The combination of these results suggests a strong possibility of CDW order in CuS$_2$. Further study of CuS$_2$ in monolayer form finds no evidence of a CDW phase, as the identified bulk periodic distortions cannot be realized in 2D. This behavior sets this material apart from other transition metal dichalcogenide materials, which exhibit a charge density wave phase down to the 2D limit. As CDW in TMDC materials is considered to compete with superconductivity, the lack of CDW in monolayer CuS$_2$ suggests the possibility of enhanced superconductivity relative to other transition metal dichalcogenides. Overall, our work identifies CuS$_2$ as a previously unrealized candidate to study interplay of superconductivity, CDW order, and dimensionality.

cond-mat.mes-hall↗

arXiv2018

Dynamics and Spin-Valley Locking Effects in Monolayer Transition Metal Dichalcogenides

Transition metal dichalcogenides have been the primary materials of interest in the field of valleytronics for their potential in information storage, yet the limiting factor has been achieving long valley decoherence times. We explore the dynamics of four monolayer TMDCs (MoS$_2$, MoSe$_2$, WS$_2$, WSe$_2$) using ab initio calculations to describe electron-electron and electron-phonon interactions. By comparing calculations which both omit and include relativistic effects, we isolate the impact of spin-resolved spin-orbit coupling on transport properties. In our work, we find that spin-orbit coupling increases carrier lifetimes at the valence band edge by an order of magnitude due to spin-valley locking, with a proportional increase in the hole mobility at room temperature. At temperatures of 50~K, we find intervalley scattering times on the order of 100 ps, with a maximum value ~140 ps in WSe$_2$. Finally, we calculate excited-carrier generation profiles which indicate that direct transitions dominate across optical energies, even for WSe$_2$ which has an indirect band gap. Our results highlight the intriguing interplay between spin and valley degrees of freedom critical for valleytronic applications. Further, our work points towards interesting quantum properties on-demand in transition metal dichalcogenides that could be leveraged via driving spin, valley and phonon degrees of freedom.

cond-mat.mes-hall↗

arXiv2018

Lead-Related Quantum Emitters in Diamond

We report on quantum emission from Pb-related color centers in diamond following ion implantation and high temperature vacuum annealing. First-principles calculations predict a negatively-charged Pb-vacancy center in a split-vacancy configuration, with a zero-phonon transition around 2.3 eV. Cryogenic photoluminescence measurements performed on emitters in nanofabricated pillars reveal several transitions, including a prominent doublet near 520 nm. The splitting of this doublet, 2 THz, exceeds that reported for other group-IV centers. These observations are consistent with the PbV center, which is expected to have the combination of narrow optical transitions and stable spin states, making it a promising system for quantum network nodes.

quant-ph↗