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Chenguang Fu

Publications and source records attributed to Chenguang Fu.

At least 19 recordsLinked to original sources

Pressure-induced Superconductivity in Thermoelectric Semiconductor Mg3Sb2

The intrinsic electronic structures of narrow bandgap thermoelectric (TE) materials serve as a platform for the investigation of coupling effects of quasi-particles under high pressure, enabling the exploration of emerging electronic and phonon transport, superconductivity, and topological transition. Here, we report the discovery of pressure-induced superconductivity in the TE semiconductor Mg3Sb2. Upon the increased pressure, the metallization occurs at 8.7 GPa, followed by a superconducting transition concomitant with a carrier-type crossover from p- to n-type. This phenomenon arises from a pressure-induced structural phase transition from the semiconducting P-3m1 to the metallic C2/m-I phase. The superconducting critical temperature (Tc) exhibits a dome-shaped pressure dependence, peaking at 3.3 K at 12.6 GPa. Combined theoretical calculations, high-pressure Raman spectroscopy, and X-ray diffraction (XRD) measurements reveal an additional structural transition above 20 GPa, yielding a distinct C2/m-II phase. Our findings establish the high-pressure phase diagram of Mg3Sb2, elucidate its pressure-dependent electronic properties, and provide valuable insights for future investigations of TE materials under high pressure.

cond-mat.supr-con

Large longitudinal and anomalous transverse Magneto-thermoelectric effect in kagome antiferromagnet FeGe

Topological Kagome magnets, characterized by nontrivial electronic band structures featuring flat band, Dirac cone and van Hove singularities, provide a new avenue for the realization of thermoelectric devices. Unlike the conventional longitudinal Seebeck effect, transverse thermoelectric (TE) effects like the Nernst effect have attracted growing interest due to their unique transverse geometry and potential advantages. Here, we report the observation of a significant transverse thermoelectric conductivity alpha A_zx of 15 A K-1m-1 at low temperatures, together with a pronounced anomalous Nernst effect in the Kagome antiferromagnet FeGe, which exhibits a charge density wave inside the antiferromagnetic (AFM) state. This value is the highest record among known AFM materials. Furthermore, the thermopower at 14 T increases by 102-104% around the canted-AFM (CAFM) transition temperature, Tcant, comparable to that of the well-known AFM thermoelectric materials. These effects are attributed to large Berry curvature arising from the non-collinear spin texture in FeGe, highlighting its potential for enhancing thermoelectric performance and its candidacy for magneto-TE applications in Kagome antiferromagnetic materials.

cond-mat.mtrl-sci

Frequency-resolved Raman Thermometry Analysis via a Multi-layer Heat Transfer Model for Bulk and Low-dimensional Materials

Raman thermometry is advantageous for measuring the thermal transport of low-dimensional materials due to its non-contact nature. Transient Raman methods have improved the accuracy of steady-state Raman thermometry by removing the need for accurate temperature calibration and laser absorption evaluation. However, current methods often resort to finite element analysis (FEA) to decipher the measured signals. This step is time-consuming and impedes its ubiquitous adaptation. In this work, we replace the FEA by fitting the transient-state Raman signal to a three-dimensional (3D) analytical heat transfer model for measuring the thermal conductivity of two bulk layered materials [i.e., molybdenum disulfide (MoS2) and bismuth selenide (Bi2Se3) crystals] and the interfacial thermal conductance (h) of CVD-grown MoS2 and molybdenum di-selenide (MoSe2) on quartz (SiO2). Our measured results agree reasonably well with literature and theoretical calculations. We also performed a quantitative sensitivity analysis to give insights on how to improve the measurement sensitivity. Our work provides an efficient way to process the data of transient-based Raman thermometry for high throughput measurements.

physics.app-ph

Giant phonon softening and avoided crossing in aliovalence-doped heavy-band thermoelectrics

Aliovalent doping has been adopted to optimize the electrical properties of semiconductors, while its impact on the phonon structure and propagation is seldom paid proper attention to. This work reveals that aliovalent doping can be much more effective in reducing the lattice thermal conductivity of thermoelectric semiconductors than the commonly employed isoelectronic alloying strategy. As demonstrated in the heavy-band NbFeSb system, a large reduction of 65% in the lattice thermal conductivity is achieved through only 10% aliovalent Hf-doping, compared to the 4 times higher isoelectronic Ta-alloying. It is elucidated that aliovalent doping introduces free charge carriers and enhances the screening, leading to the giant softening and deceleration of optical phonons. Moreover, the heavy dopant can induce the avoided-crossing of acoustic and optical phonon branches, further decelerating the acoustic phonons. These results highlight the significant role of aliovalent dopants in regulating the phonon structure and suppressing the phonon propagation of semiconductors.

cond-mat.mtrl-sci

Doping as a tuning mechanism for magneto-thermoelectric effects to improve zT in polycrystalline NbP

Weyl semimetals combine topological and semimetallic effects, making them candidates for interesting and effective thermoelectric transport properties. Here, we present experimental results on polycrystalline NbP, demonstrating the simultaneous existence of a large Nernst effect and a large magneto-Seebeck effect, which is typically not observed in a single material at the same temperature. We compare transport results from two polycrystalline samples of NbP with previously published work, observing a shift in the temperature at which the maximum Nernst and magneto-Seebeck thermopowers occur, while still maintaining thermopowers of similar magnitude. Theoretical modeling shows how doping strongly alters both the Seebeck and Nernst magneto-thermopowers by shifting the temperature-dependent chemical potential, and the corresponding calculations provide a consistent interpretation of our results. Thus, we offer doping as a tuning mechanism for shifting magneto-thermoelectric effects to temperatures appropriate for device applications, improving zT at desirable operating temperature. Furthermore, the simultaneous presence of both a large Nernst and magneto-Seebeck thermopower is uncommon and offers unique device advantages if the thermopowers are used additively. Here, we also propose a unique thermoelectric device which would collectively harness the large Nernst and magneto-Seebeck thermopowers to greatly enhance the output and zT of conventional thermoelectric devices.

cond-mat.mtrl-sci

Dopant-segregation to grain boundaries controls electrical conductivity of n-type NbCo(Pt)Sn half-Heusler alloy mediating thermoelectric performance

Science-driven design of future thermoelectric materials requires a deep understanding of the fundamental relationships between microstructure and transport properties. Grain boundaries in polycrystalline materials influence the thermoelectric performance through the scattering of phonons or the trapping of electrons due to space-charge effects. Yet, the current lack of careful investigations on grain boundary-associated features hinders further optimization of properties. Here, we study n-type NbCo1-xPtxSn half-Heusler alloys, which were synthesized by ball milling and spark plasma sintering (SPS). Post-SPS annealing was performed on one sample, leading to improved low-temperature electrical conductivity. The microstructure of both samples was examined by electron microscopy and atom probe tomography. The grain size increases from ~230 nm to ~2.38 {\mu}m upon annealing. Pt is found within grains and at grain boundaries, where it locally reduces the resistivity, as assessed by in situ four-point-probe electrical conductivity measurement. Our work showcases the correlation between microstructure and electrical conductivity, providing opportunities for future microstructural optimization by tuning the chemical composition at grain boundaries.

cond-mat.mtrl-sci

Large topological Hall effect in an easy-cone ferromagnet (Cr0.9B0.1)Te

The Berry phase understanding of electronic properties has attracted special interest in condensed matter physics, leading to phenomena such as the anomalous Hall effect and the topological Hall effect. A non-vanishing Berry phase, induced in momentum space by the band structure or in real space by a non-coplanar spin structure, is the origin of both effects. Here, we report a sign conversion of the anomalous Hall effect and a large topological Hall effect in (Cr0.9B0.1)Te single crystals. The spin reorientation from an easy-axis structure at high temperature to an easy-cone structure below 140 K leads to conversion of the Berry curvature, which influences both, anomalous and topological, Hall effects in the presence of an applied magnetic field and current. We compare and summarize the topological Hall effect in four categories with different mechanisms and have a discussion into the possible artificial fake effect of topological Hall effect in polycrystalline samples, which provides a deep understanding of the relation between spin structure and Hall properties.

cond-mat.mtrl-sci

Large anomalous Hall effect in the kagome ferromagnet LiMn$_6$Sn$_6$

Kagome magnets are believed to have numerous exotic physical properties due to the possible interplay between lattice geometry, electron correlation and band topology. Here, we report the large anomalous Hall effect in the kagome ferromagnet LiMn$_6$Sn$_6$, which has a Curie temperature of 382 K and easy plane along with the kagome lattice. At low temperatures, unsaturated positive magnetoresistance and opposite signs of ordinary Hall coefficient for $\rho_{xz}$ and $\rho_{yx}$ indicate the coexistence of electrons and holes in the system. A large intrinsic anomalous Hall conductivity of 380 $\Omega^{-1}$ cm$^{-1}$, or 0.44 $e^2/h$ per Mn layer, is observed in $\sigma_{xy}^A$. This value is significantly larger than those in other $R$Mn$_6$Sn$_6$ ($R$ = rare earth elements) kagome compounds. Band structure calculations show several band crossings, including a spin-polarized Dirac point at the K point, close to the Fermi energy. The calculated intrinsic Hall conductivity agrees well with the experimental value, and shows a maximum peak near the Fermi energy. We attribute the large anomalous Hall effect in LiMn$_6$Sn$_6$ to the band crossings closely located near the Fermi energy.

cond-mat.mtrl-sci

New highly-anisotropic Rh-based Heusler compound for magnetic recording

The development of high-density magnetic recording media is limited by the superparamagnetism in very small ferromagnetic crystals. Hard magnetic materials with strong perpendicular anisotropy offer stability and high recording density. To overcome the difficulty of writing media with a large coercivity, heat assisted magnetic recording (HAMR) has been developed, rapidly heating the media to the Curie temperature Tc before writing, followed by rapid cooling. Requirements are a suitable Tc, coupled with anisotropic thermal conductivity and hard magnetic properties. Here we introduce Rh2CoSb as a new hard magnet with potential for thin film magnetic recording. A magnetocrystalline anisotropy of 3.6 MJm-3 is combined with a saturation magnetization of {\mu}0Ms = 0.52 T at 2 K (2.2 MJm-3 and 0.44 T at room-temperature). The magnetic hardness parameter of 3.7 at room temperature is the highest observed for any rare-earth free hard magnet. The anisotropy is related to an unquenched orbital moment of 0.42 {\mu}B on Co, which is hybridized with neighbouring Rh atoms with a large spin-orbit interaction. Moreover, the pronounced temperature-dependence of the anisotropy that follows from its Tc of 450 K, together with a high thermal conductivity of 20 Wm-1K-1, makes Rh2CoSb a candidate for development for heat assisted writing with a recording density in excess of 10 Tb/in2.

cond-mat.mtrl-sci

Growth and transport properties of Mg3X2 (X = Sb, Bi) single crystals

The discovery of high thermoelectric performance in n-type polycrystalline Mg3(Sb,Bi)2 based Zintl compounds has ignited intensive research interest. However, some fundamental questions concerning the anisotropic transport properties and the origin of intrinsically low thermal conductivity are still elusive, requiring the investigation of single crystals. In this work, high-quality p-type Mg3Sb2 and Mg3Bi2 single crystals have been grown by using a self-flux method. The electrical resistivity \r{ho} of Mg3Bi2 single crystal displays an anisotropy with \r{ho} in-plane twice larger than out-of-plane. The low-temperature heat capacity and lattice thermal conductivity of Mg3Sb2 and Mg3Bi2 single crystals have been investigated by using the Debye-Callaway model, from which the existence of low-lying vibration mode could be concluded. Large Gr\"uneisen parameters and strong anharmonicity are found responsible for the intrinsically low thermal conductivity. Moreover, grain boundary scattering does not contribute significantly to suppress the lattice thermal conductivity of polycrystalline Mg3Sb2. Our results provide insights into the intrinsic transport properties of Mg3X2 and could pave a way to realize enhanced thermoelectric performance in single-crystalline Mg3X2-based Zintl compounds.

cond-mat.mtrl-sci

Large Nernst Power Factor over a Broad Temperature Range in Polycrystalline Weyl Semimetal NbP

The discovery of topological materials has provided new opportunities to exploit advanced materials for heat-to-electricity energy conversion as they share many common characteristics with thermoelectric materials. In this work, we report the magneto-thermoelectric properties and Nernst effect of the topological Weyl semimetal NbP. We find that polycrystalline, bulk NbP shows a significantly larger Nernst thermopower than its conventional thermopower under magnetic field. As a result, a maximum Nernst power factor of ~ 35*10-4 Wm-1K-2 is achieved at 9 T and 136 K, which is 4 times higher than its conventional power factor and is also comparable to that of state-of-the-art thermoelectrics. Moreover, the Nernst power factor maintains relatively large value over a broad temperature range. These results highlight that the enhancement of thermoelectric performance can be achieved in topological semimetals based on the Nernst effect and transverse transport.

cond-mat.mtrl-sci

Synergistically creating sulfur vacancies in semimetal-supported amorphous MoS2 for efficient hydrogen evolution

The presence of elemental vacancies in materials is inevitable according to statistical thermodynamics, which will decide the chemical and physical properties of the investigated system. However, the controlled manipulation of vacancies for specific applications is a challenge. Here we report a facile method for creating large concentrations of S vacancies in the inert basal plane of MoS2 supported on semimetal CoMoP2. With a small applied potential, S atoms can be removed in the form of H2S due to the optimized free energy of formation. The existence of vacancies favors electron injection from the electrode to the active site by decreasing the contact resistance. As a consequence, the activity is increased by 221 % with the vacancy-rich MoS2 as electrocatalyst for hydrogen evolution reaction (HER). A small overpotential of 75 mV is needed to deliver a current density of 10 mA cm-2, which is considered among the best values achieved for MoS2. It is envisaged that this work may provide a new strategy for utilizing the semimetal phase for structuring MoS2 into a multi-functional material.

cond-mat.mtrl-sci

In situ modification of delafossite type PdCoO2 bulk single crystal for reversible hydrogen sorption and fast hydrogen evolution

The observation of extraordinarily high conductivity in delafossite-type PdCoO2 is of great current interest, and there is some evidence that electrons behave like a fluid when flowing in bulk crystals of PdCoO2. Thus, this material is an ideal platform for the study of the electron transfer processes in heterogeneous reactions. Here, we report the use of bulk single crystal PdCoO2 as a promising electrocatalyst for hydrogen evolution reactions (HERs). An overpotential of only 31 mV results in a current density of 10 mA cm^(-2), accompanied by high long-term stability. We have precisely determined that the crystal surface structure is modified after electrochemical activation with the formation of strained Pd nanoclusters in the surface layer. These nanoclusters exhibit reversible hydrogen sorption and desorption, creating more active sites for hydrogen access. The bulk PdCoO2 single crystal with ultra-high conductivity, which acts as a natural substrate for the Pd nanoclusters, provides a high-speed channel for electron transfer

cond-mat.mtrl-sci

Zero-field Nernst effect in a ferromagnetic kagome-lattice Weyl-semimetal Co3Sn2S2

The discovery of magnetic topological semimetals recently attracted significant attention in the field of topology and thermoelectrics. In a thermoelectric device based on the Nernst geometry, an external magnet is required as an integral part. We report a zero-field Nernst effect in a newly discovered hard-ferromagnetic kagome-lattice Weyl-semimetal Co3Sn2S2. A maximum Nernst thermopower of 3 microvolt/K at 80 K in zero field is achieved in this magnetic Weyl-semimetal. Our results demonstrate the possibility of application of topological hard magnetic semimetals for low-power thermoelectric devices based on the Nernst effect and are thus valuable for the comprehensive understanding of transport properties in this class of materials.

cond-mat.mtrl-sci

Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials

Chemical doping is one of the most important strategies for tuning electrical properties of semiconductors, particularly thermoelectric materials. Generally, the main role of chemical doping lies in optimizing the carrier concentration, but there can potentially be other important effects. Here, we show that chemical doping plays multiple roles for both electron and phonon transport properties in half-Heusler thermoelectric materials. With ZrNiSn-based half-Heusler materials as an example, we use high-quality single and polycrystalline crystals, various probes, including electrical transport measurements, inelastic neutron scattering measurement, and first-principles calculations, to investigate the underlying electron-phonon interaction. We find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon scattering, but has negligible influence on lattice thermal conductivity. Furthermore, it is possible to establish a carrier scattering phase diagram, which can be used to select reasonable strategies for optimization of the thermoelectric performance.

cond-mat.mtrl-sci

Surface states in bulk single crystal of topological semimetal Co$_3$Sn$_2$S$_2$ towards water oxidation

The band inversion in topological phase matters bring exotic physical properties such as the emergence of a topologically protected surface states. They strongly influence the surface electronic structures of the investigated materials and could serve as a good platform to gain insight into the catalytic mechanism of surface reactions. Here we synthesized high-quality bulk single crystals of the topological semimetal Co$_3$Sn$_2$S$_2$. We found that at room temperature, Co$_3$Sn$_2$S$_2$ naturally hosts the band structure of a topological semimetal. This guarantees the existence of robust surface states from the Co atoms. Bulk single crystal of Co$_3$Sn$_2$S$_2$ exposes their Kagome lattice that constructed by Co atoms and have high electrical conductivity. They serves as catalytic centers for oxygen evolution process (OER), making bonding and electron transfer more efficient due to the partially filled $e_g$ orbital. The bulk single crystal exhibits outstanding OER catalytic performance, although the surface area is much smaller than that of Co-based nanostructured catalysts. Our findings emphasize the importance of tailoring topological non-trivial surface states for the rational design of high-activity electrocatalysts.

cond-mat.mtrl-sci

Anisotropic electrical and thermal magnetotransport in the magnetic semimetal GdPtBi

The half-Heusler rare-earth intermetallic GdPtBi has recently gained attention due to peculiar magnetotransport phenomena that have been associated with the possible existence of Weyl fermions, thought to arise from the crossings of spin-split conduction and valence bands. On the other hand, similar magnetotransport phenomena observed in other rare-earth intermetallics have often been attributed to the interaction of itinerant carriers with localized magnetic moments stemming from the $4f$-shell of the rare-earth element. In order to address the origin of the magnetotransport phenomena in GdPtBi, we performed a comprehensive study of the magnetization, electrical and thermal magnetoresistivity on two single-crystalline GdPtBi samples. In addition, we performed an analysis of the Fermi surface via Shubnikov-de Haas oscillations in one of the samples and compared the results to \emph{ab initio} band structure calculations. Our findings indicate that the electrical and thermal magnetotransport in GdPtBi cannot be solely explained by Weyl physics and is strongly influenced by the interaction of both itinerant charge carriers and phonons with localized magnetic Gd-ions and possibly also paramagnetic impurities.

cond-mat.mes-hall

Anomalous Nernst effect beyond the magnetization scaling relation in the ferromagnetic Heusler compound Co$_2$MnGa

Applying a temperature gradient in a magnetic material generates a voltage that is perpendicular to both the heat flow and the magnetization. This is the anomalous Nernst effect (ANE) which was thought to be proportional to the value of the magnetization for a long time. However, more generally, the ANE has been predicted to originate from a net Berry curvature of all bands near the Fermi level. Subsequently, a large anomalous Nernst thermopower has recently been observed in topological materials with no net magnetization but large net Berry curvature around E$_F$. These experiments clearly fall outside the scope of the conventional magnetization-model of the ANE, but a significant question remains: Can the value of the ANE in topological ferromagnets exceed the highest values observed in conventional ferromagnets? Here, we report a remarkably high anomalous Nernst thermopower value of ~6.0 \mu V/K at 1 T in the ferromagnetic topological Heusler compound Co$_2$MnGa at room temperature, which is around 7-times larger than any anomalous Nernst thermopower value ever reported for a conventional ferromagnet. Combined electrical, thermoelectric and first-principles calculations reveal that this high value of the ANE arises from a large net Berry curvature near the Fermi level associated with nodal lines and Weyl points.

cond-mat.mtrl-sci