arXiv subjects

Cheng Zhang

Publications and source records attributed to Cheng Zhang.

At least 523 records · Page 29Linked to original sources

arXiv2016

Inter-Battery Topic Representation Learning

In this paper, we present the Inter-Battery Topic Model (IBTM). Our approach extends traditional topic models by learning a factorized latent variable representation. The structured representation leads to a model that marries benefits traditionally associated with a discriminative approach, such as feature selection, with those of a generative model, such as principled regularization and ability to handle missing data. The factorization is provided by representing data in terms of aligned pairs of observations as different views. This provides means for selecting a representation that separately models topics that exist in both views from the topics that are unique to a single view. This structured consolidation allows for efficient and robust inference and provides a compact and efficient representation. Learning is performed in a Bayesian fashion by maximizing a rigorous bound on the log-likelihood. Firstly, we illustrate the benefits of the model on a synthetic dataset,. The model is then evaluated in both uni- and multi-modality settings on two different classification tasks with off-the-shelf convolutional neural network (CNN) features which generate state-of-the-art results with extremely compact representations.

cs.LG↗

arXiv2016

An asymptotic formula for the zeros of the deformed exponential function

We study the asymptotic representation for the zeros of the deformed exponential function $\sum\nolimits_{n = 0}^\infty {\frac1{n!}{q^{n(n - 1)/2}{x^n}}} $, $q\in (0,1)$. Indeed, we obtain an asymptotic formula for these zeros: \[x_n=- nq^{1-n}(1 + g(q)n^{-2}+o(n^{-2})),n\ge1,\] where $g(q)=\sum\nolimits_{k = 1}^\infty {σ(k){q^k}}$ is the generating function of the sum-of-divisors function $σ(k)$. This improves earlier results by Langley and Liu. The proof of this formula is reduced to estimating the sum of an alternating series, where the Jacobi's triple product identity plays a key role.

math.CA↗

arXiv2016

Improved critical eigenfunction restriction estimates on Riemannian surfaces with nonpositive curvature

We show that one can obtain improved $L^4$ geodesic restriction estimates for eigenfunctions on compact Riemannian surfaces with nonpositive curvature. We achieve this by adapting Sogge's strategy in proving improved critical $L^p$ estimates. We first combine the improved $L^2$ restriction estimate of Blair and Sogge and the classical improved $L^\infty$ estimate of Bérard to obtain an improved weak-type $L^4$ restriction estimate. We then upgrade this weak estimate to a strong one by using the improved Lorentz space estimate of Bak and Seeger. This estimate improves the $L^4$ restriction estimate of Burq, Gérard and Tzvetkov and Hu by a power of $(\log\logλ)^{-1}$. Moreover, in the case of compact hyperbolic surfaces, we obtain further improvements in terms of $(\logλ)^{-1}$ by applying the ideas from recent works of Chen, Sogge and Blair, Sogge. We are able to compute various constants that appeared in the work of Chen and Sogge explicitly, by proving detailed oscillatory integral estimates and lifting calculations to the universal cover $\mathbb H^2$.

math.AP↗

arXiv2016

Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe unveil high sensitivity and tunable responsivity to visible light. However, the device yield and the repeatability call for a further improvement of the 2D materials to render large-scale uniformity. Here we report a layer-by-layer growth of wafer-scale GaTe with a hole mobility of 28.4 cm2/Vs by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics, photoresponse with a maximum photoresponsivity of 2.74 A/W and a high photovoltaic external quantum efficiency up to 62%. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photo-images were acquired by the GaTe/Si photodiodes with a reasonable contrast and spatial resolution, demonstrating for the first time the potential of integrating the 2D materials with the silicon technology for novel optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2016

Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an atomically-sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In-situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly-efficient photodetector arrays were fabricated based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a relatively high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust with a response time of 60 us. Importantly, the device shows no sign of degradation after 1 million cycles of operation. Our study establishes a new approach to produce controllable, robust and large-area 2D heterostructures and presents a crucial step for further practical applications.

cond-mat.mes-hall↗

arXiv2016

Direct observation of Landau level resonance and mass generation in Dirac semimetal Cd3As2 thin films

Three-dimensional topological Dirac semimetals have hitherto stimulated unprecedented research interests as a new class of quantum materials. Breaking certain types of symmetries has been proposed to enable the manipulation of Dirac fermions; and that was soon realized by external modulations such as magnetic fields. However, an intrinsic manipulation of Dirac states, which is more efficient and desirable, remains a significant challenge. Here, we report a systematic study of quasi-particle dynamics and band evolution in Cd3As2 thin films with controlled Chromium (Cr) doping by both magneto-infrared spectroscopy and electrical transport. For the first time, we observe square-root-B relation of inter-Landau-level resonance in undoped Cd3As2 Dirac semimetal, an important signature of ultra-relativistic Dirac state inaccessible in previous optical experiments. A crossover from quantum to quasi-classical behavior makes it possible to directly probe the mass of Dirac fermions. Importantly, Cr doping allows for a Dirac mass acquisition and topological phase transition enabling a desired dynamic control of Dirac fermions. Corroborating with the density-functional theory calculations, we show that the mass generation is essentially driven by explicit C4 rotation symmetry breaking and the resultant Dirac gap engineering through Cr substitution for Cd atoms. The manipulation of the system symmetry and Dirac mass in Cd3As2 thin films provides a tuning knob to explore the exotic states stemming from the parent phase of Dirac semimetals.

cond-mat.mtrl-sci↗

arXiv2015

Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films

Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional (3D) analog of graphene with extraordinary carrier mobility, was predicted to be a 3D Dirac semimetal, a feature confirmed by recent experiments. However, most research so far has been focused on metallic bulk materials that are known to possess ultra-high mobility and giant magnetoresistance but limited carrier transport tunability. Here, we report on the first observation of a gate-induced transition from band conduction to hopping conduction in single-crystalline Cd3As2 thin films via electrostatic doping by solid electrolyte gating. The extreme charge doping enables the unexpected observation of p-type conductivity in a 50 nm-thick Cd3As2 thin film grown by molecular beam epitaxy. More importantly, the gate-tunable Shubnikov-de Haas (SdH) oscillations and the temperature-dependent resistance reveal a unique band structure and bandgap opening when the dimensionality of Cd3As2 is reduced. This is also confirmed by our first-principles calculations. The present results offer new insights towards nanoelectronic and optoelectronic applications of Dirac semimetals in general, and provide new routes in the search for the intriguing quantum spin Hall effect in low-dimension Dirac semimetals, an effect that is theoretically predicted but not yet experimentally realized.

cond-mat.mtrl-sci↗

arXiv2015

Landau level splitting in Cd3As2 under high magnetic fields

Three-dimensional topological Dirac semimetals (TDSs) are a new kind of Dirac materials that exhibit linear energy dispersion in the bulk and can be viewed as three-dimensional graphene. It has been proposed that TDSs can be driven to other exotic phases like Weyl semimetals, topological insulators and topological superconductors by breaking certain symmetries. Here we report the first transport experiment on Landau level splitting in TDS Cd3As2 single crystals under high magnetic fields, suggesting the removal of spin degeneracy by breaking time reversal symmetry. The detected Berry phase develops an evident angular dependence and possesses a crossover from nontrivial to trivial state under high magnetic fields, a strong hint for a fierce competition between the orbit-coupled field strength and the field-generated mass term. Our results unveil the important role of symmetry breaking in TDSs and further demonstrate a feasible path to generate a Weyl semimetal phase by breaking time reversal symmetry.

cond-mat.mtrl-sci↗

arXiv2015

Scalable Growth of High Mobility Dirac Semimetal Cd3As2 Microbelts

Three dimensional (3D) Dirac semimetals are 3D analogue of graphene, which display Dirac points with linear dispersion in k-space, stabilized by crystal symmetry. Cd3As2 and Na3Bi were predicted to be 3D Dirac semimetals and were subsequently demonstrated by photoemission experiments. As unveiled by transport measurements, several exotic phases, such as Weyl semimetals, topological insulators, and topological superconductors, can be deduced by breaking time reversal or inversion symmetry. Here, we reported a facile and scalable chemical vapor deposition method to fabricate high-quality Dirac semimetal Cd3As2 microbelts, they have shown ultrahigh mobility up to 1.15*10^5 cm^2/V s and pronounced Shubnikov-de Haas oscillations. Such extraordinary features are attributed to the suppression of electron backscattering. This research opens a new avenue for the scalable fabrication of Cd3As2 materials towards exciting electronic applications of 3D Dirac semimetals.

cond-mat.mtrl-sci↗

arXiv2015

ReS2-based field-effect transistors and photodetectors

Atomically-thin two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Here, we report on the fabrication of ReS2 field-effect transistors via the encapsulation of ReS2 nanosheets in a high-\k{appa} Al2O3 dielectric environment. Low-temperature transport measurements allowed us to observe a direct metal-to-insulator transition originating from strong electron-electron interactions. Remarkably, the photodetectors based on ReS2 exhibit gate-tunable photoresponsivity up to 16.14 A/W and external quantum efficiency reaching 3,168 %, showing a competitive device performance to those reported in graphene, MoSe2, GaS and GaSe-based photodetectors. Our study unambiguously distinguishes ReS2 as a new candidate for future applications in electronics and optoelectronics.

cond-mat.mtrl-sci↗

arXiv2015

Magnetotransport properties of Cd3As2 nanostructures

Three-dimensional (3D) topological Dirac semimetal is a new kind of material that has a linear energy dispersion in 3D momentum space and can be viewed as an analog of graphene. Extensive efforts have been devoted to the understanding of bulk materials, but yet it remains a challenge to explore the intriguing physics in low-dimensional Dirac semimetals. Here, we report on the synthesis of Cd3As2 nanowires and nanobelts and a systematic investigation of their magnetotransport properties. Temperature-dependent ambipolar behavior is evidently demonstrated, suggesting the presence of finite-size of bandgap in nanowires. Cd3As2 nanobelts, however, exhibit metallic characteristics with a high carrier mobility exceeding 32,000 cm2V-1s-1 and pronounced anomalous double-period Shubnikov-de Haas (SdH) oscillations. Unlike the bulk counterpart, the Cd3As2 nanobelts reveal the possibility of unusual change of the Fermi sphere owing to the suppression of the dimensionality. More importantly, their SdH oscillations can be effectively tuned by the gate voltage. The successful synthesis of Cd3As2 nanostructures and their rich physics open up exciting nanoelectronic applications of 3D Dirac semimetals.

cond-mat.mtrl-sci↗

arXiv2015

Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb$_{1-x}$Sn$_x$Te

Three-dimensional topological insulators and topological crystalline insulators represent new quantum states of matter, which are predicted to have insulating bulk states and spin-momentum-locked gapless surface states. Experimentally, it has proven difficult to achieve the high bulk resistivity that would allow surface states to dominate the transport properties over a substantial temperature range. Here we report a series of indium-doped Pb$_{1-x}$Sn$_x$Te compounds that manifest huge bulk resistivities together with strong evidence of topological surface states, based on thickness-dependent transport studies and magnetoresistance measurements. For these bulk-insulating materials, the surface states determine the resistivity for temperatures approaching 30 K.

cond-mat.mtrl-sci↗

arXiv2015

Substitution of Ni for Fe in superconducting Fe$_{0.98}$Te$_{0.5}$Se$_{0.5}$ depresses the normal-state conductivity but not the magnetic spectral weight

We have performed systematic resistivity and inelastic neutron scattering measurements on Fe$_{0.98-z}$Ni$_z$Te$_{0.5}$Se$_{0.5}$ samples to study the impact of Ni substitution on the transport properties and the low-energy ($\le$ 12 meV) magnetic excitations. It is found that, with increasing Ni doping, both the conductivity and superconductivity are gradually suppressed; in contrast, the low-energy magnetic spectral weight changes little. Comparing with the impact of Co and Cu substitution, we find that the effects on conductivity and superconductivity for the same degree of substitution grow systematically as the atomic number of the substituent deviates from that of Fe. The impact of the substituents as scattering centers appears to be greater than any contribution to carrier concentration. The fact that low-energy magnetic spectral weight is not reduced by increased electron scattering indicates that the existence of antiferromagnetic correlations does not depend on electronic states close to the Fermi energy.

cond-mat.supr-con↗

arXiv2014

Observation of the chiral magnetic effect in ZrTe5

The chiral magnetic effect is the generation of electric current induced by chirality imbalance in the presence of magnetic field. It is a macroscopic manifestation of the quantum anomaly in relativistic field theory of chiral fermions (massless spin $1/2$ particles with a definite projection of spin on momentum) -- a dramatic phenomenon arising from a collective motion of particles and antiparticles in the Dirac sea. The recent discovery of Dirac semimetals with chiral quasi-particles opens a fascinating possibility to study this phenomenon in condensed matter experiments. Here we report on the first observation of chiral magnetic effect through the measurement of magneto-transport in zirconium pentatelluride, ZrTe_5. Our angle-resolved photoemission spectroscopy experiments show that this material's electronic structure is consistent with a 3D Dirac semimetal. We observe a large negative magnetoresistance when magnetic field is parallel with the current. The measured quadratic field dependence of the magnetoconductance is a clear indication of the chiral magnetic effect. The observed phenomenon stems from the effective transmutation of Dirac semimetal into a Weyl semimetal induced by the parallel electric and magnetic fields that represent a topologically nontrivial gauge field background.

cond-mat.str-el↗

arXiv2014

Magneto-optical characterizations of FeTe$_{0.5}$Se$_{0.5}$ thin films with critical current density over 1 MA/cm$^2$

We performed magneto-optical (MO) measurements on FeTe$_{0.5}$Se$_{0.5}$ thin films grown on LaAlO$_3$ (LAO) and Yttria-stabilized zirconia (YSZ) single-crystalline substrates. These thin films show superconducting transition temperature, ${T_c}$ $\sim$ 19 K, 4 K higher than the bulk sample. Typical roof-top patterns can be observed in the MO images of thin films grown on LAO and YSZ, from which a large and homogeneous critical current density, ${J_c}$, over 1 $\times$ 10$^6$ A/cm$^2$ at 5 K was obtained. Magnetic flux penetration measurement reveals that the current is almost isotropically distributed in the two thin films. Compared with bulk crystals, FeTe$_{0.5}$Se$_{0.5}$ thin film demonstrates not only higher ${T_c}$, but also much larger ${J_c}$, which is attractive for applications.

cond-mat.supr-con↗

arXiv2014

Plasmonic lasing of nanocavity embedding in metallic nanoantenna array

Plasmonic nanolasers have ultrahigh lasing thresholds, especially those devices for which all three dimensions are truly subwavelength. Because of a momentum mismatch between the propagating light and localized optical field of the subwavelength nanocavity, poor optical pumping efficiency is another important reason for the ultrahigh threshold but is normally always ignored. Based on a cavity-embedded nanoantenna array design, we demonstrate a room-temperature low-threshold plasmonic nanolaser that is robust, reproducible, and easy-to-fabricate using chemical-template lithography. The mode volume of the device is~0.22(λ/2n)3 (here,λ is resonant wavelength and n is the refractive index), and the experimental lasing threshold produced is ~2.70MW/mm2. The lasing polarization and the function of nanoantenna array are investigated in detail. Our work provides a new strategy to achieve room-temperature low-threshold plasmonic nanolasers of interest in applications to biological sensoring and information technology.

physics.optics↗

arXiv2014

Multiple scattering effects on heavy meson production in p+A collisions at backward rapidity

We study the incoherent multiple scattering effects on heavy meson production in the backward rapidity region of p+A collisions within the generalized high-twist factorization formalism. We calculate explicitly the double scattering contributions to the heavy meson differential cross sections by taking into account both initial-state and final-state interactions, and find that these corrections are positive. We further evaluate the nuclear modification factor for muons that come form the semi-leptonic decays of heavy flavor mesons. Phenomenological applications in d+Au collisions at a center-of-mass energy $\sqrt{s}=200$ GeV at RHIC and in p+Pb collisions at $\sqrt{s}=5.02$ TeV at the LHC are presented. We find that incoherent multiple scattering can describe rather well the observed nuclear enhancement in the intermediate $p_T$ region for such reactions.

hep-ph↗

arXiv2014

Tunable charge-trap memory based on few-layer MoS2

Charge-trap memory with high-\k dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention because of their novel physical properties and potential applications in electronic devices. Here, we report on a dual-gate charge-trap memory device composed of a few-layer MoS2 channel and a three-dimensional (3D) Al2O3/HfO2/Al2O3 charge-trap gate stack. Owing to the extraordinary trapping ability of both electrons and holes in HfO2, the MoS2 memory device exhibits an unprecedented memory window exceeding 20 V. More importantly, with a back gate the window size can be effectively tuned from 15.6 to 21 V; the program/erase current ratio can reach up to 104, far beyond Si-based flash memory, which allows for multi-bit information storage. Furthermore, the device shows a high mobility of 170 cm2V-1s-1, a good endurance of hundreds of cycles and a stable retention of ~28% charge loss after 10 years which is drastically lower than ever reported MoS2 flash memory. The combination of 2D materials with traditional high-\k charge-trap gate stacks opens up an exciting field of novel nonvolatile memory devices.

cond-mat.mtrl-sci↗