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Cheng Cen

Publications and source records attributed to Cheng Cen.

16 recordsLinked to original sources
arXiv2025

Light-driven lattice metastability for enhanced superconductivity in FeSe/SrTiO3

Driven quantum materials with on demand properties controlled by external stimuli are critical for emergent quantum technology. In optically tunable superconducting heterostructures, the lattice responses at the buried interface may hold the key to the light susceptibility but is very challenging to detect. In this work, a nondestructive synchrotron-based X-ray scattering phase-retrieval technique is implemented in monolayer-FeSe/SrTiO3 heterostructures to capture the three-dimensional interfacial atomic displacements in-situ as the interface superconductivity is actively manipulated by light. It is found that the interlayer sliding between FeSe and SrTiO3 can drastically alter how the lattice responds to the light. In domains with selected stacking configurations, the interface transforms the very weak photoexcitation in SrTiO3 into significant Fe-atom displacements in FeSe and generate metastable interfacial structures that can lead to a persistent superconductivity enhancement. These findings demonstrate an effective strategy for achieving greatly amplified light-lattice coupling for efficient quantum phase manipulations at designed interfaces.

cond-mat.mtrl-sci↗
arXiv2023

Room-temperature ferromagnetism in epitaxial bilayer FeSb/SrTiO3(001) terminated with a Kagome lattice

Two-dimensional (2D) magnets exhibit unique physical properties for potential applications in spintronics. To date, most 2D ferromagnets are obtained by mechanical exfoliation of bulk materials with van der Waals interlayer interactions, and the synthesis of single or few-layer 2D ferromagnets with strong interlayer coupling remains experimentally challenging. Here, we report the epitaxial growth of 2D non-van der Waals ferromagnetic bilayer FeSb on SrTiO3(001) substrates stabilized by strong coupling to the substrate, which exhibits in-plane magnetic anisotropy and a Curie temperature above 300 K. In-situ low-temperature scanning tunneling microscopy/spectroscopy and density-functional theory calculations further reveal that a Fe Kagome layer terminates the bilayer FeSb. Our results open a new avenue for further exploring emergent quantum phenomena from the interplay of ferromagnetism and topology for application in spintronics.

cond-mat.mtrl-sci↗
arXiv2021

Engineering of Ferroic Orders in Thin Films by Anionic Substitution

Multiferroics are a unique class of materials where magnetic and ferroelectric orders coexist. The research on multiferroics contributes significantly to the fundamental understanding of the strong correlations between different material degrees of freedom and provides an energy-efficient route toward the electrical control of magnetism. While multiple ABO3 oxide perovskites have been identified as being multiferroic, their magnetoelectric coupling strength is often weak, necessitating the material search in different compounds. Here, we report the observation of room-temperature multiferroic orders in multi-anion SrNbO3-xNx thin films. In these samples, the multi-anion state enables the room-temperature ferromagnetic ordering of the Nb d-electrons. Simultaneously, we find ferroelectric responses that originate from the structural symmetry breaking associated with both the off-center displacements of Nb and the geometric displacements of Sr, depending on the relative O-N arrangements within the Nb-centered octahedra. Our findings not only diversify the available multiferroic material pool but also demonstrate a new multiferroism design strategy via multi-anion engineering.

cond-mat.mtrl-sci↗
arXiv2020

Indium Antimonide, constraints on practicality as a magneto-optical platform for topological surface plasmon polaritons

Magnetic-field-biased indium antimonide (InSb) is one of the most widely-discussed materials for supporting nonreciprocal surface plasmon polaritons (SPPs), which have recently been shown to be topological. In this work, we provide a critical assessment of InSb as a magneto-optical SPP platform, and show that it is only viable under a narrow set of conditions.

physics.optics↗
arXiv2020

Terahertz response of gadolinium gallium garnet (GGG) and gadolinium scandium gallium garnet (SGGG)

We report the magneto-optical response of Gadolinium Gallium Garnet (GGG) and Gadolinium Scandium Gallium Garnet (SGGG) at frequencies ranging from $300 \, \mathrm{GHz}$ to $1 \, \mathrm{THz}$, and determine the material response tensor. Within this frequency window, the materials exhibit nondispersive and low-loss optical responses. At low temperatures, significant THz Faraday rotations are found in the (S)GGG samples. Such strong gyroelectric response is likely associated with the high-spin paramagnetic state of the Gd$^{3+}$ ions. A model of the material response tensor is determined, together with the Verdet and magneto-optic constants.

cond-mat.mes-hall↗
arXiv2015

Ultrafast observation of electron hybridization and in-gap states formation in Kondo insulator SmB6

SmB6 is a promising candidate for topological Kondo insulator. In this letter, we report ultrafast carrier dynamics of SmB6. Two characteristic temperatures: T1=100 K and T2= 20 K are observed. T1 corresponds to the opening of the f-d hybridization gap revealed by an abrupt disappearance of terahertz f-band plasmon oscillations. Between T1 and T2, a phonon bottleneck effect dominates the photocarrier relaxation processes. Below T2, we observe the formation of in-gap states, which are strongly affected by optically injected hot electrons and the transient electron temperature change.

cond-mat.str-el↗
arXiv2012

Superconducting LaAlO3/SrTiO3 Nanowires

We report superconductivity in quasi-1D nanostructures created at the LaAlO3/SrTiO3 interface. Nanostructures having line widths w~10 nm are formed from the parent two-dimensional electron liquid using conductive atomic force microscope lithography. Nanowire cross-sections are small compared to the superconducting coherence length in LaAlO3/SrTiO3 (w<<xi~100 nm), placing them in the quasi-1D regime. Broad superconducting transitions with temperature and finite resistances in the superconducting state well below Tc~200 mK are observed. V-I curves show switching between the superconducting and normal states that are characteristic of superconducting nanowires. The four-terminal resistance in the superconducting state shows an unusual dependence on the current path, varying by as much as an order of magnitude.

cond-mat.mes-hall↗
arXiv2011

Quantum transport in oxide nanostructures

We describe magnetotransport experiments performed on Hall crosses made from quantum wires at LaAlO3/SrTiO3 interfaces. Shubnikov-de Haas oscillations measured in a 14-nm wide structure exhibit modulations that are consistent with spin-orbit coupling or valley degeneracies. Hall measurements performed on the 6 nm-wide Hall cross reveal dissipative coupling to magnetic phases. Hall plateaus are observed that deviate significantly from two-dimensional quantum Hall counterparts. Non-monotonic dips in the Hall resistance are attributed to one-dimensional confinement and spin-orbit coupling.

cond-mat.mes-hall↗
arXiv2011

Cooper Pair Writing at the LaAlO3/SrTiO3 Interface

The LaAlO3/SrTiO3 interface provides a unique platform for controlling the electronic properties of the superconducting semiconductor SrTiO3. Prior investigations have shown that two-dimensional superconductivity can be produced at the LaAlO3/SrTiO3 interface and tuned electrostatically. The recently demonstrated reversible control of the metal-insulator transition at the same interface using conductive atomic force microscopy (c-AFM) raises the question of whether this room-temperature technique can produce structures that exhibit superconducting, normal metallic and insulating phases at sub-Kelvin temperatures. Here we report low-temperature magnetotransport experiments on conducting structures defined at an otherwise insulating LaAlO3/SrTiO3 interface. A quantum phase transition associated with the formation of Cooper pairs is observed in these predefined structures at sub-Kelvin temperatures. However, a finite resistance remains even at the lowest temperature. At higher magnetic fields, interfaces with high mobility also exhibit strong Shubnikov-de Haas oscillations as well as a larger Ginsburg-Landau coherence length. Cooper pair localization, spin-orbit coupling, and finite-size effects may factor into an explanation for some of the unusual properties observed.

cond-mat.mes-hall↗
arXiv2010

Coherent soft-mode phonon generation and detection in ultrathin SrTiO3 grown directly on silicon

Time-resolved two color pump-probe polarization spectroscopy was performed at room temperature on SrTiO3 films grown directly on Si with film thickness varying from 2 nm to 7.8 nm. The E soft mode with a characteristic frequency of 0.2 THz is impulsively generated and measured in these coherently strained tetragonal phase SrTiO3 thin films. Another over-damped signal observed indicates the possible relaxational hopping of Ti ion between double potential wells. The dependence of the coherent phonon signal on pump and probe laser polarization helps to identify the phonon modes.

cond-mat.mtrl-sci↗
arXiv2010

"Water-cycle" mechanism for writing and erasing nanostructures at the LaAlO3/SrTiO3 interface

Nanoscale control of the metal-insulator transition in LaAlO3/ SrTiO3 heterostructures can be achieved using local voltages applied by a conductive atomic-force microscope probe. One proposed mechanism for the writing and erasing process involves an adsorbed H2O layer at the top LaAlO3 surface. In this picture, water molecules dissociates into OH- and H+ which are then selectively removed by a biased AFM probe. To test this mechanism, writing and erasing experiments are performed in a vacuum AFM using various gas mixtures. Writing ability is suppressed in those environments where H2O is not present. The stability of written nanostructures is found to be strongly associated with the ambient environment. The self-erasure process in air can be strongly suppressed by creating a modest vacuum or replacing the humid air with dry inert gas. These experiments provide strong constraints for theories of both the writing process as well as the origin of interfacial conductance.

cond-mat.mes-hall↗
arXiv2010

Rewritable nanoscale oxide photodetector

Nanophotonic devices seek to generate, guide, and/or detect light using structures whose nanoscale dimensions are closely tied to their functionality. Semiconducting nanowires, grown with tailored optoelectronic properties, have been successfully placed into devices for a variety of applications. However, the integration of photonic nanostructures with electronic circuitry has always been one of the most challenging aspects of device development. Here we report the development of rewritable nanoscale photodetectors created at the interface between LaAlO3 and SrTiO3. Nanowire junctions with characteristic dimensions 2-3 nm are created using a reversible AFM writing technique. These nanoscale devices exhibit a remarkably high gain for their size, in part because of the large electric fields produced in the gap region. The photoconductive response is gate-tunable and spans the visible-to-near-infrared regime. The ability to integrate rewritable nanoscale photodetectors with nanowires and transistors in a single materials platform foreshadows new families of integrated optoelectronic devices and applications.

cond-mat.mes-hall↗
arXiv2010

Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor

We report direct measurements of the potential barriers and electronic coupling between nanowire segments within a sketch-based oxide nanotransistor (SketchFET) device. Near room temperature, switching is governed by thermally activation across a potential barrier controlled by the nanowire gate. Below T=150 K, a crossover to quantum field emission is observed that is sensitive to structural phase transitions in the SrTiO3 layer. This direct measurement of the source-drain and gate-drain energy barriers is crucial for the development of room-temperature logic and memory elements and low-temperature quantum devices.

cond-mat.mes-hall↗
arXiv2010

Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor

The interface between polar LaAlO3 and non-polar SrTiO3 exhibits a remarkable variety of electronic behavior associated with the formation of an interfacial quasi-two-dimensional electron gas (q-2DEG). By "sketching" patterns of charge on the top LaAlO3 surface, the LaAlO3/SrTiO3 interface conductance can be controlled with near-atomic spatial resolution. Using this technique, a sketch-based oxide nanotransistor (SketchFET) was demonstrated with a minimum feature size of just two nanometers. Here we report direct measurements of the potential barriers and electronic coupling between nanowire segments within a SketchFET device. Near room temperature, switching is governed by thermally activated field emission from the nanowire gate. Below T=150 K, a crossover to quantum field emission is observed that is sensitive to structural phase transitions in the SrTiO3 layer. This direct measurement of the source-drain and gate-drain energy barriers is crucial for the development of room-temperature logic and memory elements and low-temperature quantum devices.

cond-mat.mtrl-sci↗
arXiv2010

Nanoscale rectification at the LaAlO3/SrTiO3 interface

Nanoscale control over electron transport at scales that are comparable to the Fermi wavelength or mean-free path can lead to new families of electronic devices. Here we report electrical rectification in nanowires formed by nanoscale control of the metal-insulator transition at the interface between LaAlO3 and SrTiO3. Controlled in-plane asymmetry in the confinement potential produces electrical rectification in the nanowire, analogous to what occurs naturally for Schottky diodes or by design in structures with engineered structural inversion asymmetry. Nanostructures produced in this manner may be useful for electro-optic applications or in spintronic devices.

cond-mat.mes-hall↗