arXiv subjects

Chaoxi Cui

Publications and source records attributed to Chaoxi Cui.

At least 19 recordsLinked to original sources

arXiv2026

Magnetic-Field Selection of Magnetic Order in Altermagnets and Noncollinear Antiferromagnets

Conventional field selection of magnetic order relies on the Zeeman coupling, which, however, vanishes in magnets without net magnetization, a rapidly growing class including altermagnets (AMs), noncollinear antiferromagnets (nc-AFMs), and PT-symmetric antiferromagnets (PT-AFMs). Here we show that the quantity that fundamentally couples a magnet to a uniform magnetic field is not the magnetization, but the binary order parameter eta that labels the two time-reversal-related minima of the Landau free energy. We develop a Landau theory of order selection based on eta under the constraints of magnetic point-group (MPG) symmetry, in which eta couples to odd-degree polynomials in the magnetic field. Within this framework, the linear term is the ferromagnetic Zeeman coupling, while higher-order couplings with leading degree n = 3, 5, 7, and 9 naturally appear in AMs and nc-AFMs. In contrast, combined PT symmetry forbids any such coupling. Consequently, it is the order-(n-1) magnetic susceptibility, rather than the net magnetization, that serves as the primary experimental observable for identifying the magnetic order of AMs and nc-AFMs. For all 122 MPGs, we classify the leading coupling degree and the corresponding polynomial forms. We demonstrate our framework in two representative materials: the AM MnF2 and the nc-AFM MnTe2. We further construct a symmetry-allowed spin model for an AM system to reveal the microscopic origin of the higher-order coupling and establish the coupling coefficient explicitly in terms of the spin-model parameters. Our work unifies the description of magnetic-order selection across magnets with and without net magnetization, offers a microscopic origin for this counterintuitive physics, and provides fingerprints for distinguishing intrinsic field selection from extrinsic switching.

cond-mat.mtrl-sci↗

arXiv2026

Quantized Spin Hall Effect in Three-Dimensional Nodal-Ring Semimetal: Geometric Scaling and Symmetry-Engineered Spin Response

The anomalous Hall conductivity in magnetic Weyl semimetals scales linearly with the momentum separation between Weyl nodes, establishing a geometric paradigm for three-dimensional Hall responses. Here we discover an analogous phenomenon in the spin Hall effect: a quantized spin Hall conductivity (SHC) in nodal-ring semimetals that scales linearly with the nodal-ring radius $R$. From an ideal model with a single nodal ring, we derive analytically that the SHC inside the spin-orbit-coupled gap obeys $\sigma_{\alpha \beta}^{S, 3D}=\sigma_0^{S,2D} \cdot (\pi R/2 \pi)$, where $\sigma_0^{S,2D}=(e^2/h) \cdot (\hbar/2 e)$ is the two-dimensional quantum spin Hall conductance. Crucially, the symmetry of the spin-orbit coupling acts as an independent switch: Rashba coupling generates purely conventional SHC components, while Weyl coupling additionally activates unconventional ones, providing separate control over response magnitude and tensor symmetry. We validate this principle in yttrium nitride, where strain tunes $R$ and symmetry breaking toggles between response types. Our work establishes a new paradigm for engineering quantized geometric responses in three dimensions, opening pathways to tailored spin-orbit functionalities.

cond-mat.mtrl-sci↗

arXiv2026

Fractional Spin Ferroelectric and Sliding Spin Current in Magnetic Sliding Ferroelectrics

We investigate the fractional spin ferroelectric (FSFE) in magnetic sliding ferroelectrics (SFEs), where ferroelectric switching is characterized not only by the reversal of the out-of-plane electric polarization but also by a variation of fractional in-plane spin electronic polarization. We show that interlayer sliding in FSFEs can naturally lead to a symmetry-protected pure spin current, termed the sliding spin current here. The underlying mechanism is that, during switching, the contributions of valence electrons and ions to the in-plane charge transfer cancel each other, whereas the in-plane spin transfer, which stems solely from valence electrons, persists, leading to a pure spin current. We demonstrate our ideas in various material candidates, including $H$-stacked bilayer CrI$_3$, whose few-layer form has been experimentally confirmed to be a magnetic SFE, and $R$-stacked bilayers $2H$-V$X_2$ ($X=$ S, Se, Te), which have been experimentally synthesised. For a typical switching time of about $1$ ns, the estimated spin-current densities for bilayer CrI$_3$ and V$X_2$ reach $10^9 (\hbar/2e)\mathrm{A/m^2}$ and $10^8 (\hbar/2e)\mathrm{A/m^2}$, respectively. This means that by applying a periodic out-of-plane electric field, a significant alternating spin current can be generated in magnetic SFEs. Thus, our findings propose a compelling new mechanism for the all-electrical generation of pure spin current, and predict concrete realistic materials for experimental verification.

cond-mat.mtrl-sci↗

arXiv2026

Unconventional Scaling of Electric Hall Effect in Magnetic Weyl Semimetals

Electric Hall Effect (EHE), a unique phenomenon in two-dimensional (2D) magnetic systems, refers to the generation of Hall current by an out-of-plane electric field $\Ez$. Here, we demonstrate that for 2D magnetic Weyl semimetals that host doubly degenerate nodal points, the EHE features multiple unconventional scaling laws. At zero temperature, the EHE exhibits a topological $E_F^{-1}$ Fermi-energy scaling. Remarkably, the prefactor of the scaling is determined by the global topological charge of the point without any dependence on the local parameters of the system, leading to a universal and significant enhancement of Hall response in any species of Weyl points as the Fermi energy approaches the Weyl point. This significant response enables a weak electric field to be directly converted into a measurable Hall signal. Surprisingly, this enhanced Hall response is not diminished by temperature, but evolves into an unconventional logarithmically corrected scaling at finite temperature $\sigma_{xy}\propto\Ez\ln(1/|\Ez|)$ for weak $\Ez$, still yielding a divergent electric-field susceptibility. Thus, our work not only unveils intriguing scaling laws resulting from the interaction between magnetism and topology, but also suggests a novel scaling-enhanced and temperature-robust mechanism that may enable weak electric-field sensing through a practical and all-electric route.

cond-mat.mes-hall↗

arXiv2026

Ridge-Spin-Layer Coupling and Emergent Ridgetronics in 2D Altermagnets

Extending valleytronics from discrete points to continuous lines in momentum space transforms dispersionless bands into a controllable degree of freedom. Here we introduce ridge--spin--layer coupling (RSLC) in two-dimensional (2D) altermagnets, where a one-dimensional continuous line of dispersionless electronic states (a ridge) in momentum space locks to both spin polarization and atomic sublayer. This ridge-induced quenching of kinetic energy mimics flat-band physics, yet crucially, RSLC grants external control, allowing for layer-selective switching of ridge orientation in reciprocal space, spin-filtered transport in real space, and a distinct electric Hall response. Guided by collinear spin layer group symmetry, we identify three 2D candidate materials, namely Mg$_2$Mo$_2$(PO$_5$)$_2$, Ca(FeP)$_2$, and Mg$_2$V$_2$(SO$_5$)$_2$, each featuring a crossed-ridge structure with two ridges, one per spin channel and sublayer. Our work establishes ridgetronics as a controllable platform for direction-discriminating currents, bridging dispersionless bands with multifunctional device operation.

cond-mat.mtrl-sci↗

arXiv2026

Topological Interstitial-Electron Conductor

Electron transport in solids arises primarily from two mechanisms: freely moving bulk electrons in metals, and gapless boundary states in topological insulators. Here, we report a new mechanism discovered in electrides. The topological interstitial-electron conductors (TIECs) proposed here are insulating electrides, but host interstitial electrons (IEs) distributed within crystal voids that traverse the entire unit cell. Without being tightly bound to real ions, the IEs generally experience low periodic potential barrier along the void channels. As a consequence, by applying a weak electric field sufficient to overcome the IE barriers but far below the system's dielectric breakdown threshold, one can expect that the TIECs would generate a persistent current contributed by the IEs and propagating along the void channels. We identify a family of realistic altermagnetic electrides, $A_5X_3$ ($A$ = Ca, Sr, Ba, Yb; $X$ = As, Sb), as TIECs. Remarkably, for $A_5X_3$ materials, the periodic potential barrier of the IEs along the void channels are ultralow, ranging from 13.43 to 67.96 meV per formula unit. This renders our proposal readily accessible to experimental verification. We further demonstrate that when the IEs of $A_5X_3$ undergo periodic motion along the channels, topological surface states will emerge at the boundary perpendicular to the channel direction, and continuously move across the bulk band gap. This pumping-like behaviour not only corroborates the topological nature of TIECs, but also rationalizes the finite-electric-field induced electronic transport within the band theory. Our findings expand the classification of electronic conductors, uncover unexplored transport properties of electrides, and establish a new material platform for low-power electronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Equivariant Space Group and Hamiltonian for Collinear Magnetic Systems

Condensed matter physics increasingly focuses on exploiting the magnetic order parameter orientation n as a tuning knob for properties of collinear magnetic materials, but a general method for constructing effective Hamiltonians with explicit n-dependence has been lacking. Here, we develop a symmetry-based framework, built on the equivariant space group, for constructing such Hamiltonians, termed equivariant magnetic Hamiltonians (EMHs). The resulting EMH lives in a higher-dimensional k-n space and exhibits unconventional symmetry actions and topological features. Using a 1D ferromagnetic chain and a 3D antiferromagnet as examples, we demonstrate that explicit n-dependence in EMHs enables the study of magnetic-dynamics-driven topological pumping, including even-integer charge pumping and a second-Chern-number-induced quantized pumping of surface anomalous Hall conductivity. Beyond model systems, we incorporate the framework into first-principles calculations to construct ab-initio EMHs that accurately capture the n-dependent band structures of real materials. The approach can also be generalized to non-collinear magnetic systems. Our work establishes a general framework for constructing EMHs and for exploring the rich physics arising from magnetic anisotropy and magnetic dynamics.

cond-mat.mtrl-sci↗

arXiv2026

Type-II Antiferroelectricity

Antiferroelectricity (AFE) is a fundamental concept in physics and materials science. Conventional AFEs have the picture of alternating local electric dipoles defined in real space. Here, we discover a new class of AFEs, termed type-II AFEs, which possess opposite polarizations defined in momentum space across a pair of symmetry decoupled subspaces. Unlike conventional AFEs, the order parameter of type-II AFEs is rigorously formulated through Berry-phase theory and can be quantitatively extracted from the electronic band structure. Focusing on a subclass of type-II AFEs that preserve spin-rotation symmetry, we establish the relevant symmetry constraints and identify all compatible spin point groups. Remarkably, we find that type-II AFE order intrinsically coexists with antiferromagnetism, revealing a robust form of magnetoelectric coupling. We construct an altermagnetic model and identify several concrete antiferromagnetic/altermagnetic materials, such as FeS, Cr2O3, MgMnO3, monolayer MoICl2 and bilayer CrI3, that exhibit this novel ordering. Furthermore, we uncover unique physical phenomena associated with type-II spin-AFE systems, including spin current generation upon AFE switching and localized spin polarization at boundaries and domain walls. Our findings reveal a previously hidden class of quantum materials with intertwined ferroic orders, offering exciting opportunities for both fundamental exploration and technological applications.

cond-mat.mtrl-sci↗

arXiv2026

Manipulating Anomalous Transport via Crystal Symmetry in 2D Altermagnets

Anomalous transports, including the anomalous Hall effect (AHE) and anomalous Nernst effect (ANE), are typical manifestations of time-reversal-symmetry-breaking responses in materials. In general, the two Hall states with opposite Hall conductivities can be regarded as time-reversal pairs coupled to magnetic order, and switching between them relies on reversing the magnetization via an external magnetic field or electric current. Here, we introduce a approach for manipulating anomalous transport through crystal symmetry engineering in two-dimensional (2D) altermagnetic systems. Based on symmetry analysis, we demonstrate that 2D altermagnets (AM) with out-of-plane Néel vectors will not host any anomalous Hall transport. Remarkably, breaking the symmetry connecting the two magnetic sublattices, an anomalous Hall response can emerge immediately, and the signs of the anomalous Hall and anomalous Nernst conductivities can be flexibly controlled by the symmetry-breaking term, thereby realizing tunable sign-reversible anomalous transport. Furthermore, the feasibility of the theoretical scheme is further verified by explicit lattice-model construction. Using first-principles calculations, we investigate the realization of crystal symmetry-controlled anomalous transport in a 2D AM material Cr$_{2}$O$_{2}$. The results indicate that Cr$_{2}$O$_{2}$ with out-of-plane Néel vectors can sequentially exhibit the AHE and quantum anomalous Hall effect (QAHE) under continuous uniaxial strain. Interestingly, the sign reversal between these two effects can be achieved by simply rotating the strain direction by C$_{4z}$ symmetry. The corresponding ANE and its sign reversal are also revealed. Our findings provide a new strategy to manipulate anomalous transport, and should have significant potential applications.

cond-mat.mes-hall↗

arXiv2025

Nonvolatile Electrical Control of Spin via Sliding Fractional Quantum Multiferroics

We propose a fractionally quantized polarization induced by interlayer sliding in bilayer altermagnets, unveiling a previously unrecognized multiferroic phase termed sliding fractional quantum multiferroicity (SFQM). This unconventional magnetic phase uniquely integrates sliding ferroelectricity with fractional quantum ferroelectricity, enabling highly efficient switching and nonvolatile electrical control of spin.~Unlike conventional multiferroics, SFQM simultaneously exhibits lattice-scale atomic displacements, ultralow switching barriers, and spin splitting, giving rise to a large fractionally quantized polarization and strong magnetoelectric coupling. Through symmetry analysis and first-principles calculations, we identify bilayer altermagnet Ca(CoN)$_2$ and its family materials as promising candidates hosting SFQM. In contrast to gate-controlled schemes, the spin-layer coupling in SFQM is intrinsically induced by spontaneous electrical and layer polarization, requiring no sustained gate field and exhibiting nonvolatile character. This mechanism enables nonvolatile electrical control of spin through biaxial sliding, where displacements along the \textit{x}- and \textit{y}-axes generate opposite polarization directions in the layer-dependent electrical polarization. Furthermore, SFQM exhibits a fully switchable anomalous Hall effect and a pronounced magneto-optical response, which can be utilized for its detection and distinction. These findings highlight the promising role of sliding-mediated couplings among unconventional magnetism, fractional quantum ferroelectricity, and stacking order in realizing electrically controllable two-dimensional multiferroics.

cond-mat.mtrl-sci↗

arXiv2025

Anomalous shift in scattering from topological nodal-ring semimetals

An electron beam may experience an anomalous spatial shift during an interface scattering process. Here, we investigate this phenomenon for reflection from mirror-symmetry-protected nodal-ring semimetals, which are characterized by an integer topological charge $χ_h$. We show that the shift is generally enhanced by the presence of nodal rings, and the ring's geometry can be inferred from the profile of shift vectors in the interface momentum plane. Importantly, the anomalous shift encodes the topological information of the ring, where the circulation of the shift vector field $κ_s$ over a semicircle is governed by the topological charge, with a simple relationship: $κ_s=-2πχ_h$. Furthermore, we demonstrate that the shift and its circulation reflect distinct features of topological phase transitions of the charged rings. This study uncovers a novel physical signature of topological nodal rings and positions anomalous scattering shifts as a powerful tool for probing topological band structures.

cond-mat.mtrl-sci↗

arXiv2025

Ultrafast symmetry modulation and induced magnetic excitation in the Kagome metal RbV3Sb5

Light-matter interaction in frustrated Kagome metals enables access to hidden quantum states, yet the microscopic origin of symmetry breaking under ultrafast excitation remains elusive. Here, we uncover a microscopic mechanism for laser-induced symmetry breaking in RbV3Sb5 through first-principles real-time simulations. Selective excitation of a single-QM phonon mode dynamically breaks both rotational and time-reversal symmetries within the 2X2X1 charge density wave (CDW) superlattice. The resulting anisotropic lattice distortion lifts geometric frustration and stabilizes a nonequilibrium ferrimagnetic phase, accompanied by a sizable intrinsic anomalous Hall effect. Distinct from prior interpretations based on orbital antiferromagnetism or extrinsic perturbations, our findings reveal a spin-driven pathway for symmetry breaking under strong optical fields. These results provide a microscopic foundation for exploring how spin, lattice and charge degrees of freedom are intertwined in nonequilibrium correlated states.

cond-mat.str-el↗

arXiv2025

Symmetry Classification of Altermagnetism and Emergence of Type-IV Magnetism in Two Dimensions

Two-dimensional (2D) magnetism, particularly 2D altermagnetism (AM), has attracted considerable interest due to its exceptional physical properties and broad application potential. However, the classification of AM undergoes a fundamental paradigm shift when transitioning from three-dimensional (3D) to 2D symmetry-enforced fully compensated collinear magnetism$-$a shift that has remained largely overlooked. Here, by extending unconventional magnetism to 2D collinear systems, we identify the symmetry conditions and electronic band characteristics of a distinct magnetic phase: type-IV magnetism. This new class lies beyond the established descriptions of ferromagnetism, conventional antiferromagnetism, and AM. Type-IV magnetism supports the successive emergence of both nonrelativistic spin-degenerate and relativistic spin-splitting phenomena, belonging strictly to neither conventional antiferromagnetism nor standard AM. We further establish a universal symmetry classification framework for 2D type-IV magnets via a mapping from the collinear spin layer group to the magnetic layer group. Monolayer MgCr$_2$O$_3$ and monolayer BaMn$_2$Ch$_3$ (Ch=Se, Te) are showcased as representative materials, exhibiting gate-tunable reversible spin textures and the quantum electric Hall effect, respectively. Our work underscores the rich functional prospects of type-IV magnets, offering a new route toward spin manipulation and anomalous transport that promises innovative designs for high-performance spintronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Floquet control of topological phases and Hall effects in Z2 nodal line semimetals

Dynamic control of topological properties in materials is central to modern condensed matter physics, and Floquet engineering, utilizing periodic light fields, provides a promising avenue. Here, we use Floquet theory to theoretically study the topological response of a Z2 nodal line semimetal (NLSM) when driven by circularly polarized light (CPL). We demonstrate that the direction of CPL irradiation critically dictates the resulting topological phase transitions. Specifically, when light is incident perpendicular to the nodal line plane, increasing the light amplitude induces two successive topological phase transitions: first, from the Z2 NLSM to a vortex NLSM, a rare and intriguing topological state; and second, a transition from the vortex NLSM to a semimetal with a pair of Weyl points (WPs). In stark contrast, irradiation along other directions directly transforms the Z2 nodal line into a pair of WPs. We further investigate the transport properties of the Floquet Z2 NLSM, focusing on the anomalous and planar Hall effects. The anomalous Hall effect exhibits a direction-dependent amplitude variation, deviating from conventional two-band NLSM behavior. Importantly, we reveal a significant and tunable planar Hall effect, a phenomenon largely unexplored in Floquet topological materials, which is highly sensitive to both light amplitude and direction. Our findings not only present a novel route to realize the vortex NLSM, but also establish an efficient way to control Hall transport phenomena in Z2 NLSMs.

cond-mat.str-el↗

arXiv2025

Quantized Spin-Hall Conductivity in Altermagnet Fe$_2$Te$_2$O with Mirror-Spin Coupling

Due to spin-orbit coupling (SOC), crucial for the quantum spin Hall (QSH) effect, a quantized spin-Hall conductivity has not yet been reported in QSH insulators and other realistic materials. Here, we tackle this challenge by predicting robust quantized spin-Hall conductivity in monolayer Fe$_2$Te$_2$O. The underlying physics originates from the unrecognized mirror-spin coupling (MSC), which couples spin-up and spin-down states into two orthogonal mirror eigenstates. We show that the MSC can naturally emerge in the two-dimensional altermagnets with out-of-plane Néel vector and horizontal mirror. A remarkable consequence of the MSC is that it can dramatically weaken the spin hybridization of the altermagnetic materials when SOC is included. When SOC is neglected, Fe$_2$Te$_2$O is an altermagnetic Weyl semimetal with MSC. With SOC, it evolves into the first material candidate for magnetic mirror Chern insulator. Remarkably, under the protection of MSC, the spin hybridization of both bulk and topological edge states in Fe$_2$Te$_2$O with SOC at low energy is negligible. As a consequence, a quantized spin-Hall conductivity emerges within the bulk band gap of the system. By unveiling a novel effect, our findings represent a significant advancement in spin Hall transport, and broaden the material candidates hosting intriguing altermagnetic phenomena.

cond-mat.mes-hall↗

arXiv2025

Essentially degenerate hidden nodal lines in two-dimensional magnetic layer groups

According to the theory of group representations, the types of band degeneracy can be divided into accidental degeneracy and essential degeneracy. The essentially degenerate nodal lines (NLs) are typically resided on the high-symmetry lines of the Brillouin zone. Here, we propose a type of NL in two dimension that is essentially degenerate but is hidden within the high-symmetry planes, making it less observable, dubbed a hidden-essential nodal line (HENL). The existence of HENL is guaranteed as long as the system hosts a horizontal glide-mirror symmetry, hence such NLs can be widely found in both non-magnetic and magnetic systems. We perform an exhaustive search over all 528 magnetic layer groups (MLGs) for HENL that can be enforced by glide-mirror symmetry with both spinless and spinfull systems. We find that 122 candidate MLGs host spinless HENL, while 63 candidate MLGs demonstrate spinful HENL. In addition, we reveal that horizontal mirror and time-reversal symmetry in type-II and type-IV MLGs with spin-orbital coupling can enforce HENL formed. The 15 corresponding candidate MLGs have also been presented. Furthemore, we derive a few typical lattice models to characterize the existence for the HENL. For specific electronic fillings in real materials, namely 4$N$+2 in spinless systems (and 2$N$+1 in spinful systems), the presence of the HENLs in candidate MLGs is required regardless of the details of the systems. Using \emph{ab-initio} calculations, we further identify possible material candidates that realize spinless and spinful HENL. Moreover, spinful HENLs exhibit a novel persistent spin texture wih the characteristic of momentum-independent spin configuration. Our findings uncover a new type of topological semimetal state and offer an ideal platform to study the related physics of HENLs.

cond-mat.mtrl-sci↗

arXiv2024

Quasi-one-dimensional spin transport in altermagnetic $Z^3$ nodal net metals

In three dimensions, quasi-one-dimensional (Q1D) transport has traditionally been associated with systems featuring a Q1D chain structure. Here, based on first-principle calculations, we go beyond this understanding to show that the Q1D transport can also be realized in certain three-dimensional (3D) altermagnetic (AM) metals with a topological nodal net in momentum space but lacking Q1D chain structure in real space, including the existing compounds $β$-Fe$_2$(PO$_4$)O, Co$_2$(PO$_4$)O, and LiTi$_2$O$_4$. These materials exhibit an AM ground state and feature an ideal crossed $Z^3$ Weyl nodal line in each spin channel around Fermi level, formed by three straight and flat nodal lines traversing the entire Brillouin zone. These nodal lines eventually lead to an AM $Z^3$ nodal net. Surprisingly, the electronic conductivity $σ_{xx}$ in these topological nodal net metals is dozens of times larger than $σ_{yy}$ and $σ_{zz}$ in the up-spin channel, while $σ_{yy}$ dominates transport in the down-spin channel. This suggests a distinctive Q1D transport signature in each spin channel, and the principal moving directions for the two spin channels are orthogonal, resulting in Q1D direction-dependent spin transport. This novel phenomenon cannot be found in both conventional 3D bulk materials and Q1D chain materials. In particular, the Q1D spin transport gradually disappears as the Fermi energy moves away from the nodal net, further confirming its topological origin. Our work not only enhances the comprehension of topological physics in altermagnets but also opens a new direction for the exploration of topological spintronics.

cond-mat.mtrl-sci↗

arXiv2024

Cornertronics in Two-Dimensional Second-Order Topological Insulators

Traditional electronic devices rely on the electron's intrinsic degrees of freedom (d.o.f.) to process information. However, additional d.o.f. like the valley, can emerge in the low-energy states of certain systems. Here, we show that the quantum dots (QDs) constructed from two-dimensional (2D) second-order topological insulators (SOTI) posses a new kind of d.o.f., namely corner freedom, related to the topological corner states that reside at different corners of the systems. Since the corner states are well separated in real space, they can be individually and intuitively manipulated, giving rise to the concept of cornertronics. Via symmetry analysis and material search, we identify the TiSiCO-family monolayers as the first prototype of cornertronics materials, where the corner states can be controlled by both electric and optical fields, due to novel corner-layer coupling (CLC) effect and corner-contrasted linear dichroism. Furthermore, we find that the band gap of the TiSiCO nanodisk lies in the terahertz region and is robust to size reduction. These results indicate that the TiSiCO nanodisks can be used to design terahertz devices with ultrasmall size and electric-field tunable band gap. Besides, the TiSiCO nanodisks are simultaneously sensitive to both the strength and polarization of the terahertz waves. Our findings not only pave the way for cornertronics, but also open a new direction for research in 2D SOTI, QD and terahertz electronics.

cond-mat.mes-hall↗