arXiv subjects

Chaowei Hu

Publications and source records attributed to Chaowei Hu.

At least 19 recordsLinked to original sources

arXiv2026

Multiple closely spaced transitions and multi-band Hall response in clean ScV$_6$Sn$_6$

The kagome metal ScV$_6$Sn$_6$ has attracted attention as a platform for exploring the interplay between charge density wave (CDW) order and symmetry-breaking phenomena, including a recently reported intermediate phase and a low-field Hall anomaly that has been attributed to an anomalous Hall effect (AHE). The interpretation of both observations has been limited by the modest sample quality achieved by previous growth procedures, which produced crystals with in-plane residual resistivity ratios (RRR) of at most $\approx$9. Here, we report a simple modification of the flux growth procedure that yields ScV$_6$Sn$_6$ single crystals with RRR exceeding 50, more than five times the previous highest reported value, and use this expanded mobility range to revisit both the symmetry and the magnetotransport of the CDW phase. We resolve a sequence of closely spaced transitions in the immediate vicinity of $T_{CDW}$ that emerges above a sharp threshold of RRR $\approx 4$, and demonstrate through elastoresistivity that the intermediate phase breaks the three-fold rotational symmetry of the parent lattice. We examine the Hall response from both the parent samples across the full RRR range as well as Cr-doped samples, and conclude it is quantitatively inconsistent with an intrinsic AHE and is instead explained by ordinary multi-band transport involving small, high-mobility pockets identified through quantum oscillations. These results refine the symmetry-breaking landscape of ScV$_6$Sn$_6$ and establish systematic mobility tuning as a diagnostic for disentangling an intrinsic AHE from multi-band Hall contributions in kagome CDW systems.

cond-mat.str-el↗

arXiv2026

Notes on remanent magnetization measurements in superconductors and hard ferromagnets

Data on zero applied field measurements of remanent magnetization and magnetic relaxation in a BCS superconductor LuNi2B2C and several hard ferromagnets are presented and compared. Apparent similarities and differences, in particular in Thermoremanent Magnetization (TRM) - like, Isothermal Remanent Magnetization (IRM) - like, and remanent magnetization measurements with zigzag temperature sweep measurements are outlined. It is discussed how these results could be relevant for the magnetization measurements in diamond anvil cells.

cond-mat.mtrl-sci↗

arXiv2026

Electrically Programmable Correlated Topology and Magnetism in a Moir\'e Trilayer

Strong electron-electron interactions underlie a wide range of quantum many-body phenomena, including magnetism, superconductivity, and charge fractionalization. A central goal is to achieve in situ control over lattice geometry, bandwidth, and band topology within a single platform. Here we realize such an electrically programmable quantum many-body system in an alternating twisted trilayer MoTe$_2$, where an out-of-plane displacement field continuously modifies the layer polarization, effective lattice, and topology of the moir\'e bands. At zero displacement field, the system realizes a triangular lattice hosting a correlated insulator at one hole per moir\'e unit cell ($\nu = -1$). Doping this state produces strongly asymmetric magnetic responses: double-exchange-like ferromagnetism for $|\nu| > 1$, and signatures of spin polarons and antiferromagnetism for $|\nu| < 1$. At large displacement field, interlayer hybridization reconstructs the electronic structure into a honeycomb lattice with a flat Chern band, supporting integer and fractional Chern insulators. Magneto-optical measurements further reveal the signatures of gap closure and Landau-level formation from a spin-polarized Fermi surface near the crossover between the two regimes. These results establish a unified, electrically tunable platform in which correlated magnetism and topological states emerge from a single controllable band structure.

cond-mat.mes-hall↗

arXiv2026

Record magnetoresistance, enhanced superconductivity, and fermiology in WTe2

The diverse electronic properties of transition metal chalcogenides can be very sensitive to crystal imperfections. A new crystal growth technique, known as horizontal flux transport, offers a route to improved crystal quality. By refining this technique and applying it to the topological semimetal WTe2, we achieved crystals with an order of magnitude less disorder as determined by electrical transport and scanning tunneling microscopy measurements. At low temperatures these crystals exhibit the largest magnetoresistance reported in a metal. Exfoliated monolayers show quantum oscillations for the first time in the electrostatically doped metallic states, enabling determination of band degeneracies and the valley splitting induced by an electric field. Moreover, they exhibit a gated superconducting dome with a greatly enhanced critical temperature approaching 1.8 K. This advance opens up new avenues for employing WTe2 in topological electronics and gated superconducting devices, and promises comparable breakthroughs with other chalcogenides.

cond-mat.supr-con↗

arXiv2026

Ferroaxial and nematic transitions in the charge density wave phase of 1T-TiSe$_2$

Charge density waves (CDWs) with multi-component order parameters can break unexpected symmetries through the interplay of nearly degenerate instabilities. In the widely investigated material 1T-TiSe$_2$, a central question is whether the observed CDW has a chiral character, which would manifest as the spontaneous breaking of mirror and inversion symmetries. Previous experiments have reported conflicting results about the broken symmetries in the CDW phase of 1T-TiSe$_2$. Here, we resolve this controversy by identifying the bulk broken symmetry as ferroaxial, corresponding to the breaking of vertical mirrors while preserving inversion symmetry. Using symmetry-resolved elastoresistivity, we detect the spontaneous emergence of intrinsic off-diagonal elastoresistivity coefficients that satisfy an antisymmetric relation ($m_{xx-yy,xy} \approx -m_{xy,xx-yy}$), providing an unambiguous bulk transport signature of a macroscopic electric toroidal moment. Simultaneous elastocaloric measurements reveal that the onset of ferroaxial order occurs just below the CDW transition. As the temperature is lowered further, a diverging nematic susceptibility signals a distinct rotational symmetry-breaking instability inside the ferroaxial CDW state. Our findings demonstrate that the proposed ``chiral'' CDW in 1T-TiSe$_2$ is actually a centrosymmetric ferroaxial state, reconciling previous surface-sensitive observations with bulk symmetry constraints.

cond-mat.str-el↗

arXiv2026

Candidate for a Fractional Topological Insulator in Twisted MoTe2

The interplay among electronic correlation, topology, and time-reversal-symmetry (TRS) often leads to exotic quantum states of matter, as highlighted by the discoveries of fractional Chern insulators (FCIs) in twisted bilayer MoTe2 (tMoTe2). Among the FCIs in tMoTe2, the most robust is at a hole filling factor of v=-2/3 per moir\'e unit cell. Here, employing pump-probe circular dichroism (CD) measurement on tMoTe2 at twist angles (3.9 and 3.7 degrees), we show that a correlated state at v =-4/3 exhibits an unusual Ising antiferromagnet behavior. The v =-4/3 state with no net magnetization undergoes first order phase transitions at extremely low magnetic fields of ~ 2-6 mT to partially valley polarized (PVP) states. This behavior is notably absent for all other correlated states in tMoTe2 and also disappears for v =-4/3 at higher or lower twist angles (4.0 or 3.3 degree). The observed magnetic signature is consistent with a theoretically proposed fractional topological insulator (FTI), consisting of two copies of v =-2/3 FCIs with opposite chirality in the two K valleys. The experimental results are supported by interacting continuum model calculations that reveal the extreme closeness in energy ( < 1 meV) between the putative FTI and PVP states. Our findings present a candidate FTI with TRS and call for advanced transport and imaging measurements to establish the quantized helical edge modes.

cond-mat.str-el↗

arXiv2025

Bichromatic Moir\'{e} Superlattices for Tunable Quadrupolar Trions and Correlated States

Moir\'{e} superlattices in transition metal dichalcogenide heterostructures provide a platform to engineer many-body interactions. Here, we realize a bichromatic moir\'{e} superlattice in an asymmetric WSe$_2$/WS$_2$/WSe$_2$ heterotrilayer by combining R- and H-stacked bilayers with mismatched moir\'{e} wavelengths. This structure hosts fermionic quadrupolar moir\'{e} trions -- interlayer excitons bound to an opposite-layer hole -- with vanishing dipole moments. These trions arise from hybridized moir\'{e} potentials enabling multiple excitonic orbitals with tunable interlayer coupling, allowing control of excitonic and electronic ground states. We show that an out-of-plane electric field could effectively reshape moir\'{e} excitons and interlayer-intralayer electron correlations, driving a transition from interlayer to intralayer Mott states with enhanced Coulomb repulsion. The asymmetric stacking further enriches excitonic selection rules, broadening opportunities for spin-photon engineering. Our results demonstrate bichromatic moir\'{e} superlattices as a reconfigurable platform for emergent quantum states, where quadrupolar moir\'{e} trion emission may enable coherent and entangled quantum light manipulation.

cond-mat.mes-hall↗

arXiv2025

Optical Control of Integer and Fractional Chern Insulators

Optical control of topology, particularly in the presence of electron correlations, is a fascinating topic with broad scientific and technological impact. Twisted MoTe$_2$ bilayer (tMoTe$_2$) is a newly discovered zero-field fractional Chern insulator (FCI), exhibiting the fractionally quantized anomalous Hall (FQAH) effect. Since the chirality of the edge states and sign of the Chern number are determined by the underlying ferromagnetic polarization, manipulation of ferromagnetism would realize control of the CI/FCI states. Here, we demonstrate control and switching of ferromagnetic polarization, and thus the CI and FCI states by circularly polarized optical pumping in tMoTe$_2$. At low optical excitation power, we achieve on-demand preparation of ferromagnetic polarization by optical training, i.e., electrically tuning the system from non-ferromagnetic to desirable ferromagnetic states accompanied with helicity-selective optical pumping. With increased excitation power, we further realize direct optical switching of ferromagnetic polarization at a temperature far below the Curie temperature. Both optical training and direct switching of ferromagnetism are most effective near CI/FCI states, which we attribute to a gap enhanced valley polarization of photo-injected holes. We show that the magnetization can be dynamically switched by modulating the helicity of optical excitation. Spatially resolved measurements further demonstrate optical writing of a ferromagnetic, and thus a CI (or FCI) domain. Our work realizes precise optical control of a topological quantum many-body system with potential applications in topological spintronics, quantum memories, and creation of exotic edge states by programmable patterning of integer and fractional QAH domains.

cond-mat.mes-hall↗

arXiv2025

Dichotomy of flat bands in the van der Waals ferromagnet Fe$_5$GeTe$_2$

Quantum materials with bands of narrow bandwidth near the Fermi level represent a promising platform for exploring a diverse range of fascinating physical phenomena, as the high density of states within the small energy window often enables the emergence of many-body physics. On one hand, flat bands can arise from strong Coulomb interactions that localize atomic orbitals. On the other hand, quantum destructive interference can quench the electronic kinetic energy. Although both have a narrow bandwidth, the two types of flat bands should exhibit very distinct spectral properties arising from their distinctive origins. So far, the two types of flat bands have only been realized in very different material settings and chemical environments, preventing a direct comparison. Here, we report the observation of the two types of flat bands within the same material system--an above-room-temperature van der Waals ferromagnet, Fe$_{5-x}$GeTe$_2$, distinguishable by a switchable iron site order. The contrasting nature of the flat bands is also identified by the remarkably distinctive temperature-evolution of the spectral features, indicating that one arises from electron correlations in the Fe(1) site-disordered phase, while the other geometrical frustration in the Fe(1) site-ordered phase. Our results therefore provide a direct juxtaposition of the distinct formation mechanism of flat bands in quantum materials, and an avenue for understanding the distinctive roles flat bands play in the presence of magnetism, topology, and lattice geometrical frustration, utilizing sublattice ordering as a key control parameter.

cond-mat.str-el↗

arXiv2025

Interaction-driven flat band and charge order in Fe5GeTe2

Flat electronic bands enable fascinating emergent phenomena such as superconductivity and charge orders. A prevailing approach to realizing flat bands is to engineer lattice geometric constraints in twisted or kagome-like materials. An alternative approach is to utilize purely electronic-interaction-driven flat bands, yet a fundamental challenge is that extreme flatness requires ultrastrong interaction strength, which often leads to incoherent states. Here we demonstrate the concurrent formation of an interaction-driven flat band at the Fermi level and a $\sqrt{3}\times\sqrt{3}\,R30^\circ$ charge order in a van der Waals magnet Fe5GeTe2 using high-resolution angle-resolved photoemission spectroscopy. This charge order is manifested by band folding within 30 meV below the Fermi level, with its nesting driven by flat bands. The presence of this flat band throughout the Brillouin zone and the logarithmic temperature dependence of its spectral weight suggest a Kondo-like, coherent Fermi liquid emerging from strong correlations. Our work establishes a paradigm where an interaction-driven flat band promotes large-scale electronic ordering.

cond-mat.str-el↗

arXiv2025

Universal Magnetic Phases in Twisted Bilayer MoTe$_2$

Twisted bilayer MoTe$_2$ (tMoTe$_2$) has emerged as a robust platform for exploring correlated topological phases, notably supporting fractional Chern insulator (FCI) states at zero magnetic field across a wide range of twist angles. The evolution of magnetism and topology with twist angle remains an open question. Here, we systematically map the magnetic phase diagram of tMoTe$_2$ using local optical spectroscopy and scanning nanoSQUID-on-tip (nSOT) magnetometry. We identify spontaneous ferromagnetism at moir\'e filling factors $\nu = -1$ and $-3$ over a twist angle range from 2.1$^\circ$ to 3.7$^\circ$, revealing a universal, twist-angle-insensitive ferromagnetic phase. At 2.1$^\circ$, we further observe robust ferromagnetism at $\nu = -5$, absent in the devices with larger twist angle -- a signature of the flattening of higher bands in this twist angle range. Temperature-dependent measurements reveal a contrasting twist-angle dependence of the Curie temperatures between $\nu = -1$ and $\nu = -3$, indicating distinct interplay between exchange interaction and bandwidth for the two Chern bands. Despite spontaneous time-reversal symmetry breaking, we find no evidence of a topological gap at $\nu = -3$; however, fragile correlated topological phases could be obscured by the device disorder evident in our spatially resolved measurements. Our results establish a global framework for understanding and controlling magnetic order in tMoTe$_2$ and highlight its potential for accessing correlated topological phases in higher energy Chern band.

cond-mat.mes-hall↗

arXiv2025

Purcell enhancement of photogalvanic currents in a van der Waals plasmonic self-cavity

Cavities provide a means to manipulate the optical and electronic responses of quantum materials by selectively enhancing light-matter interaction at specific frequencies and momenta. While cavities typically involve external structures, exfoliated flakes of van der Waals (vdW) materials can form intrinsic self-cavities due to their small finite dimensions, confining electromagnetic fields into plasmonic cavity modes, characterized by standing-wave current distributions. While cavity-enhanced phenomena are well-studied at optical frequencies, the impact of self-cavities on nonlinear electronic responses--such as photogalvanic currents--remains largely unexplored, particularly in the terahertz regime, critical for emerging ultrafast optoelectronic technologies. Here, we report a self-cavity-induced Purcell enhancement of photogalvanic currents in the vdW semimetal WTe$_2$. Using ultrafast optoelectronic circuitry, we measured coherent near-field THz emission resulting from nonlinear photocurrents excited at the sample edges. We observed enhanced emission at finite frequencies, tunable via excitation fluence and sample geometry, which we attribute to plasmonic interference effects controlled by the cavity boundaries. We developed an analytical theory that captures the cavity resonance conditions and spectral response across multiple devices. Our findings establish WTe$_2$ as a bias-free, geometry-tunable THz emitter and demonstrate the potential of self-cavity engineering for controlling nonlinear, nonequilibrium dynamics in quantum materials.

cond-mat.mes-hall↗

arXiv2025

Engineering robust strain transmission in van der Waals heterostructure devices

Atomically thin van der Waals materials provide a highly tunable platform for exploring emergent quantum phenomena in solid state systems. Due to their remarkable mechanical strength, one enticing tuning knob is strain. However, the weak strain transfer of graphite and hBN, which are standard components of high-qualityvdW devices, poses fundamental challenges for high-strain experiments. Here, we investigate strain transmission in less-explored orthorhombic crystals and find robust transmission up to several percent at cryogenic temperatures. We further show that strain can be efficiently transferred through these crystals to other 2D materials in traditional heterostructure devices. Using this capability, we demonstrate in-situ strain and gate control of the optical properties of monolayer WS2 utilizing the high-\k{appa} dielectric insulator Bi2SeO5 as a substrate. These results enable the exploration of combined cryo-strain and gate tuning in a variety of layered systems such as moir\'e heterostructures, air-sensitive 2D magnets and superconductors, and any gated 2D device.

cond-mat.mes-hall↗

arXiv2025

Observation of High-Temperature Dissipationless Fractional Chern Insulator

The fractional quantum anomalous Hall effect has recently been experimentally observed in zero-field fractional Chern insulators (FCI). However, an outstanding challenge is the presence of a substantial longitudinal resistance $R_{xx}$ (a few k$\Omega$), even though the anomalous Hall resistance $R_{xy}$ is quantized. This dissipative behavior is likely linked to imperfect sample quality. Here, we report transport measurements of a drastically improved twisted $\text{MoTe}_2$ bilayer device, which exhibits quantized $R_{xy}$ and vanishing $R_{xx}$ for the $-2/3$ state, marking a dissipationless FCI. Contrary to fractional quantum Hall states where the energy gap increases with magnetic field, we find that the thermal activation gap of the observed FCI states decreases rapidly as the magnetic field rises from zero, then plateaus above a few teslas. This observation is attributed to the interplay between spin and charge gaps. Due to the spontaneous ferromagnetism, the spin gap dominates at low field, while the charge gap becomes appreciable once the magnetic field freezes spin fluctuations. For the $-2/3$ state, we estimate the spin and FCI gap of about 55 and 20 K, respectively. Our results provide insights into the energy scale of FCI and offer a pathway for quantum engineering of exotic correlated topological states.

cond-mat.mes-hall↗

arXiv2025

Visualizing Field-free Deterministic Magnetic Switching of all-van der Waals Spin-Orbit Torque System Using Spin Ensembles in Hexagonal Boron Nitride

Recently, optically active spin defects embedded in van der Waals (vdW) crystals have emerged as a transformative quantum sensing platform to explore cutting-edge materials science and quantum physics. Taking advantage of excellent solid-state integrability, this new class of spin defects can be arranged in controllable nanoscale proximity of target materials in vdW heterostructures, showing great promise for improving spatial resolution and field sensitivity of current sensing technologies. Building on this state-of-the-art measurement platform, here we report hexagonal boron nitride-based quantum imaging of field-free deterministic magnetic switching of room-temperature two-dimensional magnet Fe3GaTe2 in an all-vdW spin-orbit torque (SOT) system. By visualizing SOT-driven variations of nanoscale Fe3GaTe2 magnetic stray field profile under different conditions, we have revealed how the observed magnetic switching evolves from deterministic to indeterministic behavior due to the interplay between out-of-plane spins, in-plane spins and Joule heating. This understanding, which is otherwise difficult to access by conventional transport measurements, offers valuable insights on material design, testing, and evaluation of next-generation vdW spintronic devices.

cond-mat.mes-hall↗

arXiv2024

Nonperturbative Nonlinear Transport in a Floquet-Weyl Semimetal

Periodic laser driving, known as Floquet engineering, is a powerful tool to manipulate the properties of quantum materials. Using circularly polarized light, artificial magnetic fields, called Berry curvature, can be created in the photon-dressed Floquet-Bloch states that form. This mechanism, when applied to 3D Dirac and Weyl systems, is predicted to lead to photon-dressed movement of Weyl nodes which should be detectable in the transport sector. The transport response of such a topological light-matter hybrid, however, remains experimentally unknown. Here, we report on the transport properties of the type-II Weyl semimetal T$\mathrm{_d}$-MoTe$_\mathrm{2}$ illuminated by a femtosecond pulse of circularly polarized light. Using an ultrafast optoelectronic device architecture, we observed injection currents and a helicity-dependent anomalous Hall effect whose scaling with laser field strongly deviate from the perturbative laws of nonlinear optics. We show using Floquet theory that this discovery corresponds to the formation of a magnetic Floquet-Weyl semimetal state. Numerical ab initio simulations support this interpretation, indicating that the light-induced motion of the Weyl nodes contributes substantially to the measured transport signals. This work demonstrates the ability to generate large effective magnetic fields ($>$ 30T) with light, which can be used to manipulate the magnetic and topological properties of a range of quantum materials.

cond-mat.mes-hall↗

arXiv2024

An antiferromagnetic diode effect in even-layered MnBi2Te4

In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric superconductors, realizing the superconducting diode effect. Here, we show that, even in a centrosymmetric crystal without directional charge separation, the spins of an antiferromagnet (AFM) can generate a spatial directionality, leading to an AFM diode effect. We observe large second-harmonic transport in a nonlinear electronic device enabled by the compensated AFM state of even-layered MnBi2Te4. We also report a novel electrical sum-frequency generation (SFG), which has been rarely explored in contrast to the well-known optical SFG in wide-gap insulators. We demonstrate that the AFM enables an in-plane field-effect transistor and harvesting of wireless electromagnetic energy. The electrical SFG establishes a powerful method to study nonlinear electronics built by quantum materials. The AFM diode effect paves the way for potential device concepts including AFM logic circuits, self-powered AFM spintronics, and other applications that potentially bridge nonlinear electronics with AFM spintronics.

cond-mat.str-el↗

arXiv2024

Ferromagnetism and Topology of the Higher Flat Band in a Fractional Chern Insulator

The recent observation of the fractional quantum anomalous Hall effect in moir\'e fractional Chern insulators provides an opportunity to investigate zero magnetic field anyons. To potentially realize non-Abelian anyons, one approach is to engineer higher flat Chern bands that mimic higher Landau levels. Here, we investigate the interaction, topology, and ferromagnetism of the second moir\'e miniband in twisted MoTe2 bilayers. At half filling of the second miniband, we observe spontaneous ferromagnetism and an incipient Chern insulator state. The Chern numbers of the top two moir\'e flat bands exhibit opposite signs for twist angles above 3.1{\deg}, but share the same sign near 2.6{\deg}, consistent with theoretical predictions. In the 2.6{\deg} device, increasing magnetic field induces a topological phase transition via band crossing between opposite valleys, resulting in an emergent state with Chern number C = -2. Additionally, an insulating state at half filling of the second valley-polarized band suggests a charge-ordered state is favored over the fractional Chern insulator state. These findings lay a foundation for understanding the higher flat Chern bands, crucial for the discovery of non-Abelian fractional Chern insulators.

cond-mat.mes-hall↗