arXiv subjects

C. Neumann

Publications and source records attributed to C. Neumann.

9 recordsLinked to original sources

arXiv2025

Physically-Based Simulation of Automotive LiDAR

We present an analytic model for simulating automotive time-of-flight (ToF) LiDAR that includes blooming, echo pulse width, and ambient light, along with steps to determine model parameters systematically through optical laboratory measurements. The model uses physically based rendering (PBR) in the near-infrared domain. It assumes single-bounce reflections and retroreflections over rasterized rendered images from shading or ray tracing, including light emitted from the sensor as well as stray light from other, non-correlated sources such as sunlight. Beams from the sensor and sensitivity of the receiving diodes are modeled with flexible beam steering patterns and with non-vanishing diameter. Different (all non-real time) computational approaches can be chosen based on system properties, computing capabilities, and desired output properties. Model parameters include system-specific properties, namely the physical spread of the LiDAR beam, combined with the sensitivity of the receiving diode; the intensity of the emitted light; the conversion between the intensity of reflected light and the echo pulse width; and scenario parameters such as environment lighting, positioning, and surface properties of the target(s) in the relevant infrared domain. System-specific properties of the model are determined from laboratory measurements of the photometric luminance on different target surfaces aligned with a goniometer at 0.01{\deg} resolution, which marks the best available resolution for measuring the beam pattern. The approach is calibrated for and tested on two automotive LiDAR systems, the Valeo Scala Gen. 2 and the Blickfeld Cube 1. Both systems differ notably in their properties and available interfaces, but the relevant model parameters could be extracted successfully.

cs.RO↗

arXiv2020

Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

Monolayer transition metal dichalcogenides (TMD) have numerous potential applications in ultrathin electronics and photonics. The exposure of TMD based devices to light generates photo-carriers resulting in an enhanced conductivity, which can be effectively used, e.g., in photodetectors. If the photo-enhanced conductivity persists after removal of the irradiation, the effect is known as persistent photoconductivity (PPC). Here we show that ultraviolet light (wavelength = 365 nm) exposure induces an extremely long-living giant PPC (GPPC) in monolayer MoS2 (ML-MoS2) field-effect transistors (FET) with a time constant of ~30 days. Furthermore, this effect leads to a large enhancement of the conductivity up to a factor of 107. In contrast to previous studies in which the origin of the PPC was attributed to extrinsic reasons such as trapped charges in the substrate or adsorbates, we unambiguously show that the GPPC arises mainly from the intrinsic properties of ML-MoS2 such as lattice defects that induce a large amount of localized states in the forbidden gap. This finding is supported by a detailed experimental and theoretical study of the electric transport in TMD based FETs as well as by characterization of ML-MoS2 with scanning tunneling spectroscopy, high-resolution transmission electron microscopy, and photoluminescence measurements. The obtained results provide a basis towards the defect-based engineering of the electronic and optical properties of TMDs for device applications.

cond-mat.mes-hall↗

arXiv2018

Quantification of the weight of fingerprint evidence using a ROC-based Approximate Bayesian Computation algorithm for model selection

For more than a century, fingerprints have been used with considerable success to identify criminals or verify the identity of individuals. The categorical conclusion scheme used by fingerprint examiners, and more generally the inference process followed by forensic scientists, have been heavily criticised in the scientific and legal literature. Instead, scholars have proposed to characterise the weight of forensic evidence using the Bayes factor as the key element of the inference process. In forensic science, quantifying the magnitude of support is equally as important as determining which model is supported. Unfortunately, the complexity of fingerprint patterns render likelihood-based inference impossible. In this paper, we use an Approximate Bayesian Computation model selection algorithm to quantify the weight of fingerprint evidence. We supplement the ABC algorithm using a Receiver Operating Characteristic curve to mitigate the effect of the curse of dimensionality. Our modified algorithm is computationally efficient and makes it easier to monitor convergence as the number of simulations increase. We use our method to quantify the weight of fingerprint evidence in forensic science, but we note that it can be applied to any other forensic pattern evidence.

stat.ME↗

arXiv2017

Tailoring mechanically-tunable strain fields in graphene

There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly used so far either couple the electrical and mechanical properties of the system simultaneously or introduce some unwanted disturbances due to the substrate. Here, we report on silicon micro-machined comb-drive actuators to controllably and reproducibly induce strain in a suspended graphene sheet, in an entirely mechanical way. We use spatially resolved confocal Raman spectroscopy to quantify the induced strain, and we show that different strain fields can be obtained by engineering the clamping geometry, including tunable strain gradients of up to 1.4 %/$\mu$m. Our approach also allows for multiple axis straining and is equally applicable to other two-dimensional materials, opening the door to an investigating their mechanical and electromechanical properties. Our measurements also clearly identify defects at the edges of a graphene sheet as being weak spots responsible for its mechanical failure.

cond-mat.mtrl-sci↗

arXiv2015

Back action of graphene charge detectors on graphene and carbon nanotube quantum dots

We report on devices based on graphene charge detectors (CDs) capacitively coupled to graphene and carbon nanotube quantum dots (QDs). We focus on back action effects of the CD on the probed QD. A strong influence of the bias voltage applied to the CD on the current through the QD is observed. Depending on the charge state of the QD the current through the QD can either strongly increase or completely reverse as a response to the applied voltage on the CD. To describe the observed behavior we employ two simple models based on single electron transport in QDs with asymmetrically broadened energy distributions of the source and the drain leads. The models successfully explain the back action effects. The extracted distribution broadening shows a linear dependency on the bias voltage applied to the CD. We discuss possible mechanisms mediating the energy transfer between the CD and QD and give an explanation for the origin of the observed asymmetry.

cond-mat.mes-hall↗

arXiv2014

Raman spectroscopy on mechanically exfoliated pristine graphene ribbons

We present Raman spectroscopy measurements of non-etched graphene nanoribbons, with widths ranging from 15 to 160 nm, where the D-line intensity is strongly dependent on the polarization direction of the incident light. The extracted edge disorder correlation length is approximately one order of magnitude larger than on previously reported graphene ribbons fabricated by reactive ion etching techniques. This suggests a more regular crystallographic orientation of the non-etched graphene ribbons here presented. We further report on the ribbons width dependence of the line-width and frequency of the long-wavelength optical phonon mode (G-line) and the 2D-line of the studied graphene ribbons.

cond-mat.mes-hall↗

arXiv2013

Graphene-based charge sensors

We discuss graphene nanoribbon-based charge sensors and focus on their functionality in the presence of external magnetic fields and high frequency pulses applied to a nearby gate electrode. The charge detectors work well with in-plane magnetic fields of up to 7 T and pulse frequencies of up to 20 MHz. By analyzing the step height in the charge detector's current at individual charging events in a nearby quantum dot, we determine the ideal operation conditions with respect to the applied charge detector bias. Average charge sensitivities of 1.3*10^-3 e/sqrt{Hz} can be achieved. Additionally, we investigate the back action of the charge detector current on the quantum transport through a nearby quantum dot. By setting the charge detector bias from 0 to 4.5 mV, we can increase the Coulomb peak currents measured at the quantum dot by a factor of around 400. Furthermore, we can completely lift the Coulomb blockade in the quantum dot.

cond-mat.mes-hall↗

arXiv2007

HIRDES - The High-Resolution Double-Echelle Spectrograph for the World Space Observatory Ultraviolet (WSO/UV)

The World Space Observatory Ultraviolet (WSO/UV) is a multi-national project grown out of the needs of the astronomical community to have future access to the UV range. WSO/UV consists of a single UV telescope with a primary mirror of 1.7m diameter feeding the UV spectrometer and UV imagers. The spectrometer comprises three different spectrographs, two high-resolution echelle spectrographs (the High-Resolution Double-Echelle Spectrograph, HIRDES) and a low-dispersion long-slit instrument. Within HIRDES the 102-310nm spectral band is split to feed two echelle spectrographs covering the UV range 174-310nm and the vacuum-UV range 102-176nm with high spectral resolution (R>50,000). The technical concept is based on the heritage of two previous ORFEUS SPAS missions. The phase-B1 development activities are described in this paper considering performance aspects, design drivers, related trade-offs (mechanical concepts, material selection etc.) and a critical functional and environmental test verification approach. The current state of other WSO/UV scientific instruments (imagers) is also described.

astro-ph↗

arXiv1997

Symmetry breaking in crossed magnetic and electric fields

We present the first observations of cylindrical symmetry breaking in highly excited diamagnetic hydrogen with a small crossed electric field, and we give a semiclassical interpretation of this effect. As the small perpendicular electric field is added, the recurrence strengths of closed orbits decrease smoothly to a minimum, and revive again. This phenomenon, caused by interference among the electron waves that return to the nucleus, can be computed from the azimuthal dependence of the classical closed orbits.

physics.atom-ph↗