arXiv subjects

C. Monney

Publications and source records attributed to C. Monney.

At least 19 recordsLinked to original sources

arXiv2025

Ultrafast recovery dynamics of dimer stripes in IrTe2

The transition metal dichalcogenide IrTe2 displays a remarkable series of first-order phase transitions below room temperature, involving lattice displacements as large as 20 percents of the initial bond length. This is nowadays understood as the result of strong electron-phonon coupling leading to the formation of local multicentre dimers that arrange themselves into one-dimensional stripes. In this work, we study the out-of-equilibrium dynamics of these dimers and track the time evolution of their population following an infrared photoexcitation using free-electron lased-based time-resolved X-ray photoemission spectroscopy. First, we observe that the dissolution of dimers is driven by the transfer of energy from the electronic subsystem to the lattice subsystem, in agreement with previous studies. Second, we observe a surprisingly fast relaxation of the dimer population on the timescale of a few picoseconds. By comparing our results to published ultrafast electron diffraction and angle-resolved photoemission spectroscopy data, we reveal that the long-range order needs tens of picoseconds to recover, while the local dimer distortion recovers on a short timescale of a few picoseconds.

cond-mat.str-el↗

arXiv2025

Floquet topological state induced by light-driven band inversion in SnTe

High intensity coherent light can dress matter, realizing new hybrid phases that are not accessible in equilibrium. This effect results from the coherent interaction between Bloch states inside the solid and the periodic field of impinging photons which produces hybrid light-matter states called Floquet-Bloch states that can alter properties of the solid. Optically inducing a topological state in a semiconductor using so-called Floquet engineering is an exciting prospect. However, it has not been realized, despite its theoretical prediction more than 10 years ago. Here we show that an ultrashort-lived topological state that is absent at equilibrium in the ground state of SnTe can be created with femtosecond light pulses. This occurs when the photoexcitation is similar in energy with the band gap of this polar semiconductor. We observe a concomitant renormalization of the band dispersions that reveals the generation of Floquet states connecting to the topological state. We therefore provide the first direct experimental observation of a Floquet topological state and propose that it is driven by a light-induced band inversion in SnTe. Our discovery opens the way for controlling optically on-demand the topological properties of semiconductors.

cond-mat.str-el↗

arXiv2024

Bonding states underpinning structural transitions in IrTe$_2$ observed with micro-ARPES

Competing interactions in low-dimensional materials can produce nearly degenerate electronic and structural phases. We investigate the staircase of structural phase transitions in layered IrTe$_2$ for which a number of potential transition mechanisms have been postulated. The spatial coexistence of multiple phases on the micron scale has prevented a detailed analysis of the electronic structure. By exploiting micro-ARPES obtained with synchrotron radiation we extract the electronic structure of the multiple structural phases in IrTe$_2$ in order to address the mechanism underlying the phase transitions. We find direct evidence of lowered energy states that appear in the low-temperature phases, states previously predicted by \textit{ab initio} calculations and extended here. Our results validate a proposed scenario of bonding and anti-bonding states as the driver of the phase transitions.

cond-mat.mtrl-sci↗

arXiv2023

Carrier-Density Control of the Quantum-Confined 1$T$-TiSe$_2$ Charge-Density-Wave

Using angle-resolved photoemission spectroscopy, combined with first principle and coupled self-consistent Poisson-Schr\"odinger calculations, we demonstrate that potassium (K) atoms adsorbed on the low-temperature phase of 1$T$-TiSe$_2$ induce the creation of a two-dimensional electron gas (2DEG) and quantum confinement of its charge-density-wave (CDW) at the surface. By further changing the K coverage, we tune the carrier-density within the 2DEG that allows us to nullify, at the surface, the electronic energy gain due to exciton condensation in the CDW phase while preserving a long-range structural order. Our study constitutes a prime example of a controlled exciton-related many-body quantum state in reduced dimensionality by alkali-metal dosing.

cond-mat.mtrl-sci↗

arXiv2021

Excited-state band structure mapping

Angle-resolved photoelectron spectroscopy is an extremely powerful probe of materials to access the occupied electronic structure with energy and momentum resolution. However, it remains blind to those dynamic states above the Fermi level that determine technologically relevant transport properties. In this work, we extend band structure mapping into the unoccupied states and across the entire Brillouin zone by using a state-of-the-art high repetition rate, extreme ultraviolet fem- tosecond light source to probe optically excited samples. The wide-ranging applicability and power of this approach are demonstrated by measurements on the 2D semiconductor WSe2, where the energy-momentum dispersion of valence and conduction bands are observed in a single experiment. This provides a direct momentum-resolved view not only on the complete out-of-equilibrium band gap but also on its renormalization induced by electron-hole interaction and screening. Our work establishes a new benchmark for measuring the band structure of materials, with direct access to the energy-momentum dispersion of the excited-state spectral function.

cond-mat.mtrl-sci↗

arXiv2021

Insensitivity of the striped charge-orders in IrTe$_2$ to alkali surface doping implies their structural origin

We present a combined angle-resolved photoemission spectroscopy and low-energy electron diffraction (LEED) study of the prominent transition metal dichalcogenide IrTe$_2$ upon potassium (K) deposition on its surface. Pristine IrTe$_2$ undergoes a series of charge-ordered phase transitions below room temperature that are characterized by the formation of stripes of Ir dimers of different periodicities. Supported by density functional theory calculations, we first show that the K atoms dope the topmost IrTe$_2$ layer with electrons, therefore strongly decreasing the work function and shifting only the electronic surface states towards higher binding energy. We then follow the evolution of its electronic structure as a function of temperature across the charge-ordered phase transitions and observe that their critical temperatures are unchanged for K coverages of $0.13$ and $0.21$~monolayer (ML). Using LEED, we also confirm that the periodicity of the related stripe phases is unaffected by the K doping. We surmise that the charge-ordered phase transitions of IrTe$_2$ are robust against electron surface doping, because of its metallic nature at all temperatures, and due to the importance of structural effects in stabilizing charge order in IrTe$_2$.

cond-mat.str-el↗

arXiv2021

Ultrafast Dynamics of the Surface Photovoltage in Potassium Doped Black Phosphorus

Black phosphorus is a quasi-two-dimensional layered semiconductor with a narrow direct band gap of 0.3 eV. A giant surface Stark effect can be produced by the potassium doping of black phosphorus, leading to a semiconductor to semimetal phase transition originating from the creation of a strong surface dipole and associated band bending. By using time- and angle-resolved photoemission spectroscopy, we report the partial photoinduced screening of this band bending by the creation of a compensating surface photovoltage. We further resolve the detailed dynamics of this effect at the pertinent timescales and the related evolution of the band structure near the Fermi level. We demonstrate that after a fast rise time, the surface photovoltage exhibits a plateau over a few tens of picoseconds before decaying on the nanosecond timescale. We support our experimental results with simulations based on drift-diffusion equations.

cond-mat.mtrl-sci↗

arXiv2021

Probing the interplay between lattice dynamics and short-range magnetic correlations in CuGeO3 with femtosecond RIXS

Investigations of magnetically ordered phases on the femtosecond timescale have provided significant insights into the influence of charge and lattice degrees of freedom on the magnetic sub-system. However, short-range magnetic correlations occurring in the absence of long-range order, for example in spin-frustrated systems, are inaccessible to many ultrafast techniques. Here, we show how time-resolved resonant inelastic X-ray scattering (trRIXS) is capable of probing such short-ranged magnetic dynamics in a charge-transfer insulator through the detection of a Zhang-Rice singlet exciton. Utilizing trRIXS measurements at the O K-edge, and in combination with model calculations, we probe the short-range spin-correlations in the frustrated spin chain material CuGeO3 following photo-excitation, revealing a strong coupling between the local lattice and spin sub-systems.

cond-mat.str-el↗

arXiv2021

Observation of a uniaxial strain-induced phase transition in the 2D topological semimetal IrTe$_2$

Strain is ubiquitous in solid-state materials, but despite its fundamental importance and technological relevance, leveraging externally applied strain to gain control over material properties is still in its infancy. In particular, strain control over the diverse phase transitions and topological states in two-dimensional (2D) transition metal dichalcogenides (TMDs) remains an open challenge. Here, we exploit uniaxial strain to stabilize the long-debated structural ground state of the 2D topological semimetal IrTe$_2$, which is hidden in unstrained samples. Combined angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM) data reveal the strain-stabilized phase has a 6x1 periodicity and undergoes a Lifshitz transition, granting unprecedented spectroscopic access to previously inaccessible type-II topological Dirac states that dominate the modified inter-layer hopping. Supported by density functional theory (DFT) calculations, we show that strain induces a charge transfer strongly weakening the inter-layer Te bonds and thus reshaping the energetic landscape of the system in favor of the 6x1 phase. Our results highlight the potential to exploit strain-engineered properties in layered materials, particularly in the context of tuning inter-layer behavior.

cond-mat.str-el↗

arXiv2020

Nature of native atomic defects in ZrTe$_5$ and their impact on the low-energy electronic structure

Over the past decades, investigations of the anomalous low-energy electronic properties of ZrTe$_5$ have reached a wide array of conclusions. An open question is the growth method's impact on the stoichiometry of ZrTe$_5$ samples, especially given the very small density of states near its chemical potential. Here we report on high resolution scanning tunneling microscopy and spectroscopy measurements performed on samples grown via different methods. Using density functional theory calculations, we identify the most prevalent types of atomic defects on the surface of ZrTe$_5$, namely Te vacancies and intercalated Zr atoms. Finally, we precisely quantify their density and outline their role as ionized defects in the anomalous resistivity of this material.

cond-mat.mtrl-sci↗

arXiv2020

Mapping the unoccupied state dispersions in Ta$_2$NiSe$_5$ with resonant inelastic x-ray scattering

The transition metal chalcogenide Ta$_2$NiSe$_5$ undergoes a second-order phase transition at $T_c=328$ K involving a small lattice distortion. Below $T_c$, a band gap at the center of its Brillouin zone increases up to about 0.35 eV. In this work, we study the electronic structure of Ta$_2$NiSe$_5$ in its low-temperature semiconducting phase, using resonant inelastic x-ray scattering (RIXS) at the Ni $L_3$-edge. In addition to a weak fluorescence response, we observe a collection of intense Raman-like peaks that we attribute to electron-hole excitations. Using density functional theory calculations of its electronic band structure, we identify the main Raman-like peaks as interband transitions between valence and conduction bands. By performing angle-dependent RIXS measurements, we uncover the dispersion of these electron-hole excitations that allows us to extract the low-energy boundary of the electron-hole continuum. From the dispersion of the valence band measured by angle-resolved photoemission spectroscopy, we derive the effective mass of the lowest unoccupied conduction band.

cond-mat.str-el↗

arXiv2020

Unveiling the complete dispersion of the giant Rashba split surface states of ferroelectric $\alpha$-GeTe(111) by alkali doping

$\alpha$-GeTe(111) is a non-centrosymmetric ferroelectric material, for which a strong spin-orbit interaction gives rise to giant Rashba split states in the bulk and at the surface. The detailed dispersions of the surface states inside the bulk band gap remains an open question because they are located in the unoccupied part of the electronic structure, making them inaccessible to static angle-resolved photoemission spectroscopy. We show that this difficulty can be overcome via in-situ potassium doping of the surface, leading to a rigid shift of 80 meV of the surface states into the occupied states. Thus, we resolve in great detail their dispersion and highlight their crossing at the $\bar{\Gamma}$ point, which, in comparison with density functional theory calculations, definitively confirms the Rashba mechanism.

cond-mat.mtrl-sci↗

arXiv2019

Examining the surface phase diagram of IrTe$_2$ with photoemission

In the transition metal dichalcogenide IrTe$_2$, low-temperature charge-ordered phase transitions involving Ir dimers lead to the occurrence of stripe phases of different periodicities, and nearly degenerate energies. Bulk-sensitive measurements have shown that, upon cooling, IrTe$_2$ undergoes two such first-order transitions to $(5\times1\times5)$ and $(8\times1\times8)$ reconstructed phases at $T_{c_1}\sim 280$~K and $T_{c_2}\sim 180$~K, respectively. Here, using surface sensitive probes of the electronic structure of IrTe$_2$, we reveal the first-order phase transition at $T_{c_3}=165$~K to the $(6\times1)$ stripes phase, previously proposed to be the surface ground state. This is achieved by combining x-ray photoemission spectroscopy and angle-resolved photoemission spectroscopy, which give access to the evolution of stripe domains and a particular surface state, the energy of which is dependent on the Ir dimer length. By performing measurements over a full thermal cycle, we also report the complete hysteresis of all these phases.

cond-mat.str-el↗

arXiv2019

Unveiling the Semimetallic Nature of 1$T$-TiSe$_2$ by Doping its Charge Density Wave

The semimetallic or semiconducting nature of the transition metal dichalcogenide 1$T$-TiSe$_2$ remains under debate after many decades mainly due to the fluctuating nature of its 2 $\times$ 2 $\times$ 2 charge-density-wave (CDW) phase at room-temperature. In this letter, using angle-resolved photoemission spectroscopy, we unambiguously demonstrate that the 1$T$-TiSe$_2$ normal state is semimetallic with an electron-hole band overlap of $\sim$110 meV by probing the low-energy electronic states of the perturbed CDW phase strongly doped by alkali atoms. Our study not only closes a long-standing debate but also supports the central role of the Fermi surface for driving the CDW and superconducting instabilities in 1$T$-TiSe$_2$.

cond-mat.str-el↗

arXiv2018

Semimetal-to-semiconductor transition and charge-density-wave melting in $1T$-TiSe$_{2-x}$S$_x$ single crystals

The transition metal dichalcogenide $1T$-TiSe$_2$ is a quasi-two-dimensional layered material with a phase transition towards a commensurate charge density wave (CDW) at a critical temperature T$_{c}\approx 200$K. The relationship between the origin of the CDW instability and the semimetallic or semiconducting character of the normal state, i.e., with the non-reconstructed Fermi surface topology, remains elusive. By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and density functional theory (DFT) calculations, we investigate $1T$-TiSe$_{2-x}$S$_x$ single crystals. Using STM, we first show that the long-range phase coherent CDW state is stable against S substitutions with concentrations at least up to $x=0.34$. The ARPES measurements then reveal a slow but continuous decrease of the overlap between the electron and hole ($e$-$h$) bands of the semimetallic normal-state well reproduced by DFT and related to slight reductions of both the CDW order parameter and $T_c$. Our DFT calculations further predict a semimetal-to-semiconductor transition of the normal state at a higher critical S concentration of $x_c$=0.9 $\pm$0.1, that coincides with a melted CDW state in TiSeS as measured with STM. Finally, we rationalize the $x$-dependence of the $e$-$h$ band overlap in terms of isovalent substitution-induced competing chemical pressure and charge localization effects. Our study highlights the key role of the $e$-$h$ band overlap for the CDW instability.

cond-mat.mtrl-sci↗

arXiv2018

Phase Separation in the Vicinity of Fermi Surface Hot Spots

Spatially inhomogeneous electronic states are expected to be key ingredients for the emergence of superconducting phases in quantum materials hosting charge-density-waves (CDWs). Prototypical materials are transition-metal dichalcogenides (TMDCs) and among them, 1$T$-TiSe$_2$ exhibiting intertwined CDW and superconducting states under Cu intercalation, pressure or electrical gating. Although it has been recently proposed that the emergence of superconductivity relates to CDW fluctuations and the development of spatial inhomogeneities in the CDW order, the fundamental mechanism underlying such a phase separation (PS) is still missing. Using angle-resolved photoemission spectroscopy and variable-temperature scanning tunneling microscopy, we report on the phase diagram of the CDW in 1$T$-TiSe$_2$ as a function of Ti self-doping, an overlooked degree of freedom inducing CDW texturing. We find an intrinsic tendency towards electronic PS in the vicinity of Fermi surface (FS) "hot spots", i.e. locations with band crossings close to, but not at the Fermi level. We therefore demonstrate an intimate relationship between the FS topology and the emergence of spatially textured electronic phases which is expected to be generalizable to many doped CDW compounds.

cond-mat.mtrl-sci↗

arXiv2018

Time- and angle-resolved photoemission spectroscopy of solids in the extreme ultraviolet at 500 kHz repetition rate

Time- and angle-resolved photoelectron spectroscopy (trARPES) employing a 500 kHz extreme-ultravioled (XUV) light source operating at 21.7 eV probe photon energy is reported. Based on a high-power ytterbium laser, optical parametric chirped pulse amplification (OPCPA), and ultraviolet-driven high-harmonic generation, the light source produces an isolated high-harmonic with 110 meV bandwidth and a flux of more than $10^{11}$ photons/second on the sample. Combined with a state-of-the-art ARPES chamber, this table-top experiment allows high-repetition rate pump-probe experiments of electron dynamics in occupied and normally unoccupied (excited) states in the entire Brillouin zone and with a temporal system response function below 40 fs.

physics.ins-det↗

arXiv2018

Robustness of the charge-ordered phases in IrTe$_2$ against photoexcitation

We present a time-resolved angle-resolved photoelectron spectroscopy study of IrTe$_2$, which undergoes two first-order structural and charge-ordered phase transitions on cooling below 270 K and below 180 K. The possibility of inducing a phase transition by photoexcitation with near-infrared femtosecond pulses is investigated in the charge-ordered phases. We observe changes of the spectral function occuring within a few hundreds of femtoseconds and persisting up to several picoseconds, which we interpret as a partial photoinduced phase transition (PIPT). The necessary time for photoinducing these spectral changes increases with increasing photoexcitation density and reaches timescales longer than the rise time of the transient electronic temperature. We conclude that the PIPT is driven by a transient increase of the lattice temperature following the energy transfer from the electrons. However, the photoinduced changes of the spectral function are small, which indicates that the low temperature phase is particularly robust against photoexcitation. We suggest that the system might be trapped in an out-of-equilibrium state, for which only a partial structural transition is achieved.

cond-mat.str-el↗