arXiv subjects

C. Mathieu

Publications and source records attributed to C. Mathieu.

14 recordsLinked to original sources

arXiv2024

LEEx-B: Low Energy Experimental Bench Development at IPHC-CNRS Strasbourg

As a part of future developments of beam diagnostics, a low energy experimental bench (LEEx-B) has been recently designed, built and commissioned at IPHC-CNRS of Strasbourg. The bench is composed of a Cs+ ion gun installed on a HV platform and providing beams up to 25 keV. A beam profiler and an Allison-type emittance-meter allow the qualification of the setup and also the characterization of the beam. During the commissioning process, the electronics, and the control system were upgraded in order to push the limits towards low beam currents measured by the emittance-meter.

physics.acc-ph↗

arXiv2022

Design and Commissioning of the first two CYRC\'e Extension Beamlines

CYRC\'e is a TR24 cyclotron installed at the Institut Pluridisciplinaire Hubert Curien (IPHC) of Strasbourg operating at energies of 16-25 MeV and at intensities up to 400 $\mu$A. The accelerator is used to produce and provide radioelements for PET and for SPECT. In 2015, IPHC started to develop a platform with the aim of performing radiobiological experiments. The PRECy platform foresees to contain three-to-five experimental stations linked to beamlines expanded from the second exit port of the cyclotron. This extension allows devoting one of the beamlines for detector studies within the framework of the CMS project. The design, the development and the commissioning of the first two beamlines are discussed in this paper.

physics.acc-ph↗

arXiv2019

New front and back-end electronics for the upgraded GABRIELA detection system

The GABRIELA [1] set-up is used at the FLNR to perform detailed nuclear structure studies of transfermium nuclei. Following the modernization of the VASSILISSA separator (SHELS) [2] the GABRIELA detection system has also been upgraded. The characteristics of the upgraded detection system will be presented along with results from some recent electronics tests.

physics.ins-det↗

arXiv2019

Recent Results from Polycrystalline CVD Diamond Detectors

Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse height versus particle rate of unirradiated and irradiated polycrystalline CVD (pCVD) diamond pad detectors up to a particle flux of $20\,\mathrm{MHz/cm^2}$ and a fluence up to $4 \times 10^{15}\,n/\mathrm{cm^2}$.

physics.ins-det↗

arXiv2018

Exploring interlayer Dirac cone coupling in commensurately rotated few-layer graphene on SiC(000-1)

We investigate electronic band-structure images in reciprocal space of few layer graphene epitaxially grown on SiC(000-1). In addition to the observation of commensurate rotation angles of the graphene layers, the k-space images recorded near the Fermi edge highlight structures originating from diffraction of the Dirac cones due to the relative rotation of adjacent layers. The 21.9{\deg} and 27{\deg} rotation angles between two sheets of graphene are responsible for a periodic pattern that can be described with a superlattice unit cells. The superlattice generates replicas of Dirac cones with smaller wave vectors, due to a Brillouin zone folding.

cond-mat.mtrl-sci↗

arXiv2018

Full field electron spectromicroscopy applied to ferroelectric materials

The application of PhotoEmission Electron Microscopy (PEEM) and Low Energy Electron Microscopy (LEEM) techniques to the study of the electronic and chemical structure of ferroelectric materials is reviewed. Electron optics in both techniques gives spatial resolution of a few tens of nanometres. PEEM images photoelectrons whereas LEEM images reflected and elastically backscattered electrons. Both PEEM and LEEM can be used in direct and reciprocal space imaging. Together, they provide access to surface charge, work function, topography, chemical mapping, surface crystallinity and band structure. Examples of applications for the study of ferroelectric thin films and single crystals are presented.

cond-mat.mtrl-sci↗

arXiv2018

Charge spill-out and work function of few-layer graphene on SiC(0001)

We report on the charge spill-out and work function of epitaxial few-layer graphene on 6H-SiC(0001). Experiments from high-resolution, energy-filtered X-ray photoelectron emission microscopy (XPEEM) are combined with ab initio Density Functional Theory calculations using a relaxed interface model. Work function values obtained from theory and experiments are in qualitative agreement, reproducing the previously observed trend of increasing work function with each additional graphene plane. Electrons transfer at the SiC/graphene interface through a buffer layer causes an interface dipole moment which is at the origin of the graphene work function modulation. The total charge transfer is independent of the number of graphene layers, and is consistent with the constant binding energy of the SiC component of the C 1s core-level measured by XPEEM. Charge leakage into vacuum depends on the number of graphene layers explaining why the experimental, layer-dependent C 1s-graphene core-level binding energy shift does not rigidly follow that of the work function. Thus, a combination of charge transfer at the SiC/graphene interface and charge spill-out into vacuum resolves the apparent discrepancy between the experimental work function and C1s binding energy.

cond-mat.mtrl-sci↗

arXiv2018

Polarization sensitive surface band structure of doped BaTiO3(001)

We present a spatial and wave-vector resolved study of the electronic structure of micron sized ferroelectric domains at the surface of a BaTiO3(001) single crystal. The n-type doping of the BaTiO3 is controlled by in-situ vacuum and oxygen annealing, providing experimental evidence of a surface paraelectric-ferroelectric transition below a critical doping level. Real space imaging of photoemission threshold, core level and valence band spectra show contrast due to domain polarization. Reciprocal space imaging of the electronic structure using linearly polarized light provides unambiguous evidence for the presence of both in and out-of plane polarization with two and fourfold symmetry, respectively. The results agree well with first principles calculations.

cond-mat.mtrl-sci↗

arXiv2018

Control of surface potential at polar domain walls in a nonpolar oxide

Ferroic domain walls could play an important role in microelectronics, given their nanometric size and often distinct functional properties. Until now, devices and device concepts were mostly based on mobile domain walls in ferromagnetic and ferroelectric materials. A less explored path is to make use of polar domain walls in nonpolar ferroelastic materials. Indeed, while the polar character of ferroelastic domain walls has been demonstrated, polarization control has been elusive. Here, we report evidence for the electrostatic signature of the domain-wall polarization in nonpolar calcium titanate (CaTiO3). Macroscopic mechanical resonances excited by an ac electric field are observed as a signature of a piezoelectric response caused by polar walls. On the microscopic scale, the polarization in domain walls modifies the local surface potential of the sample. Through imaging of surface potential variations, we show that the potential at the domain wall can be controlled by electron injection. This could enable devices based on nondestructive information readout of surface potential.

cond-mat.mtrl-sci↗

arXiv2016

Characterization of PARIS LaBr$_3$(Ce)-NaI(Tl) phoswich detectors upto $E_\gamma$ $\sim$ 22 MeV

In order to understand the performance of the PARIS (Photon Array for the studies with Radioactive Ion and Stable beams) detector, detailed characterization of two individual phoswich (LaBr$_3$(Ce)-NaI(Tl)) elements has been carried out. The detector response is investigated over a wide range of $E_{\gamma}$ = 0.6 to 22.6 MeV using radioactive sources and employing $^{11}B(p,\gamma)$ reaction at $E_p$ = 163 keV and $E_p$ = 7.2 MeV. The linearity of energy response of the LaBr$_3$(Ce) detector is tested upto 22.6 MeV using three different voltage dividers. The data acquisition system using CAEN digitizers is set up and optimized to get the best energy and time resolution. The energy resolution of $\sim$ 2.1% at $E_\gamma$ = 22.6~MeV is measured for the configuration giving best linearity upto high energy. Time resolution of the phoswich detector is measured with a $^{60}$Co source after implementing CFD algorithm for the digitized pulses and is found to be excellent (FWHM $\sim$ 315~ps). In order to study the effect of count rate on detectors, the centroid position and width of the $E_{\gamma}$ = 835~keV peak were measured upto 220 kHz count rate. The measured efficiency data with radioactive sources are in good agreement with GEANT4 based simulations. The total energy spectrum after the add-back of energy signals in phoswich components is also presented.

physics.ins-det↗

arXiv2012

Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption

In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50 μ\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance plateau quantized at filling factor around $ν= 2$, an evidence of monolayer graphene. We find low electron concentration of $9\times 10^{11} \textrm{cm}^{-2}$ and we show that a doping of $10^{13}\textrm{cm}^{-2}$ which is characteristic of intrinsic epitaxial graphene can be restored by vacuum annealing. The effect of oxygen adsorption on carrier density is confirmed by local angle-resolved photoemission spectroscopy measurements. These results are important for understanding oxygen adsorption on epitaxial graphene and for its application to metrology and mesoscopic physics where a low carrier concentration is required.

cond-mat.mes-hall↗

arXiv2012

Effect of Oxygen Adsorption on the Local Properties of Epitaxial Graphene on SiC (0001)

The effect of oxygen adsorption on the local structure and electronic properties of monolayer graphene grown on SiC(0001) has been studied by means of Low Energy Electron Microscopy (LEEM), microprobe Low Energy Electron Diffraction (\muLEED) and microprobe Angle Resolved Photoemission (\muARPES). We show that the buffer layer of epitaxial graphene on SiC(0001) is partially decoupled after oxidation. The monitoring of the oxidation process demonstrates that the oxygen saturates the Si dangling bonds, breaks some Si-C bonds at the interface and intercalates the graphene layer. Accurate control over the oxidation parameters enables us to tune the charge density modulation in the layer.

cond-mat.mtrl-sci↗

arXiv2011

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the sample is covered by 2-3 graphene layers. C1s spectromicroscopy provides an independent measurement of the graphene thickness distribution map. The work function, measured by photoelectron emission microscopy (PEEM), varies across the surface from 4.34 to 4.50eV according to both the graphene thickness and the graphene-SiC interface chemical state. At least two SiC surface chemical states (i.e., two different SiC surface structures) are present at the graphene/SiC interface. Charge transfer occurs at each graphene/SiC interface. K-space PEEM gives 3D maps of the k_|| pi - pi* band dispersion in micron scale regions show that the Dirac point shifts as a function of graphene thickness. Novel Bragg diffraction of the Dirac cones via the superlattice formed by the commensurately rotated graphene sheets is observed. The experiments underline the importance of lateral and spectroscopic resolution on the scale of future electronic devices in order to precisely characterize the transport properties and band alignments.

cond-mat.mtrl-sci↗

arXiv2009

Recognizing well-parenthesized expressions in the streaming model

Motivated by a concrete problem and with the goal of understanding the sense in which the complexity of streaming algorithms is related to the complexity of formal languages, we investigate the problem Dyck(s) of checking matching parentheses, with $s$ different types of parenthesis. We present a one-pass randomized streaming algorithm for Dyck(2) with space $\Order(\sqrt{n}\log n)$, time per letter $\polylog (n)$, and one-sided error. We prove that this one-pass algorithm is optimal, up to a $\polylog n$ factor, even when two-sided error is allowed. For the lower bound, we prove a direct sum result on hard instances by following the "information cost" approach, but with a few twists. Indeed, we play a subtle game between public and private coins. This mixture between public and private coins results from a balancing act between the direct sum result and a combinatorial lower bound for the base case. Surprisingly, the space requirement shrinks drastically if we have access to the input stream in reverse. We present a two-pass randomized streaming algorithm for Dyck(2) with space $\Order((\log n)^2)$, time $\polylog (n)$ and one-sided error, where the second pass is in the reverse direction. Both algorithms can be extended to Dyck(s) since this problem is reducible to Dyck(2) for a suitable notion of reduction in the streaming model.

cs.DS↗