arXiv subjects

C. Fleta

Publications and source records attributed to C. Fleta.

8 recordsLinked to original sources

arXiv2026

Gamma irradiation of ATLAS18 ITk strip sensors affected by static charge

Construction of the new all-silicon ITk, developed by the ATLAS collaboration to be able to track charged particles produced at the HL- LHC, started in 2021 and is expected to continue until 2028. The ITk detector will include ~18,000 highly segmented and radiation hard n+-in-p silicon strip sensors, which are being manufactured by HPK. Upon their delivery, the ATLAS ITk strip sensor collaboration performs detailed measurements of sensors to monitor quality of all fabricated pieces. QC electrical tests include IV and CV tests, full strip tests, and a measurement of the long-term stability of the sensor leakage current. While most sensors demonstrate excellent performance during QC testing, we have nevertheless observed that a number of sensors from several production batches failed the electrical tests. Accumulated data indicates a strong correlation between observed electrical test failures and high electrostatic charge measured on the sensor surface during initial reception tests. This electrostatic charge enhances the risk of "Local trapped charge" events during manufacturing, shipping, and handling procedures, resulting in failed electrical QC tests. In the presented study, we have investigated whether the TID expected in the real experiment can effectively resolve early breakdown or low interstrip isolation caused by the electrostatic charge. Selected charge-affected sensors were irradiated with gamma rays from a 60Co source for a number of TID values. The results of this study indicate that the negative effects of the electrostatic charge on the critical sensors characteristics disappear after a very small amount of an accumulated TID, which actually corresponds to one or two days in the experiment. This finding gives us confidence in mitigating the issue of electrostatic charge during the operation of the ITk strip sensors in the real experiment.

physics.ins-det↗

arXiv2024

Evolution of the electrical characteristics of the ATLAS18 ITk strip sensors with HL-LHC radiation exposure range

The objective of the study is to evaluate the evolution of the performance of the new ATLAS Inner-Tracker (ITk) strip sensors as a function of radiation exposure, to ensure the proper operation of the upgraded detector during the lifetime of the High-Luminosity Large Hadron Collider (HL-LHC). Full-size ATLAS ITk Barrel Short-Strip (SS) sensors with final layout design, ATLAS18SS, have been irradiated with neutrons and gammas, to confirm the results obtained with prototypes and miniature sensors during the development phase. The irradiations cover a wide range of fluences and doses that ITk will experience, going from 1e13 neq/cm2 and 0.49 Mrad, to 1.6e15 neq/cm2 and 80 Mrad. The split irradiation enables a proper combination of fluence and dose values of the HL-LHC, including a 1.5 safety factor. A complete electrical characterization of the key sensor parameters before and after irradiation is presented, studying the leakage current, bulk capacitance, single-strip and inter-strip characteristics. The results confirm the fulfilment of the ATLAS specifications throughout the whole experiment. The study of a wide range of fluences and doses also allows to obtain detailed results, such as the frequency dependence of the bulk capacitance measurements for highly irradiated sensors, or the evolution of the punch-through protection and inter-strip resistance with radiation.

physics.ins-det↗

arXiv2021

Mapping the in-plane electric field inside irradiated diodes

A significant aspect of the Phase-II Upgrade of the ATLAS detector is the replacement of the current Inner Detector with the ATLAS Inner Tracker (ITk). The ATLAS ITk is an all-silicon detector consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker have been developed to withstand the high radiation environment in the ATLAS detector after the High Luminosity Upgrade of the Large Hadron Collider at CERN, which will significantly increase the rate of particle collisions and resulting particle tracks. During their operation in the ATLAS detector, sensors for the ITk strip tracker are expected to accumulate fluences up to 1.6 x 10^15 n_eq/cm^2 (including a safety factor of 1.5), which will significantly affect their performance. One characteristic of interest for highly irradiated sensors is the shape and homogeneity of the electric field inside its active area. For the results presented here, diodes with edge structures similar to full size ATLAS sensors were irradiated up to fluences comparable to those in the ATLAS ITk strip tracker and their electric fields mapped using a micro-focused X-ray beam (beam diameter 2x3 {\mu}m^2). This study shows the extension and shape of the electric field inside highly irradiated diodes over a range of applied bias voltages. Additionally, measurements of the outline of the depleted sensor areas allow a comparison of the measured leakage current for different fluences with expectations for the corresponding active areas.

physics.ins-det↗

arXiv2017

Prototyping of petalets for the Phase-II Upgrade of the silicon strip tracking detector of the ATLAS Experiment

In the high luminosity era of the Large Hadron Collider, the HL-LHC, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The ITk consists of a silicon pixel and a strip detector and exploits the concept of modularity. Prototyping and testing of various strip detector components has been carried out. This paper presents the developments and results obtained with reduced-size structures equivalent to those foreseen to be used in the forward region of the silicon strip detector. Referred to as petalets, these structures are built around a composite sandwich with embedded cooling pipes and electrical tapes for routing the signals and power. Detector modules built using electronic flex boards and silicon strip sensors are glued on both the front and back side surfaces of the carbon structure. Details are given on the assembly, testing and evaluation of several petalets. Measurement results of both mechanical and electrical quantities are shown. Moreover, an outlook is given for improved prototyping plans for large structures.

physics.ins-det↗

arXiv2016

Ultra Thin 3D Silicon Detector for Plasma Diagnostics at the ITER Tokamak

An ultra thin silicon detector called U3DTHIN has been designed and built for neutral particle analyzers (NPA) and thermal neutron detection. The main purpose of this detector is to provide a state-of-the-art solution for detector system of NPAs for the ITER experimental reactor and to be used in combination with a Boron conversion layer for the detection of thermal neutrons. Currently the NPAs are using very thin scintillator - photomultiplier tube, and their main drawbacks are poor energy resolution, intrinsic scintillation nonlinearity, relative low count rate capability and finally poor signal to background discrimination power for the low energy channels. The proposed U3DTHIN detector is based on very thin sensitive substrate which will provide nearly 100% detection efficiency for ions and at the same time very low sensitivity for the neutron and gamma radiation. To achieve a very fast charge collection of the carriers generated by the ions detection a 3D electrode structure[5] has been introduced in the sensitive volume of the detector. One of the most innovative features of these detectors has been the optimal combination of the thin entrance window and the sensitive substrate thickness, to accommodate very large energy dynamic range of the detected ions. An entrance window with a thickness of tens of nanometers together with a sensitive substrate thickness varying from less than 5 microns, to detect the lowest energetic ions to 20 microns for the height ones has been selected after simulations with GEANT4. To increase the signal to background ratio the detector will operate in spectroscopy regime allowing to perform pulse-height analysis. The technology used to fabricate these 3D ultra thin detectors developed at Centro Nacional de Microelectronica in Barcelona and the first signals from an alpha source (241Am) will presented

physics.ins-det↗

arXiv2013

Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector

Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper.

physics.ins-det↗

arXiv2011

Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.

physics.ins-det↗

arXiv2005

Magnetoelectric Coupling in epsilon-Fe2O3

Nanoparticles of the ferrimagnetic epsilon-Fe2O3 oxide have been synthesized by sol-gel method. Here, we report on the measurements of the dielectric permittivity as a function of temperature, frequency and magnetic field. It is found that, coinciding with the transition from collinear ferrimagnetic ordering to an incommensurate magnetic state occurring at about 100 K, there is an abrupt change (about 30 %) of permittivity suggesting the existence of a magnetoelectric coupling in this material. Indeed, magnetic field dependent measurements at 100 K have revealed an increase of the permittivity by about 0.3 % in 6 T. Prospective advantages of epsilon-Fe2O3 as multiferroic material are discussed.

cond-mat.mtrl-sci↗