arXiv subjects

C. Acha

Publications and source records attributed to C. Acha.

At least 19 recordsLinked to original sources

arXiv2025

Thermal tuning of dynamic response in Ag-based nanowire networks

Self-assembled networks of metallic nanowires (NWs) are being intensively explored as test benches for neuromorphic proposals. In this work, we study the electric transport properties of dense self-assembled networks of Ag-based NWs (AgNWNs) coated with a thin insulating layer, using DC and AC stimuli. The building blocks of this network are the metallic NWs and the NW-NW junctions, either metallic or memristive. In the pristine state, frequency independence of the impedance reveals an over-percolated purely resistive network. A combination of low-temperature annealing and AC stimulus is shown to drastically affect the resistivity of the sample (interpreted as a depopulation of purely metallic junctions), unveiling a rich dynamic response. This procedure triggers the achievement of a capacitive response, which is successfully rationalized using a previously introduced 'two junction model'. Thermal treatment appears to be an indirect strategy to effectively modify the humidity content at the NW-NW intersections and, consequently, enable multiple switching schemes suitable for brain-like processing alternatives.

cond-mat.mtrl-sci↗

arXiv2025

Electric transport as a probe to unveil microscopic aspects of oxygen-depleted YBCO

We report on the characterization of Pt-YBa$_2$Cu$_3$O$_{7-\delta}$ interfaces, focusing on how oxygen vacancies content ($\delta$) affects electrical transport mechanisms. Our study examines four Pt-YBa$_2$Cu$_3$O$_{7-\delta}$ samples with varying $\delta$ (0.12 $\leq \delta \leq$ 0.56) using voltage-current measurements across a temperature range. We successfully model the electrical behavior using a Poole-Frenkel conduction framework, revealing that oxygen vacancies create potential wells that trap carriers, directly influencing conduction. We observe that the energy of these traps increases as $\delta$ rises, in agreement with a peak previously detected in optical conductivity measurements. This result supports earlier interpretations, strengthening the proposed connection between oxygen vacancies and the ionization energy associated with impurity bands in YBa$_2$Cu$_3$O$_{7-\delta}$.

cond-mat.dis-nn↗

arXiv2021

Proton irradiation effects on metal-YBCO interfaces

10 MeV proton-irradiation effects on a YBCO-based test structure were analyzed by measuring its current-voltage (IV) characteristics for different cumulated fluences. For fluences of up to $\sim$80$\cdot$10$^9$~p/cm$^2$ no changes in the electrical behavior of the device were observed, while for a fluence of $\sim$~300$\cdot$10$^9~$ p/cm$^2$ it becomes less conducting. A detailed analysis of the room temperature IV characteristics based on the $\gamma$ power exponent parameter [$\gamma=dLn(I)/dLn(V)$] allowed us to reveal the main conduction mechanisms as well as to establish the equivalent circuit model of the device. The changes produced in the electrical behavior, in accordance with Monte Carlo TRIM simulations, suggest that the main effect induced by protons is the displacement of oxygen atoms within the YBCO lattice, particularly from oxygen-rich to oxygen-poor areas, where they become trapped.

cond-mat.mtrl-sci↗

arXiv2020

YBCO-based non-volatile ReRAM tested in Low Earth Orbit

An YBCO-based test structure corresponding to the family of ReRAM devices associated with the valence change mechanism is presented. We have characterized its electrical response previous to its lift-off to a Low Earth Orbit (LEO) using standard electronics and also with the dedicated LabOSat-01 controller. Similar results were obtained in both cases. After about 200 days at LEO on board a small satellite, electrical tests started on the memory device using the LabOSat-01 controller. We discuss the results of the first 150 tests, performed along a 433-day time interval in space. The memory device remained operational despite the hostile conditions that involved launching, lift-off vibrations, permanent thermal cycling and exposure to ionizing radiation, with doses 3 orders of magnitude greater than the usual ones on Earth. The device showed resistive switching and IV characteristics similar to those measured on Earth, although with changes that follow a smooth drift in time. A detailed study of the electrical transport mechanisms, based on previous models that indicate the existence of various conducting mechanisms through the metal-YBCO interface showed that the observed drift can be associated with a local temperature drift at the LabOSat controller, with no clear evidence that allows determining changes in the underlying microscopic factors. These results show the reliability of complex-oxide non-volatile ReRAM-based devices in order to operate under all the hostile conditions encountered in space-borne applications.

physics.app-ph↗

arXiv2020

Electrical conduction mechanisms of metal / high-Tc superconductor (YBCO) interfaces

Current-voltage characteristics of Au~/~YBa$_2$Cu$_3$O$_{7-\delta}$ interfaces (Au/YBCO), built on optimally-doped YBCO thin films, grown by pulsed laser deposition, were measured as a function of temperature in the 50 K to 270 K range, for two different resistance states. A non-trivial equivalent circuit model is proposed, which reveals the existence of a highly inhomogeneous scenario composed by two complex layers: one presenting both a non-linear Poole-Frenkel conduction as well as Variable Range Hopping localization effects (probably associated with YBa$_2$Cu$_3$O$_{6}$) mixed with a minor metallic phase, while the other is also composed by a mixture of YBCO with different oxygen contents, where a metallic ohmic phase still percolates. A microscopic description of the effects produced by the resistance switching is given, showing the evolution of carrier traps, localization effects and dielectric behavior for each state. The dielectric behavior is interpreted in terms of a Maxwell-Wagner scenario.

cond-mat.mtrl-sci↗

arXiv2019

Electric selective activation of memristive interfaces in TaO$_x$-based devices

The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta$_2$O$_5$-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling the (a)symmetry of the applied stimuli and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different zones of the active Ta$_2$O$_{5-x}$ layer: a central -- bulk -- one and two quasi-symmetric interfaces with reduced TaO$_{2-h(y)}$ layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide -- Ta-oxide -- and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple -- analogic -- intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.

physics.app-ph↗

arXiv2019

Large memcapacitance and memristance at Nb:SrTiO$_{3}$ / La$_{0.5}$Sr$_{0.5}$Mn$_{0.5}$Co$_{0.5}$O$_{3-\delta}$ Topotactic Redox Interface

The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive systems. Memristors with additional functionalities such as robust memcapacitance can outperform standard devices in key aspects such as power consumption or miniaturization possibilities. In this work, we demonstrate a large memcapacitive response of a perovskite memristive interface, using the topotactic redox ability of La$_{0.5}$Sr$_{0.5}$Mn$_{0.5}$Co$_{0.5}$O$_{3-\delta}$ (LSMCO, 0 $\leq$ $\delta$ $\leq$ 0.62). We demonstrate that the multi-mem behaviour originates at the switchable n-p diode formed at the Nb:SrTiO3/LSMCO interface. We found for our Nb:SrTiO$_{3}$/LSMCO/Pt devices a memcapacitive effect C$_{HIGH}$/C$_{LOW}$ ~ 100 at 150 kHz. The proof-of-concept interface reported here opens a promising venue to use topotactic redox materials for disruptive nanoelectronics, with straightforward applications in neuromorphic computing technology.

physics.app-ph↗

arXiv2016

Origin of multistate resistive switching in Ti/manganite/Si$O_x$/Si heterostructures

We report on the growth and characterization of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/Si$O_x$/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in standard voltage controlled experiments. Based on thorough electrical characterization (impedance spectroscopy, current-voltage curves analysis), we disclose the contribution of three different microscopic regions of the device to the transport properties: an ohmic incomplete metallic filament, a thin manganite layer below the filament tip exhibiting Poole-Frenkel like conduction, and the SiOx layer with an electrical response well characterized by a Child-Langmuir law. Our results suggest that the existence of the SiOx layer plays a key role in the stabilization of the intermediate resistance level, indicating that the combination of two or more active RS oxides adds functionalities in relation to single-oxide devices. We understand that these multilevel devices are interesting and promising as their fabrication procedure is rather simple and they are fully compatible with standard Si-based electronics.

cond-mat.mtrl-sci↗

arXiv2016

Graphical analysis of Current-Voltage Characteristics in Typical Memristive Interfaces

A graphical representation based on the isothermal current-voltage (IV) measurements of typical memristive interfaces is presented. This is the starting point to extract relevant microscopic information of the parameters that control the electrical properties of a device based on a particular metal-oxide interface. The convenience of the method is illustrated presenting some examples were the IV characteristics were simulated in order to gain insight on the influence of the fitting parameters.

cond-mat.mtrl-sci↗

arXiv2016

Transport mechanism through metal-cobaltite interfaces

The resistive switching (RS) properties as a function of temperature were studied for Ag/La$_{1-x}$Sr$_x$CoO$_3$ (LSCO) interfaces. The LSCO is a fully-relaxed 100 nm film grown by metal organic deposition on a LaAlO$_3$ substrate. Both low and a high resistance states were set at room temperature and the temperature dependence of their current-voltage (IV) characteristics was mea- sured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties.

cond-mat.mtrl-sci↗

arXiv2015

Influence of substitutional disorder on the electrical transport and the superconducting properties of Fe$_{1+z}$Te$_{1-x-y}$Se$_{x}$S$_{y}$

We have carried out an investigation of the structural, magnetic, transport and superconducting properties of Fe$_{1+z}$Te$_{1-x-y}$Se$_x$S$_y$ ceramic compounds, for $z=0$ and some specific Se (0$\leq$ x $\leq$ 0.5) and S (0 $\leq$ y $\leq$0.12) contents. The incorporation of Se and S to the FeTe structure produces a progressive reduction of the crystallographic parameters as well as different degrees of structural disorder associated with the differences of the ionic radius of the substituting cations. In the present study, we measure transport properties of this family of compounds and we show the direct influence of disorder in the normal and superconductor states. We notice that the structural disorder correlates with a variable range hopping conducting regime observed at temperatures $T >$ 200 K. At lower temperatures, all the samples except the one with the highest degree of disorder show a crossover to a metallic-like regime, probably related to the transport of resilient-quasi-particles associated with the proximity of a Fermi liquid state at temperatures below the superconducting transition. Moreover, the superconducting properties are depressed only for that particular sample, in accordance to the condition that superconductivity is affected by disorder when the electronic localization length $\xi_L$ becomes smaller than the coherence length $\xi_{SC}$.

cond-mat.supr-con↗

arXiv2014

First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8

The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement.

cond-mat.str-el↗

arXiv2012

Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces

In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal / YBa2Cu3O7-d (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surface of a YBCO ceramic sample. By analyzing the IV characteristics of the contact interfaces and the temperature dependence of their resistance, we inferred that ion migration may generate or cancel conducting filaments, which modify the resistance near the interface, in accordance with the predictions of a recent model.

cond-mat.mtrl-sci↗

arXiv2012

Electrical transport properties of manganite powders under pressure

We have measured the electrical resistance of micrometric to nanometric powders of the La$_{5/8-y}$Pr$_y$Ca$_{3/8}$MnO$_3$ (LPCMO with y=0.3) manganite for hydrostatic pressures up to 4 kbar. By applying different final thermal treatments to samples synthesized by a microwave assisted denitration process, we obtained two particular grain characteristic dimensions (40 nm and 1000 nm) which allowed us to analyze the grain size sensitivity of the electrical conduction properties of both the metal electrode interface with manganite (Pt / LPCMO) as well as the intrinsic intergranular interfaces formed by the LPCMO powder, conglomerate under the only effect of external pressure. We also analyzed the effects of pressure on the phase diagram of these powders. Our results indicate that different magnetic phases coexist at low temperatures and that the electrical transport properties are related to the intrinsic interfaces, as we observe evidences of a granular behavior and an electronic transport dominated by the Space Charge limited Current mechanism.

cond-mat.mtrl-sci↗

arXiv2010

Mechanism for bipolar resistive switching in transition metal oxides

We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces, leading to a spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce non-trivial resistance hysteresis experiments that we also report, providing key validation to our model.

cond-mat.mtrl-sci↗

arXiv2009

A phenomenological model for the pressure sensitivity of the Curie temperature in hole-doped manganites

We performed high pressure experiments on La(0.8)Ca(0.2-x)Sr(x)MnO(3) (LCSMO) (0 ) and the Curie temperature Tc of hole-doped manganites at a fixed doping level and for doping values below the 0.3 (Mn+4/Mn+3) ratio. By considering our results and collecting others from the literature, we were able to propose a phenomenological law that considers the systematic dependence of Tc with structural and electronic parameters. This law predicts fairly well the pressure sensitivity of Tc, its dependence with the A-cation radius disorder and its evolution in the high pressure range. Considering a Double Exchange model, modified by polaronic effects, the phenomenological law obtained for Tc can be associated with the product of two terms: the polaronic modified bandwidth and an effective hole doping.

cond-mat.str-el↗

arXiv2008

Non-volatile resistive switching in dielectric superconductor YBCO

We report on the reversible, nonvolatile and polarity dependent resistive switching between superconductor and insulator states at the interfaces of a Au/YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO)/Au system. We show that the superconducting state of YBCO in regions near the electrodes can be reversibly removed and restored. The possible origin of the switching effect may be the migration of oxygen or metallic ions along the grain boundaries that control the intergrain superconducting coupling. Four-wire bulk resistance measurements reveal that the migration is not restricted to interfaces and produce significant bulk effects.

cond-mat.str-el↗

arXiv2007

Pressure effects in the triangular layered cobaltites NaxCoO2

We have measured transport properties as a function of temperature and pressure up to 30GPa in the NaxCoO2 system. For the x=0.5 sample the transition temperature at 53K increases with pressure, while paradoxically the sample passes from an insulating to a metallic ground state. A similar transition is observed in the x=0.31 sample under pressure. Compression on the x=0.75 sample transforms the sample from a metallic to an insulating state. We discuss our results in terms of interactions between band structure effects and Na+ order.

cond-mat.str-el↗