arXiv subjects

C. -T. Lin

Publications and source records attributed to C. -T. Lin.

2 recordsLinked to original sources

arXiv2020

Proposal and demonstration of germanium-on-silicon lock-in pixels for indirect time-of-flight based three-dimensional sensing

We propose the use of germanium-on-silicon technology for indirect time-of-flight based three-dimensional sensing, and demonstrate a novel lock-in pixel featuring high quantum efficiency and large frequency bandwidth. Compared to silicon pixels, germanium-on-silicon pixels simultaneously maintain a high quantum efficiency and a high demodulation contrast deep into GHz frequency regime, which enable consistently superior depth accuracy in both indoor and outdoor scenarios. Physical model, numerical simulation, device fabrication and characterization, system performance comparison, and laser safety analysis are presented. Our work paves a new path to high-performance time-of-flight rangers and imagers, as well as potential adoption of lasers operated at a longer near infrared wavelength that falls outside of the operation window of silicon pixels.

physics.ins-det↗

arXiv2013

Weak localization scattering lengths in epitaxial, and CVD graphene

Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyse the dependence of the scattering lengths L$_φ$, L$_i$, and L$_*$ on carrier density. We find no significant carrier dependence for L$_φ$, a weak decrease for L$_i$ with increasing carrier density just beyond a large standard error, and a n$^{-\frac{1}{4}}$ dependence for L$_*$. We demonstrate that currents as low as 0.01\,nA are required in smaller devices to avoid hot-electron artefacts in measurements of the quantum corrections to conductivity.

cond-mat.mes-hall↗