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Biswajit Ray

Publications and source records attributed to Biswajit Ray.

8 recordsLinked to original sources
arXiv2026

MCFlash: Bulk Bitwise Processing in 3D NAND with Dynamic Sensing and Multi-level Encoding

This paper presents MCFlash, a practical and immediately deployable technique for executing bulk bitwise operations directly within commercial off-the-shelf(COTS) 3D NAND flash chips. MCFlash relies solely on standard user-mode instructions, combining Multi-Level Cell (MLC) data encodings with dynamically tuned read reference voltages to execute in-place bitwise operations. We evaluate MCFlash across diverse NAND flash chips, both floating-gate and charge-trap variants, from different generations. Our results represent the first demonstration of error-free, on-chip bitwise operations, sustaining over one billion operations on fresh blocks and maintaining bit-error rates below 0.015% even after 10,000 program/erase (P/E) cycles.

cs.AR↗
arXiv2019

Towards the Avoidance of Counterfeit Memory: Identifying the DRAM Origin

Due to the globalization in the semiconductor supply chain, counterfeit dynamic random-access memory (DRAM) chips/modules have been spreading worldwide at an alarming rate. Deploying counterfeit DRAM modules into an electronic system can have severe consequences on security and reliability domains because of their sub-standard quality, poor performance, and shorter life span. Besides, studies suggest that a counterfeit DRAM can be more vulnerable to sophisticated attacks. However, detecting counterfeit DRAMs is very challenging because of their nature and ability to pass the initial testing. In this paper, we propose a technique to identify the DRAM origin (i.e., the origin of the manufacturer and the specification of individual DRAM) to detect and prevent counterfeit DRAM modules. A silicon evaluation shows that the proposed method reliably identifies off-the-shelf DRAM modules from three major manufacturers.

cs.CR↗
arXiv2018

State-of-the-Art Flash Chips for Dosimetry Applications

In this paper we show that state-of-the-art commercial off-the-shelf Flash memory chip technology (20 nm technology node with multi-level cells) is quite sensitive to ionizing radiation. We find that the fail-bit count in these Flash chips starts to increase monotonically with gamma or X-ray dose at 100 rad(SiO2). Significantly more fail bits are observed in X-ray irradiated devices, most likely due to dose enhancement effects due to high-Z back-end-of-line materials. These results show promise for dosimetry application.

physics.ins-det↗
arXiv2018

PreLatPUF: Exploiting DRAM Latency Variations for Generating Robust Device Signatures

Physically Unclonable Functions (PUFs) are potential security blocks to generate unique and more secure keys in low-cost cryptographic applications. Dynamic random-access memory (DRAM) has been proposed as one of the promising candidates for generating robust keys. Unfortunately, the existing techniques of generating device signatures from DRAM is very slow, destructive (destroy the current data), and disruptive to system operation. In this paper, we propose \textit{precharge} latency-based PUF (PreLatPUF) that exploits DRAM \textit{precharge} latency variations to generate signatures. The proposed PreLatPUF is fast, robust, least disruptive, and non-destructive. The silicon results from commercially available $DDR3$ chips from different manufacturers show that the proposed key generation technique is at least $ \sim 1,192X$ faster than the existing approaches, while reliably reproducing the key in extreme operating conditions.

cs.CR↗
arXiv2018

Exploiting DRAM Latency Variations for Generating True Random Numbers

True random number generator (TRNG) plays a vital role in a variety of security applications and protocols. The security and privacy of an asset rely on the encryption, which solely depends on the quality of random numbers. Memory chips are widely used for generating random numbers because of their prevalence in modern electronic systems. Unfortunately, existing Dynamic Random-access Memory (DRAM)-based TRNGs produce random numbers with either limited entropy or poor throughput. In this paper, we propose a DRAM-latency based TRNG that generates high-quality random numbers. The silicon results from Samsung and Micron DDR3 DRAM modules show that our proposed DRAM-latency based TRNG is robust (against different operating conditions and environmental variations) and acceptably fast.

cs.CR↗
arXiv2010

Unraveling the Role of Morphology on Organic Solar Cell Performance

Polymer based organic photovoltaic (OPV) technology offers a relatively inexpensive option for solar energy conversion provided its efficiency increases beyond the current level (6-7%) along with significant improvements in operational lifetime. The critical aspect of such solar cells is the complex morphology of distributed bulk heterojunctions, which plays the central role in the conversion of photo-generated excitons to electron-hole pairs. However, the fabrication conditions that can produce the optimal morphology are still unknown due to the lack of quantitative understanding of the effects of process variables on the cell morphology. In this article, we develop a unique process-device co-simulation framework based on phase-field model for phase separation coupled with self-consistent drift-diffusion transport to quantitatively explore the effects of the process conditions (e.g., annealing temperature, mixing ratio, anneal duration) on the organic solar cell performance. Our results explain experimentally observed trends of open circuit voltage and short circuit current that would otherwise be deemed anomalous from the perspective of conventional solar cells. In addition to providing an optimization framework for OPV technology, our morphology-aware modeling approach is ideally suited for a wide class of problems involving porous materials, block co-polymers, polymer colloids, OLED devices etc.

cond-mat.mtrl-sci↗
arXiv2004

Pump induced Autler-Townes effect and A-T mixing in a four level atoms

It is shown by theoretical simulation that tuning of the pump power can induce mixing and crossing of Autler-Townes(A-T)components of closely spaced transitions in atoms. Pump radiation also leads to small shifts of the central hole of A-T doublet. Off-resonance pumping gives an asymmetry in the A-T components and by controlling pump frequency detuning it is also possible to mix the A-T components.

physics.atom-ph↗