arXiv subjects

Beier Hu

Publications and source records attributed to Beier Hu.

3 recordsLinked to original sources

arXiv2026

Matching Terahertz and Hall Mobilities as a Hallmark of Intrinsic Charge Transport in Metal-Halide Perovskites

Charge-carrier transport in soft-lattice materials, including metal-halide perovskites, is often perceived to be highly heterogeneous across different length scales, and influenced by both the intrinsic (dynamic) thermal electronic disorder and extrinsic (static) disorder due to crystal defects, impurities, grain boundaries, and surface states. As a consequence, the reported carrier mobilities obtained by different electrical and optical measurement techniques frequently disagree, raising a critical question: can a truly intrinsic charge transport regime (that is, a regime not dominated by static disorder) extend across macroscopic single crystals of these materials? Here, we demonstrate such a regime in an exemplary metal-halide perovskite system, epitaxial CsPbBr$_{3}$ single crystals, where the local mobility obtained via optical pump-terahertz probe (OPTP) spectroscopy quantitatively agrees with the macroscopic transport mobility across a broad range of experimental conditions. Using a dedicated device platform that enables concurrent Hall-effect and OPTP measurements on the same single-crystalline sample, we obtain consistent room-temperature mobilities of ~ 30 cm$^{2}$V$^{-1}$s$^{-1}$, among the highest reliably reported for CsPbBr$_{3}$. Both techniques reveal band-like temperature dependence of the hole mobility with similar power exponents, confirming that the same intrinsic transport mechanism governs the ultrafast/local and steady-state/macroscopic responses. These results show that defect-free charge transport is achievable in soft-lattice perovskites on millimetre length scales and establish a robust methodology for benchmarking intrinsic mobility in emerging semiconductors.

cond-mat.mtrl-sci↗

arXiv2026

DINO-GFSA: Geo-Localization via Semantic Gated Fusion and Mamba-based Sequential Aggregation

Cross-view geo-localization (CVGL) is critical for Unmanned Aerial Vehicle (UAV) self-positioning and target localization in GNSS-denied environments. However, acquiring robust semantics while preserving finegrained spatial details remains challenging. To address this, we propose DINO-GFSA, a framework leveraging a LoRA (Low-Rank Adaptation) adapted DINOv3 (ViTL) backbone for parameter-efficient, high-capacity representation. Crucially, we introduce a Semantic Gated Residual Fusion module, which utilizes high-level semantics to selectively calibrate and integrate low-level spatial cues, effectively bridging the semantic gap. Furthermore, a Mamba-based Sequential Aggregation Head is designed to capture long-range spatial dependencies with linear complexity. Experiments demonstrate state-of-the-art performance on University-1652 and DenseUAV benchmarks, notably surpassing the previous best on DenseUAV by 3.48% on Recall@1. These results validate DINO-GFSA as a generalized, robust solution for UAV CVGL.

cs.CV↗

arXiv2026

Electrostatic Photoluminescence Tuning in All-Solid-State Perovskite Transistors

We demonstrate an all solid state semiconductor device, based on epitaxial single crystalline metal halide perovskites, enabling reversible control of a perovskite photoluminescence with a gate voltage. Fundamentally distinct from electroluminescent diodes, such a photoluminescence field effect transistor uses the gate electric field to electrostatically modulate the interfacial density of mobile charges, thereby affecting the radiative and nonradiative recombination channels of photocarriers. Varying the gate voltage in such transistors efficiently changes the rate of nonradiative interfacial recombination and modulates the photoluminescence intensity by 65 to 98 percent (depending on temperature). At favorable gating, nearly complete elimination of non-radiative losses can be achieved. This functionality, coupled with the strong visible-range absorption and emission, possible due to the high absorption coefficient, as well as controllable thickness and macroscopically homogeneous morphology of epitaxial perovskite films, leads to high external photoluminescence quantum efficiencies realized in large-area, thin-film devices. Such high-efficiency, scalable, electrostatically tunable optoelectronic switches broaden the potential applications of metal-halide perovskites in photonics and optoelectronics.

cond-mat.mtrl-sci↗