arXiv subjects

Baokang Peng

Publications and source records attributed to Baokang Peng.

3 recordsLinked to original sources

arXiv2026

First Demonstration of Flip DRAM from Process, Architecture to System to Push DRAM Scaling beyond 4F2: 2F2 Self-aligned Flip Vertical Channel Transistor (FVCT) DRAM and Flip WL (FWL) 3D-DRAM

For the first time, we proposed a novel stacking technology for DRAM scaling by flipping and backside processes, making full use of DRAM wafer's backside and investigating it on both 4F2 and 3D-DRAM. For 4F2 VCT, 2F2 Flip VCT featuring self-aligned back-to-back stacked 1T1C bitcell, with various BL and WL configurations, were studied and key process modules such as self-aligned stacked vertical channel, BL and WL formations, wafer bonding and flipping, substrate thinning and low-R Co storage node (SN) were successfully developed, addressing the potential thermal, misalign and parasitic concerns in the Flip VCT process. A full DRAM DTCO framework was also established from device to mat and chip level. Compared to 4F2 VCT DRAM with the same mat size, 2F2 FVCT delivers 27.5% less parasitics, 11% better sense margin, 16.3% higher charge sharing (CS) speed and 50% less area. For 3D-DRAM, a brand-new flip WL staircase design with peripheral circuit innovations was studied and proved to have 25% density gain, 15.1% faster turn-on speed and 6.8% less CS time, proving further extendibility of flip technology on DRAM.

cond-mat.mes-hall↗

arXiv2026

CellE: Automated Standard Cell Library Extension via Equality Saturation

Automated standard cell library extension is crucial for maximizing Quality of Results (QoR) in modern VLSI design. We introduce CellE, a novel framework that leverages formal methods to achieve exhaustive discovery of functionally equivalent subcircuits. CellE applies equality saturation to the post-mapping netlist, generating an e-graph to cluster all functionally equivalent implementations. This canonical representation enables an efficient pattern mining algorithm to select the most area-optimal standard cells. Experimental results show a 15.41% average area reduction (up to 23.64% over prior work). Furthermore, characterization in a commercial flow demonstrates an 8.00% average delay reduction, confirming CellE's superior QoR optimization capabilities.

cs.AR↗

arXiv2025

Orthrus: Dual-Loop Automated Framework for System-Technology Co-Optimization

With the diminishing return from Moore's Law, system-technology co-optimization (STCO) has emerged as a promising approach to sustain the scaling trends in the VLSI industry. By bridging the gap between system requirements and technology innovations, STCO enables customized optimizations for application-driven system architectures. However, existing research lacks sufficient discussion on efficient STCO methodologies, particularly in addressing the information gap across design hierarchies and navigating the expansive cross-layer design space. To address these challenges, this paper presents Orthrus, a dual-loop automated framework that synergizes system-level and technology-level optimizations. At the system level, Orthrus employs a novel mechanism to prioritize the optimization of critical standard cells using system-level statistics. It also guides technology-level optimization via the normal directions of the Pareto frontier efficiently explored by Bayesian optimization. At the technology level, Orthrus leverages system-aware insights to optimize standard cell libraries. It employs a neural network-assisted enhanced differential evolution algorithm to efficiently optimize technology parameters. Experimental results on 7nm technology demonstrate that Orthrus achieves 12.5% delay reduction at iso-power and 61.4% power savings at iso-delay over the baseline approaches, establishing new Pareto frontiers in STCO.

cs.AR↗