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B. Van Duppen

Publications and source records attributed to B. Van Duppen.

25 records · Page 2Linked to original sources

Spin- and valley-dependent transport through arrays of ferromagnetic silicene junctions

We study ballistic transport of Dirac fermions in silicene through arrays of barriers, of width $d$, in the presence of an exchange field $M$ and a tunable potential of height $U$ or depth $-U$. The spin- and valley-resolved conductances as functions of $U$ or $M$, exhibit resonances away from the Dirac point (DP) and close to it a pronounced dip that becomes a gap when a critical electric field $E_z$ is applied. This gap widens by increasing the number of barriers and can be used to realize electric field-controlled switching of the current. The spin $p_s$ and valley $p_v$ polarizations of the current near the DP increase with $E_z$ or $M$ and can reach 100\% for certain of their values. These field ranges widen significantly by increasing the number of barriers. Also, $p_s$ and $p_v$ oscillate nearly periodically with the separation between barriers or wells and can be inverted by reversing $M$.

cond-mat.mes-hall↗

Spin and valley polarization of plasmons in silicene due to external fields

The electronic properties of the novel two dimensional (2D) material silicene are strongly influenced by the application of a perpendicular electric field $E_z$ and of an exchange field $M$ due to adatoms positioned on the surface or a ferromagnetic substrate. Within the random phase approximation, we investigate how electron-electron interactions are affected by these fields and present analytical and numerical results for the dispersion of plasmons, their lifetime, and their oscillator strength. We find that the combination of the fields $E_z$ and $M$ brings a spin and valley texture to the particle-hole excitation spectrum and allows the formation of spin- and valley-polarized plasmons. When the Fermi level lies in the gap of one spin in one valley, the intraband region of the corresponding spectrum disappears. For zero $E_z$ and finite $M$ the spin symmetry is broken and spin polarization is possible. The lifetime and oscillator strength of the plasmons are shown to depend strongly on the number of spin and valley type electrons that form the electron-hole pairs.

cond-mat.mes-hall↗

Plasmons and their interaction with electrons in trilayer graphene

The interaction between electrons and plasmons in trilayer graphene is investigated within the Overhauser approach resulting in the 'plasmaron' quasi-particle. This interaction is cast into a field theoretical problem, nd its effect on the energy spectrum is calculated using improved Wigner-Brillouin perturbation theory. The plasmaron spectrum is shifted with respect to the bare electron spectrum by $ΔE(\mathbf{k})\sim 50\div200\,{\rm meV}$ for ABC stacked trilayer graphene and for ABA trilayer graphene by $ΔE(\mathbf{k})\sim 30\div150\,{\rm meV}$ ($ΔE(\mathbf{k})\sim 1\div5\,{\rm meV}$) for the hyperbolic linear) part of the spectrum. The shift in general increases with the electron concentration $n_{e}$ and electron momentum. The dispersion of plasmarons is more pronounced in \textit{ABC} stacked than in ABA tacked trilayer graphene, because of the different energy band structure and their different plasmon dispersion.

cond-mat.mes-hall↗

Thermodynamic properties of the electron gas in multilayer graphene in the presence of a perpendicular magnetic field

The thermodynamic properties of the electron gas in multilayer graphene depend strongly on the number of layers and the type of stacking. Here we analyse how those properties change when we vary the number of layers for rhombohedral stacked multilayer graphene and compare our results with those from a conventional two dimensional electron gas. We show that the highly degenerate zero energy Landau level which is partly filled with electrons and partly with holes has a strong influence on the value of the different thermodynamic quantities.

cond-mat.mes-hall↗

Klein paradox for a pn junction in multilayer graphene

Charge carriers in single and multilayered graphene systems behave as chiral particles due to the particular lattice symmetry of the crystal. We show that the interplay between the meta-material properties of graphene multilayers and the pseudospinorial properties of the charge carriers result in the occurrence of Klein and anti-Klein tunneling for rhombohedral stacked multilayers. We derive an algebraic formula predicting the angles at which these phenomena occur and support this with numerical calculations for systems up to four layers. We present a decomposition of an arbitrarily stacked multilayer into pseudospin doublets that have the same properties as rhombohedral systems with a lower number of layers.

cond-mat.mes-hall↗

Four band tunneling in bilayer graphene

The conductance, the transmission and the reflection probabilities through rectangular potential barriers and pn-junctions are obtained for bilayer graphene taking into account the four bands of the energy spectrum. We have evaluated the importance of the skew hopping parameters γ3 and γ4 to these properties and show that for energies E>γ1/100 their effect is negligible. For high energies two modes of propagation exist and we investigate scattering between these modes. For perpendicular incidence both propagation modes are decoupled and scattering between them is forbidden. This extends the concept of pseudospin as defined within the two band approximation to a four band model and corresponds to the (anti)symmetry of the wavefunctions under in-plane mirroring. New transmission resonances are found that appear as sharp peaks in the conductance which are absent in the two band approximation. The application of an interlayer bias to the system: 1) breaks the pseudospin structure, 2) opens a bandgap that results in a distinct feature of suppressed transmission in the conductance, and 3) breaks the angular symmetry with respect to normal incidence in the transmission and reflection.

cond-mat.mes-hall↗

Multiband tunneling in trilayer graphene

The electronic tunneling properties of the two stable forms of trilayer graphene (TLG), rhombohedral ABC and Bernal ABA, are examined for pn and pnp junctions as realized by using a single gate (SG) or a double gate (DG). For the rhombohedral form, due to the chirality of the electrons, the Klein paradox is found at normal incidence for SG devices while at high energy interband scattering between additional propagation modes can occur. The electrons in Bernal ABA TLG can have a monolayer- or bilayer-like character when incident on a SG device. Using a DG however both propagation modes will couple by breaking the mirror symmetry of the system which induces intermode scattering and resonances that depend on the width of the DG pnp junction. For ABC TLG the DG opens up a band gap which suppresses Klein tunneling. The DG induces also an unexpected asymmetry in the tunneling angle for single valley electrons.

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