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B. Partoens

Publications and source records attributed to B. Partoens.

At least 19 recordsLinked to original sources

Unveiling the electronic structure of pseudo-tetragonal WO$_3$ thin films

WO$_3$ is a binary 5d compound which has attracted remarkable attention due to the vast array of structural transitions that it undergoes in its bulk form. In the bulk, a wide range of electronic properties has been demonstrated, including metal-insulator transitions and superconductivity upon doping. In this context, the synthesis of WO$_3$ thin films holds considerable promise for stabilizing targeted electronic phase diagrams and embedding them in technological applications. However, to date, the electronic structure of WO$_3$ thin films is experimentally unexplored, and only characterized by numerical calculations. Underpinning such properties experimentally would be important to understand not only the collective behavior of electrons in this transition metal oxide, but also to explain and engineer both the observed optical responses to carriers' concentration and its prized catalytic activity. Here, by means of tensile strain, we stabilize WO$_3$ thin films into a stable phase, which we call pseudo-tetragonal, and we unveil its electronic structure by combining photoelectron spectroscopy and density functional theory calculations. This study constitutes the experimental demonstration of the electronic structure of WO$_3$ thin-films and allows us to pin down the first experimental benchmarks of the fermiology of this system.

cond-mat.mtrl-sci

First-principles study of lattice dynamical properties of the room-temperature $P2_1/n$ and ground-state $P2_1/c$ phases of WO$_3$

Using first-principles density functional theory, we investigate the dynamical properties of the room-temperature $P2_1/n$ and ground-state $P2_1/c$ phases of WO$_3$. As a preliminary step, we assess the validity of various standard and hybrid functionals, concluding that the best description is achieved with the B1-WC hybrid functional while a reliable description can also be provided using the standard LDA functional. We also carefully rediscuss the structure and energetics of all experimentally observed and a few hypothetical metastable phases in order to provide deeper insight into the unusual phase diagram of WO$_3$. Then, we provide a comprehensive theoretical study of the lattice dynamical properties of the $P2_1/n$ and $P2_1/c$ phases, reporting zone-center phonons, infrared and Raman spectra as well as the full phonon dispersion curves, which attest for the dynamical stability of both phases. We carefully discuss the spectra, explaining the physical origin of their main features and evolution from one phase to another. We reveal a systematic connection between the dynamical and structural properties of WO$_3$, highlighting that the number of peaks in the high-frequency range of the Raman spectrum appears as a fingerprint of the number of antipolar distortions that are present in the structure and a practical way to discriminate between the different phases.

cond-mat.mtrl-sci

First-principles study of defects at $\Sigma3$ grain boundaries in CuGaSe$_2$

We present a first-principles computational study of cation-Se $\Sigma$3 (112) grain boundaries in CuGaSe$_2$. We discuss the structure of these grain boundaries, as well as the effect of native defects and Na impurities on their electronic properties. The formation energies show that the defects will tend to form preferentially at the grain boundaries, rather than in the grain interiors. We find that in Ga-rich growth conditions Cu vacancies as well as Ga at Cu and Cu at Ga antisites are mainly responsible for having the equilibrium Fermi level pinned toward the middle of the gap, resulting in carrier depletion. The Na at Cu impurity in its +1 charge state contributes to this. In Ga-poor growth conditions, on the other hand, the formation energies of Cu vacancies and Ga at Cu antisites are comparatively too high for any significant influence on carrier density or on the equilibrium Fermi level position. Thus, under these conditions, the Cu at Ga antisites give rise to a $p$-type grain boundary. Also, their formation energy is lower than the formation energy of Na at Cu impurities. Thus, the latter will fail to act as a hole barrier preventing recombination at the grain boundary, in contrast to what occurs in CuInSe$_2$ grain boundaries. We also discuss the effect of the defects on the electronic properties of bulk CuGaSe$_2$, which we assume reflect the properties of the grain interiors.

cond-mat.mtrl-sci

Enhanced superconductivity in few-layer TaS$_2$ due to healing by oxygenation

When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional materials. Superconductivity is generally thought to be vulnerable to these effects, but here we demonstrate the contrary in the case of oxygenation of ultrathin tantalum disulfide (TaS$_2$). Our first-principles calculations show that incorporation of oxygen into the TaS$_2$ crystal lattice is energetically favourable and effectively heals sulfur vacancies typically present in these crystals, thus restoring the carrier density to the intrinsic value of TaS$_2$. Strikingly, this leads to a strong enhancement of the electron-phonon coupling, by up to 80% in the highly-oxygenated limit. Using transport measurements on fresh and aged (oxygenated) few-layer TaS$_2$, we found a marked increase of the superconducting critical temperature ($T_{\mathrm{c}}$) upon aging, in agreement with our theory, while concurrent electron microscopy and electron-energy loss spectroscopy confirmed the presence of sulfur vacancies in freshly prepared TaS$_2$ and incorporation of oxygen into the crystal lattice with time. Our work thus reveals the mechanism by which certain atomic-scale defects can be beneficial to superconductivity and opens a new route to engineer $T_{\mathrm{c}}$ in ultrathin materials.

cond-mat.supr-con

Three-dimensional electron-hole superfluidity in a superlattice close to room temperature

Although there is strong theoretical and experimental evidence for electron-hole superfluidity in separated sheets of electrons and holes at low $T$, extending superfluidity to high $T$ is limited by strong 2D fluctuations and Kosterlitz-Thouless effects. We show this limitation can be overcome using a superlattice of alternating electron- and hole-doped semiconductor monolayers. The superfluid transition in a 3D superlattice is not topological, and for strong electron-hole pair coupling, the transition temperature $T_c$ can be at room temperature. As a quantitative illustration, we show $T_c$ can reach $270$ K for a superfluid in a realistic superlattice of transition metal dichalcogenide monolayers.

cond-mat.supr-con

Electric-field modulation of linear dichroism and Faraday rotation in few-layer phosphorene

Electro-optical modulators, which use an electric voltage (or an electric field) to modulate a beam of light, are essential elements in present-day telecommunication devices. Using a self-consistent tight-binding approach combined with the standard Kubo formula, we show that the optical conductivity and the linear dichroism of few-layer phosphorene can be modulated by a perpendicular electric field. We find that the field-induced charge screening plays a significant role in modulating the optical conductivity and the linear dichroism. Distinct absorption peaks are induced in the conductivity spectrum due to the strong quantum confinement along the out-of-plane direction and to the field-induced forbidden-to-allowed transitions. The field modulation of the linear dichroism becomes more pronounced with increasing number of phosphorene layers. We also show that the Faraday rotation is present in few-layer phosphorene even in the absence of an external magnetic field. This optical Hall effect is induced by the reduced lattice symmetry of few-layer phosphorene. The Faraday rotation is greatly influenced by the field-induced charge screening and is strongly dependent on the strength of perpendicular electric field and on the number of phosphorene layers.

cond-mat.mes-hall

First-principles study of CO and OH adsorption on In-doped ZnO surfaces

We present a first-principles computational study of non-polar ZnO (10$\bar{1}$0) surfaces doped with indium. The calculations were performed using a model ZnO slab. The position of the In dopants was varied from deep bulk-like layers to the surface layers. It was established that the preferential location of the In atoms is at the surface by examining the dependence of the defect formation energy as well as the surface energy on In location. The adsorption sites on the surface of ZnO and the energy of adsorption of CO molecules and OH-species were determined in connection to In doping. It was found that OH has higher bonding energy to the surface than CO. The presence of In atoms at the surface of ZnO is favorable for CO adsorption, resulting in an elongation of the C-O bond and in charge transfer to the surface. The effect of CO and OH adsorption on the electronic and conduction properties of surfaces was assessed. We conclude that In-doped ZnO surfaces should present a higher electronic response upon adsorption of CO.

cond-mat.mtrl-sci

Tuning the electronic properties of gated multilayer phosphorene: A self-consistent tight-binding study

By taking account of the electric-field-induced charge screening, a self-consistent calculation within the framework of the tight-binding approach is employed to obtain the electronic band structure of gated multilayer phosphorene and the charge densities on the different phosphorene layers. We find charge density and screening anomalies in single-gated multilayer phosphorene and electron-hole bilayers in dual-gated multilayer phosphorene. Due to the unique puckered lattice structure, both intralayer and interlayer charge screenings are important in gated multilayer phosphorene. We find that the electric-field tuning of the band structure of multilayer phosphorene is distinctively different in the presence and absence of charge screening. For instance, it is shown that the unscreened band gap of multilayer phosphorene decreases dramatically with increasing electric-field strength. However, in the presence of charge screening, the magnitude of this band-gap decrease is significantly reduced and the reduction depends strongly on the number of phosphorene layers. Our theoretical results of the band-gap tuning are in good agreement with recent experiments.

cond-mat.mes-hall

Evolution of multi-gap superconductivity in the atomically thin limit: Strain-enhanced three-gap superconductivity in monolayer MgB$_2$

Starting from first principles, we show the formation and evolution of superconducting gaps in MgB$_2$ at its ultrathin limit. Atomically thin MgB$_2$ is distinctly different from bulk MgB$_2$ in that surface states become comparable in electronic density to the bulk-like $\sigma$- and $\pi$-bands. Combining the ab initio electron-phonon coupling with the anisotropic Eliashberg equations, we show that monolayer MgB$_2$ develops three distinct superconducting gaps, on completely separate parts of the Fermi surface due to the emergent surface contribution. These gaps hybridize nontrivially with every extra monolayer added to the film, owing to the opening of additional coupling channels. Furthermore, we reveal that the three-gap superconductivity in monolayer MgB$_2$ is robust over the entire temperature range that stretches up to a considerably high critical temperature of 20 K. The latter can be boosted to $>$50 K under biaxial tensile strain of $\sim$ 4\%, which is an enhancement stronger than in any other graphene-related superconductor known to date.

cond-mat.supr-con

Wigner crystallization in transition metal dichalcogenides: A new approach to correlation energy

We introduce a new approach for the correlation energy of one- and two-valley two-dimensional electron gas (2DEG) systems. Our approach is based on a random phase approximation at high densities and a classical approach at low densities, with interpolation between the two limits. This approach gives excellent agreement with available Quantum Monte Carlo (QMC) calculations. We employ the two-valley 2DEG model to describe the electron correlations in monolayer transition metal dichalcogenides (TMDs). The zero-temperature transition from a Fermi liquid to a quantum Wigner crystal phase in monolayer TMDs is obtained using density-functional theory within the local-density approximation. Consistent with QMC, we find that electrons crystallize at $r_s=30.5$ in one-valley 2DEG. For two-valleys, we predict Wigner crystallization at $r_s= 29.5$, indicating that valley degeneracy has little effect on the critical $r_s$, in contrast to an earlier claim.

cond-mat.str-el

Direct observation of electron emission as a result of a VVV Auger transition in the valence band of Graphene

We report the first direct observation of electron emission into the vacuum as a result of a VVV Auger transition resulting from the relaxation of a deep hole in the valence band. A beam of low energy (<1.25eV) positrons was used to deposit positrons onto the surface of samples consisting of single layer graphene, multi-layer graphene and graphite. The distribution of electrons emitted from the samples as a result of the annihilation of the positron showed peak extending up to ~12 eV with a maximum at ~4eV. The observed peak was ~17 times larger than the previously observed annihilation induced C KVV peak. An analysis based upon a density functional theory calculation of the positron annihilation rates indicates that the width and intensity of the peak is consistent with electron emission resulting from VVV Auger transition excited by the annihilation of valence band electrons. Good agreement was found between the data from the single layer graphene on Cu surface with a theoretical line shape found from a self-folding of the density of states for a free standing graphene layer. The agreement between the theoretical and measured intensities for the KVV and VVV transitions indicates that the branching ratio for holes to decay via an Auger transition is nearly the same in both cases (i.e. close to 100%). Our results suggest the possibility of using annihilation induced VVV Auger spectroscopy to study the properties of the local density of states and the hole decay processes in materials in which the valence band width exceeds the work function.

cond-mat.mes-hall

Piezoelectricity in asymmetrically strained bilayer graphene

We study the electronic properties of commensurate faulted bilayer graphene by diagonalizing the one-particle Hamiltonian of the bilayer system in a complete basis of Bloch states of the individual graphene layers. Our novel approach is very general and can be easily extended to any commensurate graphene-based heterostructure. Here, we consider three cases: i) twisted bilayer graphene, ii) bilayer graphene where triaxial stress is applied to one layer, and iii) bilayer graphene where uniaxial stress is applied to one layer. We show that the resulting superstructures can be divided into distinct classes, depending on the twist angle or the magnitude of the induced strain. The different classes are distinguished from each other by the interlayer coupling mechanism, resulting in fundamentally different low-energy physics. For the cases of triaxial and uniaxial stress, the individual graphene layers tend to decouple and we find significant charge transfer between the layers. In addition, this piezoelectric effect can be tuned by applying a perpendicular electric field. Finally, we show how our approach can be generalized to multilayer systems.

cond-mat.mes-hall

Extension of the basis set of linearized augmented plane wave method (LAPW) by using supplemented tight binding basis functions

In order to increase the accuracy of the linearized augmented plane wave method (LAPW) we present a new approach where the plane wave basis function is augmented by two different atomic radial components constructed at two different linearization energies corresponding to two different electron bands (or energy windows). We demonstrate that this case can be reduced to the standard treatment within the LAPW paradigm where the usual basis set is enriched by the basis functions of the tight binding type, which go to zero with zero derivative at the sphere boundary. We show that the task is closely related with the problem of extended core states which is currently solved by applying the LAPW method with local orbitals (LAPW+LO). In comparison with LAPW+LO, the number of supplemented basis functions in our approach is doubled, which opens up a new channel for the extension of the LAPW and LAPW+LO basis sets. The appearance of new supplemented basis functions absent in the LAPW+LO treatment is closely related with the existence of the $\dot{u}_l-$component in the canonical LAPW method. We discuss properties of additional tight binding basis functions and apply the extended basis set for computation of electron energy bands of lanthanum (face and body centered structures) and hexagonal close packed lattice of cadmium. We demonstrate that the new treatment gives lower total energies in comparison with both canonical LAPW and LAPW+LO, with the energy difference more pronounced for intermediate and poor LAPW basis sets.

cond-mat.mtrl-sci

Echo states for detailed fluctuation theorems

Detailed fluctuation theorems are statements about the probability distribution for the stochastic entropy production along a trajectory. It involves the consideration of a suitably transformed dynamics, such as the time reversed, the adjoint, or a combination of these. We identify specific, typically unique, initial conditions, called echo states, for which the final probability distribution of the transformed dynamics reproduces the initial distribution. In this case the detailed fluctuation theorems relate the stochastic entropy production of the direct process to that of the transformed one. We illustrate our results by an explicit analytical calculation and numerical simulations for a modulated two-state quantum dot.

cond-mat.stat-mech

Adsorption and desorption in confined geometries: a discrete hopping model

We study the adsorption and desorption kinetics of interacting particles moving on a one-dimensional lattice. Confinement is introduced by limiting the number of particles on a lattice site. Adsorption and desorption are found to proceed at different rates, and are strongly influenced by the concentration-dependent transport diffusion. Analytical solutions for the transport and self-diffusion are given for systems of length 1 and 2 and for a zero-range process. In the last situation the self- and transport diffusion can be calculated analytically for any length.

cond-mat.stat-mech

Diffusion of interacting particles in discrete geometries: equilibrium and dynamical properties

We expand on a recent study of a lattice model of interacting particles [Phys. Rev. Lett. 111, 110601 (2013)]. The adsorption isotherm and equilibrium fluctuations in particle number are discussed as a function of the interaction. Their behavior is similar to that of interacting particles in porous materials. Different expressions for the particle jump rates are derived from transition state theory. Which expression should be used depends on the strength of the inter-particle interactions. Analytical expressions for the self- and transport diffusion are derived when correlations, caused by memory effects in the environment, are neglected. The diffusive behavior is studied numerically with kinetic Monte Carlo (kMC) simulations, which reproduces the diffusion including correlations. The effect of correlations is studied by comparing the analytical expressions with the kMC simulations. It is found that the Maxwell-Stefan diffusion can exceed the self-diffusion. To our knowledge, this is the first time this is observed. The diffusive behavior in one-dimensional and higher dimensional systems is qualitatively the same, with the effect of correlations decreasing for increasing dimension. The length dependence of both the self- and transport diffusion is studied for one-dimensional systems. For long lengths the self-diffusion shows a one over length dependence. Finally, we discuss when agreement with experiments and simulations can be expected. The assumption that particles in different cavities do not interact is expected to hold quantitatively at low and medium particle concentrations, if the particles are not strongly interacting.

cond-mat.stat-mech

Electron-electron interactions in bilayer graphene quantum dots

A parabolic quantum dot (QD) as realized by biasing nanostructured gates on bilayer graphene is investigated in the presence of electron-electron interaction. The energy spectrum and the phase diagram reveal unexpected transitions as function of a magnetic field. For example, in contrast to semiconductor QDs, we find a novel valley transition rather than only the usual singlet-triplet transition in the ground state of the interacting system. The origin of these new features can be traced to the valley degree of freedom in bilayer graphene. These transitions have important consequences for cyclotron resonance experiments.

cond-mat.mes-hall

Diffusion of interacting particles in discrete geometries

We evaluate the self-diffusion and transport diffusion of interacting particles in a discrete geometry consisting of a linear chain of cavities, with interactions within a cavity described by a free-energy function. Exact analytical expressions are obtained in the absence of correlations, showing that the self-diffusion can exceed the transport diffusion if the free-energy function is concave. The effect of correlations is elucidated by comparison with numerical results. Quantitative agreement is obtained with recent experimental data for diffusion in a nanoporous zeolitic imidazolate framework material, ZIF-8.

cond-mat.stat-mech