arXiv subjects

B. Davier

Publications and source records attributed to B. Davier.

3 recordsLinked to original sources

arXiv2021

Study of phonon transport across several Si/Ge interfaces using full-band phonon Monte Carlo simulation

A Full Band Monte Carlo simulator has been developed to consider phonon transmission across interfaces that are perpendicular to the heat flux. This solver of the Boltzmann transport equation which does not require any assumption on the shape the phonon distribution can naturally consider all phonon transport regimes from the diffusive to the fully ballistic regime. Hence, this simulator is used to study single and double Si/Ge heterostructures from the micrometer scale down to the nanometer scale i.e. in all phonon transport regime from ballistic to fully diffusive. A methodology to estimate the thermal conductivities and the thermal interfaces is presented.

physics.app-ph↗

arXiv2020

Revisiting thermal conductivity and interface conductance at the nanoscale

A semi-analytical model for studying thermal transport at the nanoscale, able to accurately describe both the effect of out of equilibrium transport and the thermal transfer at interfaces, is presented. Our approach is based on the definition of pseudo local temperatures distinguishing the phonon populations according to the direction of their velocity. This formalism leads to a complete set of equations capturing the heat transfer in nanostructures even in the case of hetero-structures. This model only requires introducing a new intrinsic thermal parameter called ballistic thermal conductance and a geometric one called the effective thermal conductivity. Finally, this model is able to reproduce accurately advanced numerical results of Monte Carlo simulation for phonons in all phonon transport regime: diffusive (as the Fourier heat transport regime is included), ballistic, and intermediate ones even if thermal interface are involved. This formalism should provide new insights in the interpretation of experimental measurements.

cond-mat.mes-hall↗

arXiv2018

Heat transfer in rough nanofilms and nanowires using Full Band Ab Initio Monte Carlo simulation

The Boltzmann transport equation is one of the most relevant framework to study the heat transport at the nanoscale, beyond the diffusive regime and up to the micrometer-scale. In the general case of three-dimensional devices, the particle Monte Carlo approach of phonon transport is particularly powerful and convenient, and requires reasonable computational resources. In this work, we propose an original and versatile particle Monte Carlo approach parametrized by using ab-initio data. Both the phonon dispersion and the phonon-phonon scattering rates have been computed by DFT calculation in the entire 3D Brillouin zone. To treat the phonon transport at rough interfaces, a combination of specular and diffuse reflections has been implemented in phase space. Thermal transport has been investigated in nanowires and thin films made of cubic and hexagonal Silicon, including edge roughness, in terms of effective thermal conductivity, phonon band contributions and heat flux orientation. It is shown that the effective thermal conductivity in quasi-ballistic regime obtained from our Monte Carlo simulation cannot be accurately fitted by simple semi-analytical Matthiessen-like models and that spectral approaches are mandatory to get good results. Our Full Band approach shows that some phonon branches exhibiting a negative group velocity in some parts of the Brillouin zone may contribute negatively to the total thermal flux. Besides, the thermal flux clearly appears to be oriented along directions of high density of states. The resulting anisotropy of the heat flux is discussed together with the influence of rough interfaces.

cond-mat.mes-hall↗