arXiv subjects

Aveek Bid

Publications and source records attributed to Aveek Bid.

At least 19 recordsLinked to original sources

arXiv2026

Even-denominator fractional quantum Hall states in the zeroth Landau level of ABA trilayer graphene

Even-denominator fractional quantum Hall states (FQHSs) at half filling are of particular interest because they can host non-Abelian quasiparticles. Here we report the emergence of such states in the zeroth Landau level ($N=0$) of ABA trilayer graphene (TLG), challenging the conventional expectation that they are confined to the first excited Landau level. We observe robust incompressible states at $ν=7/2$, $9/2$, and $5/2$ with their associated Levin--Halperin daughter states: $ν=59/17$ and $46/13$ near $7/2$; $ν=58/13$ and $77/17$ near $9/2$; and $ν=43/17$ near $5/2$. These states appear exclusively within a finite displacement-field window coincident with crossings between symmetry-broken $N=0$ Landau levels carrying distinct isospin indices. The quantitative correspondence between the calculated crossing loci and the experimentally determined stability regions identifies Landau-level mixing as the microscopic origin. We attribute the stabilization of these even-denominator states to inversion-symmetry breaking in TLG, which enhances valley-resolved Landau-level hybridization and renormalizes short-range Coulomb interactions. Our results expand the landscape of even-denominator FQHSs to multilayer graphene and establish TLG as a tunable platform for realizing non-Abelian anyons.

cond-mat.mes-hall↗

arXiv2026

Screening-controlled dynamical criticality in the quantum Hall regime

At continuous electronic phase transitions, Coulomb interactions can modify the relation between length, energy, and temperature, but experimentally disentangling their effects on spatial versus dynamical criticality has remained difficult, since finite-temperature scaling alone measures only the combined exponent $κ= 1/(zγ)$. Here, we introduce two advances that resolve this limitation. First, by combining temperature scaling with independent current scaling, we separately extract the dynamical exponent $z$ and the localization-length exponent $γ$ at the quantum Hall plateau transition -- rather than inferring one from an assumed value of the other. Second, using dual-graphite-gated graphene devices in which the effective Coulomb interaction range is tuned geometrically by the ratio of the magnetic length $l_B$ to the graphite-gate distance $d$, we track this separation across both screened and unscreened interaction regimes within the same device platform. Temperature scaling gives $κ\simeq 0.21$ in the screened regime and $κ\simeq 0.41$ in the unscreened regime; combining this with current scaling reveals that screening changes $z$ from $\simeq 1$ in the unscreened regime to $\simeq 2$ in the screened regime. In contrast, $γ$ remains close to $2.4$ throughout. Our results establish that gate-controlled screening selectively modifies the interaction-dependent dynamical sector of the quantum Hall transition, leaving the localization-length exponent $γ$ unchanged within experimental uncertainty. More broadly, this work establishes geometric screening as a versatile tool for controlling interactions and disentangling interaction and disorder effects in correlated two-dimensional systems, including fractional quantum Hall states, moiré materials, and other strongly localized electronic phases.

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arXiv2026

Diagnosing the origin of quantum oscillation beating in graphene

Magnetic quantum oscillations are usually periodic in inverse magnetic field, and their amplitude can show beating when two nearby frequencies interfere. In graphene-based hexagonal systems, such beating can arise from strain-induced pseudomagnetic fields, unequal valley populations, valley-dependent energy shifts, spin-orbit coupling-induced band splitting, or Kekulé distortions. Here, we show that the carrier density and magnetic field dependence of the beating nodes can distinguish these mechanisms. Starting from Onsager's quantization relation, we derive scaling relations for the critical carrier density $N_c$ for the beating nodes as a function of critical magnetic field $B_c$. A pseudomagnetic field gives $N_c\propto B_c^2$, whereas a density-independent valley imbalance gives $N_c\propto B_c$. A constant Dirac-band energy splitting by Zeeman-like spin-orbit coupling also gives quadratic field scaling, but with a different node sequence: $N_{c,j}\propto(2j+1)B_{c,j}^2$ for a pseudomagnetic field and $N_{c,j}\propto(2j+1)^2B_{c,j}^2$ for energy splitting, where $j$ labels the beating node indices. These results provide quantitative constraints on different microscopic origins of valley- and spin-dependent band splittings in graphene-based systems.

cond-mat.mes-hall↗

arXiv2026

Layer-Polarization-Driven Metal-Insulator Transition in multi-band Graphene Moire' Superlattices

Graphene/hBN moiré superlattices provide a highly tunable platform for exploring emergent quantum phases in low-dimensional systems. Here, we investigate the moiré superlattice formed between hBN and ABA-stacked trilayer graphene (TLG), an inherently multi-band system. We demonstrate that the moiré potential is not merely a perturbation but a tool to hybridize the distinct massless and massive electronic sectors of TLG. By applying a perpendicular displacement field to tune layer polarization, we drive a fundamental reconstruction of the electronic band structure. Specifically, increasing the displacement field evolves the system from a multi-band regime to an effectively single-band regime at low energies, accompanied by a metal--insulator transition at the hole-doped secondary Dirac point. This transition originates from a redistribution of carriers across graphene layers that selectively enhances their coupling to the extrinsic moiré potential. Quantum capacitance measurements provide direct evidence for the suppression of the density of states at the hole-side secondary Dirac point, consistent with gap opening and the emergence of a displacement-field-tuned band gap. Theoretical calculations reproduce these observations and identify layer-selective coupling to the moiré potential as the underlying mechanism. These results demonstrate electrical control of an emergent insulating phase in a low-dimensional moiré system, and highlight that layer polarization and layer-selective coupling in multi-band moiré heterostructures provide a powerful route for engineering topological and correlated phases through band structure reconstruction and electron interactions.

cond-mat.mes-hall↗

arXiv2026

Coexisting Massive and Massless Dirac Fermions in Moire'-Reconstructed Bilayer Graphene

We report the emergence of massless Dirac fermions in moiré-reconstructed bands of bilayer graphene (BLG) aligned with hexagonal boron nitride (hBN). Magnetotransport measurements reveal that while the primary BLG band retains a parabolic dispersion with a Berry phase of $2π$, the moiré-induced secondary bands at $n/n_0 = \pm 4$ host chiral massless quasiparticles with a Berry phase $π$ and a Fermi velocity $v_m \approx 3.6 \times 10^5 \mathrm{m s^{-1}}$. This transition from massive to massless carriers arises from topological band reconstruction driven by the hBN moiré potential. Our results demonstrate that moiré engineering in BLG/hBN offers a powerful route to tune band topology and realize coexisting Dirac and massive fermions within a single crystalline platform.

cond-mat.mes-hall↗

arXiv2025

Odd-parity longitudinal magnetoconductivity in time-reversal symmetry broken materials

Magnetotransport measurements are a sensitive probe of symmetry and electronic structure in quantum materials. While conventional metals exhibit longitudinal magnetoconductivity that is even in a magnetic field ($B$) for small $B$, we show that magnetic materials which intrinsically break time-reversal symmetry (TRS) show an {\it odd-parity magnetoconductivity} (OMC), with a leading linear-$B$ response. Using semiclassical transport theory, we derive explicit expressions for the longitudinal and transverse conductivities and identify their origin in Berry curvature and orbital magnetic moment. Crystalline symmetry analysis shows that longitudinal OMC follows the same point-group constraints as the anomalous Hall effect, while transverse OMC obeys distinct rules, providing an independent probe of TRS breaking. In the large $B$ quantum oscillation regime, we uncover both odd- and even-$B$ contributions, demonstrating OMC beyond the semiclassical picture. Explicit calculations in valley-polarized gapped graphene show that OMC peaks near the band edges, vanish in the band gap and follow the temperature dependence of the magnetic order parameter. Our results explain the odd-parity magnetoresistance recently observed in magnetized graphene and establish OMC as a robust transport signature of intrinsic TRS breaking in metals.

cond-mat.mes-hall↗

arXiv2025

Quantum Transport Spectroscopy of Pseudomagnetic Field in Graphene

Nonuniform strain in graphene acts as a valley-dependent gauge field, generating pseudomagnetic fields (PMFs) that mimic real magnetic fields but preserve global time-reversal symmetry. While local probes have visualized such fields, their quantitative detection via macroscopic transport has remained elusive. Here, we demonstrate that high-mobility graphene exhibits distinct beating patterns in Shubnikov-de Haas oscillations, arising from valley-resolved Landau quantization under different effective magnetic fields. Systematic analysis of these beats reveals universal quadratic and linear scaling of the node carrier density and Landau level filling factor with the applied magnetic field, enabling the extraction of PMFs as small as a few millitesla. Our results establish quantum oscillation spectroscopy as a robust and broadly applicable probe of strain-induced gauge fields in Dirac materials, opening avenues for mechanically tunable valleytronic and straintronic devices.

cond-mat.mes-hall↗

arXiv2025

Tunable Band Inversion in Trilayer Graphene

Displacement field control of elecronic bands in low-dimensional systems is a promising route toward engineering emergent quantum phases. Here, we report displacement-field-induced band inversion and modulation of the Berry phase of low-energy quasi particles in high-mobility Bernal-stacked trilayer graphene (TLG). Using quantum oscillations, we track the evolution of the Fermi surface and topological properties of Dirac-like gully bands that emerge under a finite interlayer potential. We observe a striking sequence of transitions: at low displacement field $D$, the gullies are characterized by a Berry phase of $2π$ and large effective mass, indicating massive fermions. As $D$ increases, the Berry phase abruptly shifts to $π$ and the effective mass reaches a minimum, signaling the onset of massless Dirac behavior. At higher $D$, the Berry phase returns to $2π$, and the effective mass increases again, consistent with a band inversion. These findings demonstrate a rare, reversible topological phase transition - massive to massless to massive - driven entirely by an external displacement field. Despite robust theoretical predictions [\textit{Phys. Rev. B} \textbf{87}, 085424 (2013), \textit{Phys. Rev. B} \textbf{87}, 115422 (2013), and \textit{Phys. Rev. B} \textbf{101}, 245411 (2020)], this evolution of the band topology had escaped experimental detection. Our results establish TLG as a tunable platform for nanoscale control of band topology. They establish a means to tune between massive and Dirac-like dispersions dynamically providing a foundation for exploring field-switchable topological phenomena in layered 2D systems.

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arXiv2025

Controlling particle-hole symmetry of fractional quantum hall states in trilayer graphene

We present a detailed experimental study of the particle-hole symmetry (PHS) of the fractional quantum Hall (FQH) states about half filling in a multiband system. Specifically, we focus on the lowest Landau level of the monolayer-like band of Bernal stacked trilayer graphene (TLG). In pristine TLG, the excitation energy gaps, Landé g-factor, effective mass, and disorder broadening of the odd-denominator FQH states are identical to their hole-conjugate counterpart. This precise PH symmetry stems from the lattice mirror symmetry that precludes Landau-level mixing. Introducing a non-zero displacement field $D$ disrupts this mirror symmetry, facilitating the hybridization between the monolayer-like and bilayer-like Landau levels. This inter-band coupling enhances the Landau level mixing factor $η$ and activates three-body interactions -- both of which explicitly break the PHS of FQHs. As a result, conventional FQHs are completely destabilized, offering a route to engineer symmetry breaking of FQHs in a controlled way. We establish that the PHS breaking in TLG is of extrinsic origin and is fundamentally distinct from the intrinsic, interaction-driven symmetry breaking observed in the lowest Landau levels of single-layer and bilayer graphene.

cond-mat.mes-hall↗

arXiv2025

Symmetry broken states at high displacement fields in ABA trilayer graphene

In this Letter, we present a comprehensive study of magnetotransport in high-mobility trilayer graphene (TLG) devices under a transverse displacement field, focusing on symmetry-broken Landau levels (LLs) from monolayer-like and bilayer-like bands. A striking displacement-field-induced enhancement of the Landé g-factor is observed in the zeroth Landau level of the monolayer-like band, highlighting the role of strong electron-electron interactions. Additionally, we find a rich landscape of LL crossings in the Dirac gully region, accompanied by phase transitions between spin-, gully-, and valley-polarized LLs. These experimental observations are successfully modeled using calculations based on optimized tight-binding parameters. Furthermore, our results reveal significant particle-hole asymmetry in the sequence of LLs in the Dirac gullies, attributed to differing g-factor values for electrons and holes. This asymmetry underscores the limitations of non-interacting models in capturing the complexities of strongly correlated multiband systems. This work provides new insights into the interplay of symmetry-breaking mechanisms and strong correlations in Bernal-stacked trilayer graphene, advancing our understanding of quantum transport phenomena in multiband systems.

cond-mat.mes-hall↗

arXiv2025

Electric field tunable bands in doubly aligned bilayer graphene hBN moire superlattice

In this letter, we demonstrate electric field-induced band modification of an asymmetrically twisted hBN/BLG/hBN supermoire lattice. Distinct from unaligned BLG/hBN systems, we observe regions in the density-displacement field (n-D) plane where the device conductance is independent of n and decreases as |D| increases. This distinction arises due to the angle asymmetry between the layers, which induces field-controlled layer polarization. We identify D-dependent additional band gaps near the charge neutrality point that appear in the conduction (valence) band for negative (positive) D values. In the quantum Hall regime, new 6-fold degenerate Landau levels are observed. Our findings establish that in an asymmetric supermoire heterostructure, an external vertical displacement field affects the valence and conduction bands very differently and sheds light on the asymmetric conductance patterns noted in previous studies.

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arXiv2024

Universality of Quantum Phase Transitions in the Integer and Fractional Quantum Hall Regimes

Fractional quantum Hall (FQH) phases emerge due to strong electronic interactions and are characterized by anyonic quasiparticles, each distinguished by unique topological parameters, fractional charge, and statistics. In contrast, the integer quantum Hall (IQH) effects can be understood from the band topology of non-interacting electrons. We report a surprising super-universality of the critical behavior across all FQH and IQH transitions. Contrary to the anticipated state-dependent critical exponents, our findings reveal the same critical scaling exponent $κ= 0.41 \pm 0.02$ and localization length exponent $γ= 2.4 \pm 0.2$ for fractional and integer quantum Hall transitions. From these, we extract the value of the dynamical exponent $z\approx 1$. We have achieved this in ultra-high mobility trilayer graphene devices with a metallic screening layer close to the conduction channels. The observation of these global critical exponents across various quantum Hall phase transitions was masked in previous studies by significant sample-to-sample variation in the measured values of $κ$ in conventional semiconductor heterostructures, where long-range correlated disorder dominates. We show that the robust scaling exponents are valid in the limit of short-range disorder correlations.

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arXiv2024

Novel Emergent Phases in a Two-Dimensional Superconductor

In this letter, we report our observation of an extraordinarily rich phase diagram of a LaScO$_3$/SrTiO$_3$ heterostructure. Close to the superconducting transition temperature, the system hosts a superconducting critical point of the Infinite-randomness type characterized by an effective dynamical exponent $νz$ that diverges logarithmically. At lower temperatures, we find the emergence of a magnetic field-tuned metallic phase that co-exists with a quantum Griffiths phase (QGP). Our study reveals a previously unobserved phenomenon in 2D superconductors -- an unanticipated suppression of the QGP below a crossover temperature in this system. This concealment is accompanied by the destruction of the superconducting quantum critical point signaled by a power-law divergence (in temperature) of the effective dynamical exponent. These observations are entirely at odds with the predictions of the infinite-randomness scenario and challenge the very concept of a vanishing energy scale associated with a quantum critical point. We develop and discuss possible scenarios like smearing of the phase transition that could plausibly explain our observations. Our findings challenge the notion that QGP is the ultimate ground state in two-dimensional superconductors.

cond-mat.supr-con↗

arXiv2024

Giant gate-controlled room temperature odd-parity magnetoresistance in magnetized bilayer graphene

Magnetotransport measurements are crucial for understanding the Fermi surface properties, magnetism, and topology in quantum materials. Here, we report the discovery of giant room temperature odd-parity magnetoresistance (OMR) in a bilayer graphene (BLG) heterostructure interfaced with Cr$_2$Te$_2$Ge$_6$ (CGT). Using magnetotransport measurements, we demonstrate that the BLG/CGT heterostructure exhibits a significant antisymmetric longitudinal magnetoresistance, indicative of intrinsic time-reversal symmetry (TRS) breaking in the system. We show that the OMR is tunable via electrostatic gating. Additionally, the OMR is pronounced near the band edges and diminishes with increasing charge carrier density in graphene. Our theoretical analysis reveals that this phenomenon arises from the coupling of the out-of-plane components of Berry curvature and orbital magnetic moment to the applied magnetic field in a TRS-broken system. Our findings establish OMR as a significant probe for TRS breaking in quantum materials in which the crystal symmetries preclude the appearance of anomalous Hall effect.

cond-mat.mes-hall↗

arXiv2024

Optical control of multiple resistance levels in graphene for memristic applications

Neuromorphic computing has emphasized the need for memristors with non-volatile, multiple conductance levels. This paper demonstrates the potential of hexagonal boron nitride (hBN)/graphene heterostructures to act as memristors with multiple resistance states that can be optically tuned using visible light. The number of resistance levels in graphene can be controlled by modulating doping levels, achieved by varying the electric field strength or adjusting the duration of optical illumination. Our measurements show that this photodoping of graphene results from the optical excitation of charge carriers from the nitrogen-vacancy levels of hBN to its conduction band, with these carriers then being transferred to graphene by the gate-induced electric field. We develop a quantitative model to describe our observations. Additionally, utilizing our device architecture, we propose a memristive crossbar array for vector-matrix multiplications.

cond-mat.mes-hall↗

arXiv2024

Controlling Umklapp scattering in bilayer graphene moir'e superlattice

In this Letter, we present experimental findings on electron-electron scattering in a two-dimensional moir'e heterostructure with tunable Fermi wave vector, reciprocal lattice vector, and band gap. We achieve this in high-mobility aligned heterostructures of bilayer graphene (BLG) and hBN. Around half-filling, the primary contribution to the resistance of BLG/hBN aligned superlattices arises from electron-electron Umklapp (Uee) scattering, making the resistance of graphene/hBN moir'e devices significantly larger than that of non-aligned devices (where Uee is forbidden). We quantify the strength of the Uee scattering and find that it follows a universal scaling with Fermi energy and has a non-monotonic dependence on the charge carrier density. The Uee scattering is strongly electric field tunable and affected by layer-polarization of BLG. It has a strong particle-hole asymmetry - the resistance when the chemical potential is in the conduction band is significantly lesser than when it is in the valence band, making the electron-doped regime more practical for potential applications.

cond-mat.mes-hall↗

arXiv2023

Observation of time-reversal symmetric Hall effect in graphene-WSe2 heterostructures at room temperature

In this letter, we provide experimental evidence of the time-reversal symmetric Hall effect in a mesoscopic system, namely high-mobility graphene/WSe$_2$ heterostructures. This linear, dissipative Hall effect, whose sign depends on the sign of the charge carriers, persists up to room temperature. The magnitude and the sign of the Hall signal can be tuned using an external perpendicular electric field. Our joint experimental and theoretical study establishes that the strain induced by lattice mismatch, or angle inhomogeneity, produces anisotropic bands in graphene while simultaneously breaking the inversion symmetry. The band anisotropy and reduced spatial symmetry lead to the appearance of a time-reversal symmetric Hall effect. Our study establishes graphene-transition metal dichalcogenide-based heterostructures as an excellent platform for studying the effects of broken symmetry on the physical properties of band-engineered two-dimensional systems.

cond-mat.mes-hall↗

arXiv2023

Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potential

This letter presents our findings on the recursive band gap engineering of chiral fermions in bilayer graphene doubly aligned with hBN. By utilizing two interfering moiré potentials, we generate a supermoiré pattern which renormalizes the electronic bands of the pristine bilayer graphene, resulting in higher-order fractal gaps even at very low energies. These Bragg gaps can be mapped using a unique linear combination of periodic areas within the system. To validate our findings, we used electronic transport measurements to identify the position of these gaps as functions of the carrier density and establish their agreement with the predicted carrier densities and corresponding quantum numbers obtained using the continuum model. Our work provides direct experimental evidence of the quantization of the area of quasi-Brillouin zones in supermoiré systems. It fills essential gaps in understanding the band structure engineering of Dirac fermions by a recursive doubly periodic superlattice potential.

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