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Anton Pokusinskyi

Publications and source records attributed to Anton Pokusinskyi.

2 recordsLinked to original sources

Vortex rivers and multiple voltage transitions in superconducting MgB$_2$ thin films

Vortex dynamics govern the dissipation and magneto-resistive properties of type-II superconductors. At large transport currents, the current-voltage ($I$-$V$) characteristics of a superconductor in the mixed state usually exhibit a nonlinear upturn followed by an abrupt jump occurring due to a flux-flow instability. However, other transition behaviors are also possible, including the formation of phase-slip lines and normal domains. Which mechanism dominates depends on the sample uniformity, its dimensions relative to the coherence length and penetration depth, and the rates of electron energy relaxation and heat removal. Here, based on the time-dependent Ginzburg-Landau equation, we present the results of numerical modeling of the $I$-$V$ curves of superconducting films with various types of disorder. For a grain-boundary defect mesh, we find multiple voltage transitions overlaid with a nonlinear upturn of the $I$-$V$ curves. For randomly arranged elongated defects, the $I$-$V$ curves exhibit voltage steps, whereas for L-shaped defects oriented perpendicular to the transport current, the $I$-$V$ curves show extended linear regimes separated by voltage transitions. We analyze the evolution of the order parameter along the $I$-$V$ curves and discuss the experimental accessibility of the revealed dynamics regimes.

cond-mat.supr-con

Crystal structure effects on vortex dynamics in superconducting MgB$_2$ thin films

The current-driven resistive transition is central to superconducting single-photon detectors, transition-edge sensors, and fluxonic devices. Depending on sample uniformity, dimensions, and heat removal, it can be driven by phase-slip events, flux-flow instabilities (FFI), or normal-domain formation. Here, we investigate the influence of two types of microstructural defects on vortex dynamics in MgB$_2$ films: columnar growth in textured films and buffer-layer roughness in single-crystal films. The current-voltage ($I$-$V$) curves measured at $T \approx 0.25 T_\mathrm{c}$ for both films exhibit multiple steps. Time-dependent Ginzburg-Landau simulations reproduce the major features of the experimental $I$-$V$ curves and suggest that the resistive transitions for both films are mediated by the formation and growth of normal domains rather than FFI. The single-crystal film with buffer-layer roughness exhibits superconductivity breakdown at higher currents and pinning activation energies approximately twice those of the textured film, along with more pronounced multi-step features in the $I$-$V$ curves. These features are attributed to the combination of stronger pinning induced by lateral variations of the superconducting order parameter along the MgO buffer layer and its lower thermal boundary resistance. Our results show that both the film microstructure and the film-buffer interface are critical for the resistive transition, offering insights for superconducting devices requiring controlled dissipation at high transport currents.

cond-mat.supr-con