arXiv Science⌕ Search

arXiv subjects

Antoine Descos

Publications and source records attributed to Antoine Descos.

5 recordsLinked to original sources
arXiv2026

Single-Mode Control of High-Speed and Low-Threshold III-V/Si Quantum Dot Microring Lasers via Azimuthal Gratings

Hybrid III-V/silicon quantum-dot microring lasers are compact, energy-efficient O-band sources, but their whispering-gallery cavities are inherently multimode and bidirectional, producing unstable mode hopping that is incompatible with dense wavelength-division multiplexing. We show that an azimuthal grating patterned into the silicon ring - a single lithographic degree of freedom - converts this multimode cavity into a wavelength-addressed, single-mode source. A coupled-mode analysis derives the angular-momentum selection rule from first principles and shows that the inner-wall corrugation replaces the degenerate counter-propagating pair with symmetric and anti-symmetric standing-wave supermodes of unequal radiative loss. At the second-order Bragg condition the anti-symmetric mode is symmetry-protected, yielding a high-quality-factor state at exactly one azimuthal order; finite-element simulations confirm this and identify grating depth as the primary loss-engineering handle. Devices fabricated in-house on a 100 mm silicon-on-insulator platform hold a single longitudinal order with a side-mode suppression ratio of 37.9 dB and continuous, hop-free tuning, while the emission wavelength stays fixed across a factor-of-two change in cavity loading, set lithographically rather than by the gain peak. Because the grating decouples the lasing wavelength from the quantum-dot gain, the detuning becomes a mask-level design variable that sets the temperature of minimum threshold current, reaching 1.95 mA near 50 °C. Combined with side-mode suppression beyond 37 dB and multi-gigahertz direct modulation, these lasers are practical building blocks for cascaded, wavelength-addressed transmitter arrays in data communication and co-packaged optics.

physics.optics↗
arXiv2026

Demonstration and Design of Uni-Directional and Ultra-Low Threshold Hybrid Quantum Dot III-V/Si Micro-Ring Laser

Micro-ring lasers (MRLs) are attractive light sources for energy-efficient optical interconnects, but their intrinsic directional bistability leads to unpredictable clockwise/counter-clockwise emission. We demonstrate stable unidirectional emission in hybrid quantum-dot (QD) III-V/Si MRLs using passive reflective feedback integrated on the bus waveguide, leaving the ring cavity unperturbed. Three reflector architectures - Y-splitter loop mirrors, adiabatic Y-splitter loop mirrors, and distributed Bragg reflectors (DBRs) - are benchmarked against a reflector-free bidirectional baseline through combined experiment and coupled-mode-theory rate-equation modeling. All designs preserve ultra-low thresholds of 0.79-1.12 mA (112-158 A/cm^2, roughly an order of magnitude below prior quantum-well unidirectional ring lasers) while enhancing single-facet output power and wall-plug efficiency, with directional isolation up to 27.65 dB for the DBR. The reflectors impose no penalty on the 4-5 GHz modulation bandwidth or its thermal robustness, establishing passive external feedback as a practical route to unidirectional QD MRLs for DWDM-scale optical interconnects.

physics.optics↗
arXiv2026

Experimental Design Space Exploration of Ultra-Low Threshold Hybrid III-V/Si Quantum Dot Microring Lasers

In this work, we report on the design strategies and experimental validation of ultra-low threshold ($< 0.8\,\mathrm{mA}$) hybrid III--V/Si quantum dot (InAs/GaAs) micro-ring lasers with optical output powers $> 2\,\mathrm{mW}$ for $1.3\,μ\mathrm{m}$ emission. The multi-dimensional design exploration allows for the demonstration of record wall-plug efficiencies ($\sim 10\%$) and threshold current densities ($109\,\mathrm{A/cm^2}$) for these compact sources on silicon. We also demonstrate the thermal performance of several designs with record characteristic temperature values of $T_0 = 212\,\mathrm{K}$, indicating minimal temperature dependence of the threshold current. In addition, the high differential gain allows for the demonstration of 3-dB bandwidths up to $5\,\mathrm{GHz}$.

physics.optics↗
arXiv2023

Fast and energy-efficient non-volatile III-V-on-silicon photonic phase shifter based on memristors

Silicon photonics has evolved from lab research to commercial products in the past decade as it plays an increasingly crucial role in data communication for next-generation data centers and high performance computing1. Recently, programmable silicon photonics has also found new applications in quantum2 and classical 3 information processing. A key component of programmable silicon photonic integrated circuits (PICs) is the phase shifter, traditionally realized via the thermo-optic or plasma dispersion effect which are weak, volatile, and power hungry. A non-volatile phase shifter can circumvent these limitations by requiring zero power to maintain the switched phases. Previously non-volatile phase modulation was achieved via phase-change4 or ferroelectric materials5, but the switching energy remains high (pico to nano joules) and the speed is slow (micro to milli seconds). Here, we report a non-volatile III-V-on-silicon photonic phase shifter based on HfO2 memristor with sub-pJ switching energy (~400fJ), representing over an order of magnitude improvement in energy efficiency compared to the state of the art. The non-volatile phase shifter can be switched reversibly using a single 100ns pulse and exhibits an excellent endurance over 800 cycles. This technology can enable future energy-efficient programmable PICs for data centers, optical neural networks, and quantum information processing.

physics.optics↗