arXiv subjects

Andrew Leenheer

Publications and source records attributed to Andrew Leenheer.

10 recordsLinked to original sources

arXiv2026

Resonant multi-harmonic acousto-optics for programmable frequency control of visible light in a CMOS platform

Scaling quantum control for atoms, ions, and solid-state emitters requires gigahertz-frequency spectral control of high-power visible light in a volume-manufacturable platform. Silicon nitride photonics provides high power handling and CMOS-foundry compatibility but has no intrinsic mechanism for high-speed modulation. Integration with piezoelectric materials enables acousto-optic phase modulation, and mechanical resonant enhancement has made it efficient at gigahertz frequencies. However, a single resonance restricts the modulation waveform to a single tone, imposing Bessel-function sideband amplitudes and limiting frequency-shifting efficiency to 33.9%. Here we engineer a silicon nitride acousto-optic microstructure to support harmonically spaced resonances at 1.14 GHz and 2.28 GHz, each strongly optomechanically coupled to a 730 nm guided optical mode, so that tailored non-sinusoidal modulation waveforms can be resonantly synthesized. By piezoelectrically controlling the two mechanical amplitudes and their relative phase, we demonstrate 50% conversion to one sideband (1.5x the single-tone theoretical maximum), a flat seven-line comb, and a frequency shift with 60 dB carrier and 53 dB image suppression - to our knowledge the highest reported for an integrated modulator. The devices are fabricated in a 200 mm CMOS foundry, and we measure 91.7% yield without post-fabrication tuning across 36 devices from three wafers. We also show how the technique can be straightforwardly scaled to three or more harmonics. This result overcomes the trade-off between resonant enhancement and spectral programmability, with important consequences including improved single-qubit gate efficiency for hyperfine qubits.

physics.optics↗

arXiv2026

Ultra-low loss piezo-optomechanical low-confinement silicon nitride platform for visible wavelength quantum photonic circuits

Realizing photonic quantum computing at scale requires integrated circuits that combine ultra-low loss with fast, low-power, low-hysteresis, and low-crosstalk reconfiguration. These requirements are particularly challenging at visible wavelengths, where many quantum resource-state generators, including single-photon sources and quantum memories, naturally operate. Low-confinement silicon nitride waveguides offer the requisite loss performance, but conventional thermo-optic modulators dissipate significant static power, driving thermal crosstalk and precluding cryogenic operation. Visible-wavelength piezo-optomechanical circuits avoid these drawbacks, but existing demonstrations rely either on high-confinement waveguides with propagation losses of 35-100 dB/m, or on low-confinement platforms using foundry-incompatible PZT. Here we combine piezo-optomechanical actuation with a CMOS-foundry-fabricated, low-confinement silicon nitride platform, achieving 2.6 dB/m propagation loss at 780 nm, megahertz-scale modulation bandwidth, a half-wave voltage-length product of 2.8 Vm, and negligible hysteresis. We demonstrate reconfigurable Mach-Zehnder interferometers with 0.63 dB loss per spiral phase shifter, enabling deep, actively reconfigurable visible-wavelength quantum photonic circuits.

physics.optics↗

arXiv2025

An integrated photonics platform for high-speed, ultrahigh-extinction, many-channel quantum control

High-fidelity control of the thousands to millions of programmable qubits needed for utility-scale quantum computers presents a formidable challenge for control systems. In leading atomic systems, control is optical: UV-NIR beams must be fanned out over numerous spatial channels and modulated to implement gates. While photonic integrated circuits (PICs) offer a potentially scalable solution, they also need to simultaneously feature high-speed and high-extinction modulation, strong inter-channel isolation, and broad wavelength compatibility. Here, we introduce and experimentally validate a foundry-fabricated PIC platform that overcomes these limitations. Designed for Rubidium-87 neutral atom quantum computers, our 8-channel PICs, fabricated on a 200-mm wafer process, demonstrate an advanced combination of performance metrics. At the 795 nm single-qubit gate wavelength, we achieve a mean extinction ratio (ER) of 71.4 $\pm$ 1.1 dB, nearest-neighbor on-chip crosstalk of -68.0 $\pm$ 1.0 dB, and -50.8 $\pm$ 0.2 dB after parallel beam delivery in free-space. This high-performance operation extends to the 420 nm and 1013 nm wavelengths for two-qubit Rydberg gates, showing ERs of 42.4 dB (detector-limited) and 61.5 dB, respectively. The devices exhibit 10-90% rise times of 26 $\pm$ 7 ns, achieve dynamic switching to -60 dB levels within microsecond timescales, and show pulse stability errors at the $10^{-3}$ level. This work establishes a scalable platform for developing advanced large-scale optical control required in fault-tolerant quantum computers and other precision technologies.

quant-ph↗

arXiv2025

CMOS-fabricated ultraviolet light modulators using low-loss alumina piezo-optomechanical photonic circuits

Ultra-violet (UV) and near-UV wavelengths are necessary for many important optical transitions for quantum technologies and various sensing mechanisms for biological and chemical detection. However, all well-known photonic platforms have excessively high losses in the UV, which has prevented photonic integrated circuits (PICs) being used to address these and other important application spaces. Photonic waveguides using low-loss alumina cores have emerged as a promising solution because of almunia's large optical bandgap and the high quality of films enabled by atomic layer deposition. However, to the best of our knowledge, active alumina PICs have only been realized using thermo-optic tuning, which precludes switching speeds shorter than one microsecond, high circuit densities, and cryogenically compatible operation. Here, we introduce a CMOS-fabricated, piezo-optomechanical PIC platform using alumina waveguides with low optical losses at UV wavelengths and aluminum nitride piezoelectric strain actuators, which solves the issues associated with thermal tuning. We demonstrate a high-performance, reconfigurable optical filter operating at wavelengths as low as 320 nm. The filter has a 6 nanosecond switching time, a loaded linewidth of 3.3 GHz, tuning rate of -120 MHz/V, and a hold power less than 20 nW.

physics.optics↗

arXiv2025

Scalable low loss cryogenic packaging of quantum memories in CMOS-foundry processed photonic chips

Optically linked solid-state quantum memories such as color centers in diamond are a promising platform for distributed quantum information processing and networking. Photonic integrated circuits (PICs) have emerged as a crucial enabling technology for these systems, integrating quantum memories with efficient electrical and optical interfaces in a compact and scalable platform. Packaging these hybrid chips into deployable modules while maintaining low optical loss and resiliency to temperature cycling is a central challenge to their practical use. We demonstrate a packaging method for PICs using surface grating couplers and angle-polished fiber arrays that is robust to temperature cycling, offers scalable channel count, applies to a wide variety of PIC platforms and wavelengths, and offers pathways to automated high-throughput packaging. Using this method, we show optically and electrically packaged quantum memory modules integrating all required qubit controls on chip, operating at millikelvin temperatures with < 3dB losses achievable from fiber to quantum memory.

quant-ph↗

arXiv2025

Gigahertz-Frequency, Acousto-Optic Phase Modulation of Visible Light in a CMOS-Fabricated Photonic Circuit

Here we present an efficient, visible-light, gigahertz-frequency acousto-optic modulator fabricated on a 200 mm wafer in a volume CMOS foundry. Our device combines a piezoelectric transducer and a photonic waveguide within a single microstructure that confines both a propagating optical mode and an electrically excitable breathing-mode mechanical resonance. By tuning the device's geometry to optimize the optomechanical interaction, we achieve modulation depths exceeding 2 rad with 15 mW applied microwave power at 2.31 GHz in a 2 mm long device. This corresponds to a modulation figure of merit of $V_π\cdot L$ = 0.26 Vcm in a visible-light, integrated acousto-optics platform that can be straightforwardly extended to a wide range of optical wavelengths and modulation frequencies. For the important class of gigahertz-frequency modulators that can handle hundreds of milliwatts of visible-light optical power, which are critical for scalable quantum control systems, this represents a 15x decrease in $V_π$ and a 100x decrease in required microwave power compared to the commercial state-of-the-art and existing work in the literature.

physics.optics↗

arXiv2023

High-fidelity trapped-ion qubit operations with scalable photonic modulators

Experiments with trapped ions and neutral atoms typically employ optical modulators in order to control the phase, frequency, and amplitude of light directed to individual atoms. These elements are expensive, bulky, consume substantial power, and often rely on free-space I/O channels, all of which pose scaling challenges. To support many-ion systems like trapped-ion quantum computers or miniaturized deployable devices like clocks and sensors, these elements must ultimately be microfabricated, ideally monolithically with the trap to avoid losses associated with optical coupling between physically separate components. In this work we design, fabricate, and test an optical modulator capable of monolithic integration with a surface-electrode ion trap. These devices consist of piezo-optomechanical photonic integrated circuits configured as multi-stage Mach-Zehnder modulators that are used to control the intensity of light delivered to a single trapped ion on a separate chip. We use quantum tomography employing hundreds of multi-gate sequences to enhance the sensitivity of the fidelity to the types and magnitudes of gate errors relevant to quantum computing and better characterize the performance of the modulators, ultimately measuring single qubit gate fidelities that exceed 99.7%.

quant-ph↗

arXiv2023

Nanoelectromechanical control of spin-photon interfaces in a hybrid quantum system on chip

Atom-like defects or color centers (CC's) in nanostructured diamond are a leading platform for optically linked quantum technologies, with recent advances including memory-enhanced quantum communication, multi-node quantum networks, and spin-mediated generation of photonic cluster states. Scaling to practically useful applications motivates architectures meeting the following criteria: C1 individual optical addressing of spin qubits; C2 frequency tuning of CC spin-dependent optical transitions; C3 coherent spin control in CC ground states; C4 active photon routing; C5 scalable manufacturability; and C6 low on-chip power dissipation for cryogenic operations. However, no architecture meeting C1-C6 has thus far been demonstrated. Here, we introduce a hybrid quantum system-on-chip (HQ-SoC) architecture that simultaneously achieves C1-C6. Key to this advance is the realization of piezoelectric strain control of diamond waveguide-coupled tin vacancy centers to meet C2 and C3, with ultra-low power dissipation necessary for C6. The DC response of our device allows emitter transition tuning by over 20 GHz, while the large frequency range (exceeding 2 GHz) enables low-power AC control. We show acoustic manipulation of integrated tin vacancy spins and estimate single-phonon coupling rates over 1 kHz in the resolved sideband regime. Combined with high-speed optical routing with negligible static hold power, this HQ-SoC platform opens the path to scalable single-qubit control with optically mediated entangling gates.

quant-ph↗

arXiv2021

Characterization of Suspended Membrane Waveguides towards a Photonic Atom Trap Integrated Platform

We demonstrate an optical waveguide device, capable of supporting the high, in-vacuum, optical power necessary for trapping a single atom or a cold atom ensemble with evanescent fields. Our photonic integrated platforms, with suspended membrane waveguides, successfully manages optical powers of 6 mW (500 um span) to nearly 30 mW (125 um span) over an un-tethered waveguide span. This platform is compatible with laser cooling and magneto-optical traps (MOTs) in the vicinity of the suspended waveguide, called the membrane MOT and the needle MOT, a key ingredient for efficient trap loading. We evaluate two novel designs that explore critical thermal management features that enable this large power handling. This work represents a significant step toward an integrated platform for coupling neutral atom quantum systems to photonic and electronic integrated circuits on silicon.

quant-ph↗

arXiv2015

How Voltage Drops are Manifested by Lithium Ion Configurations at Interfaces and in Thin Films on Battery Electrodes

Battery electrode surfaces are generally coated with electronically insulating solid films of thickness 1-50 nm. Both electrons and Li+ can move at the electrode-surface film interface in response to the voltage, which adds complexity to the "electric double layer" (EDL). We apply Density Functional Theory (DFT) to investigate how the applied voltage is manifested as changes in the EDL at atomic lengthscales, including charge separation and interfacial dipole moments. Illustrating examples include Li(3)PO(4), Li(2)CO(3), and Li(x)Mn(2)O(4) thin-films on Au(111) surfaces under ultrahigh vacuum conditions. Adsorbed organic solvent molecules can strongly reduce voltages predicted in vacuum. We propose that manipulating surface dipoles, seldom discussed in battery studies, may be a viable strategy to improve electrode passivation. We also distinguish the computed potential governing electrons, which is the actual or instantaneous voltage, and the "lithium cohesive energy" based voltage governing Li content widely reported in DFT calculations, which is a slower-responding self-consistency criterion at interfaces. This distinction is critical for a comprehensive description of electrochemical activities on electrode surfaces, including Li+ insertion dynamics, parasitic electrolyte decomposition, and electrodeposition at overpotentials.

cond-mat.mtrl-sci↗