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Andrew Haky

Publications and source records attributed to Andrew Haky.

3 recordsLinked to original sources

Spectroscopy on a single nonlinear mode recognizes quantum states

Characterising optical quantum states is essential for the development of quantum technologies. While traditional approaches to perform full quantum state tomography are often experimentally demanding, neuromorphic architectures may provide an effective alternative. In this work, we demonstrate how a quantum nonlinear driven-dissipative mode is sufficient to act as a quantum reservoir. By analyzing the occupations at different frequencies in the emission spectrum, a linear regression suffices in many cases to recognize the relevant parameters of incident squeezed states. Beyond highlighting the general potential of this approach under continuous driving, we illustrate its effectiveness in an explicit nontrivial example where the source is a degenerate optical parametric oscillator (OPO), coupled to a nonlinear polariton microcavity.

quant-ph

Semiconductor quantum plasmons for high frequency thermal emission

Plasmons in heavily doped semiconductor layers are optically active excitations with sharp resonances in the 5-15 um wavelength region set by the doping level and the effective mass. Here we demonstrate that volume plasmons can form in doped layers of widths of hundreds of nanometers, without the need of potential barrier for electronic confinement. Their strong interaction with light makes them perfect absorber and therefore suitable for incandescent emission. Moreover, by injecting microwave current in the doped layer, we can modulate the temperature of the electron gas. We have fabricated devices for high frequency thermal emission and measured incandescent emission up to 50MHz, limited by the cutoff of our detector. The frequency dependent thermal emission is very well reproduced by our theoretical model that let us envision a frequency cutoff in the tens of GHz.

cond-mat.mes-hall

Semiconductor quantum plasmonics

We investigate the frontier between classical and quantum plasmonics in highly doped semiconductor layers. The choice of a semiconductor platform instead of metals for our study permits an accurate description of the quantum nature of the electrons constituting the plasmonic response, which is a crucial requirement for quantum plasmonics. Our quantum model allows us to calculate the collective plasmonic resonances from the electronic states determined by an arbitrary one-dimensional potential. Our approach is corroborated with experimental spectra, realized on a single quantum well, in which higher order longitudinal plasmonic modes are present. We demonstrate that their energy depends on the plasma energy, as it is also the case for metals, but also on the size confinement of the constituent electrons. This work opens the way towards the applicability of quantum engineering techniques for semiconductor plasmonics.

cond-mat.mes-hall