arXiv subjects
Publications and source records attributed to Andrei Lunin.
The paper considers the effect of degenerate higher-order mode (HOM) interaction, which may lead to the formation of trapped modes with high shunt impedance. Methods for eliminating these modes are discussed.
The Josephson junction and shunt capacitor form a transmon qubit, which is the cornerstone of modern quantum computing platforms. For reliable quantum computing, it is important how long a qubit can remain in a superposition of quantum states, which is determined by the coherence time (T1). The coherence time of a qubit effectively sets the "lifetime" of usable quantum information, determining how long quantum computations can be performed before errors occur and information is lost. There are several sources of decoherence in transmon qubits, but the predominant one is generally considered to be dielectric losses in the natural oxide layer formed on the surface of the superconductor. In this paper, we present a numerical study of microwave surface losses in planar superconducting antennas of different transmon qubit designs. An asymptotic method for estimating the energy participation ratio in ultrathin films of nanometer scales is proposed, and estimates are given for the limits of achievable minimum RF losses depending on the electrical properties of the surface oxide and the interface of the qubit with the substrate material.
Elucidating dielectric losses, structural heterogeneity, and interface imperfections is critical for improving coherence in superconducting qubits. However, most diagnostics rely on destructive electron microscopy or low-throughput millikelvin quantum measurements. Here, we demonstrate noninvasive terahertz (THz) nano-imaging/-spectroscopy of encapsulated niobium transmon qubits, revealing sidewall near-field scattering that correlates with qubit coherence. We further employ a THz hyperspectral line scan to probe dielectric responses and field participation at Al junction interfaces. These findings highlight the promise of THz near-field methods as a high-throughput proxy characterization tool for guiding material selection and optimizing processing protocols to improve qubit and quantum circuit performance.
Realizing the promise of quantum computing requires simultaneously increasing Hilbert-space size and coherence times. While qubit-based architectures have long been the dominant paradigm, large local Hilbert spaces enable qudits, which offer more compact circuits and natural representations for quantum simulation in chemistry, condensed matter, and high-energy physics. Superconducting radio-frequency (SRF) cavities are attractive building blocks for qudit-based quantum technologies because of their exceptionally low dissipation and large bosonic Hilbert spaces, but turning them into programmable modules requires extra effort because the nonlinear circuitry required for control and measurement often introduces loss and noise that erode the memory advantage. Here we demonstrate a two-mode SRF cavity module weakly coupled to an ancillary transmon circuit and engineered to suppress controller-induced dissipation and dephasing, achieving single-photon lifetimes of 20.6 ms and 15.6 ms and a dephasing time exceeding 40 ms. Using sideband interactions together with error-resilient protocols incorporating measurement-based correction and post-selection, we prepare Fock states up to $N=20$ with fidelities exceeding 95% and generate two-mode entanglement near the coherence limit, approaching 99.9%. By combining ultracoherent storage with high-fidelity control, this work moves cavity-based hardware beyond memory-only operation and establishes a practical route toward high-dimensional encodings and scalable modular quantum information processing.
The Superconducting Materials and Systems (SQMS) Center, a DOE National Quantum Information Science Research Center, has conducted a comprehensive and coordinated study using superconducting transmon qubit chips with known performance metrics to identify the underlying materials-level sources of device-to-device performance variation. Following qubit coherence measurements, these qubits of varying base superconducting metals and substrates have been examined with various nondestructive and invasive material characterization techniques at Northwestern University, Ames National Laboratory, and Fermilab as part of a blind study. We find trends in variations of the depth of the etched substrate trench, the thickness of the surface oxide, and the geometry of the sidewall, which when combined, lead to correlations with the T$_1$ lifetime across different devices. In addition, we provide a list of features that varied from device to device, for which the impact on performance requires further studies. Finally, we identify two low-temperature characterization techniques that may potentially serve as proxy tools for qubit measurements. These insights provide materials-oriented solutions to not only reduce performance variations across neighboring devices, but also to engineer and fabricate devices with optimal geometries to achieve performance metrics beyond the state-of-the-art values.
Temporal fluctuations in the superconducting qubit lifetime, $T_1$, bring up additional challenges in building a fault-tolerant quantum computer. While the exact mechanisms remain unclear, $T_1$ fluctuations are generally attributed to the strong coupling between the qubit and a few near-resonant two-level systems (TLSs) that can exchange energy with an assemble of thermally fluctuating two-level fluctuators (TLFs) at low frequencies. Here, we report $T_1$ measurements on the qubits with different geometrical footprints and surface dielectrics as a function of the temperature. By analyzing the noise spectrum of the qubit depolarization rate, $\Gamma_1 = 1/T_1$, we can disentangle the impact of TLSs, non-equilibrium quasiparticles (QPs), and equilibrium (thermally excited) QPs on the variance in $\Gamma_1$. We find that $\Gamma_1$ variances in the qubit with a small footprint are more susceptible to the QP and TLS fluctuations than those in the large-footprint qubits. Furthermore, the QP-induced variances in all qubits are consistent with the theoretical framework of QP diffusion and fluctuation. We suggest these findings can offer valuable insights for future qubit design and engineering optimization.
We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different capping materials, such as tantalum, aluminum, titanium nitride, and gold, and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T$_1$ relaxation times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 300 microseconds, with maximum values up to 600 microseconds, that represent the highest lifetimes to date for superconducting qubits prepared on both sapphire and silicon. Our comparative structural and chemical analysis suggests why amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
The Superconducting Quantum Materials and Systems center is developing searches for dark photons, axions and ALPs with the goal of improving upon the current state-of-the-art sensitivity. These efforts leverage on Fermi National Accelerator expertise on ultra-high quality factor superconducting radio frequency cavities combined with the center research on quantum technology. Here we focus on multiple axion searches that utilize ~1E10 quality factor superconducting radio frequency cavities and their resonant modes to enhance the production and/or detection of axions in the cavity volume. In addition, we present preliminary results of single-mode and multi-mode nonlinearity measurements that were carried out as part of an experimental feasibility study to gain insight on the behavior of the ultra-high quality factor resonators and the experimental RF system in the regime relevant for axion searches.
This is a Snowmass white paper on the utility of existing and future superconducting cavities to probe fundamental physics. Superconducting radio frequency (SRF) cavity technology has seen tremendous progress in the past decades, as a tool for accelerator science. With advances spear-headed by the SQMS center at Fermilab, they are now being brought to the quantum regime becoming a tool in quantum science thanks to the high degree of coherence. The same high quality factor can be leveraged in the search for new physics, including searches for new particles, dark matter, including the QCD axion, and gravitational waves. We survey some of the physics opportunities and the required directions of R&D. Given the already demonstrated integration of SRF cavities in large accelerator systems, this R&D may enable larger scale searches by dedicated experiments.
In this letter, we present the direct loss tangent measurement of a high-resistivity intrinsic (100) silicon wafer in the temperature range from ~ 70 mK to 1 K, approaching the quantum regime. The measurement was performed using a technique that takes advantage of a high quality factor superconducting niobium resonator and allows to directly measure the loss tangent of insulating materials with high level of accuracy and precision. We report silicon loss tangent values at the lowest temperature and for electric field amplitudes comparable to those found in planar transmon devices one order of magnitude larger than what was previously estimated. In addition, we discover a non-monotonic trend of the loss tangent as a function of temperature that we describe by means of a phenomenological model based on variable range hopping conduction between localized states around the Fermi energy. We also observe that the dissipation increases as a function of the electric field and that this behavior can be qualitatively described by the variable range hopping conduction mechanism as well. This study lays the foundations for a novel approach to investigate the loss mechanisms and accurately estimate the loss tangent in insulating materials in the quantum regime, leading to a better understanding of coherence in quantum devices.