Nanowire-Assisted Epitaxial Lateral Overgrowth of Planar GaN(0001) on Diamond(100)
GaN-on-diamond heterostructures are promising for high-power and high-frequency electronics, however, direct epi- taxial growth on diamond (100) remains challenging due to severe lattice and thermal mismatches, which induce high threading dislocation densities. To overcome this challenge, we have used Plasma Assisted Molecular Beam Epitaxy (PAMBE) to grow wurtzite GaN layers on diamond(100) substrates using nanowire-assisted epitaxial lateral overgrowth (ELOG). Two nanowire templates (NW100, NW600) were benchmarked against a nanowire-free reference (NW000). High-resolution XRD, ϕ -scans, (0002) pole figures, and reciprocal space mapping show that NW100 attains the lowest dislocation density (5.51 x 10-4 nm-2) and microstrain (2.736 x 10-3), the narrowest (0002) reflection, and a c-axis lattice parameter (5.1821 Å) within 0.06% of the bulk value; NW000, in contrast, exhibits a contracted c-axis (5.1633 Å) and elevated dislocation density (6.26 x 10-4 nm-2), consistent with residual tensile stress. Cross-sectional TEM con- firms the intended diamond/AlN/nanowire/ELOG/planar-GaN layer sequence and shows threading dislocations bending into near-lateral trajectories, directly evidencing defect filtering by the nanowire template. Together, these results estab- lish nanowire-assisted ELOG as an effective strategy to suppress dislocation propagation and recover near-bulk lattice parameters in GaN-on-diamond heteroepitaxy, providing a structurally well-defined platform for device integration.