arXiv subjects

Alok Shukla

Publications and source records attributed to Alok Shukla.

At least 91 records · Page 5Linked to original sources

arXiv2021

Elucidating the Influence of Native Defects on Electrical and Optical Properties in Semiconducting Oxides: An Experimental and Theoretical Investigation

Defect engineering using self-doping or creating vacancies in polycrystalline oxide based materials has profound influence on optical absorption, UV photo detection, and electrical switching. However, defects induced semiconducting oxide devices show enhancement in photo detection and photosensitivity, and hence still remain interesting in the field of optoelectronics. In this study, defect engineering in semiconducting oxide materials is discussed along with their roles in optoelectronic device-based applications. Theoretical investigations have been done for identifying defect states by performing first-principles electronic structure calculations, employing the density-functional theory. Particularly, in this work, we have focused on probing the defect-induced changes in optical and electrical processes by means of experimental as well as computational investigations. Hence, systematic experimental measurements of optical absorption, electrical switching, charge density, and photocurrent in defect-rich semiconducting oxide samples have been performed. Our results suggest that defects can lead to enhancement of optoelectronic properties such as photocurrent, switching speed, optical absorption, etc. for semiconducting oxide based devices.

cond-mat.mtrl-sci↗

arXiv2021

Scandium decorated C$_{24}$ fullerene as high capacity reversible hydrogen storage material: Insights from density functional theory simulations

Using first-principles density functional theory simulations, we have observed that the scandium decorated C$_{24}$ fullerene can adsorb up to six hydrogen molecules with an average adsorption energy of -0.35 eV per H$_2$ and average desorption temperature of 451 K. The gravimetric wt % of hydrogen for the scandium decorated C$_{24}$ fullerene system is 13.02%, which is sufficiently higher than the Department of Energy, United States demand. Electronic structure, orbital interactions, and charge transfer mechanisms are explained using the density of states, spatial charge density difference plots, and Bader charge analysis. A total amount of 1.44e charge transfer from the 3d and 4s orbitals of scandium to the 2p carbon orbitals of C$_{24}$ fullerene. Hydrogen molecules are attached to scandium decorated C$_{24}$ fullerene by Kubas type of interactions. Diffusion energy barrier calculations predict that the existence of a sufficient energy barrier will prevent metal-metal clustering. Ab-initio molecular dynamics (A.I.M.D.) simulations confirm the solidity of the structure at the highest desorption temperature. Therefore, we believe that the scandium decorated C$_{24}$ fullerene system is a thermodynamically stable, promising reversible high-capacity hydrogen storage device.

cond-mat.mtrl-sci↗

arXiv2021

Graphene quantum dots with Stone-Wales defect as a topologically tunable platform for visible-light harvesting

In this work, we report for the first time the crucial role of topological anomalies like Stone-Wales (SW) type bond rotations in tuning the optical properties of graphene quantum dots (GQDs). By means of first-principles calculations, we first show that the structural stability of GQDs strongly depends on position of SW defects. Optical absorption spectra is then computed using electron-correlated methodology to demonstrate that SW type reconstruction is responsible for the appearance of new defect-induced peaks below the optical gap and dramatically modifies the optical absorption profile. In addition, our investigations signify that electron correlation effects become more dominant for SW-defected GQDs. We finally establish that the introduction of SW defects at specific locations strongly enhances light absorption in visible range, which is of prime importance for designing light harvesting, photocatalytic and optoelectronic devices.

cond-mat.mes-hall↗

arXiv2021

Molecular Switching Operation in Gate Constricted Interface of MoS$_2$ and hBN Heterostructure

Combined diverse two-dimensional (2D) materials for semiconductor interfaces are attractive for electrically controllable carrier confinement to enable excellent electrostatic control. We investigated the transport characteristic in heterointerface of multilayer molybdenum disulfide and hexagonal boron nitride (MoS$_2$/h-BN) to reveal that the charge transfer switching (CTS) is highly dependent on both the local gate constriction and bias in the channel. Notably, the CTS is shown to be controlled at a molecular level through electrotunable gated constriction. The resulting significant change in conductance due to exposing 100 parts-per-billion of nitrogen dioxide gas led to a high on/off ratio of 10 2 for completely switching off the channel thus, acting as a molecular switch. First-principle calculations further explained the mechanism of molecular CTS in the device. The molecular tunability of CTS has not been previously reported in any of the van der Waals semiconductor interfaces. Our finding opens avenues to exploit various atomically thin heterostructures for the mesoscopic transport phenomena towards molecular switching operation at room temperature.

cond-mat.mes-hall↗

arXiv2021

Role of Defect Induced Interfacial States in Molecular Sensing: Ultrahigh- Sensitive Region for Molecular Interaction

The defect induced interfacial states are created in an atomically thin two-dimensional molybdenum disulfide channel by underlying a narrow pattern of a graphene layer in a field effect transistor. Nondestructive method for the generation of charge-state allowed a highly sensitive molecular interaction with the sensitivity of nearly three-order of magnitude at room temperature. The presence of interfacial states in the channel lead to a conductance fluctuation and its magnitude is modulated using the nitrogen dioxide gas molecules in the subthreshold region. The study provides a systematic approach to establish a correlation between modulated conductance fluctuation and the molecular concentration upto parts-per-billion. First-principles density functional theory further explains the role of unique interfacial configuration on conductance fluctuation. Therefore, our study demonstrates an experimental approach to induce charge-state for the modulation of carrier concentration and exploits the role of defect induced interfacial states in atomically thin interfaces for the molecular interaction.

cond-mat.mes-hall↗

arXiv2021

When do we have 1 + 1 = 11 and 2 + 2 =5?

The phrase "$ 2+2=5 $" is a cliché or a slogan used in political speeches, propaganda, or literature, most notably in the novel "$ 1984 $" by George Orwell. More recently, we came across a You-Tube short film comedy, Alternative Math, produced by IdeaMan Studios (see \cite{Danny}). It is a hilarious exaggeration of a teacher who is dragged through the mud for teaching that $ 2+2=4 $ and not $ 22 $, as Danny, a young student, kept on insisting. In the movie, Danny and the whole community sincerely believe $ 1+1=11 $ and $ 2+2=22 $. Jokes aside, we ask the question whether a polynomially defined group law "$\oplus$" defined over the field of rationals such that $ 1\oplus1=u $ and $ 2 \oplus2=v $ can simultaneously be satisfied for arbitrary integers $u$ and $ v $. Answer to this question takes us through a fascinating journey from Brahmagupta all the way to the modern works of Louis Joel Mordell and Ramanujan!

math.HO↗

arXiv2021

Non-volatile reconfigurable spin logic device: parallel operations

A new proposal is given for designing a non-volatile, completely spin logic device, that can be reprogrammed for different functional classical logical operations. We use the concept of bias driven spin dependent circular current and current induced magnetic field in a quantum ring under asymmetric ring-to-electrode interface configuration to implement all the Boolean operations. We extend our idea to build two kinds of parallel computing architectures for getting parallelized operations, all at a particular time. For one case, different kinds of parallel operations are performed in a single device, whereas in the other type all the possible inputs of a logic gate are processed in parallel and all the outputs are read simultaneously. The performance and reliability are investigated in terms of power, delay and power-delay-product and finally the system temperature. We find that both the individual and simultaneous logic operations studied here are much superior compared to the operations performed in different conventional logic families like complementary metal oxide semiconductor logic, transistor-transistor logic, etc. The key advantage is that we can perform several logic operations, as many as we wish, repeating the same or different logic gates using a single setup, which indeed reduces wiring in the circuits and hence consumes much less power. Our analysis can be utilized to design optimized logic circuits at nano-scale level.

cond-mat.mes-hall↗

arXiv2020

Orchards in elliptic curves over finite fields

Consider a set of $ n $ points on a plane. A line containing exactly $ 3 $ out of the $ n $ points is called a $ 3 $-rich line. The classical orchard problem asks for a configuration of the $ n $ points on the plane that maximizes the number of $ 3 $-rich lines. In this note, using the group law in elliptic curves over finite fields, we exhibit several (infinitely many) group models for orchards wherein the number of $ 3 $-rich lines agrees with the expected number given by Green-Tao (or, Burr, Grünbaum and Sloane) formula for the maximum number of lines. We also show, using elliptic curves over finite fields, that there exist infinitely many point-line configurations with the number of $ 3 $-rich lines exceeding the expected number given by Green-Tao formula by two, and this is the only other optimal possibility besides the case when the number of $ 3 $-rich lines agrees with the Green-Tao formula.

math.NT↗

arXiv2020

Pariser-Parr-Pople Model based Configuration-Interaction Study of Linear Optical Absorption in Lower-Symmetry Polycyclic Aromatic Hydrocarbon Molecules

The electronic and optical properties of various polycyclic aromatic hydrocarbons (PAHs) with lower symmetry, namely, benzo[ghi]perylene (C$_{22}$H$_{12}$), benzo[a]coronene (C$_{28}$H$_{14}$), naphtho[2,3a]coronene (C$_{32}$H$_{16}$), anthra[2,3a]coronene (C$_{36}$H$_{18}$), and naphtho[8,1,2-abc]coronene (C$_{30}$H$_{14}$) were investigated. For the purpose, we performed electron-correlated calculations using screened, and standard parameters in the $π$-electron Pariser-Parr-Pople (PPP) Hamiltonian, and the correlation effects were included, both for ground and excited states, using the multi-reference singles-doubles configuration-interaction (MRSDCI) methodology. PPP model Hamiltonian includes long-range Coulomb interactions, which increase the accuracy of our calculations. The results of our calculations predict that, with the increasing sizes of the coronene derivatives, optical spectra are red shifted, and the optical gaps decrease. In each spectrum, the first peak representing the optical gap is of moderate intensity, while the more intense peaks appear at higher energies. Our computed spectra are in good agreement with the available experimental data. For the purpose of comparison, we also performed first-principles time-dependent density-functional theory (TDDFT) calculations of the optical gaps of these molecules using Gaussian basis functions, and found that they yielded values lower than our CI results.

physics.chem-ph↗

arXiv2020

Influence of Edge Functionalization on Electronic and Optical Properties of Armchair Phosphorene Nanoribbons: a First-Principles Study

In this work, we present a systematic first-principles density-functional theory based study of geometry, electronic structure, and optical properties of armchair phosphorene nanoribbons (APNRs), with the aim of understanding the influence of edge passivation. Ribbons of width ranging from 0.33 nm to 3.8 nm were considered, with their edges functionalized with the groups H, OH, F, Cl, S, and Se. The geometries of various APNRs were optimized, and the stability was checked by calculating their formation energies. Using the relaxed geometries, calculations of their band structure and optical properties were performed. Pristine APNRs, as expected, exhibit significant edge reconstruction, rendering them indirect band gap semiconductors, except for one width {\normalsize{}($N=5$, where $N$ is the width parameter)} for which a direct band gap is observed. The edge passivated APNRs are found to be direct band gap semiconductors, with the band gap at the $Γ$-point, for all the functional groups considered in this work. To obtain accurate estimates of band gaps, calculations were also performed using HSE06 hybrid functional for several APNRs. Our calculations reveal that functional groups have significant influence on the band gaps and optical properties of narrower APNRs. For wider passivated ribbons, with the increasing ribbon widths, the gaps converge to almost the same value, irrespective of the group. We also performed calculations including the spin-orbit coupling (SOC) for hydrogen passivated APNRs with $N=5$ and 11. We found that SOC has no significant influence on the band structure of the studied APNRs. However, for the broader APNR, a lowering of peak intensities was observed in the optical absorption spectrum beyond 5 eV.

cond-mat.mes-hall↗

arXiv2020

Pullback of Klingen Eisenstein series and certain critical L-values identities

We obtain pullback formulas for Klingen Eisenstein series with arbitrary levels, with respect to both Siegel congruence and paramodular subgroups, in degree two. Pullback results are used, along with the Fourier series expansion of Klingen Eisenstein series given by Mizumoto, to prove certain identities involving critical values of $ L$-functions attached to normalized elliptic modular forms of weight $ k $ and full level.

math.NT↗

arXiv2020

Signatures of non-trivial band topology in LaAs/LaBi heterostructure

In this article, we investigate non-trivial topological features in a heterostructure of extreme magnetoresistance (XMR) materials LaAs and LaBi using density functional theory (DFT). The proposed heterostructure is found to be dynamically stable and shows bulk band inversion with non-trivial Z_{2} topological invariant and a Dirac cone at the surface. In addition, its electron and hole carrier densities ratio is also calculated to investigate the possibility to possess XMR effect. Electrons and holes in the heterostructure are found to be nearly compensated, thereby facilitating it to be a suitable candidate for XMR studies.

cond-mat.mtrl-sci↗

arXiv2020

Studies of non-trivial band topology and electron-hole compensation in YSb

In this article, we study non-trivial topological phase and electron-hole compensation in extremely large magnetoresistance (XMR) material YSb under hydrostatic pressure using first-principles calculations. YSb is topologically trivial at ambient pressure, but undergoes a reentrant topological phase transition under hydrostatic pressure. The reentrant behavior of topological quantum phase is then studied as a function of charge density ratio under pressure. From the detailed investigation of Fermi surfaces, it is found that electron to hole densities ratio increases with pressure, however a non-trivial topological phase appears without perfect electron-hole compensation. The results indicate that the non-trivial topological phase under hydrostatic pressure may not have maximal influence on the magnetoresistance, and need further investigations through experiments to determine the exact relationship between topology and XMR effect.

cond-mat.mtrl-sci↗

arXiv2020

Tunability of electrical and thermoelectrical properties of monolayer MoS$_2$ through oxygen passivation

Electric and thermoelectric properties of strictly monolayer MoS$_2$ films, which are grown using a novel micro-cavity based CVD growth technique, have been studied under diverse environmental and annealing conditions. Resistance of a thermoelectric device that is fabricated on a continuous monolayer MoS$_2$ layer using photolithography technique has been found to reduce by about six orders of magnitudes upon annealing in vacuum at 525 K. Seebeck coefficient of the layer also reduces by almost an order of magnitude upon annealing. When the sample is exposed to oxygen atmosphere, these parameters return to their previous values. In fact, it has been found that the electron concentration, mobility as well as the thermoelectric power of the material can be tuned by controlling the temperature of annealing and oxygen exposure. Once established, these values are maintained as long as the layer is not exposed to oxygen environment. This can offer a unique way to control doping in the material provided an effective encapsulation method is devised. Such control is an important step forward for device application. The effect has been attributed to the passivation of di-sulfur vacancy donors present in the MoS$_2$ film by physisorbed oxygen molecules. Band structural calculations using density functional theory have been carried out, results of which indeed validate this picture.

cond-mat.mes-hall↗

arXiv2019

Systematic First Principles Configuration-Interaction Calculations of Linear Optical Absorption Spectra in Silicon Hydrides : Si$_2$H$_{2n}$ ($n = 1-3$)

We have performed first principles electron-correlated calculations employing large basis sets to optimize the geometries, and to compute linear optical absorption spectra of various low-lying conformers of silicon hydrides: Si$_{2}$H$_{2n}$, $n=1,2,3$. The geometry optimization for various isomers was carried out at the coupled-cluster singles-doubles-perturbative-triples {[}CCSD(T){]} level of theory, while their excited states and absorption spectra were computed using a large-scale multi-reference singles-doubles configuration-interaction (MRSDCI) approach, which includes electron-correlation effects at a sophisticated level. Our calculated spectra are the first ones for Si$_{2}$H$_{2}$ and Si$_{2}$H$_{4}$ conformers, while for Si$_{2}$H$_{6}$ we obtain excellent agreement with the experimental measurements, suggesting that our computational approach is reliable. Our calculated absorption spectra exhibit a strong structure-property relationship, suggesting the possibility of identifying various conformers based on their optical absorption fingerprints. Furthermore, we have also performed geometry optimization for the selected optically excited states, providing us insights into their character.

physics.atm-clus↗

arXiv2019

A novel quantum grid search algorithm and its application

In this paper we present a novel quantum algorithm, namely the quantum grid search algorithm, to solve a special search problem. Suppose $ k $ non-empty buckets are given, such that each bucket contains some marked and some unmarked items. In one trial an item is selected from each of the $ k $ buckets. If every selected item is a marked item, then the search is considered successful. This search problem can also be formulated as the problem of finding a "marked path" associated with specified bounds on a discrete grid. Our algorithm essentially uses several Grover search operators in parallel to efficiently solve such problems. We also present an extension of our algorithm combined with a binary search algorithm in order to efficiently solve global trajectory optimization problems. Estimates of the expected run times of the algorithms are also presented, and it is proved that our proposed algorithms offer exponential improvement over pure classical search algorithms, while a traditional Grover's search algorithm offers only a quadratic speedup. We note that this gain comes at the cost of increased complexity of the quantum circuitry. The implication of such exponential gains in performance is that many high dimensional optimization problems, which are intractable for classical computers, can be efficiently solved by our proposed quantum grid search algorithm.

quant-ph↗

arXiv2019

First Principles Study of Structural and Optical Properties of B$_{12}$ Isomers

In this work we undertake a comprehensive numerical study of the ground state structures and optical absorption spectra of isomers of B$_{12}$ cluster. Geometry optimization was performed at the coupled-cluster-singles-doubles (CCSD) level of theory, employing cc-pVDZ extended basis sets. Once the geometry of a given isomer was optimized, its ground state energy was calculated more accurately at the coupled-cluster-singles-doubles along with perturbative treatment of triples (CCSD(T)) level of theory, employing larger cc-pVTZ basis sets. Thus, our computed values of binding energies of various isomers are expected to be quite accurate. Our geometry optimization reveals eleven distinct isomers, along with their point group, and electronic ground state symmetries. We also performed vibrational frequency analysis on the three lowest energy isomers, and found them to be stable. Therefore, we computed the linear optical absorption spectra of these isomers of B$_{12}$, employing large-scale multi-reference singles-doubles configuration-interaction (MRSDCI) approach, and found a strong structure-property relationship. This implies that the spectral fingerprints of the geometries can be utilized for optical detection, and characterization, of various isomers of B$_{12}$. We also explored the stability of the isomer with with the structure of a perfect icosahedron, with $I_{h}$ symmetry. In bulk boron icosahedron is the basic structural unit, but, our vibrational frequency analysis reveals that it is unstable in the isolated form. We speculate that this instability could be due to Jahn-Teller distortion because five-fold degenerate HOMO orbitals in $I_{h}$ structure are unfilled.

physics.atm-clus↗

arXiv2019

Excited States and Optical Properties of Hydrogen-Passivated Rectangular Graphenes: A Computational Study

In this paper, we perform large-scale electron-correlated calculations of optoelectronic properties of rectangular graphene-like polycyclic aromatic hydrocarbon molecules. Theoretical methodology employed in this work is based upon Pariser-Parr-Pople (PPP) $π$-electron model Hamiltonian, which includes long-range electron-electron interactions. Electron-correlation effects were incorporated using multi-reference singles-doubles configuration-interaction (MRSDCI) method, and the ground and excited state wave functions thus obtained were employed to calculate the linear optical absorption spectra of these molecules, within the electric-dipole approximation. As far as the ground state wave functions of these molecules are concerned, we find that with the increasing size, they develop a strong diradical open-shell character. Our results on optical absorption spectra are in very good agreement with the available experimental results, outlining the importance of electron-correlation effects in accurate description of the excited states. In addition to the optical gap, spin gap of each molecule was also computed using the same methodology. Calculated spin gaps exhibit a decreasing trend with the increasing sizes of the molecules, suggesting that the infinite graphene has a vanishing spin gap.

cond-mat.mtrl-sci↗